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1. 发明申请

US20050284754A1 Electric field reducing thrust plate 失效
标题翻译：电场减压推力板
公开(公告)号：US20050284754A1
公开(公告)日：2005-12-29
申请号：US10877137
申请日：2004-06-24
申请人： Harald Herchen , Dmitry Lubomirsky , Bo Zheng , Lily Pang
发明人： Harald Herchen , Dmitry Lubomirsky , Bo Zheng , Lily Pang
IPC分类号： C25D7/12 , C25D17/06 , H01L21/288
CPC分类号： C25D7/12 , C25D17/06 , H01L21/2885
摘要： A method and apparatus for an electrochemical processing cell that is configured to minimize bevel and backside deposition. The apparatus includes a contact ring assembly for supporting a substrate, a thrust plate movably positioned to engage a substrate positioned on the contact pins, and a lip seal member positioned to contact the thrust plate and the contact ring to prevent fluid flow therebetween. The lip seal includes a at least one bubble release channel formed therethrough. The method includes positioning an electric field barrier between a backside substrate engaging member and a frontside substrate supporting member to prevent electric field from traveling to the bevel and backside of the substrate. The electric field barrier including at least one bubble release channel formed therethrough.
摘要翻译：一种用于电化学处理电池的方法和装置，其被配置为最小化斜面和背面沉积。该装置包括用于支撑基板的接触环组件，可移动地定位成接合位于接触销上的基板的止动板，以及定位成接触推力板和接触环以防止其间流体流动的唇形密封件。唇形密封件包括通过其形成的至少一个气泡释放通道。该方法包括在背面基板接合构件和前侧基板支撑构件之间定位电场屏障，以防止电场行进到基板的斜面和背面。电场屏障包括至少一个通过其形成的气泡释放通道。

2. 发明申请

US20080168673A1 METHOD AND SYSTEM FOR DETECTION OF WAFER CENTERING IN A TRACK LITHOGRAPHY TOOL 失效
标题翻译：用于检测轨迹扫描工具中的波浪中心的方法和系统
公开(公告)号：US20080168673A1
公开(公告)日：2008-07-17
申请号：US11763352
申请日：2007-06-14
申请人： Harald Herchen , Lily Pang , Erica Porras
发明人： Harald Herchen , Lily Pang , Erica Porras
IPC分类号： G01D21/00
CPC分类号： G01D5/342
摘要： A system for measuring substrate concentricity includes a substrate support member adapted to rotate a substrate around a substantially vertical axis. The substrate includes a mounting surface and a process surface. The system also includes a spin cup positioned below the substrate and a translatable arm mounted a predetermined distance above the process surface of the substrate. The translatable arm is adapted to translate along a radius of the substrate. The system further includes an optical emitter mounted on the translatable arm and an optical detector mounted on the translatable arm.
摘要翻译：用于测量衬底同心度的系统包括适于围绕基本垂直轴线旋转衬底的衬底支撑构件。衬底包括安装表面和工艺表面。该系统还包括位于基底下方的旋转杯，以及安装在衬底的工艺表面上方预定距离的可平移臂。可平移臂适于沿着基底的半径平移。该系统还包括安装在可平移臂上的光发射器和安装在可平移臂上的光学探测器。

3. 发明授权

US07497026B2 Method and system for detection of wafer centering in a track lithography tool 失效
标题翻译：用于在轨道光刻工具中检测晶圆定心的方法和系统
公开(公告)号：US07497026B2
公开(公告)日：2009-03-03
申请号：US11763352
申请日：2007-06-14
申请人： Harald Herchen , Lily Pang , Erica Porras
发明人： Harald Herchen , Lily Pang , Erica Porras
IPC分类号： H01L21/00 , G01B9/00
CPC分类号： G01D5/342
摘要： A system for measuring substrate concentricity includes a substrate support member adapted to rotate a substrate around a substantially vertical axis. The substrate includes a mounting surface and a process surface. The system also includes a spin cup positioned below the substrate and a translatable arm mounted a predetermined distance above the process surface of the substrate. The translatable arm is adapted to translate along a radius of the substrate. The system further includes an optical emitter mounted on the translatable arm and an optical detector mounted on the translatable arm.
摘要翻译：用于测量衬底同心度的系统包括适于围绕基本垂直轴线旋转衬底的衬底支撑构件。衬底包括安装表面和工艺表面。该系统还包括位于基底下方的旋转杯，以及安装在衬底的工艺表面上方预定距离的可平移臂。可平移臂适于沿着基底的半径平移。该系统还包括安装在可平移臂上的光发射器和安装在可平移臂上的光学探测器。

4. 发明申请

US20060102467A1 Current collimation for thin seed and direct plating 审中-公开
标题翻译：目前准种子为薄种子和直接电镀
公开(公告)号：US20060102467A1
公开(公告)日：2006-05-18
申请号：US10988646
申请日：2004-11-15
申请人： Harald Herchen , John Dukovic , Lily Pang
发明人： Harald Herchen , John Dukovic , Lily Pang
IPC分类号： C25C3/16 , C25B9/00 , C25D17/00
CPC分类号： C25D17/008 , C25D7/123 , C25D17/001 , C25D17/007
摘要： A method and apparatus for plating a conductive material onto a substrate is provided. The apparatus includes a fluid processing cell having a fluid basin configured to contain an electrolyte solution and having an opening configured to receive a substrate for processing, an anode assembly positioned in the fluid basin, and a collimator positioned in the fluid basin between the anode assembly and the opening.
摘要翻译：提供了一种用于将导电材料电镀到基底上的方法和装置。该装置包括流体处理池，流体池被配置为容纳电解质溶液，并且具有构造成接收用于处理的基板的开口，定位在流体池中的阳极组件和位于阳极组件之间的流体池中的准直器和开幕。

5. 发明授权

US08568529B2 HVPE chamber hardware 有权
标题翻译： HVPE室硬件
公开(公告)号：US08568529B2
公开(公告)日：2013-10-29
申请号：US12637019
申请日：2009-12-14
申请人： Tetsuya Ishikawa , David H. Quach , Anzhong Chang , Olga Kryliouk , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
发明人： Tetsuya Ishikawa , David H. Quach , Anzhong Chang , Olga Kryliouk , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
IPC分类号： C30B21/02
CPC分类号： C30B29/403 , C23C16/34 , C23C16/4401 , C23C16/45565 , C23C16/46 , C30B25/02 , C30B29/406 , Y10T137/479 , Y10T137/4807 , Y10T137/4824 , Y10T137/7504 , Y10T137/8376
摘要： Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.
摘要翻译：本文公开的实施例通常涉及HVPE室。腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。不同的温度导致气体混合在一起，反应并沉积在基板上，而在室壁上很少或没有沉积。

6. 发明授权

US08491720B2 HVPE precursor source hardware 有权
标题翻译： HVPE前驱源硬件
公开(公告)号：US08491720B2
公开(公告)日：2013-07-23
申请号：US12637028
申请日：2009-12-14
申请人： Tetsuya Ishikawa , David H. Quach , Anzhong Chang , Olga Kryliouk , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
发明人： Tetsuya Ishikawa , David H. Quach , Anzhong Chang , Olga Kryliouk , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C22/02
CPC分类号： C30B29/403 , C23C16/34 , C23C16/4401 , C23C16/45565 , C23C16/46 , C30B25/02 , C30B29/406 , Y10T137/479 , Y10T137/4807 , Y10T137/4824 , Y10T137/7504 , Y10T137/8376
摘要： Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.
摘要翻译：本文公开的实施例通常涉及HVPE室。腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。不同的温度导致气体混合在一起，反应并沉积在基板上，在室壁上很少或没有沉积。

7. 发明申请

US20100261340A1 CLUSTER TOOL FOR LEDS 有权
标题翻译： LED集群工具
公开(公告)号：US20100261340A1
公开(公告)日：2010-10-14
申请号：US12751692
申请日：2010-03-31
申请人： SANDEEP NIJHAWAN , Brian H. Burrows , Tetsuya Ishikawa , Olga Kryliouk , Anand Vasudev , Jie Su , David H. Quach , Anzhong Chang , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
发明人： SANDEEP NIJHAWAN , Brian H. Burrows , Tetsuya Ishikawa , Olga Kryliouk , Anand Vasudev , Jie Su , David H. Quach , Anzhong Chang , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
IPC分类号： H01L21/205
CPC分类号： H01L21/67109 , C30B25/02 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/67115 , H01L21/67167 , H01L21/67207 , H01L33/007
摘要： The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.
摘要翻译：本发明总体上提供了用于形成LED结构的装置和方法。本发明的一个实施方案提供了一种用于制造氮化物复合结构的方法，其包括通过氢化物气相外延（HVPE）工艺或金属有机物在第一处理室中在衬底上形成包含第一III族元素的氮和氮化学气相沉积（MOCVD）工艺，通过MOCVD工艺在第二处理室中在第一层上形成包含第二组III元素的第二层和氮，并且形成包含第三族III族元素和氮的第三层第二层通过MOCVD过程。

8. 发明授权

US06486081B1 Gas distribution system for a CVD processing chamber 有权
标题翻译：用于CVD处理室的气体分配系统
公开(公告)号：US06486081B1
公开(公告)日：2002-11-26
申请号：US09449203
申请日：1999-11-24
申请人： Tetsuya Ishikawa , Padmanabhan Krishnaraj , Feng Gao , Alan W. Collins , Lily Pang
发明人： Tetsuya Ishikawa , Padmanabhan Krishnaraj , Feng Gao , Alan W. Collins , Lily Pang
IPC分类号： H01L2131
CPC分类号： C23C16/45514 , C23C16/401 , C23C16/4411 , C23C16/455 , C23C16/45563 , C23C16/45578 , C23C16/507 , H01J37/3244 , H01L21/67069
摘要： The present invention provides an apparatus for depositing a film on a substrate comprising a processing chamber, a substrate support member disposed within the chamber, a first gas inlet, a second gas inlet, a plasma generator and a gas exhaust. The first gas inlet provides a first gas at a first distance from an interior surface of the chamber, and the second gas inlet provides a second gas at a second distance that is closer than the first distance from the interior surface of the chamber. Thus, the second gas creates a higher partial pressure adjacent the interior surface of the chamber to significantly reduce deposition from the first gas onto the interior surface. The present invention also provides a method for depositing a FSG film on a substrate comprising: introducing first gas through a first gas inlet at a first distance from an interior surface of the chamber, and introducing a second gas through a second gas inlet at a second distance from the interior surface of the chamber, wherein the second gas creates a higher partial pressure adjacent the interior surface of the chamber to prevent deposition from the first gas on the interior surface. Alternatively, the first gas is introduced at a different angle from the second gas with respect to a substrate surface.
摘要翻译：本发明提供一种用于在基板上沉积膜的装置，包括处理室，设置在室内的基板支撑件，第一气体入口，第二气体入口，等离子体发生器和排气。第一气体入口从腔室的内表面提供第一距离的第一气体，并且第二气体入口提供第二距离离第二距离距离腔室内表面的第一距离。因此，第二气体在室的内表面附近产生较高的分压，以显着地减少从第一气体到内表面的沉积。本发明还提供了一种用于在衬底上沉积FSG膜的方法，包括：将第一气体通过第一距离腔室的内表面的第一气体入口引入，并将第二气体通过第二气体入口引入第二气体距离室的内表面的距离，其中第二气体在室的内表面附近产生较高的分压，以防止内表面上的第一气体沉积。或者，第一气体相对于衬底表面以与第二气体不同的角度被引入。

9. 外观设计

USD664172S1 Dome assembly for a deposition chamber 有权
标题翻译：用于沉积室的圆顶组件
公开(公告)号：USD664172S1
公开(公告)日：2012-07-24
申请号：US29350406
申请日：2009-11-16
申请人： Tetsuya Ishikawa , David H. Quach , Anzhong Chang , Olga Kryliouk , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
设计人： Tetsuya Ishikawa , David H. Quach , Anzhong Chang , Olga Kryliouk , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang

10. 发明授权

US08183132B2 Methods for fabricating group III nitride structures with a cluster tool 有权
标题翻译：使用簇工具制备III族氮化物结构的方法
公开(公告)号：US08183132B2
公开(公告)日：2012-05-22
申请号：US12751692
申请日：2010-03-31
申请人： Sandeep Nijhawan , Brian H. Burrows , Tetsuya Ishikawa , Olga Kryliouk , Anand Vasudev , Jie Su , David H. Quach , Anzhong Chang , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
发明人： Sandeep Nijhawan , Brian H. Burrows , Tetsuya Ishikawa , Olga Kryliouk , Anand Vasudev , Jie Su , David H. Quach , Anzhong Chang , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
IPC分类号： H01L21/20 , H01L21/00
CPC分类号： H01L21/67109 , C30B25/02 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/67115 , H01L21/67167 , H01L21/67207 , H01L33/007
摘要： The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.
摘要翻译：本发明总体上提供了用于形成LED结构的装置和方法。本发明的一个实施方案提供了一种用于制造氮化物复合结构的方法，其包括通过氢化物气相外延（HVPE）工艺或金属有机物在第一处理室中在衬底上形成包含第一III族元素的氮和氮化学气相沉积（MOCVD）工艺，通过MOCVD工艺在第二处理室中在第一层上形成包含第二组III元素的第二层和氮，并且形成包含第三族III族元素和氮的第三层第二层通过MOCVD过程。

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