专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070072433A1 Apparatus for the removal of a fluorinated polymer from a substrate and methods therefor 有权
标题翻译：用于从基材除去氟化聚合物的设备及其方法
公开(公告)号：US20070072433A1
公开(公告)日：2007-03-29
申请号：US11237477
申请日：2005-09-27
申请人： Hyungsuk Yoon , John Boyd , Andras Kuthi
发明人： Hyungsuk Yoon , John Boyd , Andras Kuthi
IPC分类号： H01L21/302 , G03C1/00 , H01L21/461
CPC分类号： H01L21/02087 , B08B7/0035
摘要： An apparatus generating a plasma for removing fluorinated polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the fluorinated polymer.
摘要翻译：公开了一种从衬底生成用于除去氟化聚合物的等离子体的装置。该实施例包括动力电极组件，其包括供电电极，第一介电层和设置在电源电极和第一介电层之间的第一丝网。该实施例还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔，当等离子体存在于空腔中时，第一金属丝网被第一介电层与等离子体屏蔽，空腔在一端具有出口，用于提供等离子体以除去氟化聚合物。

2. 发明申请

US20100181025A1 APPARATUS FOR THE REMOVAL OF A FLUORINATED POLYMER FROM A SUBSTRATE 有权
标题翻译：从基板上去除氟化聚合物的装置
公开(公告)号：US20100181025A1
公开(公告)日：2010-07-22
申请号：US12750612
申请日：2010-03-30
申请人： Hyungsuk Alexander Yoon , John Boyd , Andras Kuthi , Andrew D. Bailey, III
发明人： Hyungsuk Alexander Yoon , John Boyd , Andras Kuthi , Andrew D. Bailey, III
IPC分类号： C23F1/08
CPC分类号： H01L21/02087 , B08B7/0035
摘要： An apparatus generating a plasma for removing fluorinated polymer from a substrate is provided. The apparatus includes a powered electrode assembly, which includes a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The apparatus also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated. The first wire mesh is shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the fluorinated polymer.
摘要翻译：提供一种从衬底生成用于除去氟化聚合物的等离子体的装置。所述装置包括电源电极组件，其包括供电电极，第一电介质层和布置在所述电源电极和所述第一电介质层之间的第一电线网。该装置还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔。当空腔中存在等离子体时，第一电介质层通过第一电介质层屏蔽第一丝网，其在一端具有出口以提供等离子体以除去氟化聚合物。

3. 发明授权

US07909934B2 Megasonic cleaning efficiency using auto-tuning of a RF generator at constant maximum efficiency 有权
标题翻译：超声波清洗效率使用自动调谐的RF发生器以最大的效率保持恒定
公开(公告)号：US07909934B2
公开(公告)日：2011-03-22
申请号：US11217523
申请日：2005-08-31
申请人： John Boyd , Andras Kuthi , Michael G. R. Smith , Thomas W. Anderson , William Thie
发明人： John Boyd , Andras Kuthi , Michael G. R. Smith , Thomas W. Anderson , William Thie
IPC分类号： B08B7/00 , B08B7/04
CPC分类号： H01L21/67253 , B06B1/0253 , B06B2201/71 , B08B3/10 , B08B3/12 , H01L21/67057 , Y10S134/902
摘要： A system and method of cleaning a substrate includes a megasonic chamber that includes a transducer and a substrate. The transducer is being oriented toward the substrate. A variable distance d separates the transducer and the substrate. The system also includes a dynamically adjustable RF generator that has an output coupled to the transducer.
摘要翻译：清洁衬底的系统和方法包括包括换能器和衬底的兆声波室。换能器朝向基板。可变距离d分离换能器和基板。该系统还包括具有耦合到换能器的输出的动态可调的RF发生器。

4. 发明授权

US06995067B2 Megasonic cleaning efficiency using auto-tuning of an RF generator at constant maximum efficiency 失效
标题翻译：超声波清洗效率使用自动调谐的RF发生器以恒定的最大效率
公开(公告)号：US06995067B2
公开(公告)日：2006-02-07
申请号：US10360322
申请日：2003-02-06
申请人： John Boyd , Andras Kuthi , Michael G. R. Smith , Thomas W. Anderson , William Thie
发明人： John Boyd , Andras Kuthi , Michael G. R. Smith , Thomas W. Anderson , William Thie
IPC分类号： H01L21/336 , H01L21/42 , G01R31/26
CPC分类号： H01L21/67253 , B06B1/0253 , B06B2201/71 , B08B3/10 , B08B3/12 , H01L21/67057 , Y10S134/902
摘要： A system and method of cleaning a substrate includes a megasonic chamber that includes a transducer and a substrate. The transducer is being oriented toward the substrate. A variable distance d separates the transducer and the substrate. The system also includes a dynamically adjustable RF generator that has an output coupled to the transducer.
摘要翻译：清洁衬底的系统和方法包括包括换能器和衬底的兆声波室。换能器朝向基板。可变距离d分离换能器和基板。该系统还包括具有耦合到换能器的输出的动态可调的RF发生器。

5. 发明授权

US07691278B2 Apparatus for the removal of a fluorinated polymer from a substrate and methods therefor 有权
标题翻译：用于从基材除去氟化聚合物的设备及其方法
公开(公告)号：US07691278B2
公开(公告)日：2010-04-06
申请号：US11237477
申请日：2005-09-27
申请人： Hyungsuk Alexander Yoon , John Boyd , Andras Kuthi , Andrew D. Bailey, III
发明人： Hyungsuk Alexander Yoon , John Boyd , Andras Kuthi , Andrew D. Bailey, III
IPC分类号： H01L21/302
CPC分类号： H01L21/02087 , B08B7/0035
摘要： An apparatus generating a plasma for removing fluorinated polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the fluorinated polymer.
摘要翻译：公开了一种从衬底生成用于除去氟化聚合物的等离子体的装置。该实施例包括动力电极组件，其包括供电电极，第一介电层和设置在电源电极和第一介电层之间的第一丝网。该实施例还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔，当等离子体存在于空腔中时，第一金属丝网被第一介电层与等离子体屏蔽，空腔在一端具有出口，用于提供等离子体以除去氟化聚合物。

6. 发明申请

US20060000487A1 Megasonic cleaning efficiency using auto-tuning of a RF generator at constant maximum efficiency 有权
标题翻译：超声波清洗效率使用自动调谐的RF发生器以最大的效率保持恒定
公开(公告)号：US20060000487A1
公开(公告)日：2006-01-05
申请号：US11217523
申请日：2005-08-31
申请人： John Boyd , Andras Kuthi , Michael Smith , Thomas Anderson , William Thie
发明人： John Boyd , Andras Kuthi , Michael Smith , Thomas Anderson , William Thie
IPC分类号： B08B3/12
CPC分类号： H01L21/67253 , B06B1/0253 , B06B2201/71 , B08B3/10 , B08B3/12 , H01L21/67057 , Y10S134/902
摘要： A system and method of cleaning a substrate includes a megasonic chamber that includes a transducer and a substrate. The transducer is being oriented toward the substrate. A variable distance d separates the transducer and the substrate. The system also includes a dynamically adjustable RF generator that has an output coupled to the transducer.
摘要翻译：清洁衬底的系统和方法包括包括换能器和衬底的兆声波室。换能器朝向基板。可变距离d分离换能器和基板。该系统还包括具有耦合到换能器的输出的动态可调的RF发生器。

7. 发明授权

US08926789B2 Apparatus for the removal of a fluorinated polymer from a substrate 有权
标题翻译：用于从基材除去氟化聚合物的装置
公开(公告)号：US08926789B2
公开(公告)日：2015-01-06
申请号：US12750612
申请日：2010-03-30
申请人： Hyungsuk Alexander Yoon , John Boyd , Andras Kuthi , Andrew D. Bailey, III
发明人： Hyungsuk Alexander Yoon , John Boyd , Andras Kuthi , Andrew D. Bailey, III
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00 , H01L21/02 , B08B7/00
CPC分类号： H01L21/02087 , B08B7/0035
摘要： An apparatus generating a plasma for removing fluorinated polymer from a substrate is provided. The apparatus includes a powered electrode assembly, which includes a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The apparatus also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated. The first wire mesh is shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the fluorinated polymer.
摘要翻译：提供一种从衬底生成用于除去氟化聚合物的等离子体的装置。所述装置包括电源电极组件，其包括供电电极，第一电介质层和布置在所述电源电极和所述第一电介质层之间的第一电线网。该装置还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔。当空腔中存在等离子体时，第一电介质层通过第一电介质层屏蔽第一丝网，其在一端具有出口以提供等离子体以除去氟化聚合物。

8. 发明申请

US20130050892A1 MEASURING AND CONTROLLING WAFER POTENTIAL IN PULSED RF BIAS PROCESSING 审中-公开
标题翻译：测量和控制脉冲RF偏置加工中的波动潜能
公开(公告)号：US20130050892A1
公开(公告)日：2013-02-28
申请号：US13663393
申请日：2012-10-29
申请人： Andras Kuthi , Stephen Hwang , James C. Vetter , Greg Eilenstine , Rongping Wang , Tuan Ngo
发明人： Andras Kuthi , Stephen Hwang , James C. Vetter , Greg Eilenstine , Rongping Wang , Tuan Ngo
IPC分类号： H01L21/683
CPC分类号： H01J37/32935 , H01J37/321 , H01J37/32174 , H01L22/26
摘要： Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.
摘要翻译：提供了用于监测施加到处理室中的卡盘的脉冲RF偏置信号的装置和方法。一种方法包括用于检测脉冲RF偏置电压的各个脉冲的电压值的操作，以及用于确定对每个检测到的脉冲的值进行采样的时间。在每个脉冲的采样时间，对各个检测到的脉冲的特定电压值进行采样，并且保持特定的电压值。每个特定电压值表示每个单独检测到的脉冲的特征峰 - 峰电压值。产生表示各个检测脉冲之一的电压包络的特征峰 - 峰值电压值的反馈信号，并且根据反馈之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压信号和脉冲RF偏置电压信号的期望电压值。

9. 发明授权

US08252140B2 Plasma chamber for wafer bevel edge processing 有权
标题翻译：等离子室用于晶圆斜面加工
公开(公告)号：US08252140B2
公开(公告)日：2012-08-28
申请号：US13084849
申请日：2011-04-12
申请人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi
发明人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/02087 , B08B7/0035 , H01J37/32091 , H01J37/32174 , H01J37/32541 , H01L21/67069
摘要： The embodiments provide structures and mechanisms for removal of etch byproducts, dielectric films and metal films on and near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In one example, a chamber for wafer bevel edge cleaning is provided. The chamber includes a bottom electrode having a bottom electrode surface for supporting the wafer when present. Also included is a top edge electrode surrounding an insulating plate. The insulator plate is opposing the bottom electrode. The top edge electrode is electrically grounded and has a down-facing L shape. Further included in the chamber is a bottom edge electrode that is electrically grounded and spaced apart from the bottom electrode. The bottom edge electrode is disposed to encircle the bottom electrode. The bottom edge electrode is oriented to oppose the down-facing L shape of the top edge electrode.
摘要翻译：这些实施例提供用于去除基板斜边缘上和附近的蚀刻副产物，电介质膜和金属膜的结构和机构，以及室内，以避免聚合物副产物和沉积膜的积聚并提高工艺产率。在一个示例中，提供了用于晶片斜面边缘清洁的室。该室包括底部电极，其具有用于在存在时支撑晶片的底部电极表面。还包括围绕绝缘板的顶边电极。绝缘板与底部电极相对。顶边电极电接地并具有向下的L形状。还包括在腔室中的底边电极是电接地的并且与底部电极间隔开。下边缘电极被设置成环绕底部电极。底部边缘电极被定向成与顶部边缘电极的向下的L形相对。

10. 发明授权

US08192576B2 Methods of and apparatus for measuring and controlling wafer potential in pulsed RF bias processing 有权
标题翻译：用于测量和控制脉冲RF偏置处理中的晶片电位的方法和装置
公开(公告)号：US08192576B2
公开(公告)日：2012-06-05
申请号：US11805607
申请日：2007-05-23
申请人： Andras Kuthi , Stephen Hwang , James C. Vetter , Greg Eilenstine , Rongping Wang , Tuan Ngo
发明人： Andras Kuthi , Stephen Hwang , James C. Vetter , Greg Eilenstine , Rongping Wang , Tuan Ngo
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： H01J37/32935 , H01J37/321 , H01J37/32174 , H01L22/26
摘要： Apparatus and methods are provided to detect and control a voltage potential applied in a plasma chamber for processing a semiconductor wafer. The plasma chamber includes circuitry for monitoring and adjusting a pulsed RF bias voltage signal to be applied to a chuck in the plasma chamber, where the chuck is configured to mount the wafer for processing. The circuitry includes an RF bias voltage detector for detecting individual pulses of the pulsed RF bias voltage signal applied to the chuck. A timing circuit is provided for determining a time for sampling each of the individual detected pulses and a sample and hold circuit. The sample and hold circuit is triggered at the sampling time for sampling each of the individual detected pulses to determine and hold a voltage value representing a peak peak-to-peak voltage value of each individual detected pulse, and the sample and hold circuit is configured to provide a feedback signal representing the peak peak-to-peak voltage value of at least one of the detected pulses. Further included is a feedback circuit for adjusting the voltage of the pulsed RF bias voltage signal applied to the chuck according to a difference between the feedback signal and a desired voltage value of the RF bias voltage signal.
摘要翻译：提供了用于检测和控制施加在等离子体室中用于处理半导体晶片的电压电势的装置和方法。等离子体室包括用于监测和调整要施加到等离子体室中的卡盘的脉冲RF偏置电压信号的电路，其中卡盘被配置为安装用于处理的晶片。电路包括用于检测施加到卡盘的脉冲RF偏置电压信号的各个脉冲的RF偏置电压检测器。提供了一种定时电路，用于确定对各个检测到的脉冲进行采样的时间和采样和保持电路。采样和保持电路在采样时间被触发，以对各个检测到的脉冲进行采样，以确定和保持表示每个单独检测到的脉冲的峰值峰峰值电压值的电压值，并且采样和保持电路被配置以提供代表检测到的脉冲中至少一个的峰值峰 - 峰电压值的反馈信号。还包括反馈电路，用于根据反馈信号和RF偏置电压信号的期望电压值之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式