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1. 发明授权

US06402979B1 Magnetic ferrite material and manufacture method thereof 失效
标题翻译：磁性铁氧体材料及其制造方法
公开(公告)号：US06402979B1
公开(公告)日：2002-06-11
申请号：US09628280
申请日：2000-07-28
申请人： Hitoshi Saita , Tomofumi Kuroda , Naoyoshi Sato
发明人： Hitoshi Saita , Tomofumi Kuroda , Naoyoshi Sato
IPC分类号： C04B3526
CPC分类号： H01F1/344 , C04B35/2658
摘要： There is disclosed a magnetic ferrite material obtained by calcining a raw material, forming a calcined powder into a desired shape and sintering to contain Fe2O3, MnO and ZnO as main components, the magnetic ferrite material with a low power loss is realized by setting the coefficient of variation (CV value) of the content of a Ca component precipitated along a grain boundary in a range of 1 to 60%, and the magnetic ferrite material is manufactured by calcining the raw material containing Fe2O3, MnO and ZnO as the main components to obtain the calcined powder in which that the S component content is in a range of 1 to 200 ppm, and forming the calcined powder into the desired shape and sintering.
摘要翻译：公开了通过煅烧原料获得的磁性铁氧体材料，将煅烧粉末形成所需形状并烧结以含有Fe 2 O 3，MnO和ZnO作为主要成分，通过设定系数来实现低功率损耗的磁性铁氧体材料通过沿着晶界析出的Ca成分含量在1〜60％范围内的变化量（CV值），通过将含有Fe 2 O 3，MnO和ZnO的原料作为主要成分进行煅烧来制造磁性铁氧体材料，得到S成分含量为1〜200ppm的煅烧粉末，将煅烧粉末形成所需形状并进行烧结。

2. 发明授权

US6077453A Ferrite, and transformer and method for driving it 有权
标题翻译：铁氧体，变压器及其驱动方法
公开(公告)号：US6077453A
公开(公告)日：2000-06-20
申请号：US231763
申请日：1999-01-15
申请人： Hitoshi Saita , Tomofumi Kuroda , Shigeo Okamoto , Naoyoshi Sato
发明人： Hitoshi Saita , Tomofumi Kuroda , Shigeo Okamoto , Naoyoshi Sato
IPC分类号： C01G49/00 , C04B35/26 , C04B35/38 , H01F1/34 , H01F27/255 , C04D35/26
CPC分类号： C04B35/2658 , H01F1/344 , H01F27/255 , C04B2235/3232 , C04B2235/3244 , C04B2235/3251 , C04B2235/3262 , C04B2235/3275 , C04B2235/3277 , C04B2235/3284 , C04B2235/3293 , C04B2235/3418 , C04B2235/604
摘要： Provided are an Mn--Zn ferrite in which the core loss is low and Bs is high at high temperatures; a transformer capable of being small-sized and suitable to use at high temperatures; and a method for efficiently driving the transformer. Also provided is a transformer capable of being small-sized and suitable to use in a broad temperature range including high temperatures. Further provided are a high-efficiency transformer capable of being small-sized, in which the core loss in the ferrite core is low and the saturation magnetic flux density is high therein at the temperature at which the transformer is driven; and a high-efficiency driving method for the transformer. Depending on its use, Mn--Zn ferrite to be the ferrite core for the transformers comprises, as the essential components, specific amounts of Fe.sub.2 O.sub.3, ZnO and MnO, and, as the side components, specific amounts of SiO.sub.2, CaCO.sub.3, Nb.sub.2 O.sub.5 and ZrO.sub.2. The core of the transformers is made of the Mn--Zn ferrite.
摘要翻译：提供一种其中铁损低低并且Bs在高温下高的Mn-Zn铁氧体; 能够小型化并适用于高温使用的变压器; 以及有效地驱动变压器的方法。还提供了能够小型化并且适合在包括高温的宽温度范围内使用的变压器。还提供了一种能够在变压器驱动的温度下铁氧体磁芯的磁芯损耗低和饱和磁通密度高的小型高效变压器，和变压器的高效率驱动方法。根据其用途，用作变压器的铁氧体磁心的Mn-Zn铁氧体作为必要成分，含有Fe 2 O 3，ZnO，MnO的特定量，作为侧面成分，可以使用特定量的SiO 2，CaCO 3，Nb 2 O 5，ZrO 2 。变压器的核心由Mn-Zn铁氧体制成。

3. 发明授权

US6033594A Ferrite and inductor 失效
标题翻译：铁氧体和电感
公开(公告)号：US6033594A
公开(公告)日：2000-03-07
申请号：US112055
申请日：1998-07-09
申请人： Yasushi Enokido , Ryo Yokoyama , Hitoshi Saita , Naoyoshi Sato
发明人： Yasushi Enokido , Ryo Yokoyama , Hitoshi Saita , Naoyoshi Sato
IPC分类号： C04B35/26 , H01F1/34 , H01F17/04
CPC分类号： H01F1/344 , C04B35/265 , C04B35/2666
摘要： A ferrite which has a high initial permeability, excellent anti-stress properties and excellent temperature characteristic, obviates the use of lead, and is inexpensive, the ferrite being capable of materialize the narrow tolerance and high reliability of a resin mold type inductor without causing environmental pollution, the ferrite having a main component containing at least iron oxide and nickel oxide, an additive containing at least one of bismuth oxide, vanadium oxide, phosphorus oxide and boron oxide, a first auxiliary component containing silicon oxide and a second auxiliary component containing at least one of magnesium oxide, calcium oxide, barium oxide and strontium oxide, the content of the additive being 0.5 to 15 wt % based on the main component, the content of each auxiliary component being 0.1 to 10.0 wt % based on the main component, and a resin mold type inductor for which the above ferrite is applied.
摘要翻译：具有高初始磁导率，优异的抗应力性能和优异的温度特性的铁素体避免了铅的使用，并且成本低廉，铁氧体能够实现树脂模型型电感器的窄公差和高可靠性而不引起环境污染，具有至少含有氧化铁和氧化镍的主成分的铁素体，含有氧化铋，氧化钒，氧化磷和氧化硼中的至少一种的添加剂，含有氧化硅的第一辅助成分和含有氧化硅的第二辅助成分氧化镁，氧化钙，氧化钡和氧化锶中的至少一种，添加剂的含量相对于主成分为0.5〜15重量％，各辅助成分的含量相对于主成分为0.1〜10.0重量％以及应用上述铁氧体的树脂模型型电感器。

4. 发明申请

US20100246092A1 THIN-FILM DEVICE 有权
标题翻译：薄膜器件
公开(公告)号：US20100246092A1
公开(公告)日：2010-09-30
申请号：US12727549
申请日：2010-03-19
申请人： Akira SHIBUE , Yoshihiko Yano , Hitoshi Saita , Kenji Horino
发明人： Akira SHIBUE , Yoshihiko Yano , Hitoshi Saita , Kenji Horino
IPC分类号： H01G4/06
CPC分类号： H01G4/33 , H01G4/232 , H01G4/30 , H01L28/40
摘要： A thin-film device comprises a base electrode made of a metal, a first dielectric layer, a first inner electrode, a second dielectric layer, a second inner electrode, and a third dielectric layer. Letting T1 be the thickness of the lowermost first dielectric layer in contact with the base electrode in the plurality of dielectric layers, and Tmin be the thickness of the thinnest dielectric layer in the plurality of dielectric layers excluding the first dielectric layer, T1>Tmin. Making the first dielectric layer thicker than the thinnest, dielectric layer in the other dielectric layers can increase the distance between a metal part projecting from a metal surface because of the surface roughness of the base electrode and the inner electrode mounted on the lowermost dielectric layer, thereby reducing leakage currents.
摘要翻译：薄膜器件包括由金属制成的基极，第一介电层，第一内部电极，第二电介质层，第二内部电极和第三电介质层。设T1为与多个电介质层中的基极接触的最低的第一电介质层的厚度，Tmin为除了第一电介质层之外的多个电介质层中最薄的电介质层的厚度，T1> Tmin。由于基极的表面粗糙度和安装在最下层电介质层上的内电极的表面粗糙度，使得第一电介质层比其他电介质层中最薄的电介质层的电介质层增加了从金属表面突出的金属部分之间的距离，从而减少漏电流。

5. 发明申请

US20070049026A1 Dielectric film and process for its fabrication 有权
标题翻译：电介质膜及其制造工艺
公开(公告)号：US20070049026A1
公开(公告)日：2007-03-01
申请号：US11508923
申请日：2006-08-24
申请人： Yuki Miyamoto , Hitoshi Saita
发明人： Yuki Miyamoto , Hitoshi Saita
IPC分类号： H01L21/44 , H01L21/31
CPC分类号： H01L21/02263 , C23C18/1216 , C23C18/1241 , C23C18/125 , C23C18/1283 , H01L21/31691
摘要： A dielectric film production process comprising a baking step in which a dielectric film is formed by heating a precursor layer formed on a metal layer, wherein the metal layer contains at least one type of metal selected from the group consisting of Cu, Ni, Al, stainless steel and inconel, and during at least part of the baking step the precursor layer is heated in a reduced pressure atmosphere.
摘要翻译：一种电介质膜制造方法，其特征在于，包括：烧成工序，其中通过加热形成在金属层上的前体层形成电介质膜，其中所述金属层含有选自Cu，Ni，Al，不锈钢和铬镍铁合金，并且在至少部分烘烤步骤期间，将前体层在减压气氛中加热。

6. 发明申请

US20060072282A1 Dielectric thin film, thin film capacitor element, and method for manufacturing thin film capacitor element 审中-公开
标题翻译：介电薄膜，薄膜电容器元件以及薄膜电容器元件的制造方法
公开(公告)号：US20060072282A1
公开(公告)日：2006-04-06
申请号：US11235051
申请日：2005-09-27
申请人： Kiyoshi Uchida , Kenji Horino , Hitoshi Saita
发明人： Kiyoshi Uchida , Kenji Horino , Hitoshi Saita
IPC分类号： H01G4/20
CPC分类号： H01L21/02197 , H01G4/1227 , H01G4/33 , H01L21/02266 , H01L21/31691 , H01L27/016 , H01L28/55 , H01L28/65
摘要： The present invention provides a dielectric thin film whose composition is expressed by the formula (Ba1-xSrx)yTiO3 (0.18≦x≦0.45, 0.96≦y≦1.04), and whose peak intensity ratio I(100)I(110) is from 0.02 to 2.0 when I(100) is the peak intensity of the diffraction line of the (100) plane, and I(110) is the peak intensity of the diffraction line of the (110) plane in an X-ray diffraction chart of the dielectric thin film.
摘要翻译：本发明提供了一种电介质薄膜，其组成由式（Ba x 1-x x Sr x）y TiO 2 3 （100≤I≤1.0），并且当I（100）为峰强度时，峰强度比I（100）I（110）为0.02〜2.0，（100）面的衍射线和I（110）是电介质薄膜的X射线衍射图中的（110）面的衍射线的峰值强度。

7. 发明申请

US20090176345A1 Process for producing thin-film capacitor 有权
标题翻译：制造薄膜电容器的工艺
公开(公告)号：US20090176345A1
公开(公告)日：2009-07-09
申请号：US11989600
申请日：2006-07-28
申请人： Hitoshi Saita , Kiyoshi Uchida , Kenji Horino , Eri Aizawa
发明人： Hitoshi Saita , Kiyoshi Uchida , Kenji Horino , Eri Aizawa
IPC分类号： H01L21/02
CPC分类号： H01G4/1227 , C23C18/1216 , C23C18/1279 , H01G4/33 , H01L21/02197 , H01L21/02282 , H01L21/31691 , H01L27/016 , H01L28/55
摘要： It is an object of the invention to provide a process for production of a thin-film capacitor that can simultaneously achieve improved capacity density and reduced leakage current density for barium strontium titanate thin-films. There is provided a process for production of thin-film capacitors that includes a metal oxide thin-film forming step in which an organic dielectric starting material is fired to form a barium strontium titanate thin-film, wherein the firing atmosphere used is an oxygen-containing inert gas atmosphere, and the barium strontium titanate thin-film formed by the process has a larger capacity density than the capacity density of the barium strontium titanate thin-film fired in an oxygen atmosphere.
摘要翻译：本发明的目的是提供一种可以同时实现钛酸锶钡薄膜的容量密度提高和漏电流密度降低的薄膜电容器的制造方法。提供一种制造薄膜电容器的方法，其包括金属氧化物薄膜形成步骤，其中将有机介电起始材料烧制以形成钛酸钡锶钡薄膜，其中所用的烧成气氛为氧 - 并且通过该方法形成的钛酸钡锶薄膜的电容密度比在氧气氛中烧制的钛酸钡锶薄膜的容量密度大。

8. 发明申请

US20070278627A1 Dielectric device 有权
标题翻译：电介质器件
公开(公告)号：US20070278627A1
公开(公告)日：2007-12-06
申请号：US11806824
申请日：2007-06-04
申请人： Shinichiro Kakei , Hitoshi Saita , Kuniji Koike , Kenji Horino
发明人： Shinichiro Kakei , Hitoshi Saita , Kuniji Koike , Kenji Horino
IPC分类号： H01L23/58
CPC分类号： H01G4/005 , H01G4/1209
摘要： A dielectric device comprises a dielectric layer and first to nth metal layers (where n is an integer of 2 or greater) in contact with the dielectric layer. At least one of the first to nth metal layers contains a base metal. Interfaces between the first to nth metal layers and the dielectric layer have respective arithmetic mean roughnesses of Ra1 to Ran (nm), while an average value Ram (nm) of the arithmetic mean roughnesses of Ra1 to Ran (nm) and a thickness T (nm) of the dielectric layer satisfy T/Ram≧1.3.
摘要翻译：电介质器件包括电介质层和与电介质层接触的第一至第n金属层（其中n为2或更大的整数）。第一至第n金属层中的至少一个含有贱金属。第一至第n金属层与电介质层之间的接口具有相对于Ra 1至N n（nm）的算术平均粗糙度，而平均值Ram（nm） Ra 1至Ra（nm）的算术平均粗糙度和介电层的厚度T（nm）满足T / Ram> = 1.3。

9. 发明申请

US20070025059A1 Dielectric film production process and capacitor 有权
标题翻译：介质膜生产工艺及电容器
公开(公告)号：US20070025059A1
公开(公告)日：2007-02-01
申请号：US11492943
申请日：2006-07-26
申请人： Kiyoshi Uchida , Kenji Horino , Hitoshi Saita
发明人： Kiyoshi Uchida , Kenji Horino , Hitoshi Saita
IPC分类号： H01G4/06
CPC分类号： H01L21/02197 , H01G4/1227 , H01L21/02356 , H01L21/31691 , H01L27/016 , H05K1/162 , H05K2201/0175 , H05K2201/0355
摘要： A capacitor provided with a dielectric film, and a first electrode and second electrode formed sandwiching it and facing each other, wherein the dielectric film has a density exceeding 72% of the theoretical density calculated based on the lattice constant, and either or both of said first electrode and said second electrode contain at least one metal selected from the group consisting of Cu, Ni, Al, stainless steel and inconel.
摘要翻译：一种设置有电介质膜的电容器，以及彼此相对地形成的第一电极和第二电极，其中所述电介质膜的密度超过基于晶格常数计算出的理论密度的72％，并且所述第一电极和第二电极含有选自Cu，Ni，Al，不锈钢和铬镍铁合金中的至少一种金属。

10. 发明授权

US08498095B2 Thin-film capacitor with internally hollow through holes 有权
标题翻译：具有内部中空通孔的薄膜电容器
公开(公告)号：US08498095B2
公开(公告)日：2013-07-30
申请号：US12956060
申请日：2010-11-30
申请人： Yoshihiko Yano , Yasunobu Oikawa , Kenji Horino , Hitoshi Saita
发明人： Yoshihiko Yano , Yasunobu Oikawa , Kenji Horino , Hitoshi Saita
IPC分类号： H01G4/005 , H01G4/20 , H01G4/33 , H01G4/012
CPC分类号： H01G4/33 , H01G4/005 , H01G4/012 , H01G4/20
摘要： A thin-film capacitor that is less prone to generation of internal cracking or peeling is provided. In a thin-film capacitor according to the present embodiment, because through holes H are formed in internal electrodes containing Ni as a principal component in a lamination direction, a surface area of at least some of the through holes H is in the range of 0.19 μm2 to 7.0 μm2, and a ratio of a surface area of the through holes H to a surface area of an entire main surface of the internal electrodes is in the range of 0.05% to 5%, peeling or cracking is suppressed from occurring at the boundaries between the internal electrodes and dielectric layers, and as a result, the yield is enhanced.
摘要翻译：提供了不容易产生内部开裂或剥离的薄膜电容器。在本实施方式的薄膜电容器中，由于在层叠方向上以Ni为主要成分的内部电极形成贯通孔H，所以贯通孔H的至少一部分的表面积为0.19 m 2〜7.0mum 2，通孔H的表面积与内部电极整个表面的表面积的比例在0.05〜5％的范围内，可以抑制剥离或开裂内部电极和电介质层之间的边界，结果提高了产率。

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