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    • 1. 发明申请
    • THIN-FILM DEVICE
    • 薄膜器件
    • US20100246092A1
    • 2010-09-30
    • US12727549
    • 2010-03-19
    • Akira SHIBUEYoshihiko YanoHitoshi SaitaKenji Horino
    • Akira SHIBUEYoshihiko YanoHitoshi SaitaKenji Horino
    • H01G4/06
    • H01G4/33H01G4/232H01G4/30H01L28/40
    • A thin-film device comprises a base electrode made of a metal, a first dielectric layer, a first inner electrode, a second dielectric layer, a second inner electrode, and a third dielectric layer. Letting T1 be the thickness of the lowermost first dielectric layer in contact with the base electrode in the plurality of dielectric layers, and Tmin be the thickness of the thinnest dielectric layer in the plurality of dielectric layers excluding the first dielectric layer, T1>Tmin. Making the first dielectric layer thicker than the thinnest, dielectric layer in the other dielectric layers can increase the distance between a metal part projecting from a metal surface because of the surface roughness of the base electrode and the inner electrode mounted on the lowermost dielectric layer, thereby reducing leakage currents.
    • 薄膜器件包括由金属制成的基极,第一介电层,第一内部电极,第二电介质层,第二内部电极和第三电介质层。 设T1为与多个电介质层中的基极接触的最低的第一电介质层的厚度,Tmin为除了第一电介质层之外的多个电介质层中最薄的电介质层的厚度,T1> Tmin。 由于基极的表面粗糙度和安装在最下层电介质层上的内电极的表面粗糙度,使得第一电介质层比其他电介质层中最薄的电介质层的电介质层增加了从金属表面突出的金属部分之间的距离, 从而减少漏电流。
    • 2. 发明授权
    • Sputtering target for forming thin phosphor film
    • 用于形成薄荧光膜的溅射靶
    • US07540976B2
    • 2009-06-02
    • US10548476
    • 2004-03-05
    • Yoshihiko YanoTomoyuki OikeNaruki KataokaMasaki TakahashiYukio Kawaguchi
    • Yoshihiko YanoTomoyuki OikeNaruki KataokaMasaki TakahashiYukio Kawaguchi
    • C09K11/02C09K11/77C09K11/56C09K11/54C09K11/72C23C14/00C25B11/00C25B13/00B32B9/00B32B19/00C04B14/00C09C1/04
    • A sputtering target for fluorescent thin-film formation comprising a matrix material and a luminescent center material,wherein said matrix material has a chemical composition represented by the following formula (1), and simultaneously satisfies conditions represented by the following inequalities (2) to (5). MIIvAxByOzSw   (1) 0.05≦v/x≦5   (2) 1≦y/x≦6   (3) 0.01≦z/(z+w)≦0.85   (4) 0.6≦(v+x+3y/2)/(z+w)≦1.5   (5) wherein MII represents one or more elements selected from the group consisting of Zn, Cd and Hg, A represents one or more elements selected from the group consisting of Mg, Ca, Sr, Ba and rare earth elements, B represents one or more elements selected from the group consisting of Al, Ga and In, and v, x, y, z and w each represent numerical values satisfying the conditions specified in the inequalities (2) to (5).
    • 1.一种荧光薄膜形成用溅射靶,其特征在于,具有基体材料和发光中心材料,其中,所述基体材料具有下述式(1)所示的化学成分,同时满足下述不等式(2)〜( 5)。 <?in-line-formula description =“In-line Formulas”end =“lead”?> MIIvAxByOzSw(1)<?in-line-formula description =“In-line formula”end =“tail”?> in-line-formula description =“In-line Formulas”end =“lead”?> 0.05 <= v / x <= 5(2)<?in-line-formula description =“In-line Formulas”end = 尾部“?> <?in-line-formula description =”In-line Formulas“end =”lead“?> 1 <= y / x <= 6(3)<?in-line-formula description = 行公式“end =”tail“?> <?in-line-formula description =”In-line Formulas“end =”lead“?> 0.01 <= z /(z + w)<= 0.85(4) in-line-formula description =“In-line Formulas”end =“tail”?> <?in-line-formula description =“In-line Formulas”end =“lead”?> 0.6 <=(v + x + 3y / 2)/(z + w)<= 1.5(5)<?in-line-formula description =“In-line Formulas”end =“tail”?>其中MII表示选自以下的一个或多个元素: 的Zn,Cd和Hg,A表示选自Mg,Ca,Sr,Ba和稀土元素中的一种或多种元素,B表示选自以下的一种或多种元素: 的Al,Ga和In,v,x,y,z和w分别表示满足不等式(2)〜(5)中规定的条件的数值。
    • 7. 发明授权
    • Thin-film capacitor
    • 薄膜电容器
    • US08411411B2
    • 2013-04-02
    • US12876611
    • 2010-09-07
    • Yasunobu OikawaYoshihiko Yano
    • Yasunobu OikawaYoshihiko Yano
    • H01G4/228H01G4/008
    • H01G4/005H01G4/008H01G4/33
    • To provide a thin-film capacitor capable of preventing the degradation of electrical characteristics caused by direct contact between an adhesion layer of a terminal electrode and a dielectric layer, to increase the reliability. The thin-film capacitor comprises: a dielectric layer deposited on a base electrode; an upper electrode layer deposited on the dielectric layer; a terminal electrode including an adhesion layer, a seed layer, and a plating layer; a resin layer for wiring provided between the upper electrode layer and the terminal electrode for isolating the upper electrode layer from the terminal electrode; and a wiring layer provided so as to extend through the resin layer for wiring in contact with the adhesion layer for electrically connecting the upper electrode layer and the terminal electrode, wherein a composition of the wiring layer differs from that of the adhesion layer of the terminal electrode, and wherein a reducing power of the wiring layer to the dielectric layer is smaller than that of the adhesion layer.
    • 提供能够防止由端子电极和电介质层的粘附层之间的直接接触引起的电特性劣化的薄膜电容器,以提高可靠性。 薄膜电容器包括:沉积在基极上的电介质层; 沉积在电介质层上的上电极层; 包括粘合层,种子层和镀层的端子电极; 用于在上电极层和端子电极之间设置用于将上电极层与端子电极隔离的布线用树脂层; 以及布线层,其设置成延伸穿过用于电连接上电极层和端子电极的粘合层接触的布线用树脂层,其中布线层的组成与端子的粘合层的组成不同 电极,并且其中所述布线层到所述电介质层的还原能力小于所述粘合层的还原能力。
    • 8. 发明申请
    • THIN-FILM CAPACITOR AND MANUFACTURING METHOD THEREOF
    • 薄膜电容器及其制造方法
    • US20110075317A1
    • 2011-03-31
    • US12876648
    • 2010-09-07
    • Yasunobu OIKAWAYoshihiko Yano
    • Yasunobu OIKAWAYoshihiko Yano
    • H01G4/005H01G9/00
    • H01G4/33H01G4/005
    • To provide a thin-film capacitor capable of improving the stability of electric connection between an internal electrode layer and a connection electrode. The thin-film capacitor comprises: two or more dielectric layers deposited above a base electrode; an internal electrode layer being deposited between the dielectric layers and having a projecting portion which projects from the dielectric layer when seen from a laminating direction; and a connection electrode electrically connected to the internal electrode layer via at least a part of a surface and an end face of the internal electrode layer included in the projecting portion, wherein a ratio L/t between a projection amount L of the projecting portion of the internal electrode layer with respect to the dielectric layer and a thickness t of the internal electrode layer is 0.5 to 120.
    • 提供能够提高内部电极层和连接电极之间的电连接的稳定性的薄膜电容器。 薄膜电容器包括:沉积在基极上方的两个或多个介电层; 在电介质层之间沉积内部电极层,当从层叠方向观察时,具有从电介质层突出的突出部分; 以及连接电极,其经由包括在所述突出部中的所述内部电极层的表面和端面的至少一部分与所述内部电极层电连接,其中,所述突起部的突出部L的突出量L 内部电极层相对于电介质层和内部电极层的厚度t为0.5〜120。