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1. 发明授权

US08218287B2 Thin-film device 有权
标题翻译：薄膜装置
公开(公告)号：US08218287B2
公开(公告)日：2012-07-10
申请号：US12727549
申请日：2010-03-19
申请人： Akira Shibue , Yoshihiko Yano , Hitoshi Saita , Kenji Horino
发明人： Akira Shibue , Yoshihiko Yano , Hitoshi Saita , Kenji Horino
IPC分类号： H01G4/06
CPC分类号： H01G4/33 , H01G4/232 , H01G4/30 , H01L28/40
摘要： A thin-film device comprises a base electrode made of a metal, a first dielectric layer, a first inner electrode, a second dielectric layer, a second inner electrode, and a third dielectric layer. Letting T1 be the thickness of the lowermost first dielectric layer in contact with the base electrode in the plurality of dielectric layers, and Tmin be the thickness of the thinnest dielectric layer in the plurality of dielectric layers excluding the first dielectric layer, T1>Tmin. Making the first dielectric layer thicker than the thinnest, dielectric layer in the other dielectric layers can increase the distance between a metal part projecting from a metal surface because of the surface roughness of the base electrode and the inner electrode mounted on the lowermost dielectric layer, thereby reducing leakage currents.
摘要翻译：薄膜器件包括由金属制成的基极，第一介电层，第一内部电极，第二电介质层，第二内部电极和第三电介质层。设T1为与多个电介质层中的基极接触的最低的第一电介质层的厚度，Tmin为除了第一电介质层之外的多个电介质层中最薄的电介质层的厚度，T1> Tmin。由于基极的表面粗糙度和安装在最下层电介质层上的内电极的表面粗糙度，使得第一电介质层比其他电介质层中最薄的电介质层的电介质层增加了从金属表面突出的金属部分之间的距离，从而减少漏电流。

2. 发明授权

US07883905B2 Process for producing a BST thin-film capacitor having increased capacity density and reduced leakage current density 有权
标题翻译：具有增加的容量密度和降低的漏电流密度的BST薄膜电容器的制造方法
公开(公告)号：US07883905B2
公开(公告)日：2011-02-08
申请号：US11989600
申请日：2006-07-28
申请人： Hitoshi Saita , Kiyoshi Uchida , Kenji Horino , Eri Aizawa
发明人： Hitoshi Saita , Kiyoshi Uchida , Kenji Horino , Eri Aizawa
IPC分类号： H01L21/00
CPC分类号： H01G4/1227 , C23C18/1216 , C23C18/1279 , H01G4/33 , H01L21/02197 , H01L21/02282 , H01L21/31691 , H01L27/016 , H01L28/55
摘要： It is an object of the invention to provide a process for production of a thin-film capacitor that can simultaneously achieve improved capacity density and reduced leakage current density for barium strontium titanate thin-films. There is provided a process for production of thin-film capacitors that includes a metal oxide thin-film forming step in which an organic dielectric starting material is fired to form a barium strontium titanate thin-film, wherein the firing atmosphere used is an oxygen-containing inert gas atmosphere, and the barium strontium titanate thin-film formed by the process has a larger capacity density than the capacity density of the barium strontium titanate thin-film fired in an oxygen atmosphere.
摘要翻译：本发明的目的是提供一种可以同时实现钛酸锶钡薄膜的容量密度提高和漏电流密度降低的薄膜电容器的制造方法。提供一种制造薄膜电容器的方法，其包括金属氧化物薄膜形成步骤，其中将有机介电起始材料烧制以形成钛酸钡锶钡薄膜，其中所用的烧成气氛为氧 - 并且通过该方法形成的钛酸钡锶薄膜的电容密度比在氧气氛中烧制的钛酸钡锶薄膜的容量密度大。

3. 发明申请

US20070230086A1 Thin film capacitor and method of manufacturing thin film capacitor 有权
标题翻译：薄膜电容器及制造薄膜电容器的方法
公开(公告)号：US20070230086A1
公开(公告)日：2007-10-04
申请号：US11730154
申请日：2007-03-29
申请人： Hitoshi Saita , Yuko Saya , Kiyoshi Uchida , Kenji Horino
发明人： Hitoshi Saita , Yuko Saya , Kiyoshi Uchida , Kenji Horino
IPC分类号： H01G4/008
CPC分类号： H01G4/008 , H01G4/33 , H01L27/016 , H01L27/0682 , H01L27/0802 , H01L27/0811 , H01L28/55 , H05K1/09 , H05K1/162 , H05K2201/0175 , H05K2201/0179 , H05K2201/0355 , Y10T29/417 , Y10T29/435
摘要： A thin film capacitor with high capacity and low leak current is provided. The thin film capacitor includes a nickel substrate with nickel (Ni) purity of 99.99 weight percent or above, and a dielectric layer and an electrode layer disposed in this order on the nickel substrate. The thin film capacitor is typically manufactured as follows. A precursor dielectric layer is formed on a nickel substrate with nickel purity of 99.99 weight percent or above, and is subjected to annealing to form a dielectric layer. The diffusion of impurities from the nickel substrate to the precursor dielectric layer during annealing is suppressed.
摘要翻译：提供了具有高容量和低漏电流的薄膜电容器。薄膜电容器包括镍（Ni）纯度为99.99重量％以上的镍基板，以及依次设置在镍基板上的电介质层和电极层。薄膜电容器通常如下制造。在镍基底上形成前体电介质层，其镍纯度为99.99重量％以上，并进行退火以形成电介质层。抑制了退火时的杂质从镍基体向前体电介质层的扩散。

4. 发明申请

US20060071263A1 Dielectric thin film, dielectric thin film device, and method of production thereof 有权
标题翻译：介电薄膜，介电薄膜器件及其制造方法
公开(公告)号：US20060071263A1
公开(公告)日：2006-04-06
申请号：US11236724
申请日：2005-09-28
申请人： Kiyoshi Uchida , Kenji Horino , Hitoshi Saita
发明人： Kiyoshi Uchida , Kenji Horino , Hitoshi Saita
IPC分类号： H01L21/8242 , H01L29/94
CPC分类号： H01L21/02197 , H01L21/02323 , H01L21/02337 , H01L21/31691 , H01L28/55 , H01L28/65
摘要： To provide a dielectric thin with a high dielectric constant, a low leakage current, and stable physical properties and electrical properties and to provide a thin film capacitor or other thin film dielectric device with a high capacitance and high reliability and a method of production of the same, a dielectric thin film containing oxides such as barium strontium titanate expressed by the formula (BaxSr(1-x))aTiO3 (0.5
摘要翻译：为了提供具有高介电常数，低漏电流和稳定物理性能和电性能的电介质薄膜，并提供具有高电容和高可靠性的薄膜电容器或其它薄膜电介质器件，以及生产的方法相同的是，含有氧化物如钛酸锶钡的氧化物的电介质薄膜由式（Ba> Sr Sr>>（（（（））TiO TiO TiO TiO TiO TiO TiO TiO TiO TiO TiO TiO TiO TiO TiO TiO TiO TiO TiO （0.5

5. 发明授权

US6077453A Ferrite, and transformer and method for driving it 有权
标题翻译：铁氧体，变压器及其驱动方法
公开(公告)号：US6077453A
公开(公告)日：2000-06-20
申请号：US231763
申请日：1999-01-15
申请人： Hitoshi Saita , Tomofumi Kuroda , Shigeo Okamoto , Naoyoshi Sato
发明人： Hitoshi Saita , Tomofumi Kuroda , Shigeo Okamoto , Naoyoshi Sato
IPC分类号： C01G49/00 , C04B35/26 , C04B35/38 , H01F1/34 , H01F27/255 , C04D35/26
CPC分类号： C04B35/2658 , H01F1/344 , H01F27/255 , C04B2235/3232 , C04B2235/3244 , C04B2235/3251 , C04B2235/3262 , C04B2235/3275 , C04B2235/3277 , C04B2235/3284 , C04B2235/3293 , C04B2235/3418 , C04B2235/604
摘要： Provided are an Mn--Zn ferrite in which the core loss is low and Bs is high at high temperatures; a transformer capable of being small-sized and suitable to use at high temperatures; and a method for efficiently driving the transformer. Also provided is a transformer capable of being small-sized and suitable to use in a broad temperature range including high temperatures. Further provided are a high-efficiency transformer capable of being small-sized, in which the core loss in the ferrite core is low and the saturation magnetic flux density is high therein at the temperature at which the transformer is driven; and a high-efficiency driving method for the transformer. Depending on its use, Mn--Zn ferrite to be the ferrite core for the transformers comprises, as the essential components, specific amounts of Fe.sub.2 O.sub.3, ZnO and MnO, and, as the side components, specific amounts of SiO.sub.2, CaCO.sub.3, Nb.sub.2 O.sub.5 and ZrO.sub.2. The core of the transformers is made of the Mn--Zn ferrite.
摘要翻译：提供一种其中铁损低低并且Bs在高温下高的Mn-Zn铁氧体; 能够小型化并适用于高温使用的变压器; 以及有效地驱动变压器的方法。还提供了能够小型化并且适合在包括高温的宽温度范围内使用的变压器。还提供了一种能够在变压器驱动的温度下铁氧体磁芯的磁芯损耗低和饱和磁通密度高的小型高效变压器，和变压器的高效率驱动方法。根据其用途，用作变压器的铁氧体磁心的Mn-Zn铁氧体作为必要成分，含有Fe 2 O 3，ZnO，MnO的特定量，作为侧面成分，可以使用特定量的SiO 2，CaCO 3，Nb 2 O 5，ZrO 2 。变压器的核心由Mn-Zn铁氧体制成。

6. 发明申请

US20100265632A1 THIN-FILM CAPACITOR AND ELECTRONIC CIRCUIT BOARD 有权
标题翻译：薄膜电容器和电子电路板
公开(公告)号：US20100265632A1
公开(公告)日：2010-10-21
申请号：US12756520
申请日：2010-04-08
申请人： Hitoshi SAITA , Naoto TSUKAMOTO , Akira SHIBUE , Kenji HORINO
发明人： Hitoshi SAITA , Naoto TSUKAMOTO , Akira SHIBUE , Kenji HORINO
IPC分类号： H01G4/10
CPC分类号： H01G4/33 , C04B35/4682 , C04B2235/3224 , C04B2235/3239 , C04B2235/3251 , C04B2235/3262 , C04B2235/441 , C04B2235/764 , C04B2235/79 , H01G4/1227 , H01L27/016 , H01L28/40 , H05K1/185
摘要： The present invention provides a thin-film capacitor having an insulation resistance value higher than that conventionally available and high reliability. The thin-film capacitor of the present invention comprises a dielectric thin film and electrodes opposing each other through the dielectric thin film interposed therebetween; wherein the dielectric thin film contains a perovskite-type composite oxide having a composition expressed by the following chemical formula (1), Mn, and at least one kind of element M selected from the group consisting of V, Nb, and Ta; wherein the dielectric thin film has an Mn content of 0.05 to 0.45 mol with respect to 100 mol of the composite oxide; and wherein the dielectric thin film has a total element M content of 0.05 to 0.5 mol with respect to 100 mol of the composite oxide: AyBO3 (1) where A is at least one kind of element selected from the group consisting of Ba, Sr, Ca, and Pb, B is at least one kind of element selected from the group consisting of Ti, Zr, Hf, and Sn, and 0.97≦y≦0.995.
摘要翻译：本发明提供一种绝缘电阻值高于现有技术和高可靠性的薄膜电容器。本发明的薄膜电容器包括介电薄膜和介于其间的电介质薄膜彼此相对的电极; 其特征在于，所述电介质薄膜含有由以下化学式（1）表示的组成为Mn的钙钛矿型复合氧化物和选自V，Nb，Ta中的至少一种元素M; 其中所述电介质薄膜相对于所述复合氧化物100摩尔的Mn含量为0.05〜0.45摩尔; 并且其中所述电介质薄膜相对于100摩尔所述复合氧化物的总元素M含量为0.05至0.5摩尔：AyBO 3（1）其中A是选自Ba，Sr， Ca和Pb，B是选自Ti，Zr，Hf和Sn中的至少一种元素，以及0.97和nlE; y＆nlE; 0.995。

7. 发明申请

US20100246092A1 THIN-FILM DEVICE 有权
标题翻译：薄膜器件
公开(公告)号：US20100246092A1
公开(公告)日：2010-09-30
申请号：US12727549
申请日：2010-03-19
申请人： Akira SHIBUE , Yoshihiko Yano , Hitoshi Saita , Kenji Horino
发明人： Akira SHIBUE , Yoshihiko Yano , Hitoshi Saita , Kenji Horino
IPC分类号： H01G4/06
CPC分类号： H01G4/33 , H01G4/232 , H01G4/30 , H01L28/40
摘要： A thin-film device comprises a base electrode made of a metal, a first dielectric layer, a first inner electrode, a second dielectric layer, a second inner electrode, and a third dielectric layer. Letting T1 be the thickness of the lowermost first dielectric layer in contact with the base electrode in the plurality of dielectric layers, and Tmin be the thickness of the thinnest dielectric layer in the plurality of dielectric layers excluding the first dielectric layer, T1>Tmin. Making the first dielectric layer thicker than the thinnest, dielectric layer in the other dielectric layers can increase the distance between a metal part projecting from a metal surface because of the surface roughness of the base electrode and the inner electrode mounted on the lowermost dielectric layer, thereby reducing leakage currents.
摘要翻译：薄膜器件包括由金属制成的基极，第一介电层，第一内部电极，第二电介质层，第二内部电极和第三电介质层。设T1为与多个电介质层中的基极接触的最低的第一电介质层的厚度，Tmin为除了第一电介质层之外的多个电介质层中最薄的电介质层的厚度，T1> Tmin。由于基极的表面粗糙度和安装在最下层电介质层上的内电极的表面粗糙度，使得第一电介质层比其他电介质层中最薄的电介质层的电介质层增加了从金属表面突出的金属部分之间的距离，从而减少漏电流。

8. 发明申请

US20070049026A1 Dielectric film and process for its fabrication 有权
标题翻译：电介质膜及其制造工艺
公开(公告)号：US20070049026A1
公开(公告)日：2007-03-01
申请号：US11508923
申请日：2006-08-24
申请人： Yuki Miyamoto , Hitoshi Saita
发明人： Yuki Miyamoto , Hitoshi Saita
IPC分类号： H01L21/44 , H01L21/31
CPC分类号： H01L21/02263 , C23C18/1216 , C23C18/1241 , C23C18/125 , C23C18/1283 , H01L21/31691
摘要： A dielectric film production process comprising a baking step in which a dielectric film is formed by heating a precursor layer formed on a metal layer, wherein the metal layer contains at least one type of metal selected from the group consisting of Cu, Ni, Al, stainless steel and inconel, and during at least part of the baking step the precursor layer is heated in a reduced pressure atmosphere.
摘要翻译：一种电介质膜制造方法，其特征在于，包括：烧成工序，其中通过加热形成在金属层上的前体层形成电介质膜，其中所述金属层含有选自Cu，Ni，Al，不锈钢和铬镍铁合金，并且在至少部分烘烤步骤期间，将前体层在减压气氛中加热。

9. 发明申请

US20060072282A1 Dielectric thin film, thin film capacitor element, and method for manufacturing thin film capacitor element 审中-公开
标题翻译：介电薄膜，薄膜电容器元件以及薄膜电容器元件的制造方法
公开(公告)号：US20060072282A1
公开(公告)日：2006-04-06
申请号：US11235051
申请日：2005-09-27
申请人： Kiyoshi Uchida , Kenji Horino , Hitoshi Saita
发明人： Kiyoshi Uchida , Kenji Horino , Hitoshi Saita
IPC分类号： H01G4/20
CPC分类号： H01L21/02197 , H01G4/1227 , H01G4/33 , H01L21/02266 , H01L21/31691 , H01L27/016 , H01L28/55 , H01L28/65
摘要： The present invention provides a dielectric thin film whose composition is expressed by the formula (Ba1-xSrx)yTiO3 (0.18≦x≦0.45, 0.96≦y≦1.04), and whose peak intensity ratio I(100)I(110) is from 0.02 to 2.0 when I(100) is the peak intensity of the diffraction line of the (100) plane, and I(110) is the peak intensity of the diffraction line of the (110) plane in an X-ray diffraction chart of the dielectric thin film.
摘要翻译：本发明提供了一种电介质薄膜，其组成由式（Ba x 1-x x Sr x）y TiO 2 3 （100≤I≤1.0），并且当I（100）为峰强度时，峰强度比I（100）I（110）为0.02〜2.0，（100）面的衍射线和I（110）是电介质薄膜的X射线衍射图中的（110）面的衍射线的峰值强度。

10. 发明授权

US08498095B2 Thin-film capacitor with internally hollow through holes 有权
标题翻译：具有内部中空通孔的薄膜电容器
公开(公告)号：US08498095B2
公开(公告)日：2013-07-30
申请号：US12956060
申请日：2010-11-30
申请人： Yoshihiko Yano , Yasunobu Oikawa , Kenji Horino , Hitoshi Saita
发明人： Yoshihiko Yano , Yasunobu Oikawa , Kenji Horino , Hitoshi Saita
IPC分类号： H01G4/005 , H01G4/20 , H01G4/33 , H01G4/012
CPC分类号： H01G4/33 , H01G4/005 , H01G4/012 , H01G4/20
摘要： A thin-film capacitor that is less prone to generation of internal cracking or peeling is provided. In a thin-film capacitor according to the present embodiment, because through holes H are formed in internal electrodes containing Ni as a principal component in a lamination direction, a surface area of at least some of the through holes H is in the range of 0.19 μm2 to 7.0 μm2, and a ratio of a surface area of the through holes H to a surface area of an entire main surface of the internal electrodes is in the range of 0.05% to 5%, peeling or cracking is suppressed from occurring at the boundaries between the internal electrodes and dielectric layers, and as a result, the yield is enhanced.
摘要翻译：提供了不容易产生内部开裂或剥离的薄膜电容器。在本实施方式的薄膜电容器中，由于在层叠方向上以Ni为主要成分的内部电极形成贯通孔H，所以贯通孔H的至少一部分的表面积为0.19 m 2〜7.0mum 2，通孔H的表面积与内部电极整个表面的表面积的比例在0.05〜5％的范围内，可以抑制剥离或开裂内部电极和电介质层之间的边界，结果提高了产率。

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