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1. 发明专利

JP2001244273A DIODE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2001244273A
公开(公告)日：2001-09-07
申请号：JP2000054140
申请日：2000-02-29
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： MURAKAMI SUSUMU , MIURA MASATAMI , TAKAHASHI MASAO , KOBAYASHI SATSUKI
IPC分类号： H01L23/29 , H01L21/329 , H01L23/31 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To obtain a diode whose electric characteristic is not degraded when a thermal shock is applied repeatedly many times during its use and to obtain its manufacturing method. SOLUTION: In a bevel-shaped diode, one main face is a (111) plane, and a p+ junction, a p-junction and an n+ junction are exposed on its side face. It is machined in such a way that its diameter as viewed from the above an intermediate p-layer 1 is larger than the diameter of a p+ layer 2 and an n+ layer 3. A bevel angle is formed at 75 deg. or more by an oxide etching operation and an alkali etching operation. A flat end face is formed in such a way that irregularities are not generated on the end face of the p-junction and the n+ junction. As a result, it is possible to provide a diode whose cut off characteristic in the reverse direction is superior.

2. 发明专利

JPH1027917A DIODE 失效
公开(公告)号：JPH1027917A
公开(公告)日：1998-01-27
申请号：JP17895096
申请日：1996-07-09
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： MURAKAMI SUSUMU , MATSUZAKI MITSUSACHI , SUGANO MINORU , KOBAYASHI SATSUKI , ABE TAKAHIRO
IPC分类号： H01L21/316 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To avoid the increase in leakage current of the decline in withstand voltage due to the life test such as high temperature inverse bias by reducing the leakage current in the clocking state with high inverse direction voltage applied by provident the III group element in a glass film is provided with the III group element diffused region diffused on a semiconductor surface. SOLUTION: The III group element diffused region 4 is formed so as to diffuse the III group element in the periodic table in a glass film in the glass backing time of a glass film 6 on the surface of an n type semiconductor region 1. At this point, if the charge density N is negative, the channel resistance declines, but if the charge density is positive, a leakage surest is generated, therefore it is recommended that, as for the net charge density in consideration of the reliability, the optimum value is to be within the range of -3×10 /cm -2×10 /cm while the impurity total amount per unit area of the III group element diffused region 4 is not to exceed 1×10 /cm . Through these procedures, the leakage current in the block state with high inverse directional voltage impressed can be reduced thereby enabling the increase in the leakage current and decline in withstand voltage to be avoided.

3. 发明专利

JPH1012897A GLASS-COATED SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH1012897A
公开(公告)日：1998-01-16
申请号：JP16195996
申请日：1996-06-21
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： MURAKAMI SUSUMU , MATSUZAKI HITOSHI , TSURUOKA MASAO , SUGANO MINORU
IPC分类号： H01L21/316 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To realize a mesa-type glass-coated semiconductor device with a high withstand voltage, which is coated with lead glass, so as to reduce a leakage current to an extremely small amount, and to obtain high reliability. SOLUTION: An n-type semiconductor region 1 is used as a semiconductor substrate. A p+ type semiconductor region 2 having a high impurity concentration is formed on one main surface of the substrate, and an n+ type semiconductor region 3 having a high impurity concentration is formed on the other main surface of the substrate. Mesa grooves are formed from one of the main surfaces to predetermined regions such that p-n junctions are exposed, and a first insulating film 6 of silicon nitride and a glass film 5 are sequentially formed at the mesa portions. As the silicon nitride film is provided between the glass film and the semiconductor, diffusion of aluminum in the glass into the semiconductor is prevented, and occurrence of a leak current due to a channel current is prevented, thereby the leakage current is reduced.

4. 发明专利

JP2001111063A DIODE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2001111063A
公开(公告)日：2001-04-20
申请号：JP28383199
申请日：1999-10-05
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： MURAKAMI SUSUMU , NARITA KAZUTOYO , MIURA MASATAMI , NAKAJIMA TSUTOMU , SHIKURA TOSHIO
IPC分类号： H01L29/861 , H01L21/329
摘要： PROBLEM TO BE SOLVED: To solve a problem where unevenness appears on an end face in that (111) face is being exposed, the fluctuation of rejection characteristics is large, and reliability is low. SOLUTION: In the diode, a semiconductor substrate and one surface are set to (111) crystal surface, an angle being formed by the horizontal surface of one surface of the semiconductor substrate and a surface where the pn junction between p- and n+-type semiconductor regions is exposed is set to 75 degrees or more and less than 90 degrees.

5. 发明专利

JP2000216410A MANUFACTURE OF SCHOTTKY BARRIER DIODE 失效
公开(公告)号：JP2000216410A
公开(公告)日：2000-08-04
申请号：JP1462099
申请日：1999-01-22
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： MURAKAMI SUSUMU , MATSUZAKI MITSUSACHI , SUGANO MINORU , SHIODA MASASHI
IPC分类号： C23C18/34 , H01L21/288 , H01L29/47 , H01L29/872
摘要： PROBLEM TO BE SOLVED: To obtain a Schottky barrier diode capable of solder connection by forming a barrier electrode constituting a Schottky barrier diode by using electroless nickel plating. SOLUTION: This diode consists of a first conductivity type semiconductor layer 1, a barrier electrode 21 which is formed on the main surface of the semiconductor layer 1 by nickel plating, and a second conductivity type semiconductor region 2 which is formed around the barrier electrode 21 and in ohmic contact with it. The barrier electrode formed by nickel plating is connected with an outer terminal via a solder layer 25, and a Schottky barrier diode is manufactured. In this manufacturing method, the barrier electrode 21 is formed by electroless plating in which dimethylamine borane is used as reducing agent.

6. 发明专利

JPH1167759A MANUFACTURE OF SEMICONDUCTOR SUBSTRATE WITH HIGH BREAKDOWN VOLTAGE 失效
公开(公告)号：JPH1167759A
公开(公告)日：1999-03-09
申请号：JP22774997
申请日：1997-08-25
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： FUKUI SHOICHI , TSURUOKA MASAO , MURAKAMI SUSUMU , TAKAHASHI KIKUO , YOSHINO KATSUNOBU
IPC分类号： H01L23/29 , H01L21/31 , H01L21/316 , H01L21/329 , H01L21/677 , H01L21/68 , H01L23/31
摘要： PROBLEM TO BE SOLVED: To reduce leak current with high reverse voltage applied by first forming a silicon dioxide film while applying ultraviolet rays onto a pn junction surface and thereafter sealing the silicon dioxide film and a second film adjacent to the silicon dioxide film using a molding resin. SOLUTION: Far ultraviolet rays are applied onto a semiconductor surface to form a silicon dioxide film 4 that becomes a first passivation film. Then, a second passivation film 5 is formed by covering the film 4 and first solder portions 12 and 13. Further, a molding resin 6 serving also as a package is formed by covering the film 5, an anode electrode 22 and a cathode electrode 23. A polyimide resin 5 of which the film 5 is made is applied, and cured in an atmosphere of nitrogen at temperatures ranging from 150 to 250 deg.C. As the final step, an epoxy resin 6 is formed by a transfer molding method, and the resin 6 is after-cured in the atmosphere of nitrogen at a temperature lower than the temperature for curing the film 5.

7. 发明专利

JPH1117197A SCHOTTKY DIODE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH1117197A
公开(公告)日：1999-01-22
申请号：JP16686397
申请日：1997-06-24
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： MURAKAMI SUSUMU , TSURUOKA MASAO , MATSUZAKI MITSUSACHI , SUGANO MINORU
IPC分类号： H01L29/872 , C23C18/31 , H01L29/47
摘要： PROBLEM TO BE SOLVED: To facilitate solder connection and to achieve high withstand pressure, by using metal silicide comprising Ni or Cr as a barrier electrode, and forming an electrode comprising the same metal furthermore for facilitating the connection with the solder. SOLUTION: On the surface of an n-type semiconductor region 1, a first nickel silicide layer 21 having, e.g. the NiSi structure in contact with a Scottky is formed. An the neighborhood of the first nickel silicide layer 21, a second nickel silicide layer 22 having, e.g. the Ni2 Si structure having the thickness thinner than the first nickel silicide layer 21, is formed. Furthermore, a nickel electrode 23 is formed an the neighborhood of the second nickel silicide layer 22. In order to facilitate solder connection in this way, the outermost layer or the Schotcky electrode is made no be the Ni electrode, and the second silicide layer 22 is provided between the first nickel silicide layer 21 and the nickel electrode 23. Thus, the bonding strength can be made high, and the thick nickel electrode 23 can be formed.

8. 发明专利

JPH10294296A ELECTRODE FORMATION OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH10294296A
公开(公告)日：1998-11-04
申请号：JP10003897
申请日：1997-04-17
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： MATSUZAKI MITSUSACHI , MURAKAMI SUSUMU , TSURUOKA MASAO , SUGANO MINORU
IPC分类号： C23C18/18 , C23C18/36 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To form an electrode of a semiconductor device of uniform and high quality electroless nickel plating by cleaning an exposed semiconductor surface and thereafter immersing it in catalytic water solution wherein pure water of low dissolved oxygen is used as water. SOLUTION: Boron ions are implanted to one surface of a silicon substrate 1 and phosphorus ions are implanted to the other surface, a silicon oxide film is formed by oxidation, a part of a silicon oxide film is removed and etched for forming a mesa groove wherein a p-n junction consisting of a p -type semiconductor region 2 and an n -type semiconductor region 3 is exposed. Then, a silicon oxide film is removed and a glass film 5 is formed. Thereafter, a silicon oxide film formed in a surface of the p -type semiconductor region 2 which becomes an anode layer and the n -type semiconductor region 3 which becomes a cathode layer is removed. After it is immersed in catalytic solution wherein pure water of low dissolved oxygen is used and is subjected to catalyzation treatment, first electroless nickel plating is carried out and an anode electrode 20 and a cathode electrode 30 are formed.

9. 发明专利

JP2001244282A METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001244282A
公开(公告)日：2001-09-07
申请号：JP2000052038
申请日：2000-02-28
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： YONEYAMA KAZUO , YAMAZAKI TATSUO , FUKUI SHOICHI , MURAKAMI SUSUMU
IPC分类号： H01L21/56 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which has a high voltage resistance and has an extremely little leakage current by forming a stable passivation film on the surface of a pn junction. SOLUTION: On the surface of an exposed pn junction, a silicon dioxide film which will become a first passivation film 4 is formed. A second passivation film 5 is formed in contact with the first one. Then, the whole body is sealed with molding resin 6. By heat-curing the molding resin at a temperature which is higher than an inflection point in an oxygen emission quantity of the molding resin and lower than a decomposition start point of the molding resin, oxygen is supplied to the first passivation film 1 to stabilize it. In order to supply a great amount of oxygen to the passivation film, the heat-curing process is performed between 220 and 270 deg.C.

10. 发明专利

JPH1117162A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH1117162A
公开(公告)日：1999-01-22
申请号：JP17146997
申请日：1997-06-27
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： MURAKAMI SUSUMU , TSURUOKA MASAO , MATSUZAKI MITSUSACHI , SUGANO MINORU
IPC分类号： H01L29/74
摘要： PROBLEM TO BE SOLVED: To exterminate the defect by short circuits between electrodes and to perform manufacturing with the excellent yield rate, by forming two electrodes on one main surface of a semiconductor for connecting the electrodes, and forming an insulating film for preventing the short circuit of the semiconductor for connecting the electrodes between the electrodes. SOLUTION: On the surface of a p -type semiconductor region 3, on the exposed surface of a p-type semiconductor region 2 with is not covered with a silicon dioxide film 6, and on the surface of an n -type semiconductor region which is not covered with the silicon dioxide film, nickel silicides 21, 31 and 41 formed of electroless deposition are formed. On the nickel silicones 21, 31 and 41, nickel electrodes 22, 32 and 42 are formed. On the nickel electrodes 22, 32 and 42, a gate electrode 20, an anode electrode 30, and a cathode electrode 40 are formed through solders 23, 33 and 43. A glass film 10 for preventing the short circuits of the solders is formed on the silicon dioxide film 6. Thus, the short circuit can be prevented, and the manufacturing yield rate can be greatly improved.

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