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1. 发明专利

JPS5759370A High voltage semiconductor device 失效
标题翻译：高电压半导体器件
公开(公告)号：JPS5759370A
公开(公告)日：1982-04-09
申请号：JP13429080
申请日：1980-09-29
申请人： Hitachi Haramachi Semiconductor Ltd , Hitachi Ltd
发明人： KAMIYA SHIGERU , SHIMA KENZOU , HIDAKA TOSHIYUKI
IPC分类号： H01L29/73 , H01L21/331 , H01L25/07
CPC分类号： H01L25/074 , H01L24/01
摘要： PURPOSE:To obtain a device characterized by low noises, high breakdown strength, and small high temperature leakage currents, by using semiconductor elements in which gold is doped on parts adjacent to both elelctrodes, and using semiconductor elements in which platinum is doped on the other part. CONSTITUTION:A plurality of the semiconductor elements 3 and 4 having P-N junction are layered between a pair of electrodes 1a and 1b so as to form a series connection, and bonded in a rod shape with a brazing material. The semiconductor elements 3a and 3b wherein gold is doped as life time killer metal and which has the breakdown strength higher than the voltages shared by the semiconductor elements when reverse voltage are applied are arranged at the parts adjacent to both electrodes 1a and 1b. The semiconductor elements 4 in which platinum is doped is arranged on the other part. In this constitution, the breakdown strength is made higher by the elements 4, the high termperature leaking currents become small, restoring time becomes long due to the elements 3a and 3b, and the noises can be prevented.
摘要翻译：目的：通过使用在两个电极附近的部分上掺杂金的半导体元件，并使用其中铂掺杂的半导体元件，获得具有低噪声，高击穿强度和小的高温漏电流的器件部分。构成：将多个具有P-N结的半导体元件3和4层叠在一对电极1a和1b之间，以形成串联连接，并用钎焊材料将其接合成棒状。其中金被掺杂为寿命终止金属并且当施加反向电压时具有高于由半导体元件共有的电压的击穿强度的半导体元件3a和3b布置在与两个电极1a和1b相邻的部分。其中掺杂有铂的半导体元件4布置在另一部分上。在这种结构中，元件4，高温漏电流变小，由于元件3a和3b而导致恢复时间变长，因此能够防止噪声，从而使击穿强度更高。

2. 发明专利

JPS61134052A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS61134052A
公开(公告)日：1986-06-21
申请号：JP25563884
申请日：1984-12-05
申请人： Hitachi Haramachi Semiconductor Ltd , Hitachi Ltd
发明人： TANAKA MINORU , KAMIYA SHIGERU , KOMINE MITSURU , HIDAKA TOSHIYUKI , YOSHINO KATSUNOBU
IPC分类号： H01L23/31 , H01L25/07
CPC分类号： H01L25/074 , H01L23/3107 , H01L24/33 , H01L2924/10253 , H01L2924/00
摘要： PURPOSE:To obtain the TV high-voltage diode which avoids field concentration and increases breakdown strength by a method wherein a high-voltage diode is composed of block pellets increased in curvature at the corners. CONSTITUTION:Semiconductor block pellets 1 with Si pellets 1a, 1b,...1n etched at corners so as to have suitable curvatures and joined by adhesion with solders 4 and Si pellets 5a, 5b of low resistivity at both ends are arranged. Further, electrodes 2a, 2b to which outer leads 3a, 3b are welded in percussion are adhered to both ends of the block pellet. The diagram shows a structure calcined by being covered with glass from one electrode 2a to the other electrode 2b. Comparison of the cross-sectional shapes of the Si pellets 1a, 1b...1n with the conventional ones proves that the curvature of Si pellet corners is larger than conventional.
摘要翻译：目的：获得避免场浓度的电视高压二极管，通过高压二极管由拐角处的曲率增加的块状丸粒组成的方法获得提高击穿强度。构成：在角部蚀刻具有Si粒子1a，1b，... 1n的半导体块状粒料1，以具有合适的曲率并通过与焊料4的粘合和两端的低电阻率的Si粒子5a，5b接合。此外，将外部引线3a，3b以冲击方式焊接的电极2a，2b粘附到块状块的两端。该图示出了通过被玻璃从一个电极2a覆盖到另一个电极2b而煅烧的结构。 Si颗粒1a，1b ... 1n的横截面形状与常规的横截面形状的比较证明了Si颗粒角的曲率大于常规。

3. 发明专利

JPS5917276A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS5917276A
公开(公告)日：1984-01-28
申请号：JP12724882
申请日：1982-07-20
申请人： Hitachi Haramachi Semiconductor Ltd , Hitachi Ltd
发明人： KAMIYA SHIGERU , OOTAKE NAGAO , SHIMA KENZOU
IPC分类号： H01L25/07
CPC分类号： H01L25/074 , H01L2924/0002 , H01L2924/00
摘要： PURPOSE:To offer the semiconductor device excluded with conduction noise, avalanche noise and moreover, easy to manufacture by a method wherein the device is constructed of semiconductor pellets of the plural sheets having P-N junctions and to perform high-frequency action and laminated between a pair of electrodes arranging the rectifying directions thereof, and a high resistor consisting of a semiconductor interposed between the electrodes adjoining to the cathode side thereof. CONSTITUTION:Depletion layers are formed though a little in P-N junctions of the respective silicon pellets 4a-4n to make junction capacitances to exist, and when a voltage is applied, and junction capacitances are charged to reach conduction, a time constant expressed by the product of junction capacitance and resistance is enlarged because of interposition of the high resistor 6, and forward recovery time is elongated. Accordingly, the current rise rate di/dt at forward recovery time is reduced, a counter electromotive voltage is reduced, and conduction noise is not generated. Moreover, when a reversely directional voltage is applied, the avalanches are generated locally in the silicon pellets 4a-4n on the anode side because of ununiformity of the alloted voltage rate, and even when pulse noise is generated, because the peak value thereof is limited by the high resistor 6, it is not transmitted to a Braun tube as avalanche noise.
摘要翻译：目的：提供排除导电噪声，雪崩噪声的半导体器件，此外，通过一种方法容易制造，其中器件由具有PN结的多个片的半导体芯片构成，并且执行高频作用并且层叠在一对之间设置排列其整流方向的电极以及插入在与其阴极侧相邻的电极之间的半导体构成的高电阻。构成：在各个硅片4a-4n的PN结中形成消耗层，以形成结电容，并且当施加电压并且结电容被充电以达到传导时，由产品表示的时间常数的结电容和电阻由于插入高电阻6而被扩大，并且正向恢复时间延长。因此，正向恢复时的电流上升率di / dt降低，反电动势降低，不产生传导噪声。此外，当施加反方向电压时，由于分压电压率的不均匀性，即使产生脉冲噪声，由于其峰值受限制，因此在阳极侧的硅片4a-4n中局部产生雪崩通过高电阻6，其不会作为雪崩噪声传输到布朗管。

4. 发明专利

JPS63164350A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63164350A
公开(公告)日：1988-07-07
申请号：JP30854786
申请日：1986-12-26
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： KAMIYA SHIGERU , KOMINE MITSURU , KAMATA MASAO
IPC分类号： H01L25/07
摘要： PURPOSE:To prevent the containing of bubbles in a bonding section, and to eliminate the defective breaking, etc., of a semiconductor device by laminating and arranging silicon wafers in a solder melt and forming an silicon-wafer laminate. CONSTITUTION:An silicon-wafer fixture 11 with a cylindrical section having the same circular section as the shapes of silicon wafers 1 is disposed into a solder melt 10 filled into a vessel. The wafers 1 are dipped into the solder melt 10 alternately with spacers 12 while the directions of P-N junctions are arranged, and are disposed into the fixture 11 in succession. When the spacers 12 have the same external shape as the wafers 1, solder thickness required is set among the wafers and the spacers 12 are dipped into the solder melt 10, and the spacers 12 are plated with Ni in order to improve wettability with solder so as not to take in gases on the outside of the solder melt. A group of stacked silicon wafers is pulled up from the inside of the melt 10 together with the fixture 11, and formed to the laminate of the wafers 1.

5. 发明专利

JPH03257851A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03257851A
公开(公告)日：1991-11-18
申请号：JP5369490
申请日：1990-03-07
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： OKABE HIROYUKI , HIDAKA TOSHIYUKI , KAMIYA SHIGERU
IPC分类号： H01L23/48 , H01L23/28
摘要： PURPOSE:To improve strength of a strength lowered part to be caused in a synthetic resin case by making a wall thickness of the case ununiform while making a wall thickness of the strength lowered part thick. CONSTITUTION:Electrodes 3 are stuck to both sides of a semiconductor board 1 through a solder layer 2, further lead wires 4 are stuck through the second solder layers 5. Up to the lead wires, soldering is performed simultaneously through a solder furnace. Next, the surface of the semiconductor board is washed and a surface stabilizing agent 6 is applied and a cured half-finished product is inserted into a synthetic resin case 7 from one side lead wire for being set. Later, a liquid synthetic resin material 8 is inserted from an opening of the upper case for being set. By thickening the wall thickness of the strength lowered part in this structure having a disunified wall thickness of the synthetic resin case 7 so as to have an effect to improve the strength lowered part.

6. 发明专利

JPS56169346A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS56169346A
公开(公告)日：1981-12-26
申请号：JP7155480
申请日：1980-05-30
申请人： HITACHI LTD , HITACHI HARAMACHI DENSHI KOGYO
发明人： KAMIYA SHIGERU , HIDAKA TOSHIYUKI , TAKANO YUKIO
IPC分类号： H01L21/308 , H01L21/304 , H01L21/78
摘要： PURPOSE:To prevent the occurrence of a dislocation caused by a heat treatment in manufacturing steps by etching the surface of a crystalline plate cut from an ingot with an aqueous alkali solution to remove dislocation production source and heat treating it. CONSTITUTION:The surface of an Si substrate obtained by cutting from an ingot is etched and polished in a thickness of 0.5-3mum with 20-60% aqueous solution of KOH. A dislocation caused from a cut strain layer during the manufacturing steps of a semiconductor device can be suppressed by this treatment, and the secondary warp of the substrate can also be reduced.

7. 发明专利

JPH01191426A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH01191426A
公开(公告)日：1989-08-01
申请号：JP1446188
申请日：1988-01-27
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： TANAKA MINORU , KAMIYA SHIGERU , SAKAGAMI TADASHI
IPC分类号： H01L21/308
摘要： PURPOSE:To decrease the etching amount of molybdenum, to increase the etching amount of silicon and to perform smooth etching by making an etchant for etching an assembly secured with molybdenum electrodes of a mixture of hydrofluoric acid, nitric acid and phosphoric acid at a specific ratio. CONSTITUTION:An etchant containing, by vol.%, 26-35% of hydrofluoric acid, 30-40% of nitric acid and 30-39% of phosphoric acid is employed for etching. When a semiconductor device is etched with the etchant, it is confirmed that the etching speeds of molybdenum is 0.3-0.65mum/sec, and of silicon is 0.31-0.69mum/sec, an irregularity in reverse voltage blocking characteristic of the characteristics of an ultrahigh pressure resistant semiconductor device is reduced, and a leakage current can be stabilized to 1muA or less.

8. 发明专利

JPS57183061A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS57183061A
公开(公告)日：1982-11-11
申请号：JP6814081
申请日：1981-05-08
申请人： HITACHI LTD , HITACHI HARAMACHI DENSHI KOGYO
发明人： KAMIYA SHIGERU , HIDAKA TOSHIYUKI , ISHIZUKA TAKESHI
IPC分类号： H01L21/52 , H01L23/29 , H01L23/31 , H01L23/48 , H01L25/07
摘要： PURPOSE:To facilitate the winding and sintering of glass slurry, and to make a semiconductor deivce of higher dielectric strength and smaller size, by dividing a laminate into several groups and placing intermediate electrodes in the laminate divisions, when silicon pellets are laminated in multiple and sealed around them with glass. CONSTITUTION:A plurality of laminated silicon pellets are divided into 12aa- 12an, 12bb-12bn and 12ca-12cn. Next, one electrode 14a is mounted to the first group pellet 12aa through a semiconductor spacer 13aa without P-N junction. An intermeidate electrode 14c is mounted to the pellet 12an through a similar spacer 13ab. Similarly, the second group pellts 12bb-12bn are provided between intermediate electrodes 14c and 14d. The third group pellets 12ca-12cn are provided between an intermediate electrode 14d and the other electrode 14b. Afterwards, leads 16a and 16b are attached to the electrodes 14a and 14b respectively. The whole device is sealed with glass 15.

9. 发明专利

JPS62268152A SEMICONDUCTOR DEVICE FOR IGNITER 失效
公开(公告)号：JPS62268152A
公开(公告)日：1987-11-20
申请号：JP11077786
申请日：1986-05-16
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： KAMIYA SHIGERU , KOMINE MITSURU , YOSHINO KATSUNOBU
IPC分类号： H01L25/07 , F02P3/04 , F02P15/00
摘要： PURPOSE:To improve the degree of freedom in the case of packaging to an engine by connecting diodes fitted between two pairs of ignition plugs in antiparallel, using secondary side terminal sides as common terminals, and molding the diodes with an insulating resin. CONSTITUTION:A primary side midpoint E is connected to a power supply, and the series circuits of diodes 31-34 and ignition plugs 41-44 are each connected in antiparallel between a pair of terminals on the secondary side of a coil 1 and ground potential at every two. High voltage where polarity is inverted in succession is induced on the secondary side of the coil 1 by alternately switching switches 21 and 22 in a distributor-less-ignition-system. When high voltage having polarity shown in the figure is generated on the secondary side of the coil 1, discharge currents flow through the diode 31, the plug 41, the plug 44 and the diode 34, spark discharge is generated in the plugs 41 and 44, and the diodes 32 and 33 are reverse-biassed, and prevent high voltage. Accordingly, a semiconductor device has general-purpose properties because it may be used in response to the necessity of the ignition system regardless of the kinds of internal combustion engines.

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