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    • 1. 发明专利
    • SEMICONDUCTOR DEVICE FOR IGNITER
    • JPS62268152A
    • 1987-11-20
    • JP11077786
    • 1986-05-16
    • HITACHI LTDHITACHI HARAMACHI SEMI CONDUCT
    • KAMIYA SHIGERUKOMINE MITSURUYOSHINO KATSUNOBU
    • H01L25/07F02P3/04F02P15/00
    • PURPOSE:To improve the degree of freedom in the case of packaging to an engine by connecting diodes fitted between two pairs of ignition plugs in antiparallel, using secondary side terminal sides as common terminals, and molding the diodes with an insulating resin. CONSTITUTION:A primary side midpoint E is connected to a power supply, and the series circuits of diodes 31-34 and ignition plugs 41-44 are each connected in antiparallel between a pair of terminals on the secondary side of a coil 1 and ground potential at every two. High voltage where polarity is inverted in succession is induced on the secondary side of the coil 1 by alternately switching switches 21 and 22 in a distributor-less-ignition-system. When high voltage having polarity shown in the figure is generated on the secondary side of the coil 1, discharge currents flow through the diode 31, the plug 41, the plug 44 and the diode 34, spark discharge is generated in the plugs 41 and 44, and the diodes 32 and 33 are reverse-biassed, and prevent high voltage. Accordingly, a semiconductor device has general-purpose properties because it may be used in response to the necessity of the ignition system regardless of the kinds of internal combustion engines.
    • 3. 发明专利
    • HIGH VOLTAGE SEMICONDUCTOR DEVICE
    • JPH01166548A
    • 1989-06-30
    • JP32405387
    • 1987-12-23
    • HITACHI LTD
    • KOMINE MITSURUSUZUKI KENSUKE
    • H01L25/07
    • PURPOSE:To reduce air bubbles generated at the time of soldering and to uniformize the thickness of a solder by depositing a low temperature solder on both side faces of a silicon wafer, alternately laminating the wafer attached with the low temperature solder and a high temperature solder, and soldering them. CONSTITUTION:Low temperature solders 3 are deposited on both side faces of a silicon wafer 1 having an Ni-plated (at 2) P-N junction 2, the wafer 1 attached with the solders 3 and high temperature solder 4 are alternately laminated by equalizing the polarities of the P-N junction, sufficient load is applied, and soldered at a temperature for melting the solders 3. Then, the junctioned wafer 6 is cut in a suitable size for use as a semiconductor device, thereby forming silicon laminated pellets 7. Thus, air bubbles generated at the time of soldering are discharged, reduced, the solder 4 performs as the role of a spacer, thereby maintaining the uniformity of the thickness of the solder.
    • 4. 发明专利
    • GUIDE BEARING DEVICE FOR VERTICAL SHAFT ROTARY ELECTRIC MACHINE
    • JPS57148550A
    • 1982-09-13
    • JP3135181
    • 1981-03-06
    • HITACHI LTD
    • MASUKO MITSUOKOMINE MITSURU
    • H02K5/167
    • PURPOSE:To eliminate the leakage of oil with a simple sealng structure at the guide bearing device for a vertical shaft rotary electic machine by providing special relationships among the outer diameters of an inner plate in an oil tank, of the shaft end flange of a rotational shaft and the inner diameter of a bottom plate of the tank. CONSTITUTION:There are provided an oil tank formed to surround a rotational shaft 1 and a guide bearing shoe 3 sliding with the journal 2 of the shaft 1, and lubricating oil is contained in the oil tank. The oil tank for the guide bearing device is formed of a bracket 4 mouned with the shoe 3, an inner plate 5 of the tank provided along the shaft 1, and a bottom plate 6 of the tank for connecting the bracket 4 to the plate 5. The outer diameter D4 of the plate 5 is formed smaller than the inner diameter D2 of the bracket 4 and larger than the outer diameter D1 of the shaft end flange 11 of the shaft 1, and the inner diameter D3 of the plate 6 is formed at a value larger than the outer diameter D1 of the flange 11.
    • 7. 发明专利
    • PLASTIC MOLDED SEMICONDUCTOR DEVICE
    • JPH0334451A
    • 1991-02-14
    • JP16667989
    • 1989-06-30
    • HITACHI LTD
    • KAMIJO HITOSHINAKAJIMA YOICHISUZUKI KENSUKEKOMINE MITSURU
    • H01L25/07H01L21/52
    • PURPOSE:To relax stress in a semiconductor device to obtain a highly reliable semiconductor device resistant against mechanical and thermal stress by a method wherein thickness of second brazing filler metal for adhering both ends of a laminated chip and lead members is made thicker than that of first brazing filler metal for adhering semiconductor chips in the laminated chip. CONSTITUTION:Numerous semiconductor chips 1 are brazed by first brazing filler metal 2 to form a laminated chip 6 wherein the thickness of the first brazing filler metal 2 is 55mum. Lead members 4 are adhered to both ends of the laminated chip 6 via second brazing filler metal 3. The second brazing filler metal 3 is used to braze the laminated chip 6 and the lead members 4 at such temperature that the second brazing filler metal 3 is melted but the first brazing filler metal 3 is not melted. The thickness of the second brazing filler metal is 100mum. In addition end faces of the semiconductor chips 1 are coated by a surface protecting material 7 for stabilizing PN junction face ex posed on them and the external face is further enclosure-molded by a plastic coat 5.
    • 8. 发明专利
    • Semiconductor device
    • 半导体器件
    • JPS61134052A
    • 1986-06-21
    • JP25563884
    • 1984-12-05
    • Hitachi Haramachi Semiconductor LtdHitachi Ltd
    • TANAKA MINORUKAMIYA SHIGERUKOMINE MITSURUHIDAKA TOSHIYUKIYOSHINO KATSUNOBU
    • H01L23/31H01L25/07
    • H01L25/074H01L23/3107H01L24/33H01L2924/10253H01L2924/00
    • PURPOSE:To obtain the TV high-voltage diode which avoids field concentration and increases breakdown strength by a method wherein a high-voltage diode is composed of block pellets increased in curvature at the corners. CONSTITUTION:Semiconductor block pellets 1 with Si pellets 1a, 1b,...1n etched at corners so as to have suitable curvatures and joined by adhesion with solders 4 and Si pellets 5a, 5b of low resistivity at both ends are arranged. Further, electrodes 2a, 2b to which outer leads 3a, 3b are welded in percussion are adhered to both ends of the block pellet. The diagram shows a structure calcined by being covered with glass from one electrode 2a to the other electrode 2b. Comparison of the cross-sectional shapes of the Si pellets 1a, 1b...1n with the conventional ones proves that the curvature of Si pellet corners is larger than conventional.
    • 目的:获得避免场浓度的电视高压二极管,通过高压二极管由拐角处的曲率增加的块状丸粒组成的方法获得提高击穿强度。 构成:在角部蚀刻具有Si粒子1a,1b,... 1n的半导体块状粒料1,以具有合适的曲率并通过与焊料4的粘合和两端的低电阻率的Si粒子5a,5b接合。 此外,将外部引线3a,3b以冲击方式焊接的电极2a,2b粘附到块状块的两端。 该图示出了通过被玻璃从一个电极2a覆盖到另一个电极2b而煅烧的结构。 Si颗粒1a,1b ... 1n的横截面形状与常规的横截面形状的比较证明了Si颗粒角的曲率大于常规。