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1. 发明专利

JPS5917276A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS5917276A
公开(公告)日：1984-01-28
申请号：JP12724882
申请日：1982-07-20
申请人： Hitachi Haramachi Semiconductor Ltd , Hitachi Ltd
发明人： KAMIYA SHIGERU , OOTAKE NAGAO , SHIMA KENZOU
IPC分类号： H01L25/07
CPC分类号： H01L25/074 , H01L2924/0002 , H01L2924/00
摘要： PURPOSE:To offer the semiconductor device excluded with conduction noise, avalanche noise and moreover, easy to manufacture by a method wherein the device is constructed of semiconductor pellets of the plural sheets having P-N junctions and to perform high-frequency action and laminated between a pair of electrodes arranging the rectifying directions thereof, and a high resistor consisting of a semiconductor interposed between the electrodes adjoining to the cathode side thereof. CONSTITUTION:Depletion layers are formed though a little in P-N junctions of the respective silicon pellets 4a-4n to make junction capacitances to exist, and when a voltage is applied, and junction capacitances are charged to reach conduction, a time constant expressed by the product of junction capacitance and resistance is enlarged because of interposition of the high resistor 6, and forward recovery time is elongated. Accordingly, the current rise rate di/dt at forward recovery time is reduced, a counter electromotive voltage is reduced, and conduction noise is not generated. Moreover, when a reversely directional voltage is applied, the avalanches are generated locally in the silicon pellets 4a-4n on the anode side because of ununiformity of the alloted voltage rate, and even when pulse noise is generated, because the peak value thereof is limited by the high resistor 6, it is not transmitted to a Braun tube as avalanche noise.
摘要翻译：目的：提供排除导电噪声，雪崩噪声的半导体器件，此外，通过一种方法容易制造，其中器件由具有PN结的多个片的半导体芯片构成，并且执行高频作用并且层叠在一对之间设置排列其整流方向的电极以及插入在与其阴极侧相邻的电极之间的半导体构成的高电阻。构成：在各个硅片4a-4n的PN结中形成消耗层，以形成结电容，并且当施加电压并且结电容被充电以达到传导时，由产品表示的时间常数的结电容和电阻由于插入高电阻6而被扩大，并且正向恢复时间延长。因此，正向恢复时的电流上升率di / dt降低，反电动势降低，不产生传导噪声。此外，当施加反方向电压时，由于分压电压率的不均匀性，即使产生脉冲噪声，由于其峰值受限制，因此在阳极侧的硅片4a-4n中局部产生雪崩通过高电阻6，其不会作为雪崩噪声传输到布朗管。

2. 发明专利

JPS5759370A High voltage semiconductor device 失效
标题翻译：高电压半导体器件
公开(公告)号：JPS5759370A
公开(公告)日：1982-04-09
申请号：JP13429080
申请日：1980-09-29
申请人： Hitachi Haramachi Semiconductor Ltd , Hitachi Ltd
发明人： KAMIYA SHIGERU , SHIMA KENZOU , HIDAKA TOSHIYUKI
IPC分类号： H01L29/73 , H01L21/331 , H01L25/07
CPC分类号： H01L25/074 , H01L24/01
摘要： PURPOSE:To obtain a device characterized by low noises, high breakdown strength, and small high temperature leakage currents, by using semiconductor elements in which gold is doped on parts adjacent to both elelctrodes, and using semiconductor elements in which platinum is doped on the other part. CONSTITUTION:A plurality of the semiconductor elements 3 and 4 having P-N junction are layered between a pair of electrodes 1a and 1b so as to form a series connection, and bonded in a rod shape with a brazing material. The semiconductor elements 3a and 3b wherein gold is doped as life time killer metal and which has the breakdown strength higher than the voltages shared by the semiconductor elements when reverse voltage are applied are arranged at the parts adjacent to both electrodes 1a and 1b. The semiconductor elements 4 in which platinum is doped is arranged on the other part. In this constitution, the breakdown strength is made higher by the elements 4, the high termperature leaking currents become small, restoring time becomes long due to the elements 3a and 3b, and the noises can be prevented.
摘要翻译：目的：通过使用在两个电极附近的部分上掺杂金的半导体元件，并使用其中铂掺杂的半导体元件，获得具有低噪声，高击穿强度和小的高温漏电流的器件部分。构成：将多个具有P-N结的半导体元件3和4层叠在一对电极1a和1b之间，以形成串联连接，并用钎焊材料将其接合成棒状。其中金被掺杂为寿命终止金属并且当施加反向电压时具有高于由半导体元件共有的电压的击穿强度的半导体元件3a和3b布置在与两个电极1a和1b相邻的部分。其中掺杂有铂的半导体元件4布置在另一部分上。在这种结构中，元件4，高温漏电流变小，由于元件3a和3b而导致恢复时间变长，因此能够防止噪声，从而使击穿强度更高。

3. 发明专利

JPS60218865A ELECTRONIC PARTS 失效
公开(公告)号：JPS60218865A
公开(公告)日：1985-11-01
申请号：JP7560384
申请日：1984-04-13
申请人： HITACHI LTD , HITACHI HARAMACHI DENSHI KOGYO
发明人： TANAKA MINORU , SHIMA KENZOU , HIDAKA TOSHIYUKI , TOIDA HIROTOSHI
IPC分类号： H01L23/48 , H01L23/051 , H01L23/49
摘要： PURPOSE:To provide excellent thermal conductivity and electric conductivity of a lead, to provide sufficiently high hardness and to avoid the change in hardness even though heat history is received, by forming the lead material of an electronic part, in which semiconductor pellet is sealed, by copper alloy wire including chromium. CONSTITUTION:In a glass molded diode, a silicon pellet 1 having a P-N junction is held and fixed to an electrode 2 made of molybdenum or tungsten through aluminum solder 3. A copper alloy lead 4 is welded to the electrode 2. The pellet 1 is sealed by a glass 5. The lead 4 is constituted by the copper alloy comprising 0.5-1.5wt% chromium and copper for the remaining part. When the chromium is less than 0.5wt%, the required hardness is not obtained when a heat history is received and annealing is performed. When the chromium is more than 1.5wt%, the electric conductivity and the thermal conductivity become lower than those of copper. Therefore the part is not practical.

4. 发明专利

JPS5391587A HIGHHDIELECTRIC SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5391587A
公开(公告)日：1978-08-11
申请号：JP585777
申请日：1977-01-24
申请人： HITACHI LTD
发明人： SHIMA KENZOU , TAKAHASHI MASAO , ISHIZUKA TAKESHI
IPC分类号： H01L29/74
摘要： PURPOSE:To obtain the high-dielectric semiconductor device which is stable in terms of yield and has the high surge dielectric strength by laminating and adhering the semiconductor pellet of 90 deg. in bevel angle through neutron irradiation.

5. 发明专利

JPS572560A HIGH VOLTAGE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS572560A
公开(公告)日：1982-01-07
申请号：JP7563380
申请日：1980-06-06
申请人： HITACHI LTD
发明人： HIDAKA TOSHIYUKI , SHIMA KENZOU , ISHIZUKA TAKESHI
IPC分类号： H01L23/48 , H01L25/07
摘要： PURPOSE:To obtain a semiconductor device having arbitrary bidirectional avalanche characteristics by so connecting two sets of a plurality of p-n junction semiconductor pellets that the rectifying direction become reverse. CONSTITUTION:Two groups 1a, 1b of silicon pellets 1 having p-n junctions and laminated and bonded simultaneously in the same rectifying direction are prepared, and are bonded in such a manner that the rectifying directions of the groups 1a, 1b are reverse. Thus, arbitrary avalanche characteristic can be obtaind bidirectionally with the number of the groups.

6. 发明专利

JPS56104463A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS56104463A
公开(公告)日：1981-08-20
申请号：JP577580
申请日：1980-01-23
申请人： HITACHI LTD , HITACHI HARAMACHI DENSHI KOGYO
发明人： YAMADA MASAHIKO , SHIMA KENZOU , SUZUKI KENSUKE , MATSUZAKI MITSUSACHI
IPC分类号： H01L21/60 , H01L21/28 , H01L23/051 , H01L29/43
摘要： PURPOSE:To improve the reliability of the glass sleeve type semiconductor device by setting the hardness of the electrode film at a suitable value and adequately providing the pressing pressure to a semiconductor chip. CONSTITUTION:In the glass sleeve type semiconductor device having a semiconductor chip 1 formed of a semiconductor 6 having a P-N junction, a metallic electrode 5 formed at least on one main surface and other metallic electrode film 7, a pair of external lead electrodes 2 provided at both ends of the chip 1, lead wires 4 integrally welded to the electrodes 2, and a glass sleeve 3 fused around the electrode 2, the Vickers hardness of the metallic electrodes on the chip 6 is set at 20-50. Thus, it prevents the trouble due to the thermal expansion coefficient difference between the chip and the sleeve, and improves the reliability of the device without modifying the conventional manufacturing method.

7. 发明专利

JPS58151069A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS58151069A
公开(公告)日：1983-09-08
申请号：JP3236682
申请日：1982-03-03
申请人： HITACHI LTD
发明人： TOIDA HIROTOSHI , SHIMA KENZOU , SUZUKI KENSUKE , MATSUZAKI MITSUSACHI
IPC分类号： H01L21/322 , H01L29/167 , H01L29/861 , H01L29/868
摘要： PURPOSE:To obtain a device which has good characteristic of forward and reverse directions and is enabled to operate at a medium speed, by diffusing Pt in a specific thickness into the I-layer of Si having a specific resistance and thickness. CONSTITUTION:An Si pellet 11 has a PIN structure, and the I-layer 11a at the center is N type, which has the specific resistance of 40-80cm and the thickness of 120-180mum. Pt is diffused into the entire body of the pellet 11 in 2X10 - 2X10 /cm at 780-900 deg.C. Mo electrodes 14 and 15 are added on the both sides of the pellet 11 by Al solder 12 and 13, then Cu leads 16 and 17 are welded, and the periphery is sealed by the glass 18 of ZnO-B2O5-SiO2. This diode has less loss of heat generation, and is sufficiently endurable to use even when sealed by glass, high in withstand voltage and low in forward voltage drop, and the forward-reverse recovery characteristic is good. The P and N layers of the pellet are not specified here particularly, but since the fluctuation of the specific resistances and thicknesses of the both layers hardly give adverse influences on these characteristics, they can be arbitrarily selected.

8. 发明专利

JPS53114354A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS53114354A
公开(公告)日：1978-10-05
申请号：JP3108178
申请日：1978-03-20
申请人： HITACHI LTD
发明人： SHIMA KENZOU , HIRAYAMA HIDEO , HASHIMOTO TOSHIHIKO
IPC分类号： H05K5/00 , H01L23/16 , H01L23/29 , H01L23/31 , H05K5/06
摘要： PURPOSE:To obtain easily the excellently heat radiative device whose thermal expansion coefficient approximates to that of an elemnt, by providing a glass fiber group axially to the circumference of the element with one pair of lead lines extending coaxially and by sealing it by the resin with a charging material.

9. 发明专利

JPS5323272A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5323272A
公开(公告)日：1978-03-03
申请号：JP9699776
申请日：1976-08-16
申请人： HITACHI LTD
发明人： HIDAKA TOSHIYUKI , SHIMA KENZOU
IPC分类号： H01L25/07 , H01L23/00 , H01L23/02 , H01L23/29 , H01L23/31 , H01L23/48
摘要： PURPOSE:To make a highly performance electrode lead giving no thermal distortion to semiconductor by welding electrode of W or Mo to the Ni-Co-Mn alloy wire of copper covering.

10. 发明专利

JPS5269577A COMPOSITE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5269577A
公开(公告)日：1977-06-09
申请号：JP14509875
申请日：1975-12-08
申请人： HITACHI LTD
发明人： SHIMA KENZOU
IPC分类号： H05K7/20 , H01L23/02 , H01L23/34 , H01L23/46 , H01L25/07
摘要： PURPOSE:The hollw cooling body is mounted into resin formation body which molds unit commutator element connected mutually. In this method, a composite semiconductor device which can increase the heat discharge effect suitable for high voltage diode used for electronic range, etc. can be obtained.

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