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1. 发明专利

JPS62268152A SEMICONDUCTOR DEVICE FOR IGNITER 失效
公开(公告)号：JPS62268152A
公开(公告)日：1987-11-20
申请号：JP11077786
申请日：1986-05-16
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： KAMIYA SHIGERU , KOMINE MITSURU , YOSHINO KATSUNOBU
IPC分类号： H01L25/07 , F02P3/04 , F02P15/00
摘要： PURPOSE:To improve the degree of freedom in the case of packaging to an engine by connecting diodes fitted between two pairs of ignition plugs in antiparallel, using secondary side terminal sides as common terminals, and molding the diodes with an insulating resin. CONSTITUTION:A primary side midpoint E is connected to a power supply, and the series circuits of diodes 31-34 and ignition plugs 41-44 are each connected in antiparallel between a pair of terminals on the secondary side of a coil 1 and ground potential at every two. High voltage where polarity is inverted in succession is induced on the secondary side of the coil 1 by alternately switching switches 21 and 22 in a distributor-less-ignition-system. When high voltage having polarity shown in the figure is generated on the secondary side of the coil 1, discharge currents flow through the diode 31, the plug 41, the plug 44 and the diode 34, spark discharge is generated in the plugs 41 and 44, and the diodes 32 and 33 are reverse-biassed, and prevent high voltage. Accordingly, a semiconductor device has general-purpose properties because it may be used in response to the necessity of the ignition system regardless of the kinds of internal combustion engines.

2. 发明专利

JPH1167759A MANUFACTURE OF SEMICONDUCTOR SUBSTRATE WITH HIGH BREAKDOWN VOLTAGE 失效
公开(公告)号：JPH1167759A
公开(公告)日：1999-03-09
申请号：JP22774997
申请日：1997-08-25
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： FUKUI SHOICHI , TSURUOKA MASAO , MURAKAMI SUSUMU , TAKAHASHI KIKUO , YOSHINO KATSUNOBU
IPC分类号： H01L23/29 , H01L21/31 , H01L21/316 , H01L21/329 , H01L21/677 , H01L21/68 , H01L23/31
摘要： PROBLEM TO BE SOLVED: To reduce leak current with high reverse voltage applied by first forming a silicon dioxide film while applying ultraviolet rays onto a pn junction surface and thereafter sealing the silicon dioxide film and a second film adjacent to the silicon dioxide film using a molding resin. SOLUTION: Far ultraviolet rays are applied onto a semiconductor surface to form a silicon dioxide film 4 that becomes a first passivation film. Then, a second passivation film 5 is formed by covering the film 4 and first solder portions 12 and 13. Further, a molding resin 6 serving also as a package is formed by covering the film 5, an anode electrode 22 and a cathode electrode 23. A polyimide resin 5 of which the film 5 is made is applied, and cured in an atmosphere of nitrogen at temperatures ranging from 150 to 250 deg.C. As the final step, an epoxy resin 6 is formed by a transfer molding method, and the resin 6 is after-cured in the atmosphere of nitrogen at a temperature lower than the temperature for curing the film 5.

3. 发明专利

JPS6332943A MANUFACTURE OF RESIN-MOLDED SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6332943A
公开(公告)日：1988-02-12
申请号：JP17562086
申请日：1986-07-28
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： SUDO KATSUHIKO , HIDAKA TOSHIYUKI , YOSHINO KATSUNOBU , MONMA NOBUO , MONMA MASATO , KAMIJO HITOSHI
IPC分类号： H01L21/56
摘要： PURPOSE:To reduce the number of steps of heating and curing a silicone surface protecting agent and epoxy resin by simultaneously heating and curing the agent and the resin. CONSTITUTION:The silicon pellet 1 of a subassembly having header leads 4 brazed by a solder 4 on both sides of the pellet 1 is coated with silicone resin 6. Then, this subassembly is set in a metal mold for transfer molding it, epoxy resin is poured in the mold under a predetermined pressure to provide an epoxy resin layer of predetermined shape. The silicon resin and the epoxy resin are eventually heated and cured simultaneously. Thus, the number of steps of heating and curing is reduced, and it can prevent reverse leakage current characteristic from being deteriorated.

4. 发明专利

JPS5125423A 失效
公开(公告)号：JPS5125423A
公开(公告)日：1976-03-02
申请号：JP9986074
申请日：1974-08-28
申请人： HITACHI LTD
发明人： YOSHINO KATSUNOBU , HAMANO ATSUSHI , FUJII MASARU
IPC分类号： B22C1/00

5. 发明专利

JPS5233477A MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5233477A
公开(公告)日：1977-03-14
申请号：JP10892475
申请日：1975-09-10
申请人： HITACHI LTD
发明人： MATSUZAKI MITSUSACHI , ISHIZUKA TAKESHI , YOSHINO KATSUNOBU
IPC分类号： H01L21/322 , H01L21/22 , H01L29/74 , H01L29/861
摘要： PURPOSE:To obtain semiconductor devices which have durability to high pressure and high production yield by dividing plural number of substrates into a plural number of segmentsaccording to their resistivity so that the life time killer is diffused with different density on each segment.

6. 发明专利

JP2007012952A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2007012952A
公开(公告)日：2007-01-18
申请号：JP2005193295
申请日：2005-07-01
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MURAKAMI SUSUMU , YOSHINO KATSUNOBU , SUGANO MINORU , KOKUUCHI SHIGERU , KOBAYASHI SATSUKI , TERAJIMA KENJI
IPC分类号： H01L29/861
摘要： PROBLEM TO BE SOLVED: To reduce a leakage current of a semiconductor device which is equipped with a pn junction exposed on the side of a semiconductor substrate and to enhance its wthstand voltage.
SOLUTION: The semiconductor device is equipped with a semiconductor substrate provided with two main surfaces each having a (111) crystal plane and two or more side faces which have six planes equivalent to the planes of plane orientations (1, -2, 1), a second conductivity-type second semiconductor region of high-impurity concentration which is formed extending from one of the main surfaces into the inside of a first conductivity-type first semiconductor region of low-impurity concentration, a first conductivity-type third semiconductor region which is formed extending from the other main surface into the inside of the first semiconductor region, a first electrode ohmically connected to one of the main surface, and a second electrode ohmically connected to the other main surface. A joint between the second semiconductor region and the first semiconductor region is exposed on the side face.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了减少配备有暴露在半导体衬底一侧的pn结的半导体器件的漏电流并提高其电压。解决方案：半导体器件配备有具有两个主表面的半导体衬底，每个主表面具有（111）晶面和两个或更多个侧面，其具有与平面取向（1， 1），从杂质浓度低的第一导电型第一半导体区域的一个主表面延伸形成的高杂质浓度的第二导电型第二半导体区域，第一导电型第三半导体区域半导体区域，其从另一个主表面延伸到第一半导体区域的内部;第一电极，其欧姆连接到主表面之一;以及第二电极，其与另一主表面欧姆连接。第二半导体区域和第一半导体区域之间的接合部在侧面露出。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JPS51116680A SEMICONDUCTOR DEVICE AND ITS MANUMACTURING METHOD 失效
公开(公告)号：JPS51116680A
公开(公告)日：1976-10-14
申请号：JP4128975
申请日：1975-04-07
申请人： HITACHI LTD
发明人： YOSHINO KATSUNOBU , HAMANO ATSUSHI , WATANABE TAKASHI
IPC分类号： H01L25/10 , H01L23/28
摘要： PURPOSE:To avoid the occurrence of a void in a resin included semiconductor by protruding a resin layer at one end of the case, and by employing a molding method in which resin can be supplied for the one decreased by volume contraction.

8. 发明专利

JPS62130530A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62130530A
公开(公告)日：1987-06-12
申请号：JP26935485
申请日：1985-12-02
申请人： HITACHI LTD
发明人： HIDAKA TOSHIYUKI , KAMIJO HITOSHI , YOSHINO KATSUNOBU , MONMA NOBUO
IPC分类号： H01L21/56
摘要： PURPOSE:To prevent generation of voids in the sealing layer by displacing the dropping position of mold material for subassembly to both sides from the center where the pellet exists and winding the molding material at the two positions. CONSTITUTION:The dropping position of mold material M for the subassembly 10 holding a pallet 1 between the electrode materials having a header 2a and a flanges 2b is selected between the header 2a and flange 2b. The mold material M is wound by the subassembly 10 due to rotation of subassembly 10 and dropping of mold material M in the specified amount is terminated. When rotation is continued, the sealing layer 4 of almost spherical form is molded by the swaying ability and centrifugal force of mold material M. As the mold material M, the epoxy resin having the epoxy group in the molecule including organic dibasic acid dihydrazide and imidazole compound may be used. According to this structure, a highly reliable device can be obtained by suppressing generation of voids in the sealing layer.

9. 发明专利

JPS61134052A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS61134052A
公开(公告)日：1986-06-21
申请号：JP25563884
申请日：1984-12-05
申请人： Hitachi Haramachi Semiconductor Ltd , Hitachi Ltd
发明人： TANAKA MINORU , KAMIYA SHIGERU , KOMINE MITSURU , HIDAKA TOSHIYUKI , YOSHINO KATSUNOBU
IPC分类号： H01L23/31 , H01L25/07
CPC分类号： H01L25/074 , H01L23/3107 , H01L24/33 , H01L2924/10253 , H01L2924/00
摘要： PURPOSE:To obtain the TV high-voltage diode which avoids field concentration and increases breakdown strength by a method wherein a high-voltage diode is composed of block pellets increased in curvature at the corners. CONSTITUTION:Semiconductor block pellets 1 with Si pellets 1a, 1b,...1n etched at corners so as to have suitable curvatures and joined by adhesion with solders 4 and Si pellets 5a, 5b of low resistivity at both ends are arranged. Further, electrodes 2a, 2b to which outer leads 3a, 3b are welded in percussion are adhered to both ends of the block pellet. The diagram shows a structure calcined by being covered with glass from one electrode 2a to the other electrode 2b. Comparison of the cross-sectional shapes of the Si pellets 1a, 1b...1n with the conventional ones proves that the curvature of Si pellet corners is larger than conventional.
摘要翻译：目的：获得避免场浓度的电视高压二极管，通过高压二极管由拐角处的曲率增加的块状丸粒组成的方法获得提高击穿强度。构成：在角部蚀刻具有Si粒子1a，1b，... 1n的半导体块状粒料1，以具有合适的曲率并通过与焊料4的粘合和两端的低电阻率的Si粒子5a，5b接合。此外，将外部引线3a，3b以冲击方式焊接的电极2a，2b粘附到块状块的两端。该图示出了通过被玻璃从一个电极2a覆盖到另一个电极2b而煅烧的结构。 Si颗粒1a，1b ... 1n的横截面形状与常规的横截面形状的比较证明了Si颗粒角的曲率大于常规。

10. 发明专利

JPS56137644A MANUFACTURE OF GLASS-SEALED TYPE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS56137644A
公开(公告)日：1981-10-27
申请号：JP4033280
申请日：1980-03-31
申请人： HITACHI LTD
发明人： MATSUZAKI MITSUSACHI , SUZUKI KENSUKE , YOSHINO KATSUNOBU
IPC分类号： H01L21/52 , H01L21/58 , H01L23/29 , H01L23/31
摘要： PURPOSE:To obtain a glass-sealed type device which withstands a pressure with less forward voltage drop by laminating silicon wafers through the intermediary of molybdenum particles, alloying the silicon with aluminum soldering material and cutting a block to a prearranged size. CONSTITUTION:After P and N diffusion on N type silicon substrate, the both main surfaces are subjected to aluminium evaporation. The polarity of wafers 52a, 52b is set in the same direction and they are laminated through the intermediary of molybdenum particles 51. Following this process, the silicon is alloyed with aluminium soldering materials 23a, 23b at approximately 700 deg.C. A block thus formed is clad with an iron sheet mask, sand-blasted, cut and then is made into block pellets 61. With the use of molybdenum particles, a heat stress caused by a differential in coefficient of thermal expansion between silicon and molybdenum is insignificant. Therefore, the wafer does not have cracks. In addition, P type inversion layer is generated around the molybdenum particles, causing P type inversion layer on the N layer to be ununiform, so that a forward voltage drop is reduced. Finally a molybdenum electrode lead is fixed on the main surface of the pellet 61 with aluminium soldering materials 23a, 23b to be finished with glass sealing.

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