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1. 发明授权

US08854731B2 Carbon dioxide laser light optical component 有权
标题翻译：二氧化碳激光光学元件
公开(公告)号：US08854731B2
公开(公告)日：2014-10-07
申请号：US13090989
申请日：2011-04-20
申请人： Hisao Kikuta , Kenichi Kurisu , Keiji Ebata
发明人： Hisao Kikuta , Kenichi Kurisu , Keiji Ebata
IPC分类号： G02B5/30 , G02B27/28 , G02B27/42 , B23K26/06 , G02B1/11 , G02B5/18
CPC分类号： G02B5/1809 , B23K26/064 , G02B1/115 , G02B5/1819 , G02B27/4261 , G02B27/4272
摘要： At least one surface of a plate member made of ZnSe has a concave-and-convex structure in which a projecting section and a groove section are formed at a spatial cycle equal to or lower than the wavelength of carbon dioxide laser light to thereby provide a substrate body. On a surface of the concave-and-convex structure, an antireflection film is layered that has a lower refractive index than that of ZnSe to carbon dioxide laser light. By this configuration, the polarization state of transmitted carbon dioxide laser light is converted from a linear polarization to a circular polarization or the like.
摘要翻译：由ZnSe制成的板构件的至少一个表面具有凹凸结构，其中以等于或低于二氧化碳激光的波长的空间周期形成突出部分和沟槽部分，从而提供基体。在凹凸结构的表面上，将具有比ZnSe折射率低的折射率的抗反射膜层叠成二氧化碳激光。通过这种结构，透射的二氧化碳激光的偏振状态从线偏振转换为圆偏振等。

2. 发明申请

US20110235163A1 COMPOSITE PHOTONIC STRUCTURE ELEMENT, SURFACE EMITTING LASER USING THE COMPOSITE PHOTONIC STRUCTURE ELEMENT, WAVELENGTH CONVERSION ELEMENT, AND LASER PROCESSING DEVICE USING THE WAVELENGTH CONVERSION ELEMENT 审中-公开
标题翻译：使用复合光电结构元件，波长转换元件和使用波长转换元件的激光加工设备的复合光电结构元件，表面发射激光
公开(公告)号：US20110235163A1
公开(公告)日：2011-09-29
申请号：US12747824
申请日：2008-12-12
申请人： Hajime Ishihara , Satoshi Kuzuhara , Keiji Ebata , Kenichi Kurisu
发明人： Hajime Ishihara , Satoshi Kuzuhara , Keiji Ebata , Kenichi Kurisu
IPC分类号： G02F1/37
CPC分类号： G02F1/3775 , B82Y20/00 , G02F1/017 , G02F2202/32 , G02F2203/15
摘要： A composite photonic structure element comprises a photonic crystal and multilayer films. The photonic crystal is formed by alternately laminating a plurality of sets of an active layer having a nonlinear effect for converting a fundamental wave into a second harmonic and an inactive layer having no nonlinear effect, and is constructed such that the energy of the fundamental wave coincides with a photonic bandgap end. Each of the multilayer films is formed by laminating a plurality of sets of two kinds of thin films having different refractive indexes and reflects the fundamental wave. The multilayer films are connected to both ends of the photonic crystal. The fundamental wave enters one of end faces and is reciprocally reflected between resonators having the multilayer films, so that the intensity of the fundamental wave is enhanced within the photonic crystal. The fundamental wave is converted into a second harmonic in the active layer, and the second harmonic is taken out from the other end face.
摘要翻译：复合光子结构元件包括光子晶体和多层膜。光子晶体通过交替层叠多组有效层的组合而形成，所述有源层具有用于将基波转换为二次谐波的非线性效应和不具有非线性效应的非活性层，并且被构造为使得基波的能量重合带有光子带隙端。各多层膜通过层叠多组折射率不同的两种薄膜而形成，并反射基波。多层膜连接到光子晶体的两端。基波进入端面之一并且在具有多层膜的谐振器之间往复反射，使得在光子晶体内增强基波的强度。基波在有源层中转换成二次谐波，从另一端取出二次谐波。

3. 发明申请

US20110011831A1 METHOD FOR MANUFACTURING DIFFRACTIVE OPTICAL ELEMENT 有权
标题翻译：制造衍射光学元件的方法
公开(公告)号：US20110011831A1
公开(公告)日：2011-01-20
申请号：US12922647
申请日：2009-11-13
申请人： Kenichi Kurisu , Hideaki Imamura
发明人： Kenichi Kurisu , Hideaki Imamura
IPC分类号： C23F1/00
CPC分类号： G02B5/1857
摘要： There is provided a method for manufacturing a diffractive optical element that can suppress the generation of heat from the inside of an insulative substrate and stabilize an etching rate. A method for manufacturing a diffractive optical element composed of an insulative substrate whose surface has a bumpy structure includes a selecting step of selecting an insulative substrate having an electrical resistivity equal to or higher than a certain value by measuring electrical resistivity of insulative substrates; and an etching step of forming a bumpy structure by dry etching in a surface of the insulative substrate selected in the selecting step.
摘要翻译：提供了一种制造衍射光学元件的方法，该衍射光学元件可以抑制从绝缘衬底的内部产生热量并使蚀刻速率稳定。由表面具有颠簸结构的绝缘性基板构成的衍射光学元件的制造方法包括通过测定绝缘基板的电阻率来选择具有等于或大于某一值的电阻率的绝缘基板的选择步骤; 以及蚀刻步骤，通过在选择步骤中选择的绝缘性基板的表面上通过干蚀刻形成凹凸结构。

4. 发明授权

US07528073B2 Dry etching method and diffractive optical element 有权
$Dry etching method and diffractive optical element$
标题翻译：干蚀刻法和衍射光学元件
公开(公告)号：US07528073B2
公开(公告)日：2009-05-05
申请号：US11266407
申请日：2005-11-04
申请人： Kenichi Kurisu
发明人： Kenichi Kurisu
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： G02B5/1857
摘要： A dry etching method is provided, in which dry etching is performed in such a manner that a conductor to which an insulative substrate is attached is brought in electric, intimate contact with an electrode. In the dry etching method, the insulative substrate is attached to the conductor by means of a conductive grease. A diffractive optical element manufactured with the dry etching method is also provided.
摘要翻译：提供了一种干式蚀刻方法，其中以这样的方式进行干法蚀刻，使得与绝缘基板相连的导体与电极电气紧密接触。在干式蚀刻方法中，绝缘基板通过导电性油脂附着在导体上。还提供了使用干蚀刻方法制造的衍射光学元件。

5. 发明申请

US20060110925A1 Dry etching method and diffractive optical element 有权
$Dry etching method and diffractive optical element$
公开(公告)号：US20060110925A1
公开(公告)日：2006-05-25
申请号：US11266407
申请日：2005-11-04
申请人： Kenichi Kurisu
发明人： Kenichi Kurisu
IPC分类号： H01L21/461 , H01L21/302 , G02B5/18
CPC分类号： G02B5/1857
摘要： A dry etching method is provided, in which dry etching is performed in such a manner that a conductor to which an insulative substrate is attached is brought in electric, intimate contact with an electrode. In the dry etching method, the insulative substrate is attached to the conductor by means of a conductive grease. A diffractive optical element manufactured with the dry etching method is also provided.

6. 发明授权

US5192419A Method for producing a zinc selenide blue light emitting device 失效
标题翻译：生产锌锌蓝光发光装置的方法
公开(公告)号：US5192419A
公开(公告)日：1993-03-09
申请号：US765425
申请日：1991-09-25
申请人： Koichi Matsuura , Fuminori Takeda , Kenichi Kurisu
发明人： Koichi Matsuura , Fuminori Takeda , Kenichi Kurisu
IPC分类号： H01L21/208 , H01L21/368 , H01L33/28 , H01L33/40
CPC分类号： H01L33/28 , H01L21/02409 , H01L21/0256 , H01L21/02579 , H01L21/02628 , H01L33/0083
摘要： A p-type ZnSe bulk or film crystal of good quality has not been produced so far, although various improved methods based on MOCVD or MBE methods have been tried. Prior art required high pressure, high temperature or high vacuum to grow a p-type ZnSe crystal. This invention grows p-type ZnSe by an electrochemical deposition method. A zinc anode and a low-resistivity n-type ZnSe singlecrystalline substrate are immersed into a solution including zinc ions, selenium ions and acceptor ions. Direct current is sent from the zinc anode to the n-type ZnSe singlecrystalline substrate cathode. Selenium ions and zinc ions are attracted to the n-type ZnSe cathode. They are reduced and are deposited on the n-type ZnSe cathode. Deposited ZnSe film is a p-type semiconductor. A ZnSe semiconductor with a pn-junction is obtained.

7. 发明授权

US08404136B2 Method for manufacturing diffractive optical element 有权
$Method for manufacturing diffractive optical element$
标题翻译：衍射光学元件的制造方法
公开(公告)号：US08404136B2
公开(公告)日：2013-03-26
申请号：US12922647
申请日：2009-11-13
申请人： Kenichi Kurisu , Hideaki Imamura
发明人： Kenichi Kurisu , Hideaki Imamura
IPC分类号： C23F1/00 , B44C1/22
CPC分类号： G02B5/1857
摘要： There is provided a method for manufacturing a diffractive optical element that can suppress the generation of heat from the inside of an insulative substrate and stabilize an etching rate. A method for manufacturing a diffractive optical element composed of an insulative substrate whose surface has a bumpy structure includes a selecting step of selecting an insulative substrate having an electrical resistivity equal to or higher than a certain value by measuring electrical resistivity of insulative substrates; and an etching step of forming a bumpy structure by dry etching in a surface of the insulative substrate selected in the selecting step.
摘要翻译：提供了一种制造衍射光学元件的方法，该衍射光学元件可以抑制从绝缘衬底的内部产生热量并使蚀刻速率稳定。由表面具有颠簸结构的绝缘性基板构成的衍射光学元件的制造方法包括通过测定绝缘基板的电阻率来选择具有等于或大于某一值的电阻率的绝缘基板的选择步骤; 以及蚀刻步骤，通过在选择步骤中选择的绝缘性基板的表面上通过干蚀刻形成凹凸结构。

8. 发明授权

US06775066B2 Diffractive optical element 有权
$Diffractive optical element$
标题翻译：衍射光学元件
公开(公告)号：US06775066B2
公开(公告)日：2004-08-10
申请号：US10051023
申请日：2002-01-22
申请人： Kenichi Kurisu , Keiji Fuse
发明人： Kenichi Kurisu , Keiji Fuse
IPC分类号： G02B518
CPC分类号： G02B5/1857
摘要： The present invention provides a different optical element having superior optical characteristics. A polycrystalline substrate having crystal grains whose sizes are not more than 1 &mgr;m or an amorphous phase at the dry-etched surface thereof, or an upper film layer 8 formed on a polycrystalline substrate 1 being the same materials as that of the polycrystalline substrate 1, which has finer crystal grains than-those of the substrate. The upper film layer 8 is dry etched, and AR coat 6 is formed thereon.
摘要翻译：本发明提供了具有优异的光学特性的不同的光学元件。尺寸不大于1μm的晶粒或其干蚀刻表面的非晶相或多晶基板1上形成的上层膜8的多晶基板与多晶基板1的材料相同，其具有比基板更细的晶粒。上层膜8被干蚀刻，并在其上形成AR涂层6。

9. 发明申请

US20140147374A1 OPTICAL COMPONENT AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：光学元件及其制造方法
公开(公告)号：US20140147374A1
公开(公告)日：2014-05-29
申请号：US14004139
申请日：2012-09-28
申请人： Katsuhito Yoshida , Kenichi Kurisu , Tatsuya Kyotani
发明人： Katsuhito Yoshida , Kenichi Kurisu , Tatsuya Kyotani
IPC分类号： G02B1/02
CPC分类号： G02B1/02 , C04B35/547 , C04B35/645 , C04B2235/656 , C04B2235/77 , C04B2235/78 , C04B2235/786 , C04B2235/9638 , G02B3/00
摘要： An optical component of the present invention is composed of a ZnSe polycrystal body, and the ZnSe polycrystal body is constituted by crystal grains with an average grain size larger than or equal to 50 μm and smaller than or equal to 1 mm and has a relative density higher than or equal to 99%.
摘要翻译：本发明的光学部件由ZnSe多晶体构成，ZnSe多晶体由平均粒径大于等于50μm且小于等于1mm的晶粒构成，具有相对密度高于或等于99％。

10. 发明授权

US06750151B2 Etching method for ZnSe polycrystalline substrate 有权
标题翻译： ZnSe多晶基板蚀刻方法
公开(公告)号：US06750151B2
公开(公告)日：2004-06-15
申请号：US09993223
申请日：2001-11-26
申请人： Kenichi Kurisu
发明人： Kenichi Kurisu
IPC分类号： H01L21302
CPC分类号： H01J37/32082 , G02B5/18 , H01L21/465
摘要： When applying reactive ion etching on a ZnSe polycrystalline substrate, reactive gas used therefor is only chlorine-based gas which does not include a hydrocarbon group. Or the reactive gas is gas prepared by mixing chlorine-based gas which does not include a hydrocarbon group with other gas. The other gas is inert gas or gas which does not react to ZnSe. BCl3 gas is one kind of chlorine-based gas. Ar gas is one kind of inert gas. RF power is one means for activating the gas.
摘要翻译：当在ZnSe多晶衬底上施加反应离子蚀刻时，用于其的反应性气体仅为不包括烃基的氯基气体。或者反应气体是通过将不包括烃基的氯基气体与其它气体混合而制备的气体。另一种气体是不与ZnSe反应的惰性气体或气体。 BCl3气体是一种氯气。 Ar气是一种惰性气体。 RF功率是激活气体的一种手段。

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