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1. 发明申请

US20070181808A1 Electron microscope and electron bean inspection system. 审中-公开
标题翻译：电子显微镜和电子豆检查系统。
公开(公告)号：US20070181808A1
公开(公告)日：2007-08-09
申请号：US11701386
申请日：2007-02-02
申请人： Hisaya Murakoshi , Hideo Todokoro , Hiroyuki Shinada , Masaki Hasegawa , Momoyo Enyama
发明人： Hisaya Murakoshi , Hideo Todokoro , Hiroyuki Shinada , Masaki Hasegawa , Momoyo Enyama
IPC分类号： G21K7/00
CPC分类号： H01J37/29 , H01J2237/057 , H01J2237/1508 , H01J2237/24592 , H01J2237/2538 , H01J2237/2817
摘要： While an image obtained by a general electron microscope is affected by the shape and material of an object specimen, an image obtained from mirror electrons is affected by the shape of an equipotential surface on which the mirror electrons are reflected, thereby the image interpretation is complicated. A mirror electron microscope of the present invention is provided with the following means for controlling a reflecting plane of the mirror electrons according to the structure of an object pattern to be measured or a concerned defect.1) Means for controlling a potential difference between a specimen and an electron source equivalent to a height of a reflecting plane of a mirror electron beam according to a type, an operation condition of an electron source, and a type of a pattern on a specimen. 2) Means for controlling an energy distribution of an illuminating beam with an energy filter 9 disposed in an illuminating system. It is thus possible to inspect a specimen according to a size and a potential of a pattern, which are distinguished from others.
摘要翻译：当通过一般电子显微镜获得的图像受目标样本的形状和材料的影响时，由镜电子获得的图像受到反射镜电子反射的等电位面的形状的影响，从而图像解释复杂。本发明的镜电子显微镜具备以下用于根据被测量对象图案的结构或相关缺陷来控制镜电子的反射面的装置。 1）根据类型，电子源的操作条件和样品上的图案的类型来控制样品和电子源之间的电位差与电子束的反射面的高度的电位差的装置。 2）用于通过设置在照明系统中的能量过滤器9来控制照明光束的能量分布的装置。因此，可以根据区别于其他图案的尺寸和电位来检查样本。

2. 发明申请

US20080265161A1 Electron Microscope And Electron Beam Inspection System 审中-公开
标题翻译：电子显微镜和电子束检测系统
公开(公告)号：US20080265161A1
公开(公告)日：2008-10-30
申请号：US12144060
申请日：2008-06-23
申请人： Hisaya Murakoshi , Masaki Hasegawa , Hideo Todokoro
发明人： Hisaya Murakoshi , Masaki Hasegawa , Hideo Todokoro
IPC分类号： G21K7/00
CPC分类号： H01J37/29 , H01J37/147 , H01J2237/1508 , H01J2237/2538 , H01J2237/28
摘要： An electron microscope includes an electron source, a stage for mounting a specimen, an illuminating lens system that illuminates an electron beam onto the specimen, an imaging lens system that forms a specimen image using a reflecting electron beam of the illuminating electron beam, a beam separator that separates the illuminating electron beam and the reflecting electron beam, a control unit that controls current to be supplied to the beam separator; and a switching unit which enables switching between a first mode and a second mode. The control unit changes a value of the current to be supplied to the beam separator when switching from the first mode to the second mode.
摘要翻译：电子显微镜包括电子源，用于安装样本的台，将样品照射电子束的照明透镜系统，使用照射电子束的反射电子束形成标本图像的成像透镜系统，光束分离器，其分离照明电子束和反射电子束;控制单元，其控制供给到光束分离器的电流; 以及能够在第一模式和第二模式之间切换的切换单元。当从第一模式切换到第二模式时，控制单元改变要提供给分束器的电流的值。

3. 发明申请

US20060011835A1 Electron microscope and electron beam inspection system 有权
标题翻译：电子显微镜和电子束检查系统
公开(公告)号：US20060011835A1
公开(公告)日：2006-01-19
申请号：US11180671
申请日：2005-07-14
申请人： Hisaya Murakoshi , Masaki Hasegawa , Hideo Todokoro
发明人： Hisaya Murakoshi , Masaki Hasegawa , Hideo Todokoro
IPC分类号： G21K7/00
CPC分类号： H01J37/29 , H01J37/147 , H01J2237/1508 , H01J2237/2538 , H01J2237/28
摘要： An electron microscope includes an illuminating lens system that illuminates an electron beam that is emitted from an electron source onto a specimen as a planar illuminating electron beam having a two-dimensional spread, an imaging lens system that projects and magnifies the reflecting electron beam emitted from the specimen to project and form a specimen image, a beam separator that separates the illuminating electron beam from the reflecting electron beam, and a controller. The controller controls the reflecting electron beam so as to go straight through the beam separator, and the illuminating electron beam so as to keep a deflection angle of the illuminating electron beam which is made by the beam separator substantially constant.
摘要翻译：电子显微镜包括照明透镜系统，其将从电子源发射的电子束照射到样本上作为具有二维扩展的平面照明电子束;成像透镜系统，其投影并放大从投影并形成标本图像的样本，将照射电子束与反射电子束分离的光束分离器和控制器。控制器控制反射电子束以直线通过光束分离器，并且照明电子束以保持由光束分离器制成的照明电子束的偏转角大致恒定。

4. 发明授权

US07394066B2 Electron microscope and electron beam inspection system 有权
标题翻译：电子显微镜和电子束检查系统
公开(公告)号：US07394066B2
公开(公告)日：2008-07-01
申请号：US11180671
申请日：2005-07-14
申请人： Hisaya Murakoshi , Masaki Hasegawa , Hideo Todokoro
发明人： Hisaya Murakoshi , Masaki Hasegawa , Hideo Todokoro
IPC分类号： G21K7/00
CPC分类号： H01J37/29 , H01J37/147 , H01J2237/1508 , H01J2237/2538 , H01J2237/28
摘要： An electron microscope includes an illuminating lens system that illuminates an electron beam that is emitted from an electron source onto a specimen as a planar illuminating electron beam having a two-dimensional spread, an imaging lens system that projects and magnifies the reflecting electron beam emitted from the specimen to project and form a specimen image, a beam separator that separates the illuminating electron beam from the reflecting electron beam, and a controller. The controller controls the reflecting electron beam so as to go straight through the beam separator, and the illuminating electron beam so as to keep a deflection angle of the illuminating electron beam which is made by the beam separator substantially constant.
摘要翻译：电子显微镜包括照明透镜系统，其将从电子源发射的电子束照射到样本上作为具有二维扩展的平面照明电子束;成像透镜系统，其投影并放大从投影并形成标本图像的样本，将照射电子束与反射电子束分离的光束分离器和控制器。控制器控制反射电子束以直线通过光束分离器，并且照明电子束以保持由光束分离器制成的照明电子束的偏转角大致恒定。

5. 发明授权

US06979823B2 Patterned wafer inspection method and apparatus therefor 有权
标题翻译：图案化晶圆检查方法及其设备
公开(公告)号：US06979823B2
公开(公告)日：2005-12-27
申请号：US10865850
申请日：2004-06-14
申请人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
IPC分类号： G01N23/20 , G01N23/225 , G01Q20/02 , G01Q30/02 , G01Q30/04 , G01Q30/20 , H01J37/26 , H01L21/027 , H01L21/66 , H01J37/244
CPC分类号： H01J37/26 , G01N23/225 , H01J37/244 , H01J37/29 , H01J2237/20228 , H01J2237/221 , H01J2237/2447 , H01J2237/24475 , H01J2237/24485 , H01J2237/24592 , H01J2237/2482
摘要： An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.
摘要翻译：具有固定面积的电子束（区域光束）被照射到半导体样品的表面上，并且通过成像透镜对来自样品表面的反射电子进行成像，并且半导体样品的表面的多个区域的图像是获取并存储在图像存储单元中，并且将多个区域的存储图像相互比较，并且测量区域和缺陷位置中的缺陷的存在。通过这样做，在通过电子束在半导体装置的制造过程中测试相同设计的模式缺陷，异物和晶片上的残留物的装置可以实现测试的加速。

6. 发明授权

US07242015B2 Patterned wafer inspection method and apparatus therefor 有权
标题翻译：图案化晶圆检查方法及其设备
公开(公告)号：US07242015B2
公开(公告)日：2007-07-10
申请号：US11234197
申请日：2005-09-26
申请人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
IPC分类号： H01J37/153 , H01J37/30
CPC分类号： H01J37/26 , G01N23/225 , H01J37/244 , H01J37/29 , H01J2237/20228 , H01J2237/221 , H01J2237/2447 , H01J2237/24475 , H01J2237/24485 , H01J2237/24592 , H01J2237/2482
摘要： An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.
摘要翻译：具有固定面积的电子束（区域光束）被照射到半导体样品的表面上，并且通过成像透镜对来自样品表面的反射电子进行成像，并且半导体样品的表面的多个区域的图像是获取并存储在图像存储单元中，并且将多个区域的存储图像相互比较，并且测量区域和缺陷位置中的缺陷的存在。通过这样做，在通过电子束在半导体装置的制造过程中测试相同设计的模式缺陷，异物和晶片上的残留物的装置可以实现测试的加速。

7. 发明授权

US06797954B2 Patterned wafer inspection method and apparatus therefor 有权
标题翻译：图案化晶圆检查方法及其设备
公开(公告)号：US06797954B2
公开(公告)日：2004-09-28
申请号：US10400588
申请日：2003-03-28
申请人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
IPC分类号： H01J37244
CPC分类号： H01J37/26 , G01N23/225 , H01J37/244 , H01J37/29 , H01J2237/20228 , H01J2237/221 , H01J2237/2447 , H01J2237/24475 , H01J2237/24485 , H01J2237/24592 , H01J2237/2482
摘要： An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.
摘要翻译：具有固定面积的电子束（区域光束）被照射到半导体样品的表面上，并且通过成像透镜对来自样品表面的反射电子进行成像，并且半导体样品的表面的多个区域的图像是获取并存储在图像存储单元中，并且将多个区域的存储图像相互比较，并且测量区域和缺陷位置中的缺陷的存在。通过这样做，在通过电子束在半导体装置的制造过程中测试相同设计的模式缺陷，异物和晶片上的残留物的装置可以实现测试的加速。

8. 发明授权

US06476390B1 Method and apparatus for inspecting integrated circuit pattern using a plurality of charged particle beams 有权
标题翻译：使用多个带电粒子束检查集成电路图案的方法和装置
公开(公告)号：US06476390B1
公开(公告)日：2002-11-05
申请号：US09646281
申请日：2000-09-15
申请人： Hisaya Murakoshi , Yusuke Yajima , Hiroyuki Shinada , Mari Nozoe , Atsuko Takafuji , Kaoru Umemura , Masaki Hasegawa , Katsuhiro Kuroda
发明人： Hisaya Murakoshi , Yusuke Yajima , Hiroyuki Shinada , Mari Nozoe , Atsuko Takafuji , Kaoru Umemura , Masaki Hasegawa , Katsuhiro Kuroda
IPC分类号： G01N2300
CPC分类号： H01J37/28 , G01N23/225 , G01N23/2255 , H01J2237/16 , H01J2237/18 , H01J2237/2817 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： In a pattern inspection device of the present invention having at least three electron-optical systems, detection signals approximately simultaneously obtained from identical circuit patterns are compared with each other. Further, areas around plural electron sources can be maintained at high degrees of vacuum by evacuating an electron gun chamber mounted with plural electron guns independently of a sample chamber. Further, electric fields and magnetic fields are confined in each electron-optical system by a shield electrode which makes it possible to evacuate an electron beam path to a high degree of vacuum, and at the same time, secondary electrons and reflected electrons are detected in the same electron-optical system by setting the samples to a negative voltage and accelerating secondary electrons and reflected electrons toward the electron source side in the direction of the electron beam axis. Thus, defect determination in pattern inspection is performable substantially simultaneously, and at the same time, the throughput of the inspections is improvable in proportion to the number of the electron-optical systems. Further, three or more electron sources are operable in a stable manner in high vacuum states, and signals from closely arranged electron-optical systems are detectable with high accuracy, and accurate inspections are performable.
摘要翻译：在具有至少三个电子 - 光学系统的本发明的图案检查装置中，将从相同电路图形大致同时获得的检测信号彼此进行比较。此外，通过与安装有多个电子枪的电子枪室独立于样品室排出，可以将多个电子源周围的区域保持在高真空度。此外，通过屏蔽电极将电场和磁场限制在每个电子 - 光学系统中，该屏蔽电极使得可以将电子束路径排出到高真空度，同时二次电子和反射电子被检测到相同的电子 - 光学系统通过将样品设置为负电压并且在电子束轴的方向上将二次电子和反射电子加速朝向电子源侧。因此，图案检查中的缺陷确定可以基本上同时执行，并且同时，检查的吞吐量可以与电子 - 光学系统的数量成比例地改善。此外，三个或更多个电子源可以以高真空状态稳定地操作，并且来自紧密排列的电子 - 光学系统的信号可以高精度地检测，并且可以进行准确的检查。

9. 发明申请

US20060017014A1 Patterned wafer inspection method and apparatus therefor 有权
公开(公告)号：US20060017014A1
公开(公告)日：2006-01-26
申请号：US11234197
申请日：2005-09-26
申请人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
IPC分类号： G21G5/00
CPC分类号： H01J37/26 , G01N23/225 , H01J37/244 , H01J37/29 , H01J2237/20228 , H01J2237/221 , H01J2237/2447 , H01J2237/24475 , H01J2237/24485 , H01J2237/24592 , H01J2237/2482
摘要： An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.

10. 发明申请

US20080073533A1 Inspection system and inspection method 有权
标题翻译：检验制度和检验方法
公开(公告)号：US20080073533A1
公开(公告)日：2008-03-27
申请号：US11703154
申请日：2007-02-07
申请人： Hiroshi Makino , Masaki Hasegawa , Momoyo Enyama
发明人： Hiroshi Makino , Masaki Hasegawa , Momoyo Enyama
IPC分类号： G21K7/00
CPC分类号： G03F7/70616 , H01J37/20 , H01J37/222 , H01J37/265 , H01J37/29 , H01J2237/0048 , H01J2237/223 , H01J2237/226 , H01J2237/24578 , H01J2237/24592 , H01J2237/2583
摘要： There is a need for inspecting a heightwise variation in a sample. A holder holds a sample. A charge control unit charges the sample held by the holder. A retarding power supply applies a voltage to the sample held by the holder. An electro-optic system radiates an electron beam to the sample applied with a voltage by the retarding power supply and images a mirror electron returning near the surface of the sample. An image processing unit processes a mirror image resulting from imaging the mirror electron. The image processing unit outputs information corresponding to a difference between mirror images, i.e., a mirror image acquired by imaging the mirror electron and a mirror image for a prepared standard preparation, as a heightwise variation in a sample.
摘要翻译：需要检查样品的高度变化。持有人持有样本。收费控制单元收取由持有人持有的样本。延迟电源对由保持器保持的样品施加电压。电光系统通过延迟电源将电子束辐射到施加有电压的样品，并对在样品表面附近返回的镜电子进行成像。图像处理单元处理由镜电子成像产生的镜像。图像处理单元输出与镜像相对应的信息，即通过将镜像电子成像获得的镜像和准备的标准品的镜像作为样品的高度变化。

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