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1. 发明授权

US4177298A Method for producing an InSb thin film element 失效
标题翻译：用于制造InSb薄膜元件的方法
公开(公告)号：US4177298A
公开(公告)日：1979-12-04
申请号：US888465
申请日：1978-03-20
申请人： Junji Shigeta , Tetsu Oi , Nobuo Kotera , Muneyasu Nakashima , Nobuo Miyamoto
发明人： Junji Shigeta , Tetsu Oi , Nobuo Kotera , Muneyasu Nakashima , Nobuo Miyamoto
IPC分类号： C30B13/10 , H01L21/225 , H01L43/10 , H01L43/12 , H01L21/22 , H01L21/203 , H01L21/205
CPC分类号： H01L43/10 , C30B13/10 , H01L21/2258 , H01L43/14 , Y10S438/918 , Y10S438/971
摘要： A method for producing an InSb thin film element comprising the steps of forming an InSb polycrystalline thin film on a substrate, melting and recrystallizing the InSb polycrystalline thin film at a temperature above the melting point of InSb, and disposing a diffusion source which contains at least one element selected from the group consisting of Cu, Au, Ag, Zn, Na, K, Cd, B, Li, Ca, Fe, Mg, Ba, Al and Pb and then heating the InSb thin film so as to dope it with the desired element or elements in a range in which the total quantity does not exceed a concentration of 1.times.10.sup.18 cm.sup.-3. The InSb thin film element produced by this method has a very little current noise and a high signal-to-noise ratio. Further more, simultaneous doping of the said predetermined element or said elements and sb is more effective to reduce the current noise.
摘要翻译：一种InSb薄膜元件的制造方法，其特征在于，在基板上形成InSb多晶薄膜，在InSb熔点以上的温度下熔融并重结晶InSb多晶薄膜，并设置至少含有选自Cu，Au，Ag，Zn，Na，K，Cd，B，Li，Ca，Fe，Mg，Ba，Al和Pb中的一种元素，然后加热InSb薄膜以将其掺杂在总量不超过1×10 18 cm -3的浓度的范围内的期望元素。通过该方法制造的InSb薄膜元件具有非常小的电流噪声和高的信噪比。此外，同时掺杂所述预定元件或所述元件和sb更有效地降低电流噪声。

2. 发明授权

US4177372A Method and apparatus for laser zone melting 失效
标题翻译：激光区域熔化的方法和装置
公开(公告)号：US4177372A
公开(公告)日：1979-12-04
申请号：US799928
申请日：1977-05-24
申请人： Nobuo Kotera , Tetsu Oi , Takashi Nishida
发明人： Nobuo Kotera , Tetsu Oi , Takashi Nishida
IPC分类号： C30B13/00 , C30B13/24 , C30B13/28 , C30B29/40 , H01L21/208 , H01L21/268 , H01L43/12 , H01S3/131 , B23K9/00
CPC分类号： C30B13/24 , C30B13/00 , C30B29/60 , Y10S117/904 , Y10S148/09
摘要： A method for laser zone melting and apparatuses therefor wherein, in a zone melting method for a thin film due to the irradiation of laser beam, the laser beam is vibrated at the frequency of more than 1 Hz in the direction substantially perpendicular to the moving direction of a melting zone and the fluctuation of laser beam output is controlled to less than 1%. The zone-melted thin films manufactured by this method have good electrical properties resulting from less crystal imperfection, less non-stoichiometric excess atoms of the constituents, and less thickness corrugation of the film due to the suppression of temperature fluctuations and its spacial inhomogeneity at the time of zone melting.
摘要翻译：一种用于激光区域熔化的方法及其装置，其中，在由激光束的照射引起的薄膜区域熔化方法中，激光束以大于1Hz的频率在基本上垂直于移动方向的方向上振动的熔融区域，激光束输出的波动控制在小于1％。通过该方法制造的区域熔融的薄膜具有良好的电性能，由于较少的晶体缺陷，较少的非化学计量的组分的原子，以及由于抑制温度波动及其空间不均匀性而导致的膜的较小厚度波纹区域熔化时间。

3. 发明授权

US4128681A Method for producing an InSb thin film element 失效
标题翻译：用于制造InSb薄膜元件的方法
公开(公告)号：US4128681A
公开(公告)日：1978-12-05
申请号：US735139
申请日：1976-10-26
申请人： Nobuo Kotera , Nobuo Miyamoto
发明人： Nobuo Kotera , Nobuo Miyamoto
IPC分类号： C23C14/06 , H01L21/20 , H01L21/324 , H01L29/20 , H01L29/786 , H01L43/12 , B32B15/20
CPC分类号： H01L29/20 , H01L21/02381 , H01L21/0242 , H01L21/02488 , H01L21/02549 , H01L21/02667 , H01L21/3245 , H01L29/78681 , Y10S438/902 , Y10S438/967 , Y10T428/24331 , Y10T428/2495 , Y10T428/24967 , Y10T428/265
摘要： A method for producing an InSb thin film element comprising the steps of (i) preparing a substrate at least one surface of which is made of alumina or an inorganic insulating material containing at least 12 mol % of alumina, and forming an InSb thin film of a thickness of at most 0.2 .mu.m on the surface of said substrate, (ii) depositing on said InSb thin film a film which is made of an inorganic insulating material containing at least 12 mol % of alumina, (iii) heating said InSb thin film above the melting point of InSb, and (iv) cooling said InSb thin film and recrystallizing InSb. The InSb thin film element thus produced has the InSb thin film whose thickness is at most 0.2 .mu.m, whose surface is flat and which has good electrical characteristics.
摘要翻译：一种制造InSb薄膜元件的方法，包括以下步骤：（i）制备其至少一个表面由氧化铝制成的基材或含有至少12mol％氧化铝的无机绝缘材料，并形成InSb薄膜（ii）在所述InSb薄膜上沉积由含有至少12mol％的氧化铝的无机绝缘材料制成的膜，（iii）加热所述InSb薄膜的薄膜薄膜高于InSb的熔点，（iv）冷却所述InSb薄膜并重结晶InSb。由此制造的InSb薄膜元件的厚度为0.2μm以下的InSb薄膜，其表面平坦且具有良好的电气特性。

4. 发明授权

US4825145A Constant current circuit 失效
标题翻译：恒流电路
公开(公告)号：US4825145A
公开(公告)日：1989-04-25
申请号：US133914
申请日：1987-12-16
申请人： Hirotoshi Tanaka , Satoshi Tanaka , Taizo Kinoshita , Nobuo Kotera , Minoru Nagata
发明人： Hirotoshi Tanaka , Satoshi Tanaka , Taizo Kinoshita , Nobuo Kotera , Minoru Nagata
IPC分类号： G05F3/24
CPC分类号： G05F3/247
摘要： A constant current circuit includes a first FET providing an input reference current flow, a second FET providing an output current flow and a non-linear impedance element connected between the drain and the gate of the first FET. By setting a parameter of the non-linear impedance element and a parameter of the first FET to have a specific relationship with each other, the output current can be maintained at a substantially definite value irrespective of relatively large variations of the input reference current.
摘要翻译：恒流电路包括提供输入参考电流的第一FET，提供输出电流的第二FET和连接在第一FET的漏极和栅极之间的非线性阻抗元件。通过将非线性阻抗元件的参数和第一FET的参数设置为具有特定的关系，输出电流可以保持在基本上确定的值，而与输入参考电流的相对大的变化无关。

5. 发明授权

US4968904A MESFET circuit with threshold-compensated source-follower output 失效
标题翻译：具有阈值补偿源跟随器输出的MESFET电路
公开(公告)号：US4968904A
公开(公告)日：1990-11-06
申请号：US323947
申请日：1989-03-15
申请人： Kiichi Yamashita , Keiichi Kitamura , Nobuo Kotera , Yasushi Hatta , Hiroyuki Tanaka
发明人： Kiichi Yamashita , Keiichi Kitamura , Nobuo Kotera , Yasushi Hatta , Hiroyuki Tanaka
IPC分类号： H03K19/0952 , H01L27/095 , H03K19/003 , H03K19/094
CPC分类号： H03K19/00384 , H03K19/09436
摘要： A logic circuit made up of FET's is disclosed in which an output interface circuit is formed of a source follower circuit including a signal transmitting FET and a constant-current supplying FET, and a ratio of the gate width of the signal transmitting FET to the gate width of the constant-current supplying FET is set so that the high and low levels of the output signal of the logic circuit are independent of the threshold voltage of the FET's.
摘要翻译：公开了一种由FET构成的逻辑电路，其中输出接口电路由包括信号发送FET和恒流供应FET的源极跟随器电路以及信号发送FET的栅极宽度与栅极的比率设定恒流供给FET的宽度，使得逻辑电路的输出信号的高电平和低电平独立于FET的阈值电压。

6. 发明授权

US4857769A Threshold voltage fluctuation compensation circuit for FETS 失效
标题翻译： FETS的阈值电压波动补偿电路
公开(公告)号：US4857769A
公开(公告)日：1989-08-15
申请号：US143385
申请日：1988-01-13
申请人： Nobuo Kotera , Kiichi Yamashita , Taizo Kinoshita , Hirotoshi Tanaka , Satoshi Tanaka , Minoru Nagata
发明人： Nobuo Kotera , Kiichi Yamashita , Taizo Kinoshita , Hirotoshi Tanaka , Satoshi Tanaka , Minoru Nagata
IPC分类号： H03K19/003
CPC分类号： H03K19/00384
摘要： This invention relates to a threshold voltage detection circuit for detecting the threshold voltage of field effect transistors (FETs) and to a semiconductor circuit capable of a stable operation irrespective of the fluctuation of the threshold voltage by utilizing this threshold voltage detection circuit. The source-drain path of first FET is connected in series with that of second FET having substantially the same threshold voltage as that of the first FET and the conductances of these first and second FETs are set to a predetermined ratio to generate a voltage drop associated with the threshold voltage in the first FET. This voltage drop can be used for detecting the threshold voltage and for level-shifting. The output of the series connection of the first and second FETs is applied to the gate of a constant current FET having the same threshold voltage as that of the first and second FETs and the drain current of the constant current FET can thus be set irrespective of the fluctuation of the threshold voltage.
摘要翻译：本发明涉及一种阈值电压检测电路，用于通过利用该阈值电压检测电路来检测场效应晶体管（FET）的阈值电压和能够稳定工作的半导体电路，而与阈值电压的波动无关。第一FET的源极 - 漏极路径与具有与第一FET基本相同的阈值电压的第二FET的源极 - 漏极路径串联连接，并且将这些第一和第二FET的电导设置为预定的比率以产生相关的电压降与第一FET中的阈值电压。该电压降可用于检测阈值电压和电平转换。第一和第二FET的串联连接的输出被施加到具有与第一和第二FET相同的阈值电压的恒流FET的栅极，因此可以设定恒定电流FET的漏极电流，而不管阈值电压的波动。

7. 发明授权

US5132752A Field effect transistor 失效
标题翻译：场效应晶体管
公开(公告)号：US5132752A
公开(公告)日：1992-07-21
申请号：US658463
申请日：1991-02-22
申请人： Yasunari Umemoto , Nobuo Kotera , Kiichi Ueyanagi , Norikazu Hashimoto , Nobutoshi Matsunaga , Yasuo Wada , Shoji Shukuri , Noboru Masuda , Takehisa Hayashi , Hirotoshi Tanaka
发明人： Yasunari Umemoto , Nobuo Kotera , Kiichi Ueyanagi , Norikazu Hashimoto , Nobutoshi Matsunaga , Yasuo Wada , Shoji Shukuri , Noboru Masuda , Takehisa Hayashi , Hirotoshi Tanaka
IPC分类号： H01L29/10 , H01L29/812
CPC分类号： H01L29/1075 , H01L29/812 , Y10S257/903
摘要： A field effect transistor formed on a semi-insulator or compound semiconductor substrate comprises a first semiconductor layer forming a source region, a drain region and a channel layer, and a second semiconductor layer having a reverse conduction type to that of the first semiconductor layer. The second semiconductor layer is doped so that it will be totally depleted. Therefore, a portion of the second semiconductor layer adjacent to the substrate will remain conductive. The field effect transistor with this structure prevents the short channel effect and the soft error due to .alpha.-particles. A threshold voltage control arrangement is also provided using the feature of a control electrode coupled to the second semiconductor layer and a feedback arrangement.
摘要翻译：形成在半绝缘体或化合物半导体衬底上的场效应晶体管包括形成源极区，漏极区和沟道层的第一半导体层以及具有与第一半导体层相反的导通型的第二半导体层。第二半导体层被掺杂以使其完全耗尽。因此，与衬底相邻的第二半导体层的一部分将保持导电。具有这种结构的场效应晶体管防止短沟道效应和由于α-粒子引起的软误差。还使用耦合到第二半导体层的控制电极的特征和反馈装置来提供阈值电压控制装置。

8. 发明授权

US4518868A Superconductive large-scale integrated circuit chip 失效
标题翻译：超导大型集成电路芯片
公开(公告)号：US4518868A
公开(公告)日：1985-05-21
申请号：US278730
申请日：1981-06-29
申请人： Yutaka Harada , Kunio Yamashita , Nobuo Kotera , Hirotoshi Tanaka
发明人： Yutaka Harada , Kunio Yamashita , Nobuo Kotera , Hirotoshi Tanaka
IPC分类号： H01L27/18 , H01L39/02 , H01L39/22 , H03K17/92 , H03K19/195
CPC分类号： H03K17/92 , H01L27/18 , H01L39/025 , Y10S505/865
摘要： A superconductive large-scale integrated circuit chip comprises a plurality of pads, a superconductive line which short-circuits respectively adjacent pairs of the pads, and an input buffer circuit. The input buffer circuit includes a Josephson junction which is either in a superconducting state or a finite voltage state in response to a magnetic field established by current that is supplied to the superconductive line by flowing in from one of the two pads and flowing out from the other pad. The input buffer circuit wave-shapes the externally supplied signal into an amplitude-controlled signal, and the latter signal is led by a superconductive line to a circuit within the chip which requires the signal. Even when the external signal current has become abnormally great due to noise, etc., any circuit situated halfway within the chip can be prevented from malfunctioning from the magnetic flux generated by the large current.
摘要翻译：超导大规模集成电路芯片包括多个焊盘，分别相邻焊盘对短路的超导线和输入缓冲电路。输入缓冲电路包括约瑟夫逊结，其响应于由电流建立的磁场处于超导状态或有限电压状态，该电流通过从两个焊盘中的一个流入并从其中流出而被提供给超导线其他垫输入缓冲器电路将外部提供的信号波形成幅度控制信号，后一个信号由超导线引导到需要信号的芯片内的电路。即使当外部信号电流由于噪声等而变得异常大时，可以防止位于芯片中间的任何电路从由大电流产生的磁通发生故障。

9. 发明授权

US4223292A Hall element 失效
标题翻译：霍尔元件
公开(公告)号：US4223292A
公开(公告)日：1980-09-16
申请号：US927392
申请日：1978-07-24
申请人： Juichi Morikawa , Nobuo Kotera
发明人： Juichi Morikawa , Nobuo Kotera
IPC分类号： H01L43/06 , H01L43/04
CPC分类号： H01L43/065
摘要： A basically cross-shaped semiconductor Hall element comprises a pair of current-supplying electrodes as well as a pair of Hall electrodes. The structure includes trapezoidal semiconductor regions extending from the central magneto-sensitive region in both the current-supplying electrode directions to thereby suppress the element temperature rise due to Joule heating. In addition, the contiguous slant edges of the extended trapezoidal portion form an angle .theta. greater than 90.degree. with lateral edges of the central rectangular magneto-sensitive region to thereby suppress the semiconductor noise dependent on the shape itself.
摘要翻译：基本上十字形的半导体霍尔元件包括一对供电电极以及一对霍尔电极。该结构包括从供电电极方向上的中央磁敏区域延伸的梯形半导体区域，从而抑制由于焦耳加热引起的元件温度升高。此外，延伸梯形部分的连续倾斜边缘与中心矩形磁敏区域的横向边缘形成大于90°的角度θ，从而根据形状本身抑制半导体噪声。

10. 发明授权

US4881044A Amplifying circuit 失效
标题翻译：放大电路
公开(公告)号：US4881044A
公开(公告)日：1989-11-14
申请号：US139790
申请日：1987-12-30
申请人： Taizo Kinoshita , Satoshi Tanaka , Hirotoshi Tanaka , Nobuo Kotera , Minoru Nagata
发明人： Taizo Kinoshita , Satoshi Tanaka , Hirotoshi Tanaka , Nobuo Kotera , Minoru Nagata
IPC分类号： H03F3/45
CPC分类号： H03F3/45385
摘要： A wide-band and high-gain differential amplifier adapted to amplifying transmitted optical signals of the GHz band is constituted by GaAs MESFET's.Two MESFET's Q1 and Q2 are differentially connected to each other. Drains of Q1 and Q2 are connected to load resistances R.sub.L and R.sub.L via a source-drain path of other MESFET's Q3 and Q4 whose gates are grounded in AC-wise.Current by-passing means 4, 4 are connected to the sources of other MESFET's Q3, Q4. DC bias currents of the differential pair of MESFET's Q1, Q2 are set to relatively large values to increase the mutual conductance gm of the differential pair of MESFET's Q1, Q2. Despite a large DC bias current, the current by-passing means 4, 4 decrease the DC voltage drops across the load resistances R.sub.L, R.sub.L, and enable the differntial amplifier to operate on a low power source voltage.

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