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1. 发明授权

US08222619B2 Multi-column electron beam exposure apparatus and multi-column electron beam exposure method 有权
标题翻译：多列电子束曝光装置和多列电子束曝光方法
公开(公告)号：US08222619B2
公开(公告)日：2012-07-17
申请号：US12586717
申请日：2009-09-25
申请人： Akio Yamada , Hiroshi Yasuda , Mitsuhiro Nakano , Takashi Kiuchi
发明人： Akio Yamada , Hiroshi Yasuda , Mitsuhiro Nakano , Takashi Kiuchi
IPC分类号： A61N5/00 , G21G5/00
CPC分类号： B82Y40/00 , B82Y10/00 , H01J37/3045 , H01J37/3174 , H01J37/3177 , H01J2237/24507 , H01J2237/24521 , H01J2237/24535 , H01J2237/24542
摘要： A multi-column electron beam exposure apparatus includes: a plurality of column cells; a wafer stage including an electron-beam-property detecting unit for measuring an electron beam property; and a controller for measuring beam properties of electron beams used in all the column cells by using the electron-beam-property detecting unit, and for adjusting the electron beams of the respective column cells so that the properties of the electron beams used in the column cells may be approximately identical. The electron beam property may be any of a beam position, a beam intensity, and a beam shape of the electron beam to be emitted. The electron-beam-property detecting unit may be a chip for calibration with a reference mark formed thereon or a Faraday cup.
摘要翻译：多列电子束曝光装置包括：多个柱单元; 包括用于测量电子束特性的电子束特性检测单元的晶片台; 以及用于通过使用电子束特性检测单元来测量在所有列单元中使用的电子束的光束特性的控制器，并且用于调节各列电池的电子束，使得在列中使用的电子束的性质细胞可以大致相同。电子束特性可以是要发射的电子束的光束位置，光束强度和光束形状中的任何一个。电子束特性检测单元可以是用于在其上形成有参考标记的校准芯片或法拉第杯。

2. 发明申请

US20110226967A1 Electron beam lithography apparatus and electron beam lithography method 有权
标题翻译：电子束光刻设备和电子束光刻法
公开(公告)号：US20110226967A1
公开(公告)日：2011-09-22
申请号：US13068995
申请日：2011-05-25
申请人： Akio Yamada , Tomohiro Sakazaki , Hiroshi Yasuda
发明人： Akio Yamada , Tomohiro Sakazaki , Hiroshi Yasuda
IPC分类号： G21K5/00
CPC分类号： H01J37/3175 , B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： An electron beam lithography apparatus includes a storage for storing data on a drawing pattern assigned a rank based on an accuracy required for a device pattern, a drawing pattern adjustment unit to generate data on divided drawing patterns based on the rank, a settlement wait time adjustment unit to determine a settlement wait time based on the rank, and a controller to draw the device pattern while irradiating an electron beam based on the data on the divided drawing patterns and the settlement wait time. The drawing pattern adjustment unit determines upper limits on the long-side length of a divided drawing pattern or on the area of the divided drawing pattern based on the rank, and divides the drawing pattern based on the upper limits.
摘要翻译：一种电子束光刻设备，包括：存储器，用于根据设备图案所要求的准确度，对分配了等级的绘图图形进行数据存储;绘图模式调整单元，基于该等级生成分割图形的数据;结算等待时间调整基于等级确定结算等待时间的单元，以及基于划分的绘图图案和结算等待时间的数据来照射电子束时绘制设备图案的控制器。绘制图案调整单元基于等级来确定分割绘制图案的长边长度的上限或划分的绘制图案的区域的上限，并且基于上限划分绘图图案。

3. 发明授权

US07847272B2 Electron beam exposure mask, electron beam exposure method, and electron beam exposure system 有权
标题翻译：电子束曝光掩模，电子束曝光法和电子束曝光系统
公开(公告)号：US07847272B2
公开(公告)日：2010-12-07
申请号：US11235422
申请日：2005-09-26
申请人： Hiroshi Yasuda , Akio Yamada
发明人： Hiroshi Yasuda , Akio Yamada
IPC分类号： A61N5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/20 , H01J2237/31769
摘要： An electron beam exposure system is designed to correct a proximity effect. The electron beam exposure system includes: an electron beam generation unit for generating an electron beam; an electron beam exposure mask having opening portions that are arranged so that sizes of the opening portions change at a predetermined rate in order of arrangement; a mask deflection unit for deflecting the electron beam on the electron beam exposure mask; a substrate deflection unit for deflecting and projecting the electron beam onto a substrate; and a control unit for controlling deflection amounts in the mask deflection unit and the substrate deflection unit. The direction or directions of the change may be any one of a row direction and a column direction or may be the row and column directions.
摘要翻译：电子束曝光系统设计用于校正邻近效应。电子束曝光系统包括：用于产生电子束的电子束产生单元; 电子束曝光掩模，其具有开口部，其设置成使得开口部的尺寸按照布置的顺序以预定的速率变化; 用于使电子束在电子束曝光掩模上偏转的掩模偏转单元; 用于将电子束偏转和投影到衬底上的衬底偏转单元; 以及用于控制掩模偏转单元和基板偏转单元中的偏转量的控制单元。改变的方向或方向可以是行方向和列方向中的任何一个，或者可以是行和列方向。

4. 发明授权

US5965895A Method of providing changed particle beam exposure in which representative aligning marks on an object are detected to calculate an actual position to perform exposure 失效
标题翻译：提供改变的粒子束曝光的方法，其中检测到物体上的代表性对准标记以计算实际曝光的位置
公开(公告)号：US5965895A
公开(公告)日：1999-10-12
申请号：US964331
申请日：1997-11-04
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： A method for providing charged particle beam exposure onto an object having a plurality of chip areas with a plurality of aligning marks formed in correspondence to each of said chip areas. A charged particle beam is irradiated upon an object mounted on a mobile step based upon positions of the aligning marks. Actual positions of the alignment marks are detected and compared to the design positions of the alignment marks to determine approximate relationships which are used to calculate an actual position to perform exposure.
摘要翻译：一种用于向具有多个芯片区域的物体提供带电粒子束曝光的方法，所述多个芯片区域具有与每个所述芯片区域对应形成的多个对准标记。基于对准标记的位置，将带电粒子束照射在安装在移动台阶上的物体上。检测对准标记的实际位置并与对准标记的设计位置进行比较，以确定用于计算执行曝光的实际位置的近似关系。

5. 发明授权

US5546319A Method of and system for charged particle beam exposure 失效
标题翻译：带电粒子束曝光的方法和系统
公开(公告)号：US5546319A
公开(公告)日：1996-08-13
申请号：US379712
申请日：1995-01-27
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317 , H01J37/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector, a glitch waveform generated during a step change in the output or a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages or coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.
摘要翻译：为了提高曝光系统的吞吐量，通过在放大器和偏转器之间切换电阻来减小放大器的输出阶跃变化期间的设定时间，在输出的阶跃变化期间产生的毛刺波形或D / 在放大器的前级的A转换器被预期并且被校正波形抵消，在D / A转换器的输出已经稳定之后，该输出被采样保持，并且在平滑电路中内插步长变化，通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加偏转区域，通过添加一或两匝的辅助偏转线圈来改善主偏转的响应速度，并且通过组合坐标在晶片区域和芯片区域中的转换。为了校正电磁透镜的散光，设置两级或线圈，并将与偏转量相对应的电流提供给线圈。

6. 发明授权

US5444257A Electron-beam exposure system for reduced distortion of electron beam spot 失效
标题翻译：电子束曝光系统，减少电子束斑变形
公开(公告)号：US5444257A
公开(公告)日：1995-08-22
申请号：US319022
申请日：1994-10-06
申请人： Takamasa Satoh , Hiroshi Yasuda , Akio Yamada , Junichi Kai , Yoshihisa Oae , Keiji Yamada , Toru Oshima
发明人： Takamasa Satoh , Hiroshi Yasuda , Akio Yamada , Junichi Kai , Yoshihisa Oae , Keiji Yamada , Toru Oshima
IPC分类号： H01L21/027 , H01J37/153 , H01J37/00
CPC分类号： H01J37/153 , H01J2237/1504 , H01J2237/1532 , H01J2237/3175
摘要： An electron-beam exposure system includes an astigmatic compensation circuit that increases a voltage applied across a pair of electrodes forming an electrostatic sub-deflector and simultaneously decreases a voltage applied across another pair of electrodes forming the same electrostatic sub-deflector with a same magnitude as in the case of increasing the voltage, wherein the magnitude of the voltage change is changed in response to the deflection of the electron-beam caused by a main deflector.
摘要翻译：电子束曝光系统包括像散补偿电路，其增加施加在形成静电副偏转器的一对电极上的电压，并且同时降低施加在形成相同静电副偏转器的另一对电极上施加的电压，其具有与在增加电压的情况下，其中电压变化的大小响应于由主偏转器引起的电子束的偏转而改变。

7. 发明授权

US5260579A Charged particle beam exposure system and charged particle beam exposure method 失效
标题翻译：带电粒子束曝光系统和带电粒子束曝光方法
公开(公告)号：US5260579A
公开(公告)日：1993-11-09
申请号：US851400
申请日：1992-03-13
申请人： Hiroshi Yasuda , Yasushi Takahashi , Kiichi Sakamoto , Akio Yamada , Yoshihisa Oae , Junichi Kai , Shunsuke Fueki , Kenichi Kawashima
发明人： Hiroshi Yasuda , Yasushi Takahashi , Kiichi Sakamoto , Akio Yamada , Yoshihisa Oae , Junichi Kai , Shunsuke Fueki , Kenichi Kawashima
IPC分类号： H01J37/09 , H01J37/317 , H01J37/302
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/09 , H01J37/3177 , H01J2237/0435
摘要： A charged particle beam exposure system is directed to an exposure process of an electron beam for sequentially scanning an electron beam employing a blanking aperture array including a plurality of blanking apertures. The system facilitates re-focusing for compensation of focus error due to Coulumb effect and makes wiring the blanking aperture array easier. The system further allows exposure without an irradiation gap. The blanking aperture array 6 is formed with a plurality of said blanking apertures 62 arranged in a two-dimensional configuration. A control system 24 controls the blanking aperture array 62 to set the blanking aperture to the ON state where the charged particle beams pass through the blanking aperture and reach the object 19 to be exposed or the OFF state where the charged particle beams cannot reach the object 19 to be exposed. The other control system of the control means performs a control so that a plurality of said charged particle beams that have passed through different blanking apertures of said blanking aperture array overlaps and is irradiated a plurality of times onto the specified position or the peripheral position in the vicinity of the specified position of the object to be exposed to the charged particle beams.

8. 发明申请

US20100019172A1 Multi-column electron beam exposure apparatus and multi-column electron beam exposure method 有权
标题翻译：多列电子束曝光装置和多列电子束曝光方法
公开(公告)号：US20100019172A1
公开(公告)日：2010-01-28
申请号：US12586717
申请日：2009-09-25
申请人： Akio Yamada , Hiroshi Yasuda , Mitsuhiro Nakano , Takashi Kiuchi
发明人： Akio Yamada , Hiroshi Yasuda , Mitsuhiro Nakano , Takashi Kiuchi
IPC分类号： H01J37/30
CPC分类号： B82Y40/00 , B82Y10/00 , H01J37/3045 , H01J37/3174 , H01J37/3177 , H01J2237/24507 , H01J2237/24521 , H01J2237/24535 , H01J2237/24542
摘要： A multi-column electron beam exposure apparatus includes: a plurality of column cells; a wafer stage including an electron-beam-property detecting unit for measuring an electron beam property; and a controller for measuring beam properties of electron beams used in all the column cells by using the electron-beam-property detecting unit, and for adjusting the electron beams of the respective column cells so that the properties of the electron beams used in the column cells may be approximately identical. The electron beam property may be any of a beam position, a beam intensity, and a beam shape of the electron beam to be emitted. The electron-beam-property detecting unit may be a chip for calibration with a reference mark formed thereon or a Faraday cup.
摘要翻译：多列电子束曝光装置包括：多个柱单元; 包括用于测量电子束特性的电子束特性检测单元的晶片台; 以及用于通过使用电子束特性检测单元来测量在所有列单元中使用的电子束的光束特性的控制器，并且用于调节各个列单元的电子束，使得在列中使用的电子束的性质细胞可以大致相同。电子束特性可以是要发射的电子束的光束位置，光束强度和光束形状中的任何一个。电子束特性检测单元可以是用于在其上形成有参考标记的校准用芯片或法拉第杯。

9. 发明授权

US06903355B2 Electron beam exposure apparatus, electron beam method, semiconductor device manufacturing method, mask, and mask manufacturing method 有权
标题翻译：电子束曝光装置，电子束法，半导体器件制造方法，掩模和掩模制造方法
公开(公告)号：US06903355B2
公开(公告)日：2005-06-07
申请号：US10424888
申请日：2003-04-28
申请人： Hiroshi Yasuda , Akio Yamada , Takayuki Yabe
发明人： Hiroshi Yasuda , Akio Yamada , Takayuki Yabe
IPC分类号： G03F7/20 , H01J37/317 , G21G5/00 , A61N5/00 , G21K5/10
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/78 , H01J37/3174 , H01J2237/31764 , H01J2237/31776 , H01J2237/31794
摘要： An electron beam exposure apparatus for exposing a pattern accurately even if the current of the electron beam is high. The electron beam exposure apparatus 100 includes a mask 30 with a first and second block patterns for shaping the electron beam. Magnification of the first block pattern to a first exposure pattern which is to be exposed by the electron beam having a first current shaped by the first block pattern is different with magnification of the second block pattern to a second exposure pattern which is to be exposed by the electron beam having a second current shaped by the second block pattern.
摘要翻译：即使电子束的电流高的电子束曝光装置也能够精确地曝光图案。电子束曝光装置100包括具有用于成形电子束的第一和第二块图案的掩模30。将第一块图案放大到由具有由第一块图案形成的第一电流的电子束曝光的第一曝光图案与第二块图案的放大倍数相对于将被第二块图案曝光的第二曝光图案电子束具有由第二块图案形成的第二电流。

10. 发明授权

US06252344B1 Electron gun used in an electron beam exposure apparatus 有权
标题翻译：用于电子束曝光装置的电子枪
公开(公告)号：US06252344B1
公开(公告)日：2001-06-26
申请号：US09335398
申请日：1999-06-17
申请人： Yoshihisa Ooae , Takamasa Satoh , Akio Yamada , Hiroshi Yasuda
发明人： Yoshihisa Ooae , Takamasa Satoh , Akio Yamada , Hiroshi Yasuda
IPC分类号： H01J2976
CPC分类号： H01J37/241 , H01J2237/3175
摘要： An electron gun, preferably a four-pole electron gun, used in an electron beam exposure apparatus is formed by: a cathode for emitting an electron beam when supplying a negative and high-accelerated voltage; a first grid provided downstream of the cathode for focusing a crossover image of the electron beam when supplying a voltage which becomes a reverse bias for the cathode, and the cathode and the first grid being arranged at a high voltage side of a high voltage insulator; an anode for collecting the electron beam which passes through the first grid, and being arranged at a low voltage side of the high voltage insulator; and a second grid provided at the high voltage side of the high voltage insulator and between the first grid and the anode, and having an aperture for limiting an amount of the electron beam passing therethrough. A voltage which becomes a forward bias for the cathode is supplied to the second grid, and the crossover image is focused at the aperture of the second grid.
摘要翻译：电子束曝光装置中使用的优选四极电子枪的电子枪是通过以下方式形成的：用于在提供负高和高加速电压时发射电子束的阴极; 设置在阴极的下游的第一栅极，用于在提供成为阴极的反向偏压的电压时使聚焦电子束的交叉图像，并且阴极和第一栅极布置在高压绝缘体的高压侧; 用于收集通过第一栅格的电子束并且布置在高压绝缘体的低电压侧的阳极; 以及设置在高压绝缘子的高压侧和第一栅极与阳极之间的第二栅极，并且具有用于限制通过其中的电子束的量的孔。成为阴极的正向偏压的电压被提供给第二栅极，并且交叉图像聚焦在第二栅极的孔径处。

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