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1. 发明授权

US08466439B2 Electron beam lithography apparatus and electron beam lithography method 有权
标题翻译：电子束光刻设备和电子束光刻法
公开(公告)号：US08466439B2
公开(公告)日：2013-06-18
申请号：US13068995
申请日：2011-05-25
申请人： Akio Yamada , Tomohiro Sakazaki , Hiroshi Yasuda
发明人： Akio Yamada , Tomohiro Sakazaki , Hiroshi Yasuda
IPC分类号： G21K5/00 , H01J37/317
CPC分类号： H01J37/3175 , B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： An electron beam lithography apparatus includes a storage for storing data on a drawing pattern assigned a rank based on an accuracy required for a device pattern, a drawing pattern adjustment unit to generate data on divided drawing patterns based on the rank, a settlement wait time adjustment unit to determine a settlement wait time based on the rank, and a controller to draw the device pattern while irradiating an electron beam based on the data on the divided drawing patterns and the settlement wait time. The drawing pattern adjustment unit determines upper limits on the long-side length of a divided drawing pattern or on the area of the divided drawing pattern based on the rank, and divides the drawing pattern based on the upper limits.
摘要翻译：一种电子束光刻设备，包括：存储器，用于根据设备图案所要求的准确度，对分配了等级的绘图图形进行数据存储;绘图模式调整单元，基于该等级生成分割图形的数据;结算等待时间调整基于等级确定结算等待时间的单元，以及基于划分的绘图图案和结算等待时间的数据来照射电子束时绘制设备图案的控制器。绘制图案调整单元基于等级来确定分割绘制图案的长边长度的上限或划分的绘制图案的区域的上限，并且基于上限划分绘图图案。

2. 发明申请

US20110226967A1 Electron beam lithography apparatus and electron beam lithography method 有权
标题翻译：电子束光刻设备和电子束光刻法
公开(公告)号：US20110226967A1
公开(公告)日：2011-09-22
申请号：US13068995
申请日：2011-05-25
申请人： Akio Yamada , Tomohiro Sakazaki , Hiroshi Yasuda
发明人： Akio Yamada , Tomohiro Sakazaki , Hiroshi Yasuda
IPC分类号： G21K5/00
CPC分类号： H01J37/3175 , B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： An electron beam lithography apparatus includes a storage for storing data on a drawing pattern assigned a rank based on an accuracy required for a device pattern, a drawing pattern adjustment unit to generate data on divided drawing patterns based on the rank, a settlement wait time adjustment unit to determine a settlement wait time based on the rank, and a controller to draw the device pattern while irradiating an electron beam based on the data on the divided drawing patterns and the settlement wait time. The drawing pattern adjustment unit determines upper limits on the long-side length of a divided drawing pattern or on the area of the divided drawing pattern based on the rank, and divides the drawing pattern based on the upper limits.
摘要翻译：一种电子束光刻设备，包括：存储器，用于根据设备图案所要求的准确度，对分配了等级的绘图图形进行数据存储;绘图模式调整单元，基于该等级生成分割图形的数据;结算等待时间调整基于等级确定结算等待时间的单元，以及基于划分的绘图图案和结算等待时间的数据来照射电子束时绘制设备图案的控制器。绘制图案调整单元基于等级来确定分割绘制图案的长边长度的上限或划分的绘制图案的区域的上限，并且基于上限划分绘图图案。

3. 发明授权

US5969365A Charged-particle-beam exposure device and charged-particle-beam exposure method 失效
公开(公告)号：US5969365A
公开(公告)日：1999-10-19
申请号：US917464
申请日：1997-08-26
申请人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
发明人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
IPC分类号： G21K5/10 , H01J37/08 , H01J37/302 , H01J37/304
CPC分类号： H01J37/147 , B82Y10/00 , B82Y40/00 , H01J37/21 , H01J37/3045 , H01J37/3174 , H01J2237/024 , H01J2237/1502 , H01J2237/1504 , H01J2237/216 , H01J2237/30472
摘要： A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.

4. 发明授权

US06242751B1 Charged-particle-beam exposure device and charged-particle-beam exposure method 有权
标题翻译：带电粒子束曝光装置和带电粒子束曝光方法
公开(公告)号：US06242751B1
公开(公告)日：2001-06-05
申请号：US09353586
申请日：1999-07-15
申请人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
发明人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
IPC分类号： H01J37302
CPC分类号： H01J37/147 , B82Y10/00 , B82Y40/00 , H01J37/21 , H01J37/3045 , H01J37/3174 , H01J2237/024 , H01J2237/1502 , H01J2237/1504 , H01J2237/216 , H01J2237/30472
摘要： A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.
摘要翻译：通过将晶片引导到晶片，通过偏转器偏转的带电粒子束将晶片暴露于带电粒子束的方法包括以下步骤：在不同的高度处布置多个第一标记，将带电粒子束聚焦在每个通过使用设置在偏转器上方的聚焦线圈的第一标记，获得每个第一标记的聚焦距离，获得每个第一标记的偏转效率校正系数，并且使用焦距的线性函数来近似偏转 - 效率校正系数，以获得针对焦距的任意值的偏转效率校正系数。还提出了一种用于执行该方法的装置。

5. 发明授权

US5757015A Charged-particle-beam exposure device and charged-particle-beam exposure method 失效
标题翻译：带电粒子束曝光装置和带电粒子束曝光方法
公开(公告)号：US5757015A
公开(公告)日：1998-05-26
申请号：US634410
申请日：1996-04-18
申请人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
发明人： Akio Takemoto , Yoshihisa Ooaeh , Tomohiko Abe , Hiroshi Yasuda , Takamasa Satoh , Hideki Nasuno , Hidefumi Yabara , Kenichi Kawakami , Kiichi Sakamoto , Tomohiro Sakazaki , Isamu Seto , Masami Takigawa , Tatsuro Ohkawa
IPC分类号： G21K5/10 , H01J37/08 , H01J37/302 , H01J37/304
CPC分类号： H01J37/147 , B82Y10/00 , B82Y40/00 , H01J37/21 , H01J37/3045 , H01J37/3174 , H01J2237/024 , H01J2237/1502 , H01J2237/1504 , H01J2237/216 , H01J2237/30472
摘要： A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.
摘要翻译：通过将晶片引导到晶片，通过偏转器偏转的带电粒子束将晶片暴露于带电粒子束的方法包括以下步骤：在不同的高度处布置多个第一标记，将带电粒子束聚焦在每个通过使用设置在偏转器上方的聚焦线圈的第一标记，获得每个第一标记的聚焦距离，获得每个第一标记的偏转效率校正系数，并且使用焦距的线性函数来近似偏转 - 效率校正系数，以获得针对焦距的任意值的偏转效率校正系数。还介绍了一种用于执行该方法的设备。

6. 发明申请

US20080049204A1 Multi-column type electron beam exposure apparatus 审中-公开
标题翻译：多列式电子束曝光装置
公开(公告)号：US20080049204A1
公开(公告)日：2008-02-28
申请号：US11897501
申请日：2007-08-30
申请人： Hidefumi Yabara , Kenichi Miyazawa , Tomohiro Sakazaki , Kazuaki Tanaka
发明人： Hidefumi Yabara , Kenichi Miyazawa , Tomohiro Sakazaki , Kazuaki Tanaka
IPC分类号： G03B27/42
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J2237/31762 , H01J2237/31774
摘要： A multi-column type electron beam exposure apparatus includes: plural column cells disposed over a wafer, each including an electron gun, deflector for deflecting an electron beam emitted by the electron gun, and exposure data receiving unit for receiving exposure data; and correction computing unit for calculating the exposure data for use in the column cells. The correction computing unit includes exposure data controlling unit and exposure data transmitting unit for each of the column cells. The exposure data transmitting unit encodes the exposure data corrected by the exposure data controlling unit to convert the data into serial data, converts the serial data into a light signal, and transmits the light signal. The exposure data receiving unit converts the light signal into an electric signal, and decodes the encoded exposure data to convert the data into parallel data.
摘要翻译：多列型电子束曝光装置包括：设置在晶片上的多个列单元，每个包括电子枪，用于偏转由电子枪发射的电子束的偏转器和用于接收曝光数据的曝光数据接收单元; 以及校正计算单元，用于计算用于列单元格的曝光数据。校正计算单元包括用于每个列单元的曝光数据控制单元和曝光数据发送单元。曝光数据发送单元对由曝光数据控制单元校正的曝光数据进行编码，将数据转换为串行数据，将串行数据转换为光信号，并发送光信号。曝光数据接收单元将光信号转换为电信号，并对编码的曝光数据进行解码以将数据转换为并行数据。

7. 发明授权

US06344655B1 Multicolumn charged-particle beam lithography system 失效
标题翻译：多柱带电粒子束光刻系统
公开(公告)号：US06344655B1
公开(公告)日：2002-02-05
申请号：US09352426
申请日：1999-07-13
申请人： Tomohiro Sakazaki , Masami Takigawa
发明人： Tomohiro Sakazaki , Masami Takigawa
IPC分类号： H01J3730
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31774
摘要： Disclosed is a multicolumn charged-particle beam lithography system having the circuitry of a settlement wait time control unit thereof simplified. The settlement wait time control unit controls a settlement wait time to be spent by each of amplifiers connected to main deflectors necessary to realize concurrent exposure among columns. The charged-particle beam lithography system has a plurality of columns for patterning an exposed sample by deflecting and sweeping a charged-particle beam on the exposed sample according to expose pattern data. The charged-particle beam lithography system includes a settlement wait time control unit for controlling a settlement wait time to be spent by each of the amplifiers connected to the deflectors necessary to realize concurrent exposure among the columns. The settlement wait time control unit includes a circuit for comparing magnitudes of changes in deflection data items output from deflector adjusting circuits in the columns with one another and selecting a maximum value. The settlement wait time control unit further includes a circuit for determining a settlement wait time for all the columns according o the magnitude of a change of the selected maximum value.
摘要翻译：公开了一种具有其沉降等待时间控制单元的电路的多列带电粒子束光刻系统。结算等待时间控制单元控制连接到主导向器的每个放大器消耗的结算等待时间，以实现柱之间的并发曝光所必需的。带电粒子束光刻系统具有多个列，用于根据曝光图案数据偏转和扫描暴露样品上的带电粒子束来图案化曝光的样品。带电粒子束光刻系统包括一个沉降等待时间控制单元，用于控制连接到在柱之间实现同时曝光所必需的偏转器的每个放大器所消耗的沉降等待时间。结算等待时间控制单元包括用于将列中的偏转器调节电路输出的偏转数据项的变化幅度彼此进行比较并选择最大值的电路。结算等待时间控制单元还包括用于根据所选择的最大值的变化的大小来确定所有列的结算等待时间的电路。

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