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1. 发明申请

US20080291784A1 Acoustic Wave Sensor 失效
标题翻译：声波传感器
公开(公告)号：US20080291784A1
公开(公告)日：2008-11-27
申请号：US11572588
申请日：2005-07-27
申请人： Hiroshi Yamanaka , Yoshifumi Watabe , Yoshiaki Honda , Kousaku Kitada , Hiroshi Kawada , Tomoo Ohtsuka , Kazuo Sawada , Hiromichi Goto
发明人： Hiroshi Yamanaka , Yoshifumi Watabe , Yoshiaki Honda , Kousaku Kitada , Hiroshi Kawada , Tomoo Ohtsuka , Kazuo Sawada , Hiromichi Goto
IPC分类号： G01S15/06
CPC分类号： G01H11/06 , B06B1/02 , G01L9/0025 , G01S3/808 , G01S7/524 , G01S7/526
摘要： In an acoustic wave sensor for detecting a distance to an object and an orientation where the object is located with using acoustic waves, an acoustic wave generating device generating an acoustic wave by applying thermal impact to the air with no mechanical vibration is used as a wave transmitting device, and an electric capacitance microphone converting variation of pressure due to acoustic wave to variation of an electric signal is used as each wave receiving device. Therefore, dead zone caused by reverberation component included in the acoustic wave transmitted from the wave transmitting device and dead zone caused by reverberation component included in wave receiving signals outputted from the wave receiving devices can be shortened and angular sensitivity of the acoustic wave sensor can be increased, in comparison with a conventional acoustic wave sensor using piezoelectric devices as the wave transmitting device and the wave receiving devices.
摘要翻译：在声波传感器中，通过使用声波来检测物体的距离和物体的位置的声波传感器，使用通过对机械振动对空气进行热冲击来产生声波的声波发生装置作为波作为每个波接收装置，使用将由声波引起的压力变化的电容麦克风变换为电信号的变化。因此，可以缩短由包含在从波形接收装置输出的波形接收信号中的由波发送装置发送的声波和由混响成分引起的死区所引起的混响分量造成的死区，并且能够使声波传感器的角度灵敏度与使用压电装置作为波发送装置和波接收装置的常规声波传感器相比增加。

2. 发明授权

US08254209B2 Acoustic wave sensor 失效
标题翻译：声波传感器
公开(公告)号：US08254209B2
公开(公告)日：2012-08-28
申请号：US11572588
申请日：2005-07-27
申请人： Hiroshi Yamanaka , Yoshifumi Watabe , Yoshiaki Honda , Kousaku Kitada , Hiroshi Kawada , Tomoo Ohtsuka , Kazuo Sawada , Hiromichi Goto
发明人： Hiroshi Yamanaka , Yoshifumi Watabe , Yoshiaki Honda , Kousaku Kitada , Hiroshi Kawada , Tomoo Ohtsuka , Kazuo Sawada , Hiromichi Goto
IPC分类号： G01S15/06
CPC分类号： G01H11/06 , B06B1/02 , G01L9/0025 , G01S3/808 , G01S7/524 , G01S7/526
摘要： In an acoustic wave sensor for detecting a distance to an object and an orientation where the object is located with using acoustic waves, an acoustic wave generating device generating an acoustic wave by applying thermal impact to the air with no mechanical vibration is used as a wave transmitting device, and an electric capacitance microphone converting variation of pressure due to acoustic wave to variation of an electric signal is used as each wave receiving device. Therefore, dead zone caused by reverberation component included in the acoustic wave transmitted from the wave transmitting device and dead zone caused by reverberation component included in wave receiving signals outputted from the wave receiving devices can be shortened and angular sensitivity of the acoustic wave sensor can be increased, in comparison with a conventional acoustic wave sensor using piezoelectric devices as the wave transmitting device and the wave receiving devices.
摘要翻译：在声波传感器中，通过使用声波来检测物体的距离和物体的位置的声波传感器，使用通过对机械振动对空气进行热冲击来产生声波的声波发生装置作为波作为每个波接收装置，使用将由声波引起的压力变化的电容麦克风变换为电信号的变化。因此，可以缩短由包含在从波形接收装置输出的波形接收信号中的由波发送装置发送的声波和由混响成分引起的死区所引起的混响分量造成的死区，并且能够使声波传感器的角度灵敏度与使用压电装置作为波发送装置和波接收装置的常规声波传感器相比增加。

3. 发明授权

US06285118B1 Field emission-type electron source and manufacturing method thereof and display using the electron source 有权
标题翻译：场发射型电子源及其制造方法和使用电子源的显示
公开(公告)号：US06285118B1
公开(公告)日：2001-09-04
申请号：US09440166
申请日：1999-11-15
申请人： Takashi Hatai , Takuya Komoda , Yoshiaki Honda , Koichi Aizawa , Yoshifumi Watabe , Tsutomu Ichihara , Yukihiro Kondo , Nobuyoshi Koshida
发明人： Takashi Hatai , Takuya Komoda , Yoshiaki Honda , Koichi Aizawa , Yoshifumi Watabe , Tsutomu Ichihara , Yukihiro Kondo , Nobuyoshi Koshida
IPC分类号： H01J902
CPC分类号： B82Y10/00 , H01J1/312 , H01J9/025
摘要： A field emission type electron source 10 is provided with an n-type silicon substrate 1, a strong field drift layer 6 formed on the n-type silicon substrate 1 directly or inserting a polycrystalline silicon layer 3 therebetween, and an electrically conductive thin film 7, which is a thin gold film, formed on the strong field drift layer 6. Further, an ohmic electrode 2 is provided on the back surface of the n-type silicon substrate 1. Hereupon, electrons, which are injected from the n-type silicon substrate 1 into the strong field drift layer 6, drift in the strong field drift layer 6 toward the surface of the layer, and then pass through the electrically conductive thin film 7 to be emitted outward. The strong field drift layer 6 is formed by making the polycrystalline silicon 3 formed on the n-type silicon substrate 1 porous by means of an anodic oxidation, and further oxidizing it using dilute nitric acid or the like.
摘要翻译：场发射型电子源10设置有n型硅衬底1，直接形成在n型硅衬底1上或在其间插入多晶硅层3的强场漂移层6和导电薄膜7 ，其是形成在强场漂移层6上的薄金膜。此外，在n型硅衬底1的背面上设置欧姆电极2.因此，从n型衬底1注入的电子硅衬底1进入强场漂移层6，在强场漂移层6中向层的表面漂移，然后通过导电薄膜7向外发射。通过使形成在n型硅衬底1上的多晶硅3通过阳极氧化多孔，并且使用稀硝酸等进一步氧化，形成强场漂移层6。

4. 发明授权

US06236046B1 Infrared sensor 有权
标题翻译：红外传感器
公开(公告)号：US06236046B1
公开(公告)日：2001-05-22
申请号：US09167996
申请日：1998-10-07
申请人： Yoshifumi Watabe , Yoshiaki Honda , Kouichi Aizawa , Tsutomu Ichihara
发明人： Yoshifumi Watabe , Yoshiaki Honda , Kouichi Aizawa , Tsutomu Ichihara
IPC分类号： G01J100
CPC分类号： G01J5/061 , G01J5/04 , G01J5/045 , G01J5/06 , G01J5/10 , G01J2005/068 , H01L2224/48091 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： An infrared sensor is formed with a first infrared detecting element for infrared detection disposed in a container through a supporting substrate, and a second infrared detecting element for temperature compensation also disposed in the container to be shielded by the supporting substrate of the first infrared detecting element from incident infrared within the container, while a temperature sensing section of the first infrared detecting element is born in non-contacting state with respect to a supporting part of the substrate for the element, whereby the sensitivity can be remarkably improved with a simpler arrangement while keeping a high precision and inexpensiveness.
摘要翻译：红外线传感器形成有用于红外线检测的第一红外线检测元件，其通过支撑基板设置在容器中，并且用于温度补偿的第二红外检测元件也设置在容器中以被第一红外线检测元件的支撑基板屏蔽从容器内的入射红外线，第一红外线检测元件的温度检测部分相对于用于元件的基板的支撑部分处于非接触状态，由此可以通过更简单的布置显着提高灵敏度，同时保持高精度和廉价。

5. 发明授权

US06765342B1 Field emission-type electron source and manufacturing method thereof 失效
标题翻译：场致发射型电子源及其制造方法
公开(公告)号：US06765342B1
公开(公告)日：2004-07-20
申请号：US09688869
申请日：2000-10-17
申请人： Yoshiaki Honda , Tsutomu Ichihara , Takuya Komoda , Koichi Aizawa , Yoshifumi Watabe , Takashi Hatai
发明人： Yoshiaki Honda , Tsutomu Ichihara , Takuya Komoda , Koichi Aizawa , Yoshifumi Watabe , Takashi Hatai
IPC分类号： H01J130
CPC分类号： B82Y10/00 , H01J1/312
摘要： A field emission-type electron source 10 includes an insulative substrate 11 in the form of a glass substrate having an electroconductive layer 8 formed thereon. A strong electrical field drift layer 6 in the form of an oxidized porous polycrystalline silicon layer is formed over the electroconductive layer 8. This electroconductive layer 8 includes a lower electroconductive film 8a, made of copper and formed on the insulative substrate 11, and an upper electroconductive film 8b made of aluminum and formed over the electroconductive film 8a. The strong electrical field drift layer 6 is formed by forming a polycrystalline silicon layer on the electroconductive layer 8, rendering the polycrystalline silicon layer to be porous and finally oxidizing it. The upper electroconductive film 8b has a property that reacts easily with silicon and, therefore, formation of an amorphous layer which would occur during formation of the polycrystalline silicon layer can be suppressed.
摘要翻译：场发射型电子源10包括形成有导电层8的玻璃基板形式的绝缘基板11。在导电层8上形成氧化多孔多晶硅层形式的强电场漂移层6.该导电层8包括由铜制成的下部导电膜8a，并形成在绝缘基板11上，由铝制成并形成在导电膜8a上的导电膜8b。通过在导电层8上形成多晶硅层，形成强电场漂移层6，使多晶硅层多孔化，最终将其氧化。上导电膜8b具有与硅反应容易的性质，因此可以抑制在形成多晶硅层期间发生的非晶层的形成。

6. 发明授权

US06707061B2 Field emission type electron source 失效
标题翻译：场发射型电子源
公开(公告)号：US06707061B2
公开(公告)日：2004-03-16
申请号：US10048478
申请日：2002-07-22
申请人： Takuya Komoda , Yoshiaki Honda , Koichi Aizawa , Tsutomu Ichihara , Yoshifumi Watabe , Takashi Hatai , Toru Baba
发明人： Takuya Komoda , Yoshiaki Honda , Koichi Aizawa , Tsutomu Ichihara , Yoshifumi Watabe , Takashi Hatai , Toru Baba
IPC分类号： H01L2912
CPC分类号： B82Y10/00 , H01J1/312 , H01J2329/00
摘要： In a field emission-type electron source (10), lower electrodes (8) made of an electroconductive layer, a strong field drift layer (6) including drift portions (6a) made of an oxidized or nitrided porous semiconductor, and surface electrodes (7) made of a metal layer are provided on an upper side of a dielectric substrate (11) made of glass. When voltage is applied to cause the surface electrodes (7) to be anodic with respect to the lower electrodes (8), electrons injected from the lower electrodes (8) to the strong field drift layer (6) are led to drift through the strong field drift layer (6) and are emitted outside through the surface electrodes (7). A pn-junction semiconductor layer composed of an n-layer (21) and a p-layer (22) is provided between the lower electrode (8) and the strong field drift layer (6) to prevent a leakage current from flowing to the surface electrode (7) from the lower electrode (8), thereby reducing amount of power consumption.
摘要翻译：在场致发射型电子源（10）中，由导电层制成的下电极（8）包括由氧化或氮化多孔半导体制成的漂移部分（6a）的强场漂移层（6）和表面电极 7）由金属层制成，设置在由玻璃制成的电介质基板（11）的上侧。当施加电压以使表面电极（7）相对于下电极（8）呈阳极时，从下电极（8）注入的强电场漂移层（6）的电子通过强电场场漂移层（6），并通过表面电极（7）发射到外部。在下电极（8）和强场漂移层（6）之间设置由n层（21）和p层（22）构成的pn结半导体层，以防止漏电流流向表面电极（7），从而减少功耗。

7. 发明授权

US06583578B1 Field emission-type electron source and manufacturing method thereof 有权
标题翻译：场致发射型电子源及其制造方法
公开(公告)号：US06583578B1
公开(公告)日：2003-06-24
申请号：US09688874
申请日：2000-10-17
申请人： Tsutomu Ichihara , Takuya Komoda , Koichi Aizawa , Yoshiaki Honda , Yoshifumi Watabe , Takashi Hatai
发明人： Tsutomu Ichihara , Takuya Komoda , Koichi Aizawa , Yoshiaki Honda , Yoshifumi Watabe , Takashi Hatai
IPC分类号： G09G310
CPC分类号： B82Y10/00 , H01J1/312 , H01J9/022
摘要： An electron source (10) is provided with an n-type silicon substrate (1) as a conductive substrate, a drift layer (6) composed of oxidized porous polycrystalline silicon which is formed on the main surface of the silicon substrate (1), and a surface electrode (7) as a conductive thin film formed on the drift layer (6). The process for, forming the surface electrode (7) includes the steps of forming a first layer composed of Cr on the drift layer (6), forming a second layer composed of Au on the first layer, and alloying the two layers. The surface electrode (7) has higher adhesion for the drift layer 6 and/or stability for the lapse of time. In addition, the surface electrode (7) has lower density of states in an energy region near energy of emitted electrons, in comparison with the simple substance of Cr. In the surface electrode (7), scattering of the electrons is less so that electron emitting efficiency is higher.
摘要翻译：电子源（10）设置有作为导电基板的n型硅基板（1），形成在硅基板（1）的主表面上的由氧化多孔多晶硅构成的漂移层（6）以及形成在漂移层（6）上的作为导电薄膜的表面电极（7）。形成表面电极（7）的工艺包括以下步骤：在漂移层（6）上形成由Cr构成的第一层，在第一层上形成由Au构成的第二层，并使两层合金化。表面电极（7）对于漂移层6具有较高的粘附力和/或经过时间的稳定性。此外，与Cr的单质相比，表面电极（7）在发射电子能量附近的能量区域具有较低的状态密度。在表面电极（7）中，电子的散射较小，电子发射效率较高。

8. 发明授权

US07709795B2 Infrared sensor unit and process of fabricating the same 失效
标题翻译：红外传感器单元及其制造工艺
公开(公告)号：US07709795B2
公开(公告)日：2010-05-04
申请号：US12063850
申请日：2006-08-16
申请人： Hiroshi Yamanaka , Tsutomu Ichihara , Yoshifumi Watabe , Koji Tsuji , Masao Kirihara , Takaaki Yoshihara , Yoichi Nishijima , Satoshi Hyodo
发明人： Hiroshi Yamanaka , Tsutomu Ichihara , Yoshifumi Watabe , Koji Tsuji , Masao Kirihara , Takaaki Yoshihara , Yoichi Nishijima , Satoshi Hyodo
IPC分类号： G01J5/20
CPC分类号： G01J5/10 , G01J5/20 , H01L31/0284 , H01L31/103
摘要： An infrared sensor unit has a thermal infrared sensor and an associated semiconductor device commonly developed on a semiconductor substrate. A dielectric top layer covers the substrate to conceal the semiconductor device formed in the top surface of the substrate. The thermal infrared sensor carried on a sensor mount which is supported above the semiconductor device by means of a thermal insulation support. The sensor mount and the support are made of a porous material which is superimposed on top of the dielectric top layer.
摘要翻译：红外传感器单元具有通常在半导体衬底上显影的热红外传感器和相关的半导体器件。电介质顶层覆盖衬底以隐藏形成在衬底顶表面中的半导体器件。热红外传感器承载在通过绝热支撑件支撑在半导体器件上方的传感器座上。传感器支架和支撑件由多孔材料制成，该多孔材料叠加在电介质顶层的顶部。

9. 发明授权

US08253578B2 Smoke sensor of the sound wave type including a smoke density estimation unit 失效
标题翻译：包括烟雾密度估计单元在内的声波型烟传感器
公开(公告)号：US08253578B2
公开(公告)日：2012-08-28
申请号：US12300332
申请日：2007-05-01
申请人： Yoshifumi Watabe , Yoshiaki Honda , Tomizo Terasawa , Yuji Takada , Takayuki Nishikawa
发明人： Yoshifumi Watabe , Yoshiaki Honda , Tomizo Terasawa , Yuji Takada , Takayuki Nishikawa
IPC分类号： G08B21/00
CPC分类号： G08B17/10 , G01N29/024 , G01N29/4427 , G01N2291/0217 , G01N2291/02818 , G01N2291/02881 , G01N2291/048 , G08B17/103 , G08B17/113
摘要： The present invention provides a smoke sensor of sound wave type that excels in responsiveness and has a low probability of false detection. The smoke sensor has a sound wave generating unit that provides an ultrasound wave to a monitoring space, a sound wave receiving unit that receives the ultrasound wave from the sound wave generating unit via the monitoring space, and a signal processing unit that detects an abnormality of the monitoring space by using an output of the sound wave receiving unit. The signal processing unit includes a smoke density estimation unit that estimates a smoke density in the monitoring space on the basis of a difference between the output of the sound wave receiving unit and a standard value, and a smoke density determination unit that determines the abnormality of the monitoring space by comparing the smoke density estimated by the smoke density estimation unit with a predetermined threshold.
摘要翻译：本发明提供一种声响型烟雾传感器，其响应性优异，误检测概率低。烟传感器具有向监控空间提供超声波的声波发生单元，经由监视空间从声波发生单元接收超声波的声波接收单元，以及检测异常的信号处理单元通过使用声波接收单元的输出来监视空间。信号处理单元包括烟浓度估计单元，其基于声波接收单元的输出与标准值之间的差来估计监视空间中的烟浓度，以及烟浓度确定单元，其确定通过将由烟雾浓度估计单元估计的烟浓度与预定阈值进行比较来监视空间。

10. 发明授权

US07881157B2 Pressure wave generator and production method therefor 有权
标题翻译：压力波发生器及其生产方法
公开(公告)号：US07881157B2
公开(公告)日：2011-02-01
申请号：US12066646
申请日：2006-10-19
申请人： Yoshifumi Watabe , Yoshiaki Honda
发明人： Yoshifumi Watabe , Yoshiaki Honda
IPC分类号： H04R23/00 , B06B1/00
CPC分类号： B06B1/02 , H04R19/005 , H04R23/002 , H04R31/00
摘要： A pressure wave generator is provided, which has excellent output stability over time. This pressure wave generator comprises a substrate, a heat generating layer, and a heat insulating layer formed between the substrate and the heat generating layer. A pressure wave is generated in a surrounding medium (air) by a change in temperature of the heat generating layer, which is caused upon energization of the heat generating layer. The heat insulating layer comprises a porous layer and a barrier layer formed between the porous layer and the heat generating layer to prevent diffusion of reactive substances such as oxygen and moisture in the air and impurities into the porous layer. By the formation of the barrier layer, it is possible to prevent a reduction in output of the pressure wave generator caused by a change over time of the porous layer.
摘要翻译：提供压力波发生器，随着时间的推移，输出稳定性优异。该压力波发生器包括基板，发热层和形成在基板和发热层之间的隔热层。通过在发热层通电时发热层的温度变化，在周围的介质（空气）中产生压力波。绝热层包括多孔层和形成在多孔层和发热层之间的阻挡层，以防止空气中的反应物质如氧气和水分等扩散到多孔层中。通过形成阻挡层，可以防止由多孔层随时间的变化引起的压力波发生器的输出的降低。

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