专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050077183A1 Anodic oxidation apparatus, anodic oxidation method, and panel for display device 失效
标题翻译：阳极氧化装置，阳极氧化法，显示装置用面板
公开(公告)号：US20050077183A1
公开(公告)日：2005-04-14
申请号：US10924830
申请日：2004-08-25
申请人： Yasushi Yagi , Mitsuru Ushijima , Yoshifumi Watabe , Takuya Komoda , Koichi Aizawa
发明人： Yasushi Yagi , Mitsuru Ushijima , Yoshifumi Watabe , Takuya Komoda , Koichi Aizawa
IPC分类号： H01L21/3063 , C25D5/00 , C25D11/02 , C25D11/32 , C25D17/00 , C25F3/12 , C25F3/14 , C25F7/00 , H01J31/15 , H01L21/02 , H01L21/316
CPC分类号： C25D11/02 , C25D11/005 , C25D11/32 , C25F3/12 , C25F3/14 , C25F7/00 , H01L21/02203 , H01L21/02238 , H01L21/02258 , H01L21/3167 , H01L21/31675 , Y10S204/07
摘要： In an anodic oxidation apparatus and an anodic oxidation method and a panel for a display device manufactured by them, a large target substrate is treated by a smaller component. The anodic oxidation apparatus includes a lamp which emits light; a treatment bath which has a stage capable of mounting a target substrate thereon with a treatment part thereof directed upward and is provided at a position where the emitted light reaches and a frame located on the stage; a cathode electrode which is provided on the way of the emitted light to reach the mounted target substrate and includes an opening to allow the light to pass therethrough; a seal member which establishes a liquid sealing property between the frame and the mounted target substrate; a conductive contact member which is provided to be contactable with a plurality of electrode patterns formed on the target substrate outside an annular shape of the seal member and moves along side of the target substrate; and a current source which is electrically connected to the contact member and sets an output current value in accordance with the number of electrode patterns of the mounted target substrate in contact as the contact member moves.
摘要翻译：在阳极氧化装置和阳极氧化法以及由它们制造的显示装置的面板中，通过较小的成分处理大的靶基板。阳极氧化装置包括发光的灯; 处理槽，其具有能够在其上安装目标基板的阶段，其处理部分向上指向并设置在所发射的光到达的位置和位于台上的框架; 阴极，其设置在所发射的光的路上，以到达所安装的目标基板，并且包括允许光通过的开口; 密封构件，其在所述框架和所安装的目标基板之间建立液体密封性; 导电接触构件，其设置成可与形成在所述目标基板上的多个电极图案接触，所述多个电极图案位于所述密封构件的环形形状的外侧，并且沿着所述目标基板的侧面移动; 以及电流源，其电连接到所述接触构件，并且当所述接触构件移动时，根据所接触的安装的目标衬底的电极图案的数量设定输出电流值。

2. 发明授权

US06753196B2 Method of and apparatus for manufacturing field emission-type electron source 失效
标题翻译：场致发射型电子源的制造方法和装置
公开(公告)号：US06753196B2
公开(公告)日：2004-06-22
申请号：US10178409
申请日：2002-06-25
申请人： Takuya Komoda , Tsutomu Ichihara , Koichi Aizawa , Yoshiaki Honda , Yoshifumi Watabe , Takashi Hatai , Toru Baba
发明人： Takuya Komoda , Tsutomu Ichihara , Koichi Aizawa , Yoshiaki Honda , Yoshifumi Watabe , Takashi Hatai , Toru Baba
IPC分类号： H01L2100
CPC分类号： B82Y10/00 , H01J9/025
摘要： An electron source 10 has an n-type silicon substrate 1, a drift layer 6 formed on one surface of the substrate 1, and a surface electrode 7 formed on the drift layer 6. A voltage is applied so that the surface electrode 7 becomes positive in polarity relevant to the substrate 1, whereby electrons injected from the substrate 1 into the drift layer 6 drift within the drift layer 6, and are emitted through the surface electrode 7. In a process for manufacturing this electron source 10, when the drift layer 6 is formed, a porous semiconductor layer containing a semiconductor nanocrystal is formed in accordance with anodic oxidation. Then, an insulating film is formed on the surface of each semiconductor nanocrystal. Anodic oxidation is carried out while emitting light that essentially contains a wavelength in a visible light region relevant to the semiconductor layer.
摘要翻译：电子源10具有n型硅衬底1，形成在衬底1的一个表面上的漂移层6和形成在漂移层6上的表面电极7.施加电压使得表面电极7变为正与衬底1相关的极性，由此从衬底1注入漂移层6的电子在漂移层6内漂移，并通过表面电极7发射。在制造该电子源10的过程中，当漂移层如图6所示，根据阳极氧化形成含有半导体纳米晶体的多孔半导体层。然后，在每个半导体纳米晶体的表面上形成绝缘膜。在发射基本上包含与半导体层相关的可见光区域中的波长的光的同时进行阳极氧化。

3. 发明申请

US20100147385A1 ORGANIC PHOTOVOLTAIC DEVICE 审中-公开
标题翻译：有机光伏器件
公开(公告)号：US20100147385A1
公开(公告)日：2010-06-17
申请号：US11996858
申请日：2006-07-26
申请人： Kenji Kawano , Norihiro Ito , Takuya Komoda , Jun SAKAI
发明人： Kenji Kawano , Norihiro Ito , Takuya Komoda , Jun SAKAI
IPC分类号： H01L31/00
CPC分类号： H01L51/4253 , B82Y10/00 , H01L51/0038 , H01L51/0047 , H01L51/422 , H01L51/442 , Y02E10/549
摘要： In an organic power generating device that generates electricity by receiving light, a positive electrode and a negative electrode, at least one of which has transparency, a power generating layer which is formed of a mixture of an electron donor material and a hole donor material and generates electricity upon reception of light and disposed between the positive electrode and the negative electrode, and an inorganic layer which has a work function larger than that of the positive electrode and is disposed between the power generating layer and the positive electrode, are provided. Accordingly, an efficiency to take off electric charges from the power generating layer can be increased, so that the organic power generating device with high efficiency and long life can be obtained.
摘要翻译：在通过接收光产生电力的有机发电装置中，至少其中一个具有透明度的正电极和负电极，由电子供体材料和空穴供体材料的混合物形成的发电层和在正极和负极之间设置接收光并产生电力，并且具有功函数大于正极的功函数并且设置在发电层和正电极之间的无机层。因此，可以提高从发电层取出电荷的效率，从而可以获得效率高，寿命长的有机发电装置。

4. 发明授权

US06940087B2 Quantum device 失效
标题翻译：量子设备
公开(公告)号：US06940087B2
公开(公告)日：2005-09-06
申请号：US10480262
申请日：2003-03-07
申请人： Takuya Komoda , Nobuyoshi Koshida , Tsutomu Ichihara
发明人： Takuya Komoda , Nobuyoshi Koshida , Tsutomu Ichihara
IPC分类号： B82B1/00 , C09K11/59 , H01J1/312 , H01J9/02 , H01L29/06 , H01L29/66
CPC分类号： B82Y20/00 , B82Y10/00 , C09K11/59 , H01J1/312 , H01J9/022
摘要： Disclosed is an electron source 10 including an electron source element 10a formed on the side of one surface of an insulative substrate 1. The electron source element 10a includes a lower electrode 2, a composite nanocrystal layer 6 and a surface electrode 7. The composite nanocrystal layer 6 includes a plurality of polycrystalline silicon grains 51, a thin silicon oxide film 52 formed over the surface of each of the grains 51, a number of nanocrystalline silicons 63 residing between the adjacent grains 51, and a silicon oxide film 64 formed over the surface of each of the nanocrystalline silicons 63. The silicon oxide film 64 is an insulating film having a thickness less than the crystal grain size of the nanocrystalline silicon 63. The surface electrode 7 is formed of a carbon thin film 7a laminated on the composite nanocrystal layer 6 while being in contact therewith, and a metal thin film 7b laminated on the carbon thin film 7a.
摘要翻译：公开了一种电子源10，其包括形成在绝缘基板1的一个表面侧上的电子源元件10a。电子源元件10a包括下电极2，复合纳米晶层6和表面电极7。复合纳米晶层6包括多个多晶硅颗粒51，形成在每个晶粒51的表面上的薄氧化硅膜52，位于相邻晶粒51之间的多个纳米晶硅63和氧化硅膜64 形成在每个纳米晶硅63的表面上。氧化硅膜64是具有小于纳米晶硅63的晶粒尺寸的厚度的绝缘膜。表面电极7由层叠在复合纳米晶层6上而与其接触的碳薄膜7a和层叠在碳薄膜7a上的金属薄膜7b形成。

5. 发明授权

US5852346A Forming luminescent silicon material and electro-luminescent device containing that material 失效
标题翻译：形成发光硅材料和含有该材料的电致发光器件
公开(公告)号：US5852346A
公开(公告)日：1998-12-22
申请号：US929251
申请日：1997-09-15
申请人： Takuya Komoda , Peter Layton Francis Hemment
发明人： Takuya Komoda , Peter Layton Francis Hemment
IPC分类号： C23C14/14 , C23C14/48 , C23C14/58 , H01L33/34 , H01L21/265
CPC分类号： C23C14/14 , C23C14/48 , C23C14/58 , C23C14/5806 , C23C14/584 , H01L33/343 , H01L33/346
摘要： A process is provided for forming a silicon material which exhibits room temperature photoluminescence and/or electroluminescence. It comprises the steps of implanting silicon ions into a silicon oxide (SiO.sub.2) substrate and subsequently annealing the substrate at an elevated temperature for a period such as to bring about Si nanocrystal formation, the nanocrystals being dispersed through the SiO.sub.2 substrate. Photoluminescence of visible light from the resulting substrate is induced on irradiation of the substrate with e.g. ultraviolet light, and the substrate can also be incorporated into an electroluminescent device. The process is characterised by the features of implanting silicon ions at a dose from 1.times.10.sup.17 /cm.sup.2 to less than that required to produce saturation and by the use of an implantation energy of 100 keV or more. The resulting silicon nanocrystals dispersed through the SiO.sub.2 substrate have an average particle size of about 30 .ANG..
摘要翻译：提供一种形成表现出室温光致发光和/或电致发光的硅材料的方法。它包括以下步骤：将硅离子注入到氧化硅（SiO 2）衬底中，随后在升高的温度下退火衬底一段时间以产生Si纳米晶体形成，纳米晶体通过SiO 2衬底分散。来自所得底物的可见光的光致发光在基板的照射下被诱导。紫外光，并且基板也可以结合到电致发光器件中。该方法的特征在于以1×10 17 / cm 2的剂量将硅离子注入到小于产生饱和所需的硅离子，并且通过使用100keV以上的注入能量。通过SiO 2衬底分散的所得硅纳米晶体的平均粒度为约30。

6. 发明授权

US5075751A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5075751A
公开(公告)日：1991-12-24
申请号：US584485
申请日：1990-09-17
申请人： Kazushi Tomii , Toshiroh Abe , Takuya Komoda
发明人： Kazushi Tomii , Toshiroh Abe , Takuya Komoda
IPC分类号： H01L29/08 , H01L29/32
CPC分类号： H01L21/263 , H01L29/0834 , H01L29/32
摘要： A semiconductor device is formed with a high specific resistance zone between the anode and cathode zones on each side of the device, with a lattice defect zone in the anode zone in the vicinity of the high specific resistance zone. As a result, the turn-off time for the device can be sufficiently shortened, not only at normal temperatures, but at relatively high temperatures as well.
摘要翻译：半导体器件在器件的每一侧上的阳极区和阴极区之间形成具有高比电阻区，阳极区的晶格缺陷区在高电阻区附近。结果，不仅在正常温度下，而且在相对较高的温度下，可以充分缩短器件的关断时间。

7. 发明授权

US07898160B2 Method and apparatus for modifying object with electrons generated from cold cathode electron emitter 有权
标题翻译：用冷阴极电子发射体产生的电子修饰物体的方法和装置
公开(公告)号：US07898160B2
公开(公告)日：2011-03-01
申请号：US10572748
申请日：2004-11-25
申请人： Koichi Aizawa , Tsutomu Ichihara , Takuya Komoda , Jyunji Ikeda , Toru Baba
发明人： Koichi Aizawa , Tsutomu Ichihara , Takuya Komoda , Jyunji Ikeda , Toru Baba
IPC分类号： H01J9/02
CPC分类号： G21K5/04 , B82Y10/00 , H01J1/308 , H01J1/312 , H01J37/073 , H01J37/30
摘要： Apparatus and method for modifying an object with electrons are provided, by which the object can be uniformly and efficiently modified with the electrons under a pressure substantially equal to atmospheric pressure even when having a relatively wide surface area to be treated. This method uses a cold-cathode electron emitter having the capability of emitting electrons from a planar electron emitting portion according to tunnel effect, and preferably comprising a pair of electrodes, and a strong field drift layer including nanocrystalline silicon disposed between the electrodes. The object is exposed to electrons emitted from the planar electron emitting portion by applying a voltage between the electrodes.
摘要翻译：提供了用电子修饰物体的装置和方法，通过该装置和方法，即使具有相对较宽的待处理表面积，物体也可以在基本上等于大气压的压力下用电子均匀有效地修改。该方法使用具有根据隧道效应从平面电子发射部分发射电子的能力的冷阴极电子发射体，并且优选地包括一对电极，以及包括设置在电极之间的纳米晶硅的强场漂移层。该物体通过在电极之间施加电压而暴露于从平面电子发射部分发射的电子。

8. 发明授权

US07829907B2 Organic light emitting element and method of manufacturing the same 有权
标题翻译：有机发光元件及其制造方法
公开(公告)号：US07829907B2
公开(公告)日：2010-11-09
申请号：US12067718
申请日：2006-09-21
申请人： Nobuhiro Ide , Takuya Komoda , Junji Kido
发明人： Nobuhiro Ide , Takuya Komoda , Junji Kido
IPC分类号： H01L33/00
CPC分类号： H01L27/3209 , H01L51/0056 , H01L51/006 , H01L51/5268
摘要： The present invention relates to an organic light emitting element comprising: a first light emitting unit comprising a light emitting layer between a pair of electrodes; and a second light emitting unit comprising a light emitting layer between a pair of electrodes. In the organic light emitting element, one electrode of the two pairs of electrodes which is positioned on the outermost side has light reflective properties, and the other electrodes have light transmission properties, while a light-transmitting insulating layer is provided between the first and second light emitting units. The insulating layer is formed in a thickness to prevent light emitted by the light emitting layer of the light emitting unit without the light reflective electrode from interfering with other lights, or formed to have properties of scattering the emitted light. Thus, the interference between the lights emitted by the light emitting layers and the other lights is reduced, so that in the organic light emitting element, the angular dependence of light emission spectrum is small, making it possible to adjust color.
摘要翻译：本发明涉及一种有机发光元件，包括：第一发光单元，包括在一对电极之间的发光层; 以及包括在一对电极之间的发光层的第二发光单元。在有机发光元件中，位于最外侧的两对电极的一个电极具有光反射特性，另一个电极具有透光性，而在第一和第二电极之间设置透光绝缘层发光单元。形成绝缘层的厚度，以防止发光单元的发光层发出的光没有光反射电极干扰其他光，或者形成为具有使发射光散射的性质。因此，由发光层发射的光和其他光之间的光线之间的干涉减小，使得在有机发光元件中，发光光谱的角度依赖性小，使得可以调节颜色。

9. 发明申请

US20090230415A1 ORGANIC LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机发光元件及其制造方法
公开(公告)号：US20090230415A1
公开(公告)日：2009-09-17
申请号：US12067718
申请日：2006-09-21
申请人： Nobuhiro Ide , Takuya Komoda , Junji Kido
发明人： Nobuhiro Ide , Takuya Komoda , Junji Kido
IPC分类号： H01L33/00 , H01L21/28
CPC分类号： H01L27/3209 , H01L51/0056 , H01L51/006 , H01L51/5268
摘要： The present invention relates to an organic light emitting element comprising: a first light emitting unit comprising a light emitting layer between a pair of electrodes; and a second light emitting unit comprising a light emitting layer between a pair of electrodes. In the organic light emitting element, one electrode of the two pairs of electrodes which is positioned on the outermost side has light reflective properties, and the other electrodes have light transmission properties, while a light-transmitting insulating layer is provided between the first and second light emitting units. The insulating layer is formed in a thickness to prevent light emitted by the light emitting layer of the light emitting unit without the light reflective electrode from interfering with other lights, or formed to have properties of scattering the emitted light. Thus, the interference between the lights emitted by the light emitting layers and the other lights is reduced, so that in the organic light emitting element, the angular dependence of light emission spectrum is small, making it possible to adjust color.
摘要翻译：本发明涉及一种有机发光元件，包括：第一发光单元，包括在一对电极之间的发光层; 以及包括在一对电极之间的发光层的第二发光单元。在有机发光元件中，位于最外侧的两对电极的一个电极具有光反射特性，另一个电极具有透光性，而在第一和第二电极之间设置透光绝缘层发光单元。形成绝缘层的厚度，以防止发光单元的发光层发出的光没有光反射电极干扰其他光，或者形成为具有使发射光散射的性质。因此，由发光层发射的光和其他光之间的光线之间的干涉减小，使得在有机发光元件中，发光光谱的角度依赖性小，使得可以调节颜色。

10. 发明授权

US07569124B2 Anodic oxidation apparatus 失效
标题翻译：阳极氧化装置
公开(公告)号：US07569124B2
公开(公告)日：2009-08-04
申请号：US10924830
申请日：2004-08-25
申请人： Yasushi Yagi , Mitsuru Ushijima , Yoshifumi Watabe , Takuya Komoda , Koichi Aizawa
发明人： Yasushi Yagi , Mitsuru Ushijima , Yoshifumi Watabe , Takuya Komoda , Koichi Aizawa
IPC分类号： C25D17/00 , C25D11/02
CPC分类号： C25D11/02 , C25D11/005 , C25D11/32 , C25F3/12 , C25F3/14 , C25F7/00 , H01L21/02203 , H01L21/02238 , H01L21/02258 , H01L21/3167 , H01L21/31675 , Y10S204/07
摘要： In an anodic oxidation apparatus and an anodic oxidation method and a panel for a display device manufactured by them, a large target substrate is treated by a smaller component. The anodic oxidation apparatus includes a lamp which emits light; a treatment bath which has a stage capable of mounting a target substrate thereon with a treatment part thereof directed upward and is provided at a position where the emitted light reaches and a frame located on the stage; a cathode electrode which is provided on the way of the emitted light to reach the mounted target substrate and includes an opening to allow the light to pass therethrough; a seal member which establishes a liquid sealing property between the frame and the mounted target substrate; a conductive contact member which is provided to be contactable with a plurality of electrode patterns formed on the target substrate outside an annular shape of the seal member and moves along side of the target substrate; and a current source which is electrically connected to the contact member and sets an output current value in accordance with the number of electrode patterns of the mounted target substrate in contact as the contact member moves.
摘要翻译：在阳极氧化装置和阳极氧化法以及由它们制造的显示装置的面板中，通过较小的成分处理大的靶基板。阳极氧化装置包括发光的灯; 处理槽，其具有能够在其上安装目标基板的台阶，其处理部分向上指向并设置在发射光到达的位置和位于台上的框架; 阴极，其设置在所发射的光的路上，以到达所安装的目标基板，并且包括允许光通过的开口; 密封构件，其在所述框架和所安装的目标基板之间建立液体密封性; 导电接触构件，其设置成可与形成在所述目标基板上的多个电极图案接触，所述多个电极图案位于所述密封构件的环形形状的外侧，并且沿着所述目标基板的侧面移动; 以及电流源，其电连接到所述接触构件，并且当所述接触构件移动时，根据所接触的安装的目标衬底的电极图案的数量设定输出电流值。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式