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    • 3. 发明授权
    • Field emission-type electron source and manufacturing method thereof
    • 场致发射型电子源及其制造方法
    • US06765342B1
    • 2004-07-20
    • US09688869
    • 2000-10-17
    • Yoshiaki HondaTsutomu IchiharaTakuya KomodaKoichi AizawaYoshifumi WatabeTakashi Hatai
    • Yoshiaki HondaTsutomu IchiharaTakuya KomodaKoichi AizawaYoshifumi WatabeTakashi Hatai
    • H01J130
    • B82Y10/00H01J1/312
    • A field emission-type electron source 10 includes an insulative substrate 11 in the form of a glass substrate having an electroconductive layer 8 formed thereon. A strong electrical field drift layer 6 in the form of an oxidized porous polycrystalline silicon layer is formed over the electroconductive layer 8. This electroconductive layer 8 includes a lower electroconductive film 8a, made of copper and formed on the insulative substrate 11, and an upper electroconductive film 8b made of aluminum and formed over the electroconductive film 8a. The strong electrical field drift layer 6 is formed by forming a polycrystalline silicon layer on the electroconductive layer 8, rendering the polycrystalline silicon layer to be porous and finally oxidizing it. The upper electroconductive film 8b has a property that reacts easily with silicon and, therefore, formation of an amorphous layer which would occur during formation of the polycrystalline silicon layer can be suppressed.
    • 场发射型电子源10包括形成有导电层8的玻璃基板形式的绝缘基板11。 在导电层8上形成氧化多孔多晶硅层形式的强电场漂移层6.该导电层8包括由铜制成的下部导电膜8a,并形成在绝缘基板11上, 由铝制成并形成在导电膜8a上的导电膜8b。 通过在导电层8上形成多晶硅层,形成强电场漂移层6,使多晶硅层多孔化,最终将其氧化。 上导电膜8b具有与硅反应容易的性质,因此可以抑制在形成多晶硅层期间发生的非晶层的形成。
    • 4. 发明授权
    • Field emission type electron source
    • 场发射型电子源
    • US06707061B2
    • 2004-03-16
    • US10048478
    • 2002-07-22
    • Takuya KomodaYoshiaki HondaKoichi AizawaTsutomu IchiharaYoshifumi WatabeTakashi HataiToru Baba
    • Takuya KomodaYoshiaki HondaKoichi AizawaTsutomu IchiharaYoshifumi WatabeTakashi HataiToru Baba
    • H01L2912
    • B82Y10/00H01J1/312H01J2329/00
    • In a field emission-type electron source (10), lower electrodes (8) made of an electroconductive layer, a strong field drift layer (6) including drift portions (6a) made of an oxidized or nitrided porous semiconductor, and surface electrodes (7) made of a metal layer are provided on an upper side of a dielectric substrate (11) made of glass. When voltage is applied to cause the surface electrodes (7) to be anodic with respect to the lower electrodes (8), electrons injected from the lower electrodes (8) to the strong field drift layer (6) are led to drift through the strong field drift layer (6) and are emitted outside through the surface electrodes (7). A pn-junction semiconductor layer composed of an n-layer (21) and a p-layer (22) is provided between the lower electrode (8) and the strong field drift layer (6) to prevent a leakage current from flowing to the surface electrode (7) from the lower electrode (8), thereby reducing amount of power consumption.
    • 在场致发射型电子源(10)中,由导电层制成的下电极(8)包括由氧化或氮化多孔半导体制成的漂移部分(6a)的强场漂移层(6)和表面电极 7)由金属层制成,设置在由玻璃制成的电介质基板(11)的上侧。 当施加电压以使表面电极(7)相对于下电极(8)呈阳极时,从下电极(8)注入的强电场漂移层(6)的电子通过强电场 场漂移层(6),并通过表面电极(7)发射到外部。 在下电极(8)和强场漂移层(6)之间设置由n层(21)和p层(22)构成的pn结半导体层,以防止漏电流流向 表面电极(7),从而减少功耗。
    • 5. 发明授权
    • Field emission-type electron source and manufacturing method thereof
    • 场致发射型电子源及其制造方法
    • US06583578B1
    • 2003-06-24
    • US09688874
    • 2000-10-17
    • Tsutomu IchiharaTakuya KomodaKoichi AizawaYoshiaki HondaYoshifumi WatabeTakashi Hatai
    • Tsutomu IchiharaTakuya KomodaKoichi AizawaYoshiaki HondaYoshifumi WatabeTakashi Hatai
    • G09G310
    • B82Y10/00H01J1/312H01J9/022
    • An electron source (10) is provided with an n-type silicon substrate (1) as a conductive substrate, a drift layer (6) composed of oxidized porous polycrystalline silicon which is formed on the main surface of the silicon substrate (1), and a surface electrode (7) as a conductive thin film formed on the drift layer (6). The process for, forming the surface electrode (7) includes the steps of forming a first layer composed of Cr on the drift layer (6), forming a second layer composed of Au on the first layer, and alloying the two layers. The surface electrode (7) has higher adhesion for the drift layer 6 and/or stability for the lapse of time. In addition, the surface electrode (7) has lower density of states in an energy region near energy of emitted electrons, in comparison with the simple substance of Cr. In the surface electrode (7), scattering of the electrons is less so that electron emitting efficiency is higher.
    • 电子源(10)设置有作为导电基板的n型硅基板(1),形成在硅基板(1)的主表面上的由氧化多孔多晶硅构成的漂移层(6) 以及形成在漂移层(6)上的作为导电薄膜的表面电极(7)。 形成表面电极(7)的工艺包括以下步骤:在漂移层(6)上形成由Cr构成的第一层,在第一层上形成由Au构成的第二层,并使两层合金化。 表面电极(7)对于漂移层6具有较高的粘附力和/或经过时间的稳定性。 此外,与Cr的单质相比,表面电极(7)在发射电子能量附近的能量区域具有较低的状态密度。 在表面电极(7)中,电子的散射较小,电子发射效率较高。
    • 10. 发明授权
    • Field emission-type electron source and manufacturing method thereof
    • 场致发射型电子源及其制造方法
    • US06498426B1
    • 2002-12-24
    • US09557916
    • 2000-04-21
    • Yoshifumi WatabeYukihiro KondoKoichi AizawaTakuya KomodaYoshiaki HondaTakashi HataiTsutomu IchiharaNobuyoshi Koshida
    • Yoshifumi WatabeYukihiro KondoKoichi AizawaTakuya KomodaYoshiaki HondaTakashi HataiTsutomu IchiharaNobuyoshi Koshida
    • H01J100
    • B82Y10/00H01J1/304H01J1/312H01J9/025
    • A field emission-type electron source (10) is provided with a conductive substrate (1), a semiconductor layer formed on a surface of the conductive substrate (1), at least a part of the semiconductor layer being made porous, and a conductive thin film (7) formed on the semiconductor layer. Electrons injected into the conductive substrate (1) are emitted from the conductive thin film (7) through the semiconductor layer by applying a voltage between the conductive thin film (7) and the conductive substrate (1) in such a manner that the conductive thin film (7) acts as a positive electrode against the conductive substrate (1). The semiconductor layer includes a porous semiconductor layer (6) in which columnar structures (21) and porous structures (25) composed of fine semiconductor crystals of nanometer scale coexist, a surface of each of the structures being covered with an insulating film (22,24). Further, an average dimension of each of the porous structures (25) in a thickness direction of the semiconductor layer is smaller than or equal to 2 &mgr;m.
    • 场发射型电子源(10)设置有导电基板(1),形成在导电基板(1)的表面上的半导体层,半导体层的至少一部分被制成多孔的导电基板 形成在半导体层上的薄膜(7)。 通过在导电薄膜(7)和导电性基板(1)之间施加电压,使导电性薄膜(7)的导电性薄膜(7)通过半导体层从导电性薄膜(7)射出, 膜(7)用作抵靠导电基板(1)的正电极。 半导体层包括多孔半导体层(6),其中由纳米级微细半导体晶体构成的柱状结构(21)和多孔结构(25)共存,每个结构的表面被绝缘膜(22, 24)。 此外,半导体层的厚度方向上的多孔结构体(25)的平均尺寸小于或等于2μm。