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1. 发明申请

US20120231265A1 TRANSPARENT FILM AND USE THEREOF 有权
标题翻译：透明膜及其使用
公开(公告)号：US20120231265A1
公开(公告)日：2012-09-13
申请号：US13383656
申请日：2010-07-09
申请人： Hiromoto Haruta , Hirokazu Matsuda , Tsuyoshi Inoue , Kazuhito Okumura , Osamu Kondo , Yoko Muraoka
发明人： Hiromoto Haruta , Hirokazu Matsuda , Tsuyoshi Inoue , Kazuhito Okumura , Osamu Kondo , Yoko Muraoka
IPC分类号： B32B27/00
CPC分类号： B32B27/08 , C09J7/29 , C09J2201/606 , G02B1/10 , G02B1/105 , G02B1/14 , G02B1/16 , Y10T428/26
摘要： A transparent film, the back-face of which has excellent resistance to scratch and printability, and a surface protection film which has such a transparent film are provided. A transparent film 10 has a substrate layer 12 formed of a transparent resin material, and a back-face layer 14 with a thickness of 1 μm or less provided on a first face 12A thereof. A percent change in coefficient of friction Δμ is less than 10% for the transparent film 10 when the percent change is determined from a coefficient of friction μ50 of the back-face layer after being conserved at 50° C. and 15% RH for three days and a coefficient of friction μ80 of the back-face layer after being conserved at 80° C. and 80% RH for three days, with an absolute value of difference between the two coefficients of friction |μ80−μ50| being divided by the smaller value of the two coefficients of friction.
摘要翻译：其背面具有优异的耐擦伤性和可印刷性的透明膜，以及具有这种透明膜的表面保护膜。透明膜10具有由透明树脂材料形成的基底层12和设置在其第一面12A上的厚度为1μm以下的背面层14。当在50℃和15％RH保存后，背面层的摩擦系数μ50确定百分比变化时，透明膜10的摩擦系数Dgr;μ的百分比变化小于10％在80℃和80％RH保存3天后，背面层的摩擦系数μ80为摩擦系数μ80，两摩擦系数之间的绝对值为|μ80-μ50| 除以两个摩擦系数的较小值。

2. 发明授权

US09321247B2 Transparent film and use thereof 有权
标题翻译：透明膜及其用途
公开(公告)号：US09321247B2
公开(公告)日：2016-04-26
申请号：US13383656
申请日：2010-07-09
申请人： Hiromoto Haruta , Hirokazu Matsuda , Tsuyoshi Inoue , Kazuhito Okumura , Osamu Kondo , Yoko Muraoka
发明人： Hiromoto Haruta , Hirokazu Matsuda , Tsuyoshi Inoue , Kazuhito Okumura , Osamu Kondo , Yoko Muraoka
IPC分类号： B32B27/08 , G02B1/10 , C09J7/02
CPC分类号： B32B27/08 , C09J7/29 , C09J2201/606 , G02B1/10 , G02B1/105 , G02B1/14 , G02B1/16 , Y10T428/26
摘要： A transparent film, the back-face of which has excellent resistance to scratch and printability, and a surface protection film which has such a transparent film are provided. A transparent film 10 has a substrate layer 12 formed of a transparent resin material, and a back-face layer 14 with a thickness of 1 μm or less provided on a first face 12A thereof. A percent change in coefficient of friction Δμ is less than 10% for the transparent film 10 when the percent change is determined from a coefficient of friction μ50 of the back-face layer after being conserved at 50° C. and 15% RH for three days and a coefficient of friction μ80 of the back-face layer after being conserved at 80° C. and 80% RH for three days, with an absolute value of difference between the two coefficients of friction |μ80−μ50| being divided by the smaller value of the two coefficients of friction.
摘要翻译：其背面具有优异的耐擦伤性和可印刷性的透明膜，以及具有这种透明膜的表面保护膜。透明膜10具有由透明树脂材料形成的基底层12和设置在其第一面12A上的厚度为1μm以下的背面层14。当在50℃和15％RH保存后，背面层的摩擦系数μ50确定百分比变化时，透明膜10的摩擦系数Dgr;μ的百分比变化小于10％在80℃和80％RH保存3天后，背面层的摩擦系数μ80为摩擦系数μ80，两摩擦系数之间的绝对值为|μ80-μ50| 除以两个摩擦系数的较小值。

3. 发明申请

US20120064339A1 PRESSURE-SENSITIVE ADHESIVE COMPOSITION FOR SURFACE PROTECTIVE FILMS AND USE THEREOF 审中-公开
标题翻译：用于表面保护膜的压敏粘合剂组合物及其用途
公开(公告)号：US20120064339A1
公开(公告)日：2012-03-15
申请号：US13203331
申请日：2010-02-22
申请人： Masato Yamagata , Natsuki Ukei , Kenichi Kataoka , Kenjiro Niimi , Hiromoto Haruta , Junko Nakano , Tsuyoshi Inoue
发明人： Masato Yamagata , Natsuki Ukei , Kenichi Kataoka , Kenjiro Niimi , Hiromoto Haruta , Junko Nakano , Tsuyoshi Inoue
IPC分类号： C09J7/02 , C09J133/08
CPC分类号： C09J171/02 , C08L33/08 , C08L71/02 , C08L2666/04 , C08L2666/22 , C09J133/08 , Y10T428/2891
摘要： The present invention provides a surface protective film that exhibits small differences in peel strength on account of the surface state of an adherend and that is excellent in anti-contamination to adherends, and a pressure-sensitive adhesive (PSA) composition for the protective film. The PSA composition provided by the present invention comprises 0.01 to 5 parts by weight of a compound containing an oxypropylene group with respect to 100 parts by weight of an acrylic polymer as a base polymer. A surface protective film 10 provided by the present invention has a PSA layer 2, formed using the above PSA composition, on one or both sides of a support 1.
摘要翻译：本发明提供一种表面保护膜，其由于被粘物的表面状态而显示出剥离强度的差异小，并且对被粘物的抗污染性优异，而且用于保护膜的压敏粘合剂（PSA）组合物。本发明提供的粘合剂组合物相对于作为基础聚合物的丙烯酸类聚合物100重量份，含有0.01〜5重量份的含有氧化丙烯基的化合物。由本发明提供的表面保护膜10在支撑体1的一侧或两侧上具有使用上述粘合剂组合物形成的粘合剂层2。

4. 发明授权

US08480843B2 Protective film 失效
标题翻译：保护膜
公开(公告)号：US08480843B2
公开(公告)日：2013-07-09
申请号：US11750607
申请日：2007-05-18
申请人： Tsuyoshi Inoue , Kazuhito Okumura , Hiroshi Yada
发明人： Tsuyoshi Inoue , Kazuhito Okumura , Hiroshi Yada
IPC分类号： C04B37/00 , B32B7/12 , B32B15/04
CPC分类号： H01J17/04 , C09J7/38 , C09J7/385 , H01J2211/446 , H05K9/0096 , Y10T428/12465 , Y10T428/28 , Y10T428/2804 , Y10T428/2843 , Y10T428/2848 , Y10T428/2857
摘要： A process for protecting a surface of a metal layer or a metal oxide layer including providing a protective film containing a base material and a pressure-sensitive adhesive layer formed thereon, wherein the surface of the pressure-sensitive adhesive layer has a contact angle with methylene iodide as measured just after contact, θ1, of 70° or smaller and a change in contact angle with methylene iodide through 30-second standing, Δθ, of 8% or less.
摘要翻译：一种用于保护金属层或金属氧化物层的表面的方法，包括提供含有形成在其上的基材和压敏粘合剂层的保护膜，其中压敏粘合剂层的表面与亚甲基具有接触角接触后测量的碘化物，θ1为70°或更小，与二氯甲烷的接触角随着30秒的静置，Deltatheta的变化，为8％或更低。

5. 发明申请

US20070215275A1 PROTECTIVE FILM 失效
标题翻译：保护膜
公开(公告)号：US20070215275A1
公开(公告)日：2007-09-20
申请号：US11750607
申请日：2007-05-18
申请人： Tsuyoshi Inoue , Kazuhito Okumura , Hiroshi Yada
发明人： Tsuyoshi Inoue , Kazuhito Okumura , Hiroshi Yada
IPC分类号： B32B27/00
CPC分类号： H01J17/04 , C09J7/38 , C09J7/385 , H01J2211/446 , H05K9/0096 , Y10T428/12465 , Y10T428/28 , Y10T428/2804 , Y10T428/2843 , Y10T428/2848 , Y10T428/2857
摘要： A process for protecting a surface of a metal layer or a metal oxide layer including providing a protective film containing a base material and a pressure-sensitive adhesive layer formed thereon, wherein the surface of the pressure-sensitive adhesive layer has a contact angle with methylene iodide as measured just after contact, θ1, of 70° or smaller and a change in contact angle with methylene iodide through 30-second standing, Δθ, of 8% or less.
摘要翻译：一种用于保护金属层或金属氧化物层的表面的方法，包括提供含有形成在其上的基材和压敏粘合剂层的保护膜，其中压敏粘合剂层的表面与亚甲基具有接触角碘化物，接触后测量的角度为70°或更小，并且与二碘甲烷的接触角随着30秒的静置，Deltatheta的变化，为8％或更低。

6. 发明授权

US09395709B2 Utilization-time changing support device and method of supporting change in utilization time 有权
标题翻译：利用时间变化支持设备及其支持变更利用时间的方法
公开(公告)号：US09395709B2
公开(公告)日：2016-07-19
申请号：US13396693
申请日：2012-02-15
申请人： Jun Ozawa , Tsuyoshi Inoue
发明人： Jun Ozawa , Tsuyoshi Inoue
IPC分类号： G05B15/02
CPC分类号： G05B15/02
摘要： Provided is a utilization-time changing support device including: a household-electrical-appliance power record storage unit storing records of power consumption for each household electrical appliance used in a living space; a power record writing unit receiving information indicating the power consumption of the household electrical appliance from a measuring device that measures the power consumption, and writing, into the household-electrical-appliance power record storage unit, a record of the information as one of the records of the power consumption; a regular use determining unit determining whether or not the household electrical appliance used during a predetermined period is regularly used, based on the records of the power consumption; and a period change possibility determining unit outputting (i) whether or not a utilization period of the household electrical appliance can be changed and (ii) another utilization period as a result of the determination, based on the records of the power consumption.
摘要翻译：本发明提供一种利用时间变更支援装置，具备：家用电力记录存储单元，存储在生活空间中使用的各家用电器的电力消耗记录; 电力记录写入单元，从测量功率的测量装置接收表示家用电器的功耗的信息，并将该信息的记录写入家用电器功率记录存储单元功耗记录; 基于功耗记录，定期使用确定单元，确定在预定时段期间使用的家用电器是否经常使用; 以及周期变化可能性确定单元，输出（i）是否可以改变家用电器的使用期限，以及（ii）作为所述确定的结果的另一利用期间，基于所述功耗的记录。

7. 发明授权

US09182216B2 Method for observing protein crystal 有权
标题翻译：观察蛋白质晶体的方法
公开(公告)号：US09182216B2
公开(公告)日：2015-11-10
申请号：US13825280
申请日：2011-09-20
申请人： Norihiko Nishizawa , Hiroyoshi Matsumura , Yuusuke Mori , Shutaro Ishida , Kazuyoshi Itoh , Shigeru Sugiyama , Hiroaki Adachi , Tsuyoshi Inoue , Kazufumi Takano , Murakami Satoshi
发明人： Norihiko Nishizawa , Hiroyoshi Matsumura , Yuusuke Mori , Shutaro Ishida , Kazuyoshi Itoh , Shigeru Sugiyama , Hiroaki Adachi , Tsuyoshi Inoue , Kazufumi Takano , Murakami Satoshi
IPC分类号： G01B9/02 , G01N21/47 , C07K1/30 , G01N21/17
CPC分类号： G01B9/02091 , C07K1/306 , G01N21/4795 , G01N2021/1787
摘要： Provided are a method for observing protein crystal, wherein the growth process of the protein crystals is nondestructively and three-dimensionally monitored on a real-time basis and the growth of the crystals is controlled at a high accuracy to thereby enable the formation of single crystals having good qualities, which comprises observing the protein crystals, said protein crystals having been produced by a crystallization method using a gel, by an OCT measurement using light emitted from an ultrawideband light source;a method for observing protein crystals wherein the ultrawideband light source is an ultrawideband supercontinuum light source;a method for observing protein crystals wherein the center wavelength of the light emitted from the ultrawideband supercontinuum light source is a 0.8 μm band; anda method for observing protein crystals wherein the monitoring of the protein crystals is a monitoring by an in situ measurement.
摘要翻译：提供了一种用于观察蛋白质晶体的方法，其中蛋白质晶体的生长过程以实时的方式非破坏性和三维地监测，并且以高精度控制晶体的生长，从而能够形成单晶具有良好的质量，其包括通过使用从超宽带光源发射的光的OCT测量观察蛋白质晶体，所述蛋白质晶体是通过使用凝胶的结晶方法产生的; 一种观察蛋白质晶体的方法，其中超宽带光源是超宽带超连续光源; 观察从超宽带超连续光源发射的光的中心波长为0.8μm波段的蛋白质晶体的方法; 以及观察蛋白质晶体的方法，其中蛋白质晶体的监测是通过原位测量的监测。

8. 发明授权

US09035295B2 Thin film transistor having an oxide semiconductor thin film formed on a multi-source drain electrode 有权
标题翻译：在多源极电极上形成氧化物半导体薄膜的薄膜晶体管
公开(公告)号：US09035295B2
公开(公告)日：2015-05-19
申请号：US13640868
申请日：2011-04-05
申请人： Okifumi Nakagawa , Yoshifumi Ohta , Yoshimasa Chikama , Tsuyoshi Inoue , Masahiko Suzuki , Michiko Takei , Yoshiyuki Harumoto , Yoshinobu Miyamoto , Hinae Mizuno
发明人： Okifumi Nakagawa , Yoshifumi Ohta , Yuuji Mizuno , Yoshimasa Chikama , Tsuyoshi Inoue , Masahiko Suzuki , Michiko Takei , Yoshiyuki Harumoto , Yoshinobu Miyamoto
IPC分类号： H01L29/12 , H01L29/10 , H01L29/76 , H01L21/00 , H01L29/786 , H01L27/12 , H01L29/66
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/66742
摘要： A semiconductor device (100A) according to the present invention includes an oxide semiconductor layer (31a), first and second source electrodes (52a1 and 52a2), and first and second drain electrodes (53a1 and 53a2). The second source electrode (52a2) is formed to be in contact with a top surface of the first source electrode and inner to the first source electrode (52a1). The second drain electrode (53a2) is formed to be in contact with a top surface of the first drain electrode (53a1) and inner to the first drain electrode (53a1). The oxide semiconductor layer (31a) is formed to be in contact with the top surface of the first source electrode (52a1) and the top surface of the first drain electrode (53a1).
摘要翻译：根据本发明的半导体器件（100A）包括氧化物半导体层（31a），第一和第二源电极（52a1和52a2）以及第一和第二漏电极（53a1和53a2）。第二源电极（52a2）形成为与第一源电极的顶表面接触并且在第一源电极（52a1）内部。第二漏电极（53a2）形成为与第一漏电极（53a1）的顶表面接触并且在第一漏极电极（53a1）的内部。氧化物半导体层（31a）形成为与第一源电极（52a1）的顶表面和第一漏电极（53a1）的顶表面接触。

9. 发明授权

US08438479B2 Operation support apparatus and method of the same 失效
标题翻译：操作支援装置及方法相同
公开(公告)号：US08438479B2
公开(公告)日：2013-05-07
申请号：US12865919
申请日：2009-10-22
申请人： Tsuyoshi Inoue , Jun Ozawa
发明人： Tsuyoshi Inoue , Jun Ozawa
IPC分类号： G06F3/00
CPC分类号： G11B27/32 , G06F3/04895 , G06F9/453 , G11B27/34 , H04N5/4403 , H04N5/44543 , H04N21/4147 , H04N21/42204 , H04N21/4334 , H04N21/44222 , H04N21/4667 , H04N21/47214 , H04N21/482
摘要： The operation support apparatus includes: an operation load calculation unit (106) which calculates an operation load on a user in performing a selecting operation included in one of operation records, using the selecting operation and a previous selecting operation included in another one of the records, the calculation being performed for each of selecting operations included in the records; a non-thinking operation determination unit (107) which determines, for each selecting operation included in the records, whether or not it is a non-thinking operation that is a randomly-performed operation, by determining that the selecting operation is more likely to be the non-thinking operation when the operation load is smaller; and a target function inference unit (108) and a target function candidate storage unit (109) which provide the user with operation support based on the records of the selecting operations excluding the selecting operation determined as the non-thinking operation.
摘要翻译：操作支持装置包括：操作负载计算单元，其使用包括在另一个记录中的选择操作和先前的选择操作来计算用户执行包括在一个操作记录中的选择操作的操作负载对包括在记录中的每个选择操作执行计算; 一种非思考操作确定单元，其针对包括在记录中的每个选择操作确定是否是作为随机执行的操作的非思维操作，通过确定选择操作更可能当操作负载较小时，是非思维操作; 以及目标函数推断单元（108）和目标函数候选存储单元（109），其基于除了被选择为非思考操作的选择操作之外的选择操作的记录来向用户提供操作支持。

10. 发明申请

US20130105802A1 THIN FILM TRANSISTOR, DISPLAY DEVICE, AND MANUFACTURING METHOD FOR THIN FILM TRANSISTOR AND DISPLAY DEVICE 有权
标题翻译：薄膜晶体管，显示装置和薄膜晶体管和显示装置的制造方法
公开(公告)号：US20130105802A1
公开(公告)日：2013-05-02
申请号：US13518566
申请日：2010-12-21
申请人： Yoshiyuki Harumoto , Takeshi Hara , Tohru Okabe , Takeshi Yaneda , Tetsuya Aita , Tsuyoshi Inoue , Michiko Takei
发明人： Yoshiyuki Harumoto , Takeshi Hara , Tohru Okabe , Takeshi Yaneda , Tetsuya Aita , Tsuyoshi Inoue , Michiko Takei
IPC分类号： H01L29/786 , H01L33/08 , H01L29/66
CPC分类号： H01L29/786 , H01L29/04 , H01L29/6675 , H01L29/66765 , H01L29/78609 , H01L29/78618 , H01L29/78678 , H01L29/78696 , H01L33/08
摘要： The present invention has an object of providing a TFT in which generation of an OFF current is reduced by an efficient manufacturing method. A thin film transistor 100 according to the present invention has a gate electrode 12 formed on a substrate 10, an insulating layer 14 formed on the gate electrode 12, a microcrystalline amorphous silicon layer 18 and an amorphous silicon layer 16 that are formed on the insulating layer 14, a semiconductor layer 20 containing an impurity formed on the amorphous silicon layer 16, and a source electrode 22A and a drain electrode 22B that are formed on the semiconductor layer 20 containing an impurity. The microcrystalline amorphous silicon layer 18 and the semiconductor layer 20 containing an impurity are connected to each other through the amorphous silicon layer 16 without being in direct contact with each other.
摘要翻译：本发明的目的是提供一种通过有效的制造方法来减少OFF电流的产生的TFT。根据本发明的薄膜晶体管100具有形成在基板10上的栅电极12，形成在栅电极12上的绝缘层14，形成在绝缘层上的微晶非晶硅层18和非晶硅层16。层14，包含形成在非晶硅层16上的杂质的半导体层20以及形成在包含杂质的半导体层20上的源电极22A和漏极22B。含有杂质的微晶非晶硅层18和半导体层20通过非晶硅层16彼此连接而不直接接触。

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