专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07106775B2 Semiconductor laser devices 有权
标题翻译：半导体激光器件
公开(公告)号：US07106775B2
公开(公告)日：2006-09-12
申请号：US10791889
申请日：2004-03-04
申请人： Hiromasu Matsuoka , Yasuhiro Kunitsugu , Harumi Nishiguchi , Tetsuya Yagi , Yasuyuki Nakagawa , Junichi Horie
发明人： Hiromasu Matsuoka , Yasuhiro Kunitsugu , Harumi Nishiguchi , Tetsuya Yagi , Yasuyuki Nakagawa , Junichi Horie
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , H01S5/0287
摘要： A low reflective film is formed of, in sequence from a side in contact with a laser chip, a first dielectric film of a refractive index n1 and a thickness d1, a second dielectric film of a refractive index n2 and a thickness d2, a third dielectric film of a refractive index n3 and a thickness d3, and a fourth dielectric film of a refractive index n4 and a thickness d4, specifically, aluminum oxide Al2O3 with a refractive index n1=1.638 is used for the first dielectric film, silicon oxide SiO2 with a refractive index n2=n4=1.489 for the second and fourth dielectric films, tantalum oxide Ta2O5 with a refractive index n3=2.063 for the third dielectric film, respectively, resulting in a semiconductor laser device with a reflectance which is stably controllable.
摘要翻译：低反射膜依次由与激光芯片接触的一侧形成，折射率n 1和厚度d 1的第一介电膜，折射率n 2的第二介电膜和厚度d 2，折射率n 3和厚度d 3的第三电介质膜和折射率n 4和厚度d 4的第四电介质膜，具体地，氧化铝Al 2 O 3，对于第一电介质膜使用折射率n 1 = 1.638的SUB> 3 ，第二和第四层的折射率n 2 = n 4 = 1.489的氧化硅SiO 2 介电膜，氧化钽Ta 2 O 3，折射率n 3 = 2.063，分别为第三绝缘膜，得到反射率为稳定可控

2. 发明申请

US20080273556A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 失效
标题翻译：半导体发光器件
公开(公告)号：US20080273556A1
公开(公告)日：2008-11-06
申请号：US12022194
申请日：2008-01-30
申请人： Harumi Nishiguchi , Hiromasu Matsuoka , Yasuyuki Nakagawa , Yasuhiro Kunitsugu
发明人： Harumi Nishiguchi , Hiromasu Matsuoka , Yasuyuki Nakagawa , Yasuhiro Kunitsugu
IPC分类号： H01S5/028
CPC分类号： H01S5/028 , H01S5/0283 , H01S5/0287
摘要： A semiconductor light-emitting device includes a light generation unit generating light with an oscillation wavelength λ, a light outgoing facet from which light generated at the light generation unit emerges, a light reflecting facet at which light generated at the light generation unit is reflected, and a high reflection film at the light reflecting facet and made of a dielectric multilayered film of at least three layers. The high reflection film includes a first layer which is in contact with the light reflection facet, is constituted of Al2O3, and has a thickness smaller than λ/4n, wherein n is the refractive index of Al2O3, a second layer which is in contact with the first layer, and a third layer which is in contact with the second layer and has a refractive index different from the refractive index of the second layer.
摘要翻译：半导体发光装置包括产生具有振荡波长λ的光的光产生单元，出现在发光单元处产生的光的光出射小面反射在光产生单元处产生的光的光反射小面，以及在光反射面处的高反射膜，并且由至少三层的电介质多层膜制成。高反射膜包括与光反射面接触的第一层，由Al 2 O 3 3 3构成，并且具有小于λ/ 4n的厚度，其中n是Al 2 O 3 3的折射率，与第一层接触的第二层和与第二层接触的第三层并且具有与第二层的折射率不同的折射率。

3. 发明授权

US07039085B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US07039085B2
公开(公告)日：2006-05-02
申请号：US10828267
申请日：2004-04-21
申请人： Yasuhiro Kunitsugu , Hiromasu Matsuoka , Yasuyuki Nakagawa , Harumi Nishiguchi
发明人： Yasuhiro Kunitsugu , Hiromasu Matsuoka , Yasuyuki Nakagawa , Harumi Nishiguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , H01S5/0287
摘要： A semiconductor laser device includes a dielectric multilayer film with a reflectance of 40% or more, on at least one of optical exit faces of a laser chip. The dielectric multilayer film includes a film of tantalum oxide (Ta2O5) and another film of a dielectric oxide, such as aluminum oxide (Al2O3), and silicon oxide (SiO2). The tantalum oxide film has an optical absorption coefficient smaller than that of silicon (Si) and thermal stability in emission superior to that of titanium oxide (TiO2), thereby remarkably improving the catastrophic optical damage degradation level of the laser chip.
摘要翻译：半导体激光装置包括在激光芯片的光学出射面的至少一个上具有40％以上的反射率的电介质多层膜。电介质多层膜包括氧化钽（Ta 2 O 5 5）的膜和电介质氧化物的另一膜，例如氧化铝（Al 2 O 3） SUB 3 O 3）和氧化硅（SiO 2/2）。氧化钽膜的光吸收系数小于硅（Si）的光吸收系数，并且发光的热稳定性优于二氧化钛（TiO 2），从而显着地改善了灾难性光学损伤降解水平激光芯片。

4. 发明授权

US07826507B2 Semiconductor laser device including highly reflective coating film 失效
标题翻译：半导体激光器件包括高反射涂膜
公开(公告)号：US07826507B2
公开(公告)日：2010-11-02
申请号：US12022194
申请日：2008-01-30
申请人： Harumi Nishiguchi , Hiromasu Matsuoka , Yasuyuki Nakagawa , Yasuhiro Kunitsugu
发明人： Harumi Nishiguchi , Hiromasu Matsuoka , Yasuyuki Nakagawa , Yasuhiro Kunitsugu
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , H01S5/0283 , H01S5/0287
摘要： A semiconductor light-emitting device includes a light generation unit generating light with an oscillation wavelength λ, a light outgoing facet from which light generated at the light generation unit emerges, a light reflecting facet at which light generated at the light generation unit is reflected, and a high reflection film at the light reflecting facet and made of a dielectric multilayered film of at least three layers. The high reflection film includes a first layer which is in contact with the light reflection facet, is constituted of Al2O3, and has a thickness smaller than λ/4n, wherein n is the refractive index of Al2O3, a second layer which is in contact with the first layer, and a third layer which is in contact with the second layer and has a refractive index different from the refractive index of the second layer.
摘要翻译：半导体发光装置包括产生具有振荡波长λ的光的光产生单元，出现在发光单元处产生的光的光出射小面反射在光产生单元处产生的光的光反射小面，以及在光反射面处的高反射膜，并且由至少三层的电介质多层膜制成。高反射膜包括与光反射面接触的第一层，由Al 2 O 3构成，并且具有小于λ/ 4n的厚度，其中n是Al 2 O 3的折射率，与Al 2 O 3接触的第二层第一层和与第二层接触并且具有与第二层的折射率不同的折射率的第三层。

5. 发明授权

US07796664B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US07796664B2
公开(公告)日：2010-09-14
申请号：US12348061
申请日：2009-01-02
申请人： Yasuyuki Nakagawa , Harumi Nishiguchi , Kyosuke Kuramoto , Masatsugu Kusunoki , Takeo Shirahama , Yosuke Suzuki , Hiromasu Matsuoka
发明人： Yasuyuki Nakagawa , Harumi Nishiguchi , Kyosuke Kuramoto , Masatsugu Kusunoki , Takeo Shirahama , Yosuke Suzuki , Hiromasu Matsuoka
IPC分类号： H01S5/00
CPC分类号： H01S5/32341 , H01S5/028
摘要： A GaN laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The optical film thickness of the second insulating film is an odd multiple of λ/4 with respect to the wavelength λ of laser light produced by the semiconductor laser. The adhesion of the first insulating film to GaN is stronger than the adhesion of the second insulating film to GaN. The refractive index of the second insulating film is 2 to 2.3 thick. The first insulating film is 10 nm or less. The first insulating film is an oxide film having a stoichiometric composition.
摘要翻译： GaN激光器包括在发射激光的前端表面上的涂膜。涂膜包括与前端表面接触的第一绝缘膜和第一绝缘膜上的第二绝缘膜。第二绝缘膜的光学膜厚度相对于由半导体激光器产生的激光的波长λ为λ/ 4的奇数倍。第一绝缘膜对GaN的附着力比第二绝缘膜对GaN的粘合强。第二绝缘膜的折射率为2〜2.3μm。第一绝缘膜为10nm以下。第一绝缘膜是具有化学计量组成的氧化膜。

6. 发明申请

US20090185595A1 SEMICONDUCTOR LASER 有权
标题翻译：半导体激光器
公开(公告)号：US20090185595A1
公开(公告)日：2009-07-23
申请号：US12348061
申请日：2009-01-02
申请人： Yasuyuki Nakagawa , Harumi Nishiguchi , Kyosuke Kuramoto , Masatsugu Kusunoki , Takeo Shirahama , Yosuke Suzuki , Hiromasu Matsuoka
发明人： Yasuyuki Nakagawa , Harumi Nishiguchi , Kyosuke Kuramoto , Masatsugu Kusunoki , Takeo Shirahama , Yosuke Suzuki , Hiromasu Matsuoka
IPC分类号： H01S5/028
CPC分类号： H01S5/32341 , H01S5/028
摘要： A GaN laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The optical film thickness of the second insulating film is an odd multiple of λ/4 with respect to the wavelength λ of laser light produced by the semiconductor laser. The adhesion of the first insulating film to GaN is stronger than the adhesion of the second insulating film; to GaN. The refractive index of the second insulating film is 2 to 2.3 thick. The first insulating film is 10 nm or less. The first insulating film is an oxide film having a stoichiometric composition.
摘要翻译： GaN激光器包括在发射激光的前端表面上的涂膜。涂膜包括与前端表面接触的第一绝缘膜和第一绝缘膜上的第二绝缘膜。第二绝缘膜的光学膜厚度相对于半导体激光器产生的激光的波长λ为λ/ 4的奇数倍。第一绝缘膜对GaN的附着力比第二绝缘膜的粘附强; 到GaN。第二绝缘膜的折射率为2〜2.3μm。第一绝缘膜为10nm以下。第一绝缘膜是具有化学计量组成的氧化膜。

7. 发明申请

US20070280307A1 SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译：半导体激光器件
公开(公告)号：US20070280307A1
公开(公告)日：2007-12-06
申请号：US11755818
申请日：2007-05-31
申请人： Yasuhiro Kunitsugu , Hiromasu Matsuoka
发明人： Yasuhiro Kunitsugu , Hiromasu Matsuoka
IPC分类号： H01S3/10 , H01S5/00 , H01S3/04
CPC分类号： H01S5/028 , H01S5/4087
摘要： A semiconductor laser device for emitting light at two wavelengths λ1 and λ2 comprises: a laser chip having a front end face and a rear end face; and a high reflectance film on the rear end face of the laser chip and including seven or more layers laminated one on top of another, the seven or more layers including a first layer and a last layer, the first layer being closest to the laser chip, the last layer being farthest from the laser chip. One or more of the seven or more layers of the high reflectance film, other than the first and last layers, has an optical thickness of n*λ/2, where n is a natural number and λ=(λ1+λ2)/2. All of the seven or more layers of the high reflectance film, other than the one or more layers and other than the last layer, have an optical thickness of (2n′+1)*λ/4, where n′ is 0 or a positive integer. The last layer of the high reflectance film has an optical thickness of n*λ/4.
摘要翻译：用于发射两个波长λ1和λ2的光的半导体激光器件包括：具有前端面和后端面的激光芯片; 以及在激光芯片的后端面上的高反射率膜，并且包括一个层叠在另一层上的七层以上的层，所述七层以上的层包括第一层和最后层，所述第一层最靠近所述激光芯片最后一层距离激光芯片最远。除了第一层和最后层之外，高反射率膜的七层或更多层的一个或多个具有n *λ/ 2的光学厚度，其中n是自然数，λ=（λ1 < / SUB> + lambda 2/2）。除了一层或多层，而不是最后一层以外，高反射率膜的所有7层或更多层具有（2n'+ 1）*λ/ 4的光学厚度，其中n'为0或者正整数。高反射率膜的最后一层具有n *λ/ 4的光学厚度。

8. 发明授权

US07616673B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07616673B2
公开(公告)日：2009-11-10
申请号：US11439276
申请日：2006-05-24
申请人： Hiromasu Matsuoka , Yasuyuki Nakagawa , Toshihiko Shiga
发明人： Hiromasu Matsuoka , Yasuyuki Nakagawa , Toshihiko Shiga
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , H01S5/0287
摘要： A semiconductor laser device includes a semiconductor laser body including a resonator and having a front end face and a rear end face facing each other, the resonator being located between the front end face and the rear end face. The front end face emits principal laser light. A reflectance control film is disposed on the front end face or the rear end face of the semiconductor laser body and is made up of either an aluminum oxide film or a five-layer film including the aluminum oxide film disposed such that it is the layer in the five-layer film farthest from the front end face or the rear end face. A silicon oxide film is disposed on the aluminum oxide film of the reflectance control film and has a thickness of 20 nm or less.
摘要翻译：半导体激光装置包括：包括谐振器的半导体激光器体，其前端面和后端面彼此面对，所述谐振器位于前端面和后端面之间。前端面发射主激光。反射控制膜设置在半导体激光体的前端面或后端面上，由氧化铝膜或包含氧化铝膜的五层膜构成，使其成为五层薄膜离前端面或后端面最远。氧化硅膜设置在反射控制膜的氧化铝膜上，厚度为20nm以下。

9. 发明授权

US07577173B2 Semiconductor laser device having a low reflection film of stable reflectance 有权
标题翻译：具有稳定反射率的低反射膜的半导体激光器件
公开(公告)号：US07577173B2
公开(公告)日：2009-08-18
申请号：US11938845
申请日：2007-11-13
申请人： Kazushige Kawasaki , Yasuyuki Nakagawa , Hiromasu Matsuoka
发明人： Kazushige Kawasaki , Yasuyuki Nakagawa , Hiromasu Matsuoka
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , H01S5/0287 , H01S5/32341
摘要： A semiconductor laser device comprises a GaN substrate having a refractive index of 3.5 or below, a semiconductor layer laminated on the substrate, and a pair of facets forming a resonator and in face-to-face-relation to each other in a direction perpendicular to the direction of the laminated layer. One of the facets of the resonator includes a low reflection film, of a first dielectric film, a second dielectric film, a third dielectric film, and a fourth dielectric film. When the refractive indexes of these films are taken as n1, n2, n3, and n4, n1=n3 and n2=n4. The following relationship between the first dielectric film and the third dielectric film, and between the second dielectric film and the fourth dielectric film is established, nd+n′d′=pλ/4, where p is an integer, and λ is oscillation wavelength of a laser beam generated by the semiconductor laser device.
摘要翻译：半导体激光装置包括折射率为3.5以下的GaN衬底，层叠在衬底上的半导体层和形成谐振器的一对面，并且在垂直于该衬底的方向上彼此面对面层压层的方向。谐振器的一个面包括第一电介质膜，第二电介质膜，第三电介质膜和第四电介质膜的低反射膜。当这些膜的折射率取为n1，n2，n3和n4时，n1 = n3，n2 = n4。建立第一电介质膜和第三电介质膜之间以及第二电介质膜和第四介电膜之间的以下关系，nd + n'd'=λ/ 4，其中p是整数，λ是振荡波长由半导体激光装置产生的激光束。

10. 发明申请

US20080205468A1 SEMICONDUCTOR LASER DEVICE HAVING A LOW REFLECTION FILM OF STABLE REFLECTANCE 有权
标题翻译：具有稳定反射的低反射膜的半导体激光器件
公开(公告)号：US20080205468A1
公开(公告)日：2008-08-28
申请号：US11938845
申请日：2007-11-13
申请人： Kazushige Kawasaki , Yasuyuki Nakagawa , Hiromasu Matsuoka
发明人： Kazushige Kawasaki , Yasuyuki Nakagawa , Hiromasu Matsuoka
IPC分类号： H01S5/028
CPC分类号： H01S5/028 , H01S5/0287 , H01S5/32341
摘要： A semiconductor laser device comprises a GaN substrate having a refractive index of 3.5 or below, a semiconductor layer laminated on the substrate, and a pair of facets forming a resonator and in face-to-face-relation to each other in a direction perpendicular to the direction of the laminated layer. One of the facets of the resonator includes a low reflection film, of a first dielectric film, a second dielectric film, a third dielectric film, and a fourth dielectric film. When the refractive indexes of these films are taken as n1, n2, n3, and n4, n1=n3 and n2=n4. The following relationship between the first dielectric film and the third dielectric film, and between the second dielectric film and the fourth dielectric film is established, nd+n′d′=pλ/4, where p is an integer, and λ is oscillation wavelength of a laser beam generated by the semiconductor laser device.
摘要翻译：半导体激光装置包括折射率为3.5以下的GaN衬底，层叠在衬底上的半导体层和形成谐振器的一对面，并且在垂直于该衬底的方向上彼此面对面层压层的方向。谐振器的一个面包括第一电介质膜，第二电介质膜，第三电介质膜和第四电介质膜的低反射膜。当这些膜的折射率取为n 1，n 2，n 3和n 4时，，n 1 = n 3和n 2 = n 4。建立第一电介质膜和第三电介质膜之间以及第二电介质膜和第四介电膜之间的以下关系，nd + n'd'=λ/ 4，其中p是整数，λ是振荡波长由半导体激光装置产生的激光束。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式