专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07106775B2 Semiconductor laser devices 有权
标题翻译：半导体激光器件
公开(公告)号：US07106775B2
公开(公告)日：2006-09-12
申请号：US10791889
申请日：2004-03-04
申请人： Hiromasu Matsuoka , Yasuhiro Kunitsugu , Harumi Nishiguchi , Tetsuya Yagi , Yasuyuki Nakagawa , Junichi Horie
发明人： Hiromasu Matsuoka , Yasuhiro Kunitsugu , Harumi Nishiguchi , Tetsuya Yagi , Yasuyuki Nakagawa , Junichi Horie
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , H01S5/0287
摘要： A low reflective film is formed of, in sequence from a side in contact with a laser chip, a first dielectric film of a refractive index n1 and a thickness d1, a second dielectric film of a refractive index n2 and a thickness d2, a third dielectric film of a refractive index n3 and a thickness d3, and a fourth dielectric film of a refractive index n4 and a thickness d4, specifically, aluminum oxide Al2O3 with a refractive index n1=1.638 is used for the first dielectric film, silicon oxide SiO2 with a refractive index n2=n4=1.489 for the second and fourth dielectric films, tantalum oxide Ta2O5 with a refractive index n3=2.063 for the third dielectric film, respectively, resulting in a semiconductor laser device with a reflectance which is stably controllable.
摘要翻译：低反射膜依次由与激光芯片接触的一侧形成，折射率n 1和厚度d 1的第一介电膜，折射率n 2的第二介电膜和厚度d 2，折射率n 3和厚度d 3的第三电介质膜和折射率n 4和厚度d 4的第四电介质膜，具体地，氧化铝Al 2 O 3，对于第一电介质膜使用折射率n 1 = 1.638的SUB> 3 ，第二和第四层的折射率n 2 = n 4 = 1.489的氧化硅SiO 2 介电膜，氧化钽Ta 2 O 3，折射率n 3 = 2.063，分别为第三绝缘膜，得到反射率为稳定可控

2. 发明授权

US07791097B2 Nitride semiconductor device and manufacturing method of the same 有权
标题翻译：氮化物半导体器件及其制造方法相同
公开(公告)号：US07791097B2
公开(公告)日：2010-09-07
申请号：US11772644
申请日：2007-07-02
申请人： Kyozo Kanamoto , Katsuomi Shiozawa , Kazushige Kawasaki , Hitoshi Sakuma , Junichi Horie , Toshihiko Shiga , Toshiyuki Oishi
发明人： Kyozo Kanamoto , Katsuomi Shiozawa , Kazushige Kawasaki , Hitoshi Sakuma , Junichi Horie , Toshihiko Shiga , Toshiyuki Oishi
IPC分类号： H01L29/207 , H01L21/20
CPC分类号： H01S5/22 , H01L33/0095 , H01L33/32 , H01L33/40 , H01S5/0425 , H01S5/32341 , H01S2301/173 , H01S2304/00
摘要： A nitride semiconductor device includes an n-type GaN substrate with a semiconductor device formed thereon and an n-type electrode which is a metal electrode formed on the rear surface of the GaN substrate. A surface modified layer and a reaction layer are interposed between the GaN substrate and n-type electrode. The surface modified layer serves as a carrier supplying layer, and is formed by causing the rear surface of the GaN substrate to react with a Si-containing plasma to be modified. The reaction layer is generated by partially removing a deposited material deposited on the surface modified layer by cleaning to generate a deposited layer and then causing Ti contained in a first metal layer and the deposited layer to partially react by heat treatment.
摘要翻译：氮化物半导体器件包括其上形成有半导体器件的n型GaN衬底和形成在GaN衬底的背面上的作为金属电极的n型电极。在GaN衬底和n型电极之间插入表面改性层和反应层。表面改性层用作载体供给层，并且通过使GaN衬底的后表面与待改性的含Si等离子体反应而形成。反应层是通过清洗部分除去沉积在表面改性层上的沉积材料产生沉积层，然后使包含在第一金属层中的Ti和沉积层通过热处理部分地反应而产生的。

3. 发明申请

US20090253264A1 THIN FILM FORMATION METHOD AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE 审中-公开
标题翻译：薄膜形成方法和半导体器件的制造方法
公开(公告)号：US20090253264A1
公开(公告)日：2009-10-08
申请号：US12189335
申请日：2008-08-11
申请人： Junichi Horie
发明人： Junichi Horie
IPC分类号： H01L21/311
CPC分类号： H01L22/12 , H01L22/26
摘要： A method of forming a thin film including a first portion having a first film thickness and a second portion having a second film thickness thinner than the first film thickness. A thin film having the first film thickness is formed on a substrate, an interference waveform upon film formation from reflected light by irradiating with laser light is acquired, the second portion of the thin film is etched, an interference waveform upon etching is acquired by irradiating, with laser light, the second portion, and calculating an interference waveform upon target etching on condition that the second portion has the second film thickness, based on the interference waveform upon film formation. The etching is stopped when the interference waveform upon etching becomes the same as the interference waveform upon target etching.
摘要翻译：一种形成薄膜的方法，所述薄膜包括具有第一薄膜厚度的第一部分和具有比第一薄膜厚度薄的第二薄膜厚度的第二部分。在基板上形成具有第一膜厚度的薄膜，通过照射激光获得反射光成膜时的干涉波形，蚀刻第二部分薄膜，通过照射获得蚀刻时的干涉波形基于成膜时的干涉波形，在第二部分具有第二膜厚的条件下，利用激光照射第二部分，并且在目标蚀刻时计算干涉波形。当蚀刻时的干涉波形与目标蚀刻时的干涉波形相同时，停止蚀刻。

4. 发明授权

US07382814B2 Semiconductor laser device and method of manufacturing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07382814B2
公开(公告)日：2008-06-03
申请号：US11409239
申请日：2006-04-24
申请人： Junichi Horie
发明人： Junichi Horie
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , B82Y20/00 , H01S5/209 , H01S5/22 , H01S5/3211 , H01S5/34313 , H01S5/34326 , H01S5/4087
摘要： A semiconductor laser diode comprises: an n-type GaAs substrate; and a first laser diode structure having a first n-type cladding layer, a first active layer including a quantum well layer, a first p-type cladding layer on the first active layer, a p-type signal layer on the first p-type cladding layer and which has the same constituent elements as those of the first p-type cladding layer, and a p-type ridge waveguide in a stripe mesa-like shape on the signal layer, which has the same constituent elements as those of the signal layer, and in which composition ratios of two constituent elements in a complementary relation of constituent elements are different from those composition ratios of the signal layer.
摘要翻译：半导体激光二极管包括：n型GaAs衬底; 以及具有第一n型包覆层的第一激光二极管结构，包括量子阱层的第一有源层，第一有源层上的第一p型覆层，第一p型上的p型信号层并且具有与第一p型覆层相同的构成元件和信号层上的条状台面状的p型脊波导，其具有与信号相同的构成元件层，构成元素的互补关系中的两个构成元素的组成比与信号层的组成比不同。

5. 发明申请

US20070024119A1 Thermal type flow measuring apparatus 有权
标题翻译：热式流量测量仪
公开(公告)号：US20070024119A1
公开(公告)日：2007-02-01
申请号：US11480979
申请日：2006-07-06
申请人： Izumi Watanabe , Junichi Horie , Keiichi Nakada
发明人： Izumi Watanabe , Junichi Horie , Keiichi Nakada
IPC分类号： B60L1/00
CPC分类号： G01F1/692 , G01F1/6845 , G01F1/698
摘要： A thermal type flow measuring apparatus includes a heating resistor provided in a thin part of a substrate and a bridge circuit for driving the heating resistor to have a preset heating temperature, wherein resistor elements on sides forming the bridge circuit are temperature sensitive resistors, a part or whole of at least one of the temperature sensitive resistors is placed in the thin part and near the heating resistor so that the temperature sensitive resistor is influenced by a heat of the heating resistor, and the preset heating temperature is increased as the flow of fluid is increased. This configuration introduces flow dependency into the heating temperature of the heating resistor.
摘要翻译：一种热式流量测量装置包括设置在基板的薄部分中的加热电阻器和用于驱动加热电阻器以具有预设加热温度的桥接电路，其中形成桥接电路的侧面上的电阻器元件是温度敏感电阻器，或整个温度敏感电阻器中的至少一个放置在薄部分和靠近加热电阻器处，使得温度敏感电阻器受到加热电阻器的热量的影响，并且预设加热温度随着流体流动而增加增加了。该配置将流依赖性引入加热电阻器的加热温度。

6. 发明申请

US20060144138A1 Thermal flow sensor 有权
标题翻译：热流量传感器
公开(公告)号：US20060144138A1
公开(公告)日：2006-07-06
申请号：US10546174
申请日：2004-05-26
申请人： Masamichi Yamada , Izumi Watanabe , Keiichi Nakada , Junichi Horie
发明人： Masamichi Yamada , Izumi Watanabe , Keiichi Nakada , Junichi Horie
IPC分类号： G01F1/68
CPC分类号： G01F1/6845 , G01F1/698
摘要： A thermal flow sensor which is fabricated at a low cost and has improved reliability. Over a cavity (7) formed in a semiconductor substrate (2), at least a heating resistance (4) is formed near the center of the cavity with an electrical insulation film interposed between the heating resistance and the cavity. The temperature (Th) of the heating resistance (4) is controlled to be higher than the medium temperature (Ta) by a constant temperature ({Th=Th−Ta). A distance (Ws) in the direction of airflow from an upstream end of the heating resistance (4) to an upstream end of the electrical insulation film lying over the cavity and the constant temperature (ΔTh) satisfy the following relationship: ΔTh/Ws≦800 (° C./mm) Thus, a thermal flow sensor is provided which can prevent deposition of floating fine particles, such as carbon particles, caused by the thermophoretic effect, can be fabricated at a low cost, and has high reliability.
摘要翻译：一种以低成本制造并具有改进的可靠性的热流传感器。在形成在半导体衬底（2）中的空腔（7）上，在腔的中心附近形成至少一个加热电阻（4），其中电绝缘膜置于加热电阻和空腔之间。加热电阻（4）的温度（Th）通过恒温（{Th = Th-Ta））控制为高于介质温度（Ta）。从加热电阻（4）的上游端到位于空腔上的电绝缘膜的上游端和恒温（DeltaTh）的气流方向的距离（Ws）满足以下关系： line-formula description =“In-line Formulas”end =“lead”？> DeltaTh / Ws <= 800（°C / mm）<？in-line-formula description =“In-line Formulas”end =“tail 因此，提供了能够防止由热诱导效应引起的诸如碳颗粒的漂浮微粒的沉积的热流量传感器，可以以低成本制造，并且具有高可靠性。

7. 发明申请

US20060065049A1 Fluid flow sensor and fluid flow measurement device 有权
标题翻译：流体流量传感器和流体流量测量装置
公开(公告)号：US20060065049A1
公开(公告)日：2006-03-30
申请号：US11206820
申请日：2005-08-19
申请人： Keiichi Nakada , Junichi Horie , Hiroshi Nakano , Izumi Watanabe
发明人： Keiichi Nakada , Junichi Horie , Hiroshi Nakano , Izumi Watanabe
IPC分类号： G01F1/68
CPC分类号： G01F1/699 , G01F1/6842 , G01F1/692
摘要： A Thermal type fluid flow sensor comprises a heating resistor formed on a thin film of a substrate, and plural thermal sensitive resistors configuring a bridge circuit. The thermal sensitive resistors are disposed on the thin film of the substrate so as to be located on an adjacent upstream side and an adjacent downstream side of the heating resistor in a stream direction of fluid to be measured. Resistor traces for the thermal sensitive resistors are formed so that the respective thermal sensitive resistors exhibit substantially equal changes in resistance with each other to distortion caused in the thin film.
摘要翻译：热式流体流量传感器包括形成在基板的薄膜上的加热电阻器和构成桥接电路的多个热敏电阻器。热敏电阻器设置在基板的薄膜上，以便沿着待测流体的流动方向位于加热电阻器的相邻上游侧和相邻的下游侧。形成用于热敏电阻器的电阻迹线，使得相应的热敏电阻器在薄膜中产生的失真相对于电阻变化相当大。

8. 发明授权

US06941815B2 Sensor with built-in circuits and pressure detector using the same 失效
标题翻译：传感器内置电路和压力检测器使用相同
公开(公告)号：US06941815B2
公开(公告)日：2005-09-13
申请号：US10173732
申请日：2002-06-19
申请人： Yasuo Onose , Junichi Horie , Seiji Kuryu , Akihiko Saito , Norio Ichikawa , Atsuo Watanabe , Satoshi Shimada
发明人： Yasuo Onose , Junichi Horie , Seiji Kuryu , Akihiko Saito , Norio Ichikawa , Atsuo Watanabe , Satoshi Shimada
IPC分类号： G01L9/00 , H01L29/84 , G01L9/04
CPC分类号： G01L9/0073 , G01L9/0042
摘要： A sensor with built-in circuits can be improved in the stability of the operation or characteristics. A circuit region and a sensor region are covered by a passivation film. The sensor region is partially covered by the passivation film. The sensor region and circuit region are protected by the passivation film, and an effect of the passivation film on the mechanical displacement of a diaphragm portion can be alleviated so that the sensor with built-in circuits may be improved in the stability of the operation or characteristics.
摘要翻译：具有内置电路的传感器可以提高操作的稳定性或特性。电路区域和传感器区域被钝化膜覆盖。传感器区域被钝化膜部分覆盖。传感器区域和电路区域被钝化膜保护，并且可以减轻钝化膜对隔膜部分的机械位移的影响，使得具有内置电路的传感器可以在操作的稳定性方面得到改善，或者特点

9. 发明授权

US06571621B2 Thermal flow rate measuring device 有权
公开(公告)号：US06571621B2
公开(公告)日：2003-06-03
申请号：US09951967
申请日：2001-09-14
申请人： Izumi Watanabe , Junichi Horie , Keiichi Nakada , Kei Ueyama
发明人： Izumi Watanabe , Junichi Horie , Keiichi Nakada , Kei Ueyama
IPC分类号： G01F500
CPC分类号： G01F5/00 , G01F1/6842 , G01F15/12
摘要： A thermal type flow rate measuring device can certainly prevent adhesion of water droplet onto a sensor element and thus achieve high reliability. The thermal type flow rate measuring device includes an auxiliary passage defined within a main passage for introducing a part of fluid flowing through the main passage, a sensor disposed within the auxiliary passage for detecting flow rate of the fluid and capturing means formed on an inner periphery of the auxiliary passage for capturing liquid contained in the fluid and transferring the captured liquid.

10. 发明授权

US06167761A Capacitance type pressure sensor with capacitive elements actuated by a diaphragm 失效
标题翻译：电容型压力传感器，其电容元件由隔膜驱动
公开(公告)号：US06167761A
公开(公告)日：2001-01-02
申请号：US09103612
申请日：1998-06-24
申请人： Keiji Hanzawa , Akio Yasukawa , Satoshi Shimada , Seikou Suzuki , Akihiko Saito , Masahiro Matsumoto , Atsushi Miyazaki , Norio Ichikawa , Junichi Horie , Seiji Kuryu
发明人： Keiji Hanzawa , Akio Yasukawa , Satoshi Shimada , Seikou Suzuki , Akihiko Saito , Masahiro Matsumoto , Atsushi Miyazaki , Norio Ichikawa , Junichi Horie , Seiji Kuryu
IPC分类号： G01L912
CPC分类号： G01L9/0073
摘要： In a capacitance type pressure sensor, a diaphragm is formed of a fragile material using an impurity-diffused monocrystal silicon and constitutes a stable pressure-responsive structure which does not undergo a plastic deformation. Between the diaphragm and a movable electrode is formed an oxide film to diminish stray capacitance between the movable electrode and a substrate and also between the movable electrode and a impurity-diffused layer. The oxide film and the movable electrode are each divided into plural regions so that the divided regions of the movable electrode are formed on the divided regions of the oxide film, thereby diminishing stress strain induced by a difference in therm expansion coefficient among the diaphragm, oxide film and movable electrode. The upper surface of a fixed electrode is covered with a structure for the fixed electrode which structure is formed by an insulating polycrystal silicon film not doped with impurity whereby the rigidity of the electrode is enhanced and it is possible to diminish a leak current.
摘要翻译：在电容式压力传感器中，使用杂质扩散的单晶硅由脆性材料形成隔膜，构成不发生塑性变形的稳定的压力响应结构。在隔膜和可动电极之间形成氧化膜，以减小可动电极和基板之间以及可移动电极和杂质扩散层之间的杂散电容。氧化物膜和可动电极分别分成多个区域，使得可动电极的分割区域形成在氧化膜的分割区域上，从而减小由隔膜，氧化物中的热膨胀系数差引起的应力应变薄膜和可动电极。固定电极的上表面被固定电极的结构覆盖，该结构由不掺杂杂质的绝缘多晶硅膜形成，由此电极的刚性增强并且可以减小漏电流。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式