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1. 发明申请

US20080273556A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 失效
标题翻译：半导体发光器件
公开(公告)号：US20080273556A1
公开(公告)日：2008-11-06
申请号：US12022194
申请日：2008-01-30
申请人： Harumi Nishiguchi , Hiromasu Matsuoka , Yasuyuki Nakagawa , Yasuhiro Kunitsugu
发明人： Harumi Nishiguchi , Hiromasu Matsuoka , Yasuyuki Nakagawa , Yasuhiro Kunitsugu
IPC分类号： H01S5/028
CPC分类号： H01S5/028 , H01S5/0283 , H01S5/0287
摘要： A semiconductor light-emitting device includes a light generation unit generating light with an oscillation wavelength λ, a light outgoing facet from which light generated at the light generation unit emerges, a light reflecting facet at which light generated at the light generation unit is reflected, and a high reflection film at the light reflecting facet and made of a dielectric multilayered film of at least three layers. The high reflection film includes a first layer which is in contact with the light reflection facet, is constituted of Al2O3, and has a thickness smaller than λ/4n, wherein n is the refractive index of Al2O3, a second layer which is in contact with the first layer, and a third layer which is in contact with the second layer and has a refractive index different from the refractive index of the second layer.
摘要翻译：半导体发光装置包括产生具有振荡波长λ的光的光产生单元，出现在发光单元处产生的光的光出射小面反射在光产生单元处产生的光的光反射小面，以及在光反射面处的高反射膜，并且由至少三层的电介质多层膜制成。高反射膜包括与光反射面接触的第一层，由Al 2 O 3 3 3构成，并且具有小于λ/ 4n的厚度，其中n是Al 2 O 3 3的折射率，与第一层接触的第二层和与第二层接触的第三层并且具有与第二层的折射率不同的折射率。

2. 发明授权

US07039085B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US07039085B2
公开(公告)日：2006-05-02
申请号：US10828267
申请日：2004-04-21
申请人： Yasuhiro Kunitsugu , Hiromasu Matsuoka , Yasuyuki Nakagawa , Harumi Nishiguchi
发明人： Yasuhiro Kunitsugu , Hiromasu Matsuoka , Yasuyuki Nakagawa , Harumi Nishiguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , H01S5/0287
摘要： A semiconductor laser device includes a dielectric multilayer film with a reflectance of 40% or more, on at least one of optical exit faces of a laser chip. The dielectric multilayer film includes a film of tantalum oxide (Ta2O5) and another film of a dielectric oxide, such as aluminum oxide (Al2O3), and silicon oxide (SiO2). The tantalum oxide film has an optical absorption coefficient smaller than that of silicon (Si) and thermal stability in emission superior to that of titanium oxide (TiO2), thereby remarkably improving the catastrophic optical damage degradation level of the laser chip.
摘要翻译：半导体激光装置包括在激光芯片的光学出射面的至少一个上具有40％以上的反射率的电介质多层膜。电介质多层膜包括氧化钽（Ta 2 O 5 5）的膜和电介质氧化物的另一膜，例如氧化铝（Al 2 O 3） SUB 3 O 3）和氧化硅（SiO 2/2）。氧化钽膜的光吸收系数小于硅（Si）的光吸收系数，并且发光的热稳定性优于二氧化钛（TiO 2），从而显着地改善了灾难性光学损伤降解水平激光芯片。

3. 发明授权

US07826507B2 Semiconductor laser device including highly reflective coating film 失效
标题翻译：半导体激光器件包括高反射涂膜
公开(公告)号：US07826507B2
公开(公告)日：2010-11-02
申请号：US12022194
申请日：2008-01-30
申请人： Harumi Nishiguchi , Hiromasu Matsuoka , Yasuyuki Nakagawa , Yasuhiro Kunitsugu
发明人： Harumi Nishiguchi , Hiromasu Matsuoka , Yasuyuki Nakagawa , Yasuhiro Kunitsugu
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , H01S5/0283 , H01S5/0287
摘要： A semiconductor light-emitting device includes a light generation unit generating light with an oscillation wavelength λ, a light outgoing facet from which light generated at the light generation unit emerges, a light reflecting facet at which light generated at the light generation unit is reflected, and a high reflection film at the light reflecting facet and made of a dielectric multilayered film of at least three layers. The high reflection film includes a first layer which is in contact with the light reflection facet, is constituted of Al2O3, and has a thickness smaller than λ/4n, wherein n is the refractive index of Al2O3, a second layer which is in contact with the first layer, and a third layer which is in contact with the second layer and has a refractive index different from the refractive index of the second layer.
摘要翻译：半导体发光装置包括产生具有振荡波长λ的光的光产生单元，出现在发光单元处产生的光的光出射小面反射在光产生单元处产生的光的光反射小面，以及在光反射面处的高反射膜，并且由至少三层的电介质多层膜制成。高反射膜包括与光反射面接触的第一层，由Al 2 O 3构成，并且具有小于λ/ 4n的厚度，其中n是Al 2 O 3的折射率，与Al 2 O 3接触的第二层第一层和与第二层接触并且具有与第二层的折射率不同的折射率的第三层。

4. 发明授权

US07106775B2 Semiconductor laser devices 有权
标题翻译：半导体激光器件
公开(公告)号：US07106775B2
公开(公告)日：2006-09-12
申请号：US10791889
申请日：2004-03-04
申请人： Hiromasu Matsuoka , Yasuhiro Kunitsugu , Harumi Nishiguchi , Tetsuya Yagi , Yasuyuki Nakagawa , Junichi Horie
发明人： Hiromasu Matsuoka , Yasuhiro Kunitsugu , Harumi Nishiguchi , Tetsuya Yagi , Yasuyuki Nakagawa , Junichi Horie
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , H01S5/0287
摘要： A low reflective film is formed of, in sequence from a side in contact with a laser chip, a first dielectric film of a refractive index n1 and a thickness d1, a second dielectric film of a refractive index n2 and a thickness d2, a third dielectric film of a refractive index n3 and a thickness d3, and a fourth dielectric film of a refractive index n4 and a thickness d4, specifically, aluminum oxide Al2O3 with a refractive index n1=1.638 is used for the first dielectric film, silicon oxide SiO2 with a refractive index n2=n4=1.489 for the second and fourth dielectric films, tantalum oxide Ta2O5 with a refractive index n3=2.063 for the third dielectric film, respectively, resulting in a semiconductor laser device with a reflectance which is stably controllable.
摘要翻译：低反射膜依次由与激光芯片接触的一侧形成，折射率n 1和厚度d 1的第一介电膜，折射率n 2的第二介电膜和厚度d 2，折射率n 3和厚度d 3的第三电介质膜和折射率n 4和厚度d 4的第四电介质膜，具体地，氧化铝Al 2 O 3，对于第一电介质膜使用折射率n 1 = 1.638的SUB> 3 ，第二和第四层的折射率n 2 = n 4 = 1.489的氧化硅SiO 2 介电膜，氧化钽Ta 2 O 3，折射率n 3 = 2.063，分别为第三绝缘膜，得到反射率为稳定可控

5. 发明申请

US20070280307A1 SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译：半导体激光器件
公开(公告)号：US20070280307A1
公开(公告)日：2007-12-06
申请号：US11755818
申请日：2007-05-31
申请人： Yasuhiro Kunitsugu , Hiromasu Matsuoka
发明人： Yasuhiro Kunitsugu , Hiromasu Matsuoka
IPC分类号： H01S3/10 , H01S5/00 , H01S3/04
CPC分类号： H01S5/028 , H01S5/4087
摘要： A semiconductor laser device for emitting light at two wavelengths λ1 and λ2 comprises: a laser chip having a front end face and a rear end face; and a high reflectance film on the rear end face of the laser chip and including seven or more layers laminated one on top of another, the seven or more layers including a first layer and a last layer, the first layer being closest to the laser chip, the last layer being farthest from the laser chip. One or more of the seven or more layers of the high reflectance film, other than the first and last layers, has an optical thickness of n*λ/2, where n is a natural number and λ=(λ1+λ2)/2. All of the seven or more layers of the high reflectance film, other than the one or more layers and other than the last layer, have an optical thickness of (2n′+1)*λ/4, where n′ is 0 or a positive integer. The last layer of the high reflectance film has an optical thickness of n*λ/4.
摘要翻译：用于发射两个波长λ1和λ2的光的半导体激光器件包括：具有前端面和后端面的激光芯片; 以及在激光芯片的后端面上的高反射率膜，并且包括一个层叠在另一层上的七层以上的层，所述七层以上的层包括第一层和最后层，所述第一层最靠近所述激光芯片最后一层距离激光芯片最远。除了第一层和最后层之外，高反射率膜的七层或更多层的一个或多个具有n *λ/ 2的光学厚度，其中n是自然数，λ=（λ1 < / SUB> + lambda 2/2）。除了一层或多层，而不是最后一层以外，高反射率膜的所有7层或更多层具有（2n'+ 1）*λ/ 4的光学厚度，其中n'为0或者正整数。高反射率膜的最后一层具有n *λ/ 4的光学厚度。

6. 发明授权

US08519501B2 Semiconductor light detecting element with grooved substrate 失效
标题翻译：具有沟槽基板的半导体光检测元件
公开(公告)号：US08519501B2
公开(公告)日：2013-08-27
申请号：US13477128
申请日：2012-05-22
申请人： Hitoshi Tada , Yasuo Nakajima , Yasuhiro Kunitsugu
发明人： Hitoshi Tada , Yasuo Nakajima , Yasuhiro Kunitsugu
IPC分类号： H01L31/0232
CPC分类号： H01L31/02327 , H01L31/035281 , H01L31/105 , Y02E10/50
摘要： A back-surface-incidence semiconductor light element includes: a semiconductor substrate of a first conductivity type; a first semiconductor layer of a first conductivity type on the semiconductor substrate; a light absorbing layer on the first semiconductor layer; a second semiconductor layer on the light absorbing layer; and an impurity diffusion region of a second conductivity type in a portion of the second semiconductor layer. A region including a p-n junction between the first semiconductor layer and the impurity diffusion region, and extending through the light absorbing layer, is a light detecting portion that detects light incident on a back surface of the semiconductor substrate. A groove in the back surface of the semiconductor substrate surrounds the light detecting portion, as viewed in plan.
摘要翻译：背面入射半导体光元件包括：第一导电类型的半导体衬底; 半导体衬底上的第一导电类型的第一半导体层; 在第一半导体层上的光吸收层; 在所述光吸收层上的第二半导体层; 以及在第二半导体层的一部分中具有第二导电类型的杂质扩散区。包括第一半导体层和杂质扩散区之间并延伸穿过光吸收层的p-n结的区域是检测入射在半导体衬底的背面上的光的光检测部分。半导体衬底的后表面中的凹槽围绕光检测部分，如在平面图中所示。

7. 发明授权

US5368992A Method of producing diffraction grating 失效
$Method of producing diffraction grating$
标题翻译：衍射光栅的制作方法
公开(公告)号：US5368992A
公开(公告)日：1994-11-29
申请号：US034785
申请日：1993-03-19
申请人： Yasuhiro Kunitsugu
发明人： Yasuhiro Kunitsugu
IPC分类号： H01L21/306 , G02B6/124 , G03F7/00 , H01S5/00 , G03C5/00
CPC分类号： G02B6/124 , G03F7/001
摘要： In a method of producing a .lambda./4-shifted diffraction grating, a positive type photoresist is applied to a substrate so that the surface level of the photoresist is in the vicinity of the node of the nodes in a standing wave light intensity distribution in the thickness direction of the photoresist that is nearest to the substrate, the light intensity distribution is produced by interference between incident light in the film and light reflected by the substrate. Then, the photoresist is subjected to two-luminous-flux interference exposure, followed by development, providing a pattern of photoresist films regions each having an over-hanging portion. Thereafter, an insulating film is deposited on the photoresist and exposed parts of the substrate, a first protective resist is selectively formed on the photoresist, the insulating film which is not covered with the first resist is removed, the substrate is etched using the photoresist, which is not covered with the first resist, as a mask, the photoresist is removed together with the first resist and the insulating film on the photoresist by lift-off, leaving the insulating film on the substrate, a second protective resist is selectively formed on the etched surface of the substrate, and the substrate is etched using the insulating film on the substrate as a mask, whereby two regions of grooves in the substrate having reversed phase are produced.
摘要翻译：在制造λ/ 4位衍射光栅的方法中，将正型光致抗蚀剂施加到基板上，使得光致抗蚀剂的表面水平位于节点的节点附近，驻波的光强分布在最接近基板的光致抗蚀剂的厚度方向，通过膜中的入射光与基板反射的光之间的干涉产生光强度分布。然后，对光致抗蚀剂进行双光束干涉曝光，随后进行显影，提供各自具有悬垂部分的光致抗蚀剂膜区域的图案。此后，在光致抗蚀剂和基板的暴露部分上沉积绝缘膜，在光致抗蚀剂上选择性地形成第一保护抗蚀剂，除去未被第一抗蚀剂覆盖的绝缘膜，使用光致抗蚀剂蚀刻基板，其不被第一抗蚀剂覆盖，作为掩模，通过剥离将光致抗蚀剂与第一抗蚀剂和绝缘膜一起除去在光致抗蚀剂上，使绝缘膜留在基板上，第二保护膜选择性地形成在使用基板上的绝缘膜作为掩模蚀刻基板的蚀刻表面和基板，由此制造具有反相的基板中的两个槽区域。

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