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    • 10. 发明授权
    • Thin film forming method
    • 薄膜成型方法
    • US5540820A
    • 1996-07-30
    • US76691
    • 1993-06-15
    • Masatomo TerakadoShinji SasakiHiroshi Saito
    • Masatomo TerakadoShinji SasakiHiroshi Saito
    • C23C14/14C23C14/34C23C14/35H01L21/3205H01L21/768
    • C23C14/14C23C14/345C23C14/35H01L21/76838
    • A method of forming a thin film by a bias sputtering method using a first target made of a refractory metal mainly composed of W and a second target made of a conductive material mainly composed of a low-melting-point metal which comprises, upon sputtering the first target made of the refractory metal mainly composed of W, decreasing high energy particles incident to a substrate in a state where a desired bias voltage is applied to a substrate thereby forming a thin film of the refractory metal mainly composed of W with low resistivity and less stress and, subsequently, upon sputtering the second target made of the conductive material mainly composed of the low-melting-point metal, accelerating the growth of crystals in a state where a desired voltage is applied to a substrate thereby forming in lamination a thin film of the conductive material mainly composed of the low-melting-point metal with a large crystal grain size on the thin film made of the refractory metal mainly composed of W.
    • 通过使用由主要由W构成的难熔金属制成的第一靶和由主要由低熔点金属构成的导电性材料构成的第二靶的偏压法形成薄膜的方法,其特征在于, 由主要由W组成的难熔金属制成的第一靶,在将基板上施加期望的偏置电压的状态下降低入射到基板的高能粒子,从而形成主要由低电阻率的W构成的难熔金属的薄膜, 并且随后在溅射由主要由低熔点金属构成的导电材料制成的第二靶时,在所需电压施加到基板上的状态下加速晶体的生长,从而形成薄层 主要由难熔金属制成的薄膜上的主要由低熔点金属构成的导电材料薄膜主要由 W.