专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090322419A1 AMPLIFYING APPARATUS USING MAGNETO-RESISTIVE DEVICE 审中-公开
标题翻译：放大器使用磁电阻器件
公开(公告)号：US20090322419A1
公开(公告)日：2009-12-31
申请号：US12506201
申请日：2009-07-20
申请人： Hiroki Maehara , Hitoshi Kubota , Akio Fukushima , Shinji Yuasa , Yoshishige Suzuki , Yoshinori Nagamine
发明人： Hiroki Maehara , Hitoshi Kubota , Akio Fukushima , Shinji Yuasa , Yoshishige Suzuki , Yoshinori Nagamine
IPC分类号： H03F1/00
CPC分类号： H01L29/66984 , G11C11/161 , H01L29/82 , H01L43/08
摘要： An amplifying apparatus includes a magneto-resistive device which has a magnetic free layer, a magnetic pinned layer having a magnetic moment larger than that of the magnetic free layer, and an intermediate layer provided in between the magnetic free layer and the magnetic pinned layer. The amplifying apparatus has a first electrode layer provided in a magnetic free layer side of the magneto-resistive device, and a second electrode layer provided in a magnetic pinned layer side of the magneto-resistive device. The amplifying apparatus further includes a direct-current bias power-source for applying a direct-current bias to the magneto-resistive device, and a load resistor. The amplifying apparatus continually causes the change of a magnetization direction of the magnetic free layer to make the magneto-resistive device show negative resistance, and thereby amplifies an input signal.
摘要翻译：放大装置包括具有无磁性层的磁阻装置，具有比无磁性层的磁矩大的磁矩的磁性固定层以及设置在磁性自由层和磁性固定层之间的中间层。放大装置具有设置在磁阻装置的磁性自由层侧的第一电极层和设置在磁阻装置的磁性固定层侧的第二电极层。放大装置还包括用于向磁阻装置施加直流偏压的直流偏置电源和负载电阻。放大装置持续地引起磁性自由层的磁化方向的变化，使得磁阻装置显示负电阻，从而放大输入信号。

2. 发明授权

US08013408B2 Negative-resistance device with the use of magneto-resistive effect 有权
标题翻译：负电阻器件采用磁阻效应
公开(公告)号：US08013408B2
公开(公告)日：2011-09-06
申请号：US12468369
申请日：2009-05-19
申请人： Hiroki Maehara , Hitoshi Kubota , Akio Fukushima , Shinji Yuasa , Yoshishige Suzuki , Yoshinori Nagamine
发明人： Hiroki Maehara , Hitoshi Kubota , Akio Fukushima , Shinji Yuasa , Yoshishige Suzuki , Yoshinori Nagamine
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/14 , H01F10/3254 , H01F10/3272 , H01L29/885
摘要： A magneto-resistive device has a magnetic free layer (33), a magnetic pinned layer (31) having a magnetic moment larger than that of the magnetic free layer, and an intermediate layer (32) provided between the magnetic free layer and the magnetic pinned layer. The negative-resistance device is characterized in that the negative-resistance device shows negative resistance by making the magnetic free layer continually change the magnetization direction along with the increase of the voltage which is applied to a magneto-resistive device so that electrons flow into the negative-resistance device from a magnetic free layer side.
摘要翻译：磁阻装置具有无磁性层（33），具有比无磁性层的磁矩大的磁矩的磁性固定层（31）和设置在磁性自由层和磁性层之间的中间层（32）固定层。负电阻器件的特征在于，负电阻器件通过使磁性自由层随着施加到磁阻器件的电压的增加而不断地改变磁化方向而显示出负的电阻，使得电子流入来自无磁层的负电阻器件。

3. 发明申请

US20090261436A1 NEGATIVE-RESISTANCE DEVICE WITH THE USE OF MAGNETO-RESISTIVE EFFECT 有权
标题翻译：使用磁阻效应的负极电阻器件
公开(公告)号：US20090261436A1
公开(公告)日：2009-10-22
申请号：US12468369
申请日：2009-05-19
申请人： Hiroki Maehara , Hitoshi Kubota , Akio Fukushima , Shinji Yuasa , Yoshishige Suzuki , Yoshinori Nagamine
发明人： Hiroki Maehara , Hitoshi Kubota , Akio Fukushima , Shinji Yuasa , Yoshishige Suzuki , Yoshinori Nagamine
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/14 , H01F10/3254 , H01F10/3272 , H01L29/885
摘要： A magneto-resistive device has a magnetic free layer (33), a magnetic pinned layer (31) having a magnetic moment larger than that of the magnetic free layer, and an intermediate layer (32) provided between the magnetic free layer and the magnetic pinned layer. The negative-resistance device is characterized in that the negative-resistance device shows negative resistance by making the magnetic free layer continually change the magnetization direction along with the increase of the voltage which is applied to a magneto-resistive device so that electrons flow into the negative-resistance device from a magnetic free layer side.
摘要翻译：磁阻装置具有无磁性层（33），具有比无磁性层的磁矩大的磁矩的磁性固定层（31）和设置在磁性自由层和磁性层之间的中间层（32）固定层。负电阻器件的特征在于，负电阻器件通过使磁性自由层随着施加到磁阻器件的电压的增加而不断地改变磁化方向而显示出负的电阻，使得电子流入来自无磁层的负电阻器件。

4. 发明授权

US07764136B2 Microwave transmission line integrated microwave generating element and microwave transmission line integrated microwave detecting element 有权
标题翻译：微波传输线集成微波发生元件和微波传输线集成微波检测元件
公开(公告)号：US07764136B2
公开(公告)日：2010-07-27
申请号：US11886083
申请日：2006-03-17
申请人： Yoshishige Suzuki , Shinji Yuasa , Akio Fukushima , Ashwin Tulapurkar
发明人： Yoshishige Suzuki , Shinji Yuasa , Akio Fukushima , Ashwin Tulapurkar
IPC分类号： H03K3/313 , H01L29/82
CPC分类号： H01L43/08 , H01P11/003 , H01Q23/00 , H03B15/006
摘要： A strip line integrated microwave generating element and a microwave detecting element comprises a signal electrode and a ground electrode. The element has a magnetic tunnel junction structure which includes a magnetization fixed layer, a MgO tunnel barrier layer, and a magnetization free layer. The magnetization free layer is 200 nm square or smaller in a cross-sectional area. The magnetization fixed layer is in contact with either one of the signal electrode and the ground electrode while the magnetization free layer of the element being in contact with the other. The element is smaller than the electrodes and mounted on a part of the signal electrode or the ground electrode. A MR ratio of the element is of 100% or more. A resistance value of the element is from 50Ω to 300Ω. The resistance of the element is matched with an impedance of the microwave transmission line.
摘要翻译：带状集成微波发生元件和微波检测元件包括信号电极和接地电极。元件具有包括磁化固定层，MgO隧道势垒层和无磁化层的磁性隧道结结构。磁化自由层的横截面积为200nm以下。磁化固定层与信号电极和接地电极中的任一个接触，而元件的无磁化层与另一个接触。元件比电极小，并且安装在信号电极或接地电极的一部分上。元件的MR比率为100％以上。元素的电阻值为50＆OHgr; 至300＆OHgr; 元件的电阻与微波传输线的阻抗相匹配。

5. 发明申请

US20080150643A1 Microwave Transmission Line Integrated Microwave Generating Element and Microwave Transmission Line Integrated Microwave Detecting Element 有权
标题翻译：微波传输线集成微波发生元件和微波传输线集成微波检测元件
公开(公告)号：US20080150643A1
公开(公告)日：2008-06-26
申请号：US11886083
申请日：2006-03-17
申请人： Yoshishige Suzuki , Shinji Yuasa , Akio Fukushima , Ashwin Tulapurkar
发明人： Yoshishige Suzuki , Shinji Yuasa , Akio Fukushima , Ashwin Tulapurkar
IPC分类号： H03B15/00 , H01L43/08 , H01Q23/00
CPC分类号： H01L43/08 , H01P11/003 , H01Q23/00 , H03B15/006
摘要： Microwave generating and detection portions of a electronic circuit is improved in efficiency and reduced in size. A microwave generating element A comprises a lower electrode 1, a layer 3 formed on the lower electrode 1 in an island shape, forming a magnetoresistance element, an insulator 7 formed on the lower electrode 1 in such a manner as to surround the layer 3 forming the magnetoresistance element, and an upper electrode 5 formed on the insulator 7 and the layer 3 forming the magnetoresistance element. The layer 3 forming the magnetoresistance element includes, in order from the side of the lower electrode 1, a magnetization fixed layer 3a, an intermediate layer 3b, and a magnetization free layer 3c. The magnetization free layer 3c, which is required to produce resonance oscillation based on a current, preferably is dimensioned to be equal to or smaller than 200 nm square in a cross-sectional area and on the order of 1 to 5 nm in film thickness, for example. The magnetization fixed layer 3a, when made of a single material, is required to have a thickness 10 times or more of the thickness of the magnetization free layer 3c. The magnetization fixed layer 3a may be comprised of a magnetic metal multilayer film that utilizes antiferromagnetic coupling.
摘要翻译：电子电路的微波产生和检测部分的效率提高并且尺寸减小。微波发生元件A包括下电极1，形成在岛状的下电极1上的层3，形成磁阻元件，形成在下电极1上的绝缘体7，以包围形成层3的方式磁阻元件和形成在绝缘体7上的上电极5和形成磁阻元件的层3。形成磁阻元件的层3从下电极1的侧面依次包括磁化固定层3a，中间层3b和无磁化层3c。优选地，基于电流产生共振振荡所需的无磁化层3c的截面积优选为等于或小于200nm正方形，膜厚为1〜5nm量级，例如。当由单一材料制成时，磁化固定层3a必须具有磁化自由层3c的厚度的10倍或更多的厚度。磁化固定层3a可以由利用反铁磁耦合的磁性金属多层膜构成。

6. 发明申请

US20120068285A1 MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND METHOD OF MANUFACTURING MAGNETORESISTIVE EFFECT ELEMENT 有权
标题翻译：磁阻效应元件，磁记忆和制造磁阻效应元件的方法
公开(公告)号：US20120068285A1
公开(公告)日：2012-03-22
申请号：US13234720
申请日：2011-09-16
申请人： Eiji KITAGAWA , Tadaomi Daibou , Yutaka Hashimoto , Masaru Tokou , Tadashi Kai , Makoto Nagamine , Toshihiko Nagase , Katsuya Nishiyama , Koji Ueda , Hiroaki Yoda , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
发明人： Eiji KITAGAWA , Tadaomi Daibou , Yutaka Hashimoto , Masaru Tokou , Tadashi Kai , Makoto Nagamine , Toshihiko Nagase , Katsuya Nishiyama , Koji Ueda , Hiroaki Yoda , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
IPC分类号： H01L29/82 , H01L21/20
CPC分类号： H01L43/10 , B82Y40/00 , G11C11/161 , H01F10/133 , H01F10/3286 , H01F41/307 , H01L27/228 , H01L29/82 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more.
摘要翻译：根据一个实施例，磁阻效应元件包括第一磁性层，其包括对膜表面的垂直各向异性和不变的磁化方向，第一磁性层具有包括从包括Tb，Gd和Dy的第一组中选择的元素的磁性膜以及从包括Co和Fe的第二组中选择的元素，对膜表面具有垂直磁各向异性的第二磁性层和可变磁化方向，以及在第一磁性层和第二磁性层之间的非磁性层。磁性膜包括非晶相和粒径为0.5nm以上的晶体。

7. 发明申请

US20110073970A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20110073970A1
公开(公告)日：2011-03-31
申请号：US12879544
申请日：2010-09-10
申请人： Tadashi Kai , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
发明人： Tadashi Kai , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
IPC分类号： H01L29/82
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , Y10S977/935
摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.
摘要翻译：根据一个实施例，磁阻元件包括具有可变磁化的第一磁性层和在垂直于膜表面的垂直方向上的易轴，具有不变磁化的第二磁性层和垂直方向上的易轴，以及在第一和第二磁性层之间的第一非磁性层。第一磁性层包括铁磁材料，其包括Co和Pd或Co和Pt交替层压在原子紧密堆积的平面上的合金。第一磁性层具有指向垂直方向的C轴。并且通过流过第一磁性层，第一非磁性层和第二磁性层的电流改变第一磁性层的磁化方向。

8. 发明授权

US08680632B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08680632B2
公开(公告)日：2014-03-25
申请号：US13310154
申请日：2011-12-02
申请人： Tadaomi Daibou , Junichi Ito , Tadashi Kai , Minoru Amano , Hiroaki Yoda , Terunobu Miyazaki , Shigemi Mizukami , Koji Ando , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Akio Fukushima , Taro Nagahama , Takahide Kubota
发明人： Tadaomi Daibou , Junichi Ito , Tadashi Kai , Minoru Amano , Hiroaki Yoda , Terunobu Miyazaki , Shigemi Mizukami , Koji Ando , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Akio Fukushima , Taro Nagahama , Takahide Kubota
IPC分类号： H01L29/82 , G11C11/00
CPC分类号： H01L43/10 , H01L23/528 , H01L27/222 , H01L27/226 , H01L43/02 , H01L43/08 , H01L2924/0002 , H01L2924/00
摘要： A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45≦x
摘要翻译：根据实施例的磁阻元件包括：基底层; 第一磁性层，其形成在所述基底层上，并且包括在垂直于膜平面的方向上具有容易磁化的轴的第一磁性膜，所述第一磁性膜包括Mn x Ga 100-x（45≤n1E; x <64原子％）; 形成在第一磁性层上的第一非磁性层; 以及形成在所述第一非磁性层上的第二磁性层，并且包括在垂直于膜平面的方向上具有容易磁化的轴的第二磁性膜，所述第二磁性膜包括MnyGa100-y（45＆lt; IL1; y <64原子％），。第一和第二磁性层包括彼此不同的Mn组成比，第一磁性层的磁化方向可以通过第一非磁性层在第一磁性层和第二磁性层之间流动的电流而改变。

9. 发明授权

US08521795B2 Random number generating device 有权
标题翻译：随机数生成装置
公开(公告)号：US08521795B2
公开(公告)日：2013-08-27
申请号：US12452012
申请日：2008-03-24
申请人： Akio Fukushima , Hitoshi Kubota , Kay Yakushiji , Shinji Yuasa , Koji Ando
发明人： Akio Fukushima , Hitoshi Kubota , Kay Yakushiji , Shinji Yuasa , Koji Ando
IPC分类号： G06F7/58
CPC分类号： G06F7/588
摘要： A random number generating device is constructed such that it has improved random number generation rate and allows for construction of compact circuit with ease.The random number generating device includes a magnetoresistive element that has three layers consisting of a magnetization free layer, an interlayer, and a magnetization fixed layer, and has at least two resistance values depending on arrangement of magnetization in the magnetization free layer and the magnetization fixed layer, wherein the magnetoresistive element is subjected to be applied with a magnetization current so that the inversion probability of the magnetization free layer assumes a value between 0 and 1, through which the resistance value of the magnetoresistive element is extracted as random numbers.
摘要翻译：构造随机数生成装置，使其具有改善的随机数生成速率并且容易地构造紧凑电路。该随机数生成装置包括具有由磁化自由层，中间层和磁化固定层构成的三层的磁致电阻元件，并且具有取决于磁化自由层的磁化排列和磁化固定的至少两个电阻值层，其中磁阻元件经受施加磁化电流，使得磁化自由层的反转概率为0和1之间的值，磁阻元件的电阻值通过该值提取为随机数。

10. 发明申请

US20120241881A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20120241881A1
公开(公告)日：2012-09-27
申请号：US13310154
申请日：2011-12-02
申请人： Tadaomi DAIBOU , Junichi Ito , Tadashi Kai , Minoru Amano , Hiroaki Yoda , Terunobu Miyazaki , Shigemi Mizukami , Koji Ando , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Akio Fukushima , Taro Nagahama , Takahide Kubota
发明人： Tadaomi DAIBOU , Junichi Ito , Tadashi Kai , Minoru Amano , Hiroaki Yoda , Terunobu Miyazaki , Shigemi Mizukami , Koji Ando , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Akio Fukushima , Taro Nagahama , Takahide Kubota
IPC分类号： H01L43/10
CPC分类号： H01L43/10 , H01L23/528 , H01L27/222 , H01L27/226 , H01L43/02 , H01L43/08 , H01L2924/0002 , H01L2924/00
摘要： A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45≦x
摘要翻译：根据实施例的磁阻元件包括：基底层; 第一磁性层，其形成在所述基底层上，并且包括在垂直于膜平面的方向上具有容易磁化的轴的第一磁性膜，所述第一磁性膜包括Mn x Ga 100-x（45≤n1E; x <64原子％）; 形成在第一磁性层上的第一非磁性层; 以及形成在所述第一非磁性层上的第二磁性层，并且包括在垂直于膜平面的方向上具有容易磁化的轴的第二磁性膜，所述第二磁性膜包括MnyGa100-y（45＆lt; IL1; y <64原子％），。第一和第二磁性层包括彼此不同的Mn组成比，第一磁性层的磁化方向可以通过第一非磁性层在第一磁性层和第二磁性层之间流动的电流而改变。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式