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1. 发明授权

US08750029B2 Magnetoresistive effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁存储器
公开(公告)号：US08750029B2
公开(公告)日：2014-06-10
申请号：US13233420
申请日：2011-09-15
申请人： Eiji Kitagawa , Tadaomi Daibou , Tadashi Kai , Toshihiko Nagase , Katsuya Nishiyama , Koji Ueda , Hiroaki Yoda
发明人： Eiji Kitagawa , Tadaomi Daibou , Tadashi Kai , Toshihiko Nagase , Katsuya Nishiyama , Koji Ueda , Hiroaki Yoda
IPC分类号： G11C11/15 , H01L43/08
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08
摘要： According to one embodiment, a magnetoresistive effect element includes a recording layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and a variable orientation of magnetization, a reference layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and an invariable orientation of magnetization, a nonmagnetic layer between the recording layer and the reference layer, a first underlayer on a side of the recoding layer opposite to a side on which the nonmagnetic layer is provided, and a second underlayer between the recording layer and the first underlayer. The second underlayer is a Pd film including a concentration of 3×1015 atms/cm2.
摘要翻译：根据一个实施例，磁阻效应元件包括记录层，其包括对膜表面具有垂直磁各向异性的铁磁材料和磁化的可变取向，包括具有垂直磁性各向异性的铁磁材料的参考层和膜表面的不变取向磁化，记录层和参考层之间的非磁性层，与记录层和第一底层之间的第二底层与编码层的与设置非磁性层的一侧相反的一侧的第一底层。第二底层是包含浓度为3×1015atms / cm 2的Pd膜。

2. 发明授权

US08670268B2 Magnetoresistive element and magnetic memory using the same 有权
标题翻译：磁阻元件和使用其的磁存储器
公开(公告)号：US08670268B2
公开(公告)日：2014-03-11
申请号：US13427732
申请日：2012-03-22
申请人： Toshihiko Nagase , Eiji Kitagawa , Katsuya Nishiyama , Tadashi Kai , Koji Ueda , Daisuke Watanabe
发明人： Toshihiko Nagase , Eiji Kitagawa , Katsuya Nishiyama , Tadashi Kai , Koji Ueda , Daisuke Watanabe
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15 , H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01L43/02 , H01L43/10
摘要： According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization. The first nonmagnetic layer is provided between the first and second magnetic layers. The second magnetic layer includes third and fourth magnetic layers, and a second nonmagnetic layer formed between the third and fourth magnetic layers. The third magnetic layer is in contact with the first nonmagnetic layer and includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W.
摘要翻译：根据一个实施例，磁阻元件包括第一和第二磁性层和第一非磁性层。第一磁性层具有垂直于膜平面的容易磁化的轴和可变磁化。第二磁性层具有垂直于膜平面的容易磁化的轴和不变的磁化。第一非磁性层设置在第一和第二磁性层之间。第二磁性层包括第三和第四磁性层，以及形成在第三和第四磁性层之间的第二非磁性层。第三磁性层与第一非磁性层接触，包括Co和Zr，Nb，Mo，Hf，Ta和W中的至少一种。

3. 发明授权

US08472242B2 Magnetoresistive effect memory 有权
标题翻译：磁阻效应记忆
公开(公告)号：US08472242B2
公开(公告)日：2013-06-25
申请号：US12748785
申请日：2010-03-29
申请人： Naoharu Shimomura , Eiji Kitagawa , Sumio Ikegawa , Yoshihisa Iwata
发明人： Naoharu Shimomura , Eiji Kitagawa , Sumio Ikegawa , Yoshihisa Iwata
IPC分类号： G11C11/14
CPC分类号： G11C11/1673 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/1693
摘要： A magnetoresistive effect memory of an aspect of the present invention including a magnetoresistive effect element including a first magnetic layer having an invariable magnetization direction, a second magnetic layer having a variable magnetization direction, and an interlayer provided between the first magnetic layer and the second magnetic layer, and a reading circuit which passes a pulse-shaped read current through the magnetoresistive effect element to read data stored in the magnetoresistive effect element, wherein the pulse width of the read current is shorter than a period from an initial state to a cooperative coherent precession movement of magnetizations included in the second magnetic layer.
摘要翻译：本发明的磁阻效应存储器包括磁阻效应元件，该磁阻效应元件包括具有不变磁化方向的第一磁性层，具有可变磁化方向的第二磁性层，以及设置在第一磁性层和第二磁性层之间的中间层以及读取电路，其使脉冲形读取电流通过磁阻效应元件以读取存储在磁阻效应元件中的数据，其中读取电流的脉冲宽度短于从初始状态到协作相干的周期包括在第二磁性层中的磁化的进动运动。

4. 发明授权

US08280706B2 Distributed processing-type simulator 有权
标题翻译：分布式处理型模拟器
公开(公告)号：US08280706B2
公开(公告)日：2012-10-02
申请号：US12869934
申请日：2010-08-27
申请人： Takuro Ikeda , Eiji Kitagawa , Hiroshi Yamada
发明人： Takuro Ikeda , Eiji Kitagawa , Hiroshi Yamada
IPC分类号： G06F17/10 , G06F15/16
CPC分类号： G06N3/006 , G06F17/5009 , G06F17/5095
摘要： A simulator simulates the behavior of a plurality of agents existing in the virtual space. Each of a plurality of calculators, communicable with one another, includes a space allocation storage that stores space allocation information, a space allocation control part that updates the space allocation information, an allocation change candidate space extracting part that extracts a divided space to be a candidate for the allocation change, a communication amount estimating part that calculates an amount of communication or an amount of change in communication generated between calculators based on the number of agents, a space allocation change judging part that determines whether or not to allocate a divided space to another calculator based on the amount of communication or the amount of change in communication, and a space allocation change executing part that requests the space allocation control part and other calculators to change the space allocation.
摘要翻译：模拟器模拟存在于虚拟空间中的多个代理的行为。可彼此通信的多个计算器中的每一个包括存储空间分配信息的空间分配存储器，更新空间分配信息的空间分配控制部分，提取分割空间的分配改变候选空间提取部分用于分配改变的候选者，通信量估计部分，其基于代理数量来计算在计算器之间生成的通信量或变化量的通信量估计部，确定是否分配分割空间的空间分配变化判断部基于通信量或通信量变化的另一个计算器，以及请求空间分配控制部分和其他计算器改变空间分配的空间分配改变执行部分。

5. 发明授权

US08223533B2 Magnetoresistive effect device and magnetic memory 有权
标题翻译：磁阻效应器和磁记忆体
公开(公告)号：US08223533B2
公开(公告)日：2012-07-17
申请号：US12556883
申请日：2009-09-10
申请人： Jyunichi Ozeki , Naoharu Shimomura , Sumio Ikegawa , Tadashi Kai , Masahiko Nakayama , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda , Eiji Kitagawa , Masatoshi Yoshikawa
发明人： Jyunichi Ozeki , Naoharu Shimomura , Sumio Ikegawa , Tadashi Kai , Masahiko Nakayama , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda , Eiji Kitagawa , Masatoshi Yoshikawa
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , G11C11/5607 , H01F10/123 , H01F10/3254 , H01F10/3277 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： A magnetic memory includes a magnetoresistive effect device comprising: a first ferromagnetic layer that has magnetic anisotropy in a direction perpendicular to a film plane thereof; a first nonmagnetic layer that is provided on the first ferromagnetic layer; a first reference layer that is provided on the first nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, has magnetization antiparallel to a magnetization direction of the first ferromagnetic layer, and has a film thickness that is 1/5.2 to 1/1.5 times as large as a film thickness of the first ferromagnetic layer in the direction perpendicular to the film plane; a second nonmagnetic layer that is provided on the first reference layer; and a storage layer that is provided on the second nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, and has a magnetization direction varied by spin-polarized electrons caused by flowing the current to the magnetoresistive effect device.
摘要翻译：磁存储器包括磁阻效应器件，包括：在垂直于其膜平面的方向上具有磁各向异性的第一铁磁层; 设置在第一铁磁层上的第一非磁性层; 设置在第一非磁性层上的第一参考层在垂直于其膜平面的方向上具有磁各向异性，具有与第一铁磁层的磁化方向反平行的磁化，并且具有1 / 5.2〜在第一铁磁层的垂直于膜平面的方向上的膜厚度的1/15倍; 设置在第一参考层上的第二非磁性层; 并且设置在第二非磁性层上的存储层在垂直于其膜平面的方向上具有磁各向异性，并且由于使电流流向磁阻效应器而引起的由自旋极化电子变化的磁化方向。

6. 发明授权

US08208292B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08208292B2
公开(公告)日：2012-06-26
申请号：US13342324
申请日：2012-01-03
申请人： Tadashi Kai , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
发明人： Tadashi Kai , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
IPC分类号： G11C11/00
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , Y10S977/935
摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.
摘要翻译：根据一个实施例，磁阻元件包括具有可变磁化的第一磁性层和在垂直于膜表面的垂直方向上的易轴，具有不变磁化的第二磁性层和垂直方向上的易轴，以及在第一和第二磁性层之间的第一非磁性层。第一磁性层包括铁磁材料，其包括Co和Pd或Co和Pt交替层压在原子紧密堆积的平面上的合金。第一磁性层具有指向垂直方向的C轴。并且通过流过第一磁性层，第一非磁性层和第二磁性层的电流改变第一磁性层的磁化方向。

7. 发明申请

US20120069640A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20120069640A1
公开(公告)日：2012-03-22
申请号：US13232782
申请日：2011-09-14
申请人： Toshihiko Nagase , Tadashi Kai , Makoto Nagamine , Katsuya Nishiyama , Eiji Kitagawa , Tadaomi Daibou , Koji Ueda , Hiroaki Yoda , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
发明人： Toshihiko Nagase , Tadashi Kai , Makoto Nagamine , Katsuya Nishiyama , Eiji Kitagawa , Tadaomi Daibou , Koji Ueda , Hiroaki Yoda , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
IPC分类号： G11C11/16
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element according to an embodiment includes: a first and second magnetic layers having an easy axis of magnetization in a direction perpendicular to a film plane; and a first nonmagnetic layer interposed between the first and second magnetic layers, at least one of the first and second magnetic layers including a structure formed by stacking a first and second magnetic films, the second magnetic film being located closer to the first nonmagnetic layer, the second magnetic film including a structure formed by repeating stacking of a magnetic material layer and a nonmagnetic material layer at least twice, the nonmagnetic material layers of the second magnetic film containing at least one element selected from the group consisting of Ta, W, Hf, Zr, Nb, Mo, Ti, V, and Cr, one of the first and second magnetic layers having a magnetization direction that is changed by applying a current.
摘要翻译：根据实施例的磁阻元件包括：在垂直于膜平面的方向上具有易磁化轴的第一和第二磁性层; 以及介于所述第一和第二磁性层之间的第一非磁性层，所述第一和第二磁性层中的至少一个包括通过堆叠第一和第二磁性膜形成的结构，所述第二磁性膜位于更靠近所述第一非磁性层的位置，所述第二磁性膜包括通过将磁性材料层和非磁性材料层重复堆叠至少两次形成的结构，所述第二磁性膜的非磁性材料层含有选自Ta，W，Hf中的至少一种元素，Zr，Nb，Mo，Ti，V和Cr中的一种，所述第一和第二磁性层之一具有通过施加电流而改变的磁化方向。

8. 发明授权

US08139405B2 Magnetoresistive element and magnetoresistive random access memory including the same 有权
标题翻译：磁阻元件和包括其的磁阻随机存取存储器
公开(公告)号：US08139405B2
公开(公告)日：2012-03-20
申请号：US13101818
申请日：2011-05-05
申请人： Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
发明人： Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： G11C11/00 , H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.
摘要翻译：本发明提供一种自旋注入型的低电阻磁阻元件。形成促进结晶的结晶促进层与具有非晶结构的界面磁性层接触，从而从隧道势垒层的侧面促进结晶化，并且调整隧道势垒层与界面磁性层之间的界面。通过这种布置，可以形成具有低电阻以获得期望电流值并且具有高TMR比的磁阻元件。

9. 发明申请

US20120008381A1 MAGNETORESISTIVE ELEMENT 有权
标题翻译：磁电元件
公开(公告)号：US20120008381A1
公开(公告)日：2012-01-12
申请号：US13233906
申请日：2011-09-15
申请人： Toshihiko NAGASE , Masatoshi Yoshikawa , Eiji Kitagawa , Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Hiroaki Yoda
发明人： Toshihiko NAGASE , Masatoshi Yoshikawa , Eiji Kitagawa , Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： G11C11/15 , G06K19/077 , H01L29/82
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≦Ms
摘要翻译：通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层。自由层的饱和磁化强度Ms满足关系0＆nlE; Ms <√{平方根超过（）} {Jw /（6＆pgr; At）}。 Jw是写入电流密度，t是自由层的厚度，A是常数。

10. 发明申请

US20110227179A1 MAGNETORESISTIVE ELEMENT, METHOD OF MANUFACTURING THE SAME, AND MAGNETIC MEMORY 有权
标题翻译：磁性元件，制造它们的方法和磁记忆
公开(公告)号：US20110227179A1
公开(公告)日：2011-09-22
申请号：US13050692
申请日：2011-03-17
申请人： Eiji KITAGAWA , Tadashi KAI , Tadaomi DAIBOU , Yutaka HASHIMOTO , Hiroaki YODA
发明人： Eiji KITAGAWA , Tadashi KAI , Tadaomi DAIBOU , Yutaka HASHIMOTO , Hiroaki YODA
IPC分类号： H01L29/82 , H01L21/8246
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： A magnetoresistive element according to an embodiment includes: a first magnetic layer; a tunnel barrier layer on the first magnetic layer; a second magnetic layer placed on the tunnel barrier layer and containing CoFe; and a nonmagnetic layer placed on the second magnetic layer, and containing nitrogen and at least one element selected from the group consisting of B, Ta, Zr, Al, and Ce.
摘要翻译：根据实施例的磁阻元件包括：第一磁性层; 在第一磁性层上的隧道阻挡层; 放置在隧道势垒层上并含有CoFe的第二磁性层; 以及放置在第二磁性层上的非磁性层，并含有氮和选自B，Ta，Zr，Al和Ce中的至少一种元素。

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