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1. 发明申请

US20120241881A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20120241881A1
公开(公告)日：2012-09-27
申请号：US13310154
申请日：2011-12-02
申请人： Tadaomi DAIBOU , Junichi Ito , Tadashi Kai , Minoru Amano , Hiroaki Yoda , Terunobu Miyazaki , Shigemi Mizukami , Koji Ando , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Akio Fukushima , Taro Nagahama , Takahide Kubota
发明人： Tadaomi DAIBOU , Junichi Ito , Tadashi Kai , Minoru Amano , Hiroaki Yoda , Terunobu Miyazaki , Shigemi Mizukami , Koji Ando , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Akio Fukushima , Taro Nagahama , Takahide Kubota
IPC分类号： H01L43/10
CPC分类号： H01L43/10 , H01L23/528 , H01L27/222 , H01L27/226 , H01L43/02 , H01L43/08 , H01L2924/0002 , H01L2924/00
摘要： A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45≦x
摘要翻译：根据实施例的磁阻元件包括：基底层; 第一磁性层，其形成在所述基底层上，并且包括在垂直于膜平面的方向上具有容易磁化的轴的第一磁性膜，所述第一磁性膜包括Mn x Ga 100-x（45≤n1E; x <64原子％）; 形成在第一磁性层上的第一非磁性层; 以及形成在所述第一非磁性层上的第二磁性层，并且包括在垂直于膜平面的方向上具有容易磁化的轴的第二磁性膜，所述第二磁性膜包括MnyGa100-y（45＆lt; IL1; y <64原子％），。第一和第二磁性层包括彼此不同的Mn组成比，第一磁性层的磁化方向可以通过第一非磁性层在第一磁性层和第二磁性层之间流动的电流而改变。

2. 发明授权

US08680632B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08680632B2
公开(公告)日：2014-03-25
申请号：US13310154
申请日：2011-12-02
申请人： Tadaomi Daibou , Junichi Ito , Tadashi Kai , Minoru Amano , Hiroaki Yoda , Terunobu Miyazaki , Shigemi Mizukami , Koji Ando , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Akio Fukushima , Taro Nagahama , Takahide Kubota
发明人： Tadaomi Daibou , Junichi Ito , Tadashi Kai , Minoru Amano , Hiroaki Yoda , Terunobu Miyazaki , Shigemi Mizukami , Koji Ando , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Akio Fukushima , Taro Nagahama , Takahide Kubota
IPC分类号： H01L29/82 , G11C11/00
CPC分类号： H01L43/10 , H01L23/528 , H01L27/222 , H01L27/226 , H01L43/02 , H01L43/08 , H01L2924/0002 , H01L2924/00
摘要： A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45≦x
摘要翻译：根据实施例的磁阻元件包括：基底层; 第一磁性层，其形成在所述基底层上，并且包括在垂直于膜平面的方向上具有容易磁化的轴的第一磁性膜，所述第一磁性膜包括Mn x Ga 100-x（45≤n1E; x <64原子％）; 形成在第一磁性层上的第一非磁性层; 以及形成在所述第一非磁性层上的第二磁性层，并且包括在垂直于膜平面的方向上具有容易磁化的轴的第二磁性膜，所述第二磁性膜包括MnyGa100-y（45＆lt; IL1; y <64原子％），。第一和第二磁性层包括彼此不同的Mn组成比，第一磁性层的磁化方向可以通过第一非磁性层在第一磁性层和第二磁性层之间流动的电流而改变。

3. 发明授权

US08895162B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08895162B2
公开(公告)日：2014-11-25
申请号：US13236028
申请日：2011-09-19
申请人： Katsuya Nishiyama , Shigemi Mizukami , Terunobu Miyazaki , Hiroaki Yoda , Tadashi Kai , Tatsuya Kishi , Daisuke Watanabe , Mikihiko Oogane , Yasuo Ando , Masatoshi Yoshikawa , Toshihiko Nagase , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Chunlan Feng
发明人： Katsuya Nishiyama , Wu Feng , Shigemi Mizukami , Terunobu Miyazaki , Hiroaki Yoda , Tadashi Kai , Tatsuya Kishi , Daisuke Watanabe , Mikihiko Oogane , Yasuo Ando , Masatoshi Yoshikawa , Toshihiko Nagase , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine
IPC分类号： G01R33/09 , H01L43/08 , H01F10/32 , H01L43/10 , H01F10/193 , G11C11/16 , H01L27/22 , B82Y25/00 , H01F10/28
CPC分类号： H01L27/228 , B82Y25/00 , G01R33/09 , G11C11/16 , G11C11/161 , H01F10/123 , H01F10/1933 , H01F10/1936 , H01F10/28 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L43/08 , H01L43/10 , Y10T428/1121 , Y10T428/1143
摘要： A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.
摘要翻译：根据实施例的磁阻元件包括：基底层; 第一磁性层，形成在所述基底层上，并且具有在垂直于膜平面的方向上具有容易的磁化轴的可变磁化方向; 形成在第一磁性层上的第一非磁性层; 以及形成在第一非磁性层上并且具有在垂直于膜平面的方向上具有易磁化轴的固定磁化层的第二磁性层。第一磁性层包括具有DO22结构或L10结构的铁氧体层，所述铁氧体层具有在垂直于所述膜平面的方向上取向的c轴，并且所述第一磁性层的磁化方向可以由电流流过通过第一磁性层，第一非磁性层和第二磁性层。

4. 发明申请

US20120088125A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20120088125A1
公开(公告)日：2012-04-12
申请号：US13236028
申请日：2011-09-19
申请人： Katsuya NISHIYAMA , Wu Feng , Chunlan Feng , Shigemi Mizukami , Terunobu Miyazaki , Hiroaki Yoda , Tadashi Kai , Tatsuya Kishi , Daisuke Watanabe , Mikihiko Oogane , Yasuo Ando , Masatoshi Yoshikawa , Toshihiko Nagase , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine
发明人： Katsuya NISHIYAMA , Wu Feng , Chunlan Feng , Shigemi Mizukami , Terunobu Miyazaki , Hiroaki Yoda , Tadashi Kai , Tatsuya Kishi , Daisuke Watanabe , Mikihiko Oogane , Yasuo Ando , Masatoshi Yoshikawa , Toshihiko Nagase , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine
IPC分类号： G11B5/66
CPC分类号： H01L27/228 , B82Y25/00 , G01R33/09 , G11C11/16 , G11C11/161 , H01F10/123 , H01F10/1933 , H01F10/1936 , H01F10/28 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L43/08 , H01L43/10 , Y10T428/1121 , Y10T428/1143
摘要： A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.
摘要翻译：根据实施例的磁阻元件包括：基底层; 第一磁性层，形成在所述基底层上，并且具有在垂直于膜平面的方向上具有容易的磁化轴的可变磁化方向; 形成在第一磁性层上的第一非磁性层; 以及形成在第一非磁性层上并且具有在垂直于膜平面的方向上具有易磁化轴的固定磁化层的第二磁性层。第一磁性层包括具有DO22结构或L10结构的铁氧体层，所述铁氧体层具有在垂直于所述膜平面的方向上取向的c轴，并且所述第一磁性层的磁化方向可以由电流流过通过第一磁性层，第一非磁性层和第二磁性层。

5. 发明授权

US08520433B1 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08520433B1
公开(公告)日：2013-08-27
申请号：US13623405
申请日：2012-09-20
申请人： Yushi Kato , Tadaomi Daibou , Eiji Kitagawa , Takahide Kubota , Shigemi Mizukami , Terunobu Miyazaki
发明人： Yushi Kato , Tadaomi Daibou , Eiji Kitagawa , Takahide Kubota , Shigemi Mizukami , Terunobu Miyazaki
IPC分类号： G11C11/14
CPC分类号： G11C11/16 , G11C11/161
摘要： A magnetoresistive element according to an embodiment includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, at least one of the first magnetic layer and the second magnetic layer including a magnetic film of MnxAlyGez (10 atm %≦x≦44 atm %, 10 atm %≦y≦65 atm %, 10 atm %≦z≦80 atm %, x+y+z=100 atm %).
摘要翻译：根据实施例的磁阻元件包括第一磁性层，第二磁性层和设置在第一磁性层和第二磁性层之间的第一非磁性层，第一磁性层和第二磁性层中的至少一个包括 MnxAlyGez的磁性膜（10atm％@ x @ 44atm％，10atm％@y @ 65 atm％，10atm％@ z @ 80atm％，x + y + z = 100atm％）。

6. 发明授权

US06535364B1 Magnetic resistance element having four magnetization states and a magnetic device using the same 有权
标题翻译：具有四个磁化状态的磁阻元件和使用其的磁性装置
公开(公告)号：US06535364B1
公开(公告)日：2003-03-18
申请号：US09482914
申请日：2000-01-14
申请人： Seiji Kumagai , Yoshito Ikeda , Terunobu Miyazaki , Yoshiyuki Fukumoto
发明人： Seiji Kumagai , Yoshito Ikeda , Terunobu Miyazaki , Yoshiyuki Fukumoto
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/06 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , G11C11/5607 , G11C2211/5615 , H01F10/3254 , H01F10/3268
摘要： A magnetic resistance element is provided that includes an upper magnetic layer, which is formed in contact with an anti-ferromagnetic layer, and at least two magnetic layers that are layered with tunnel barrier wall layers respectively inserted between the first magnetic layer and each of the at least two magnetic layers such that the magnetic resistance element has a combined resistance that corresponds to one of four predefined magnetic resistances and that can be changed to another of the four predefined magnetic resistances by applying a predefined recording magnetic field pattern to the magnetic resistance element.
摘要翻译：提供了一种磁阻元件，其包括形成为与反铁磁层接触的上磁性层，以及分别插入在第一磁性层和第一磁性层之间的隧道阻挡壁层的至少两个磁性层至少两个磁性层，使得磁阻元件具有对应于四个预定义的磁阻之一的组合电阻，并且可以通过将预定义的记录磁场图案施加到磁阻元件上而改变为四个预定义的磁阻中的另一个。

7. 发明授权

US5309109A Forcible grounding generation equipment and grounding occurrence detection equipment using the same 失效
标题翻译：强制接地发电设备及接地事故检测设备采用相同方式
公开(公告)号：US5309109A
公开(公告)日：1994-05-03
申请号：US846680
申请日：1992-03-05
申请人： Terunobu Miyazaki , Kazuo Nishijima
发明人： Terunobu Miyazaki , Kazuo Nishijima
IPC分类号： H02H3/34 , G01R31/02 , H02H7/26 , G01R31/14
CPC分类号： G01R31/025
摘要： By forcibly grounding a selected one of three phases of a three-phase power distribution line, a higher line-to-ground voltage is applied to other phases thereby causing very small-scale grounding at a fault position so that the fault position can be specified by detecting the small-scale grounding current as generated.
摘要翻译：通过强制地将三相配电线路的三相中的一个强制接地，将较高的线对地电压施加到其它相，从而在故障位置引起非常小规模的接地，从而可以指定故障位置通过检测产生的小规模接地电流。

8. 发明授权

US4833044A Film type magnetic recording medium 失效
标题翻译：薄膜式磁记录介质
公开(公告)号：US4833044A
公开(公告)日：1989-05-23
申请号：US614872
申请日：1984-05-29
申请人： Minoru Takahashi , Terunobu Miyazaki , Susumu Shinagawa , Yuudou Abe , Yoshinobu Saitou
发明人： Minoru Takahashi , Terunobu Miyazaki , Susumu Shinagawa , Yuudou Abe , Yoshinobu Saitou
IPC分类号： C22C19/07 , C22C38/00 , C22C38/46 , G11B5/64 , G11B5/706 , G11B5/73 , H01F10/16
CPC分类号： G11B5/64 , Y10S428/90 , Y10T428/12465 , Y10T428/31507 , Y10T428/31786
摘要： A film type magnetic recording medium comprising as a magnetic recording layer an iron-cobalt-nickel-chromium magnetic alloy containing 10-51 wt. % cobalt, 1-30 wt. % nickel, 1-10 wt. % of chromium and 6 wt. % or less of at least one of the elements molybdenum, tungsten, vanadium, niobium, tantalum, copper, titanium and zirconium, high in durability and magnetic property, and moreover, capable of easily forming a magnetic alloy film thereon by vacuum deposition.
摘要翻译：一种膜型磁记录介质，其包含含有10-51重量％的铁 - 钴 - 镍 - 铬磁性合金作为磁记录层。％钴，1-30重量％％镍，1-10重量％％的铬和6wt。至少一种元素钼，钨，钒，铌，钽，铜，钛和锆中的至少一种，耐久性和磁性能高，此外，能够通过真空沉积容易地在其上形成磁性合金膜。

9. 发明授权

US4806929A Remote monitor control system 失效
标题翻译：远程监控系统
公开(公告)号：US4806929A
公开(公告)日：1989-02-21
申请号：US32446
申请日：1987-03-31
申请人： Kazuo Nishijima , Terunobu Miyazaki , Eisaburo Sakou
发明人： Kazuo Nishijima , Terunobu Miyazaki , Eisaburo Sakou
IPC分类号： G05B15/02 , H02J13/00 , H04B3/54 , H04Q9/00 , H04Q9/02 , G05B23/02
CPC分类号： H02J13/0031 , H04B3/546 , H04B2203/5458 , H04B2203/5466 , H04B2203/5495 , Y02E60/7892 , Y04S40/146
摘要： A remote monitor control system comprises a single master station having the function of communication in synchronism with communication clocks for generating various commands required for monitor and control, and a plurality of terminal stations having the function of communication in synchronism with the communication clocks for receiving data related to objects of monitor and controlling objects of control. The terminal stations are caused to respond at different time points sequentially predetermined different times after transmission from the master station. When a sync signal fails to be received for a predetermined length of time, the predetermined time set for a particular station is shortened.
摘要翻译：远程监视器控制系统包括具有与用于生成监视和控制所需的各种命令的通信时钟同步的通信功能的单个主站以及具有与用于接收数据的通信时钟同步的通信功能的多个终端站与监控对象和控制对象有关。使终端在从主站发送之后，在不同的时间点顺序地预定的不同时间进行响应。当同步信号在预定长度的时间内不能被接收时，为特定站设置的预定时间被缩短。

10. 发明授权

US5579195A Power stoppage minimizing systems for distribution lines and methods of using a distribution line 失效
标题翻译：电力停止最小化配电线路系统和使用配电线路的方法
公开(公告)号：US5579195A
公开(公告)日：1996-11-26
申请号：US207664
申请日：1994-03-09
申请人： Kazuo Nishijima , Hiroshi Inoue , Minoru Kanoi , Terunobu Miyazaki , Mitsuru Nakamura
发明人： Kazuo Nishijima , Hiroshi Inoue , Minoru Kanoi , Terunobu Miyazaki , Mitsuru Nakamura
IPC分类号： H02H3/06 , H02H7/26 , H02J3/04 , H02H3/00
CPC分类号： H02H7/262
摘要： A power stoppage minimizing system for a distribution line and a method of using a distribution line minimize a power stoppage section and a power stoppage time when a short circuit occurs in the distribution line, and employs a first and a second distribution line each connected through a circuit breaker to a corresponding bus and each having switches in position thereon; a normally open tie point switchgear provided between adjacent ends of the first and second distribution lines; a protective relay for opening, when a short circuit has occurred, the circuit breaker a fixed time after the occurrence of the short circuit on the first distribution line; a first unit for opening a switch on the side of a power source and nearest a point where the short circuit has occurred; a second unit for opening, after the switch is opened by the first unit, a switch on the side of a load nearest the switch opened by the first unit; and a third unit for closing the tie point switchgear after the opening of the switch by the second unit, the opening of the switch by the first unit being made within a fixed interval of time for the protective relay. Thus, the short circuit section is located and the switches before and after the short circuit section are opened. The tie point switchgear is then closed to thereby minimize the power stoppage section and time when the short circuit has occurred.
摘要翻译：用于配电线路的停电最小化系统和使用配电线路的方法在分配线路中发生短路时最小化停电部分和停电时间，并且采用第一和第二配电线路，每个分配线路通过断路器到相应的总线，并且每个断路器具有位于其上的开关; 设置在所述第一和第二配线的相邻端之间的常开连接点开关装置; 一个保护继电器，当发生短路时，断路器在第一配线上发生短路之后的固定时间; 用于打开电源侧的开关并且最靠近发生短路的点的第一单元; 第二单元，在由第一单元打开开关之后，打开最靠近由第一单元打开的开关的负载侧的开关; 以及第三单元，用于在通过第二单元打开开关之后关闭连接点开关装置，第一单元的开关的开启在保护继电器的固定时间间隔内被制成。因此，短路部分被定位，并且短路部分之前和之后的开关被打开。然后将连接点开关装置关闭，从而最小化停电部分和发生短路时的时间。

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