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1. 发明申请

US20120241881A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20120241881A1
公开(公告)日：2012-09-27
申请号：US13310154
申请日：2011-12-02
申请人： Tadaomi DAIBOU , Junichi Ito , Tadashi Kai , Minoru Amano , Hiroaki Yoda , Terunobu Miyazaki , Shigemi Mizukami , Koji Ando , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Akio Fukushima , Taro Nagahama , Takahide Kubota
发明人： Tadaomi DAIBOU , Junichi Ito , Tadashi Kai , Minoru Amano , Hiroaki Yoda , Terunobu Miyazaki , Shigemi Mizukami , Koji Ando , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Akio Fukushima , Taro Nagahama , Takahide Kubota
IPC分类号： H01L43/10
CPC分类号： H01L43/10 , H01L23/528 , H01L27/222 , H01L27/226 , H01L43/02 , H01L43/08 , H01L2924/0002 , H01L2924/00
摘要： A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45≦x
摘要翻译：根据实施例的磁阻元件包括：基底层; 第一磁性层，其形成在所述基底层上，并且包括在垂直于膜平面的方向上具有容易磁化的轴的第一磁性膜，所述第一磁性膜包括Mn x Ga 100-x（45≤n1E; x <64原子％）; 形成在第一磁性层上的第一非磁性层; 以及形成在所述第一非磁性层上的第二磁性层，并且包括在垂直于膜平面的方向上具有容易磁化的轴的第二磁性膜，所述第二磁性膜包括MnyGa100-y（45＆lt; IL1; y <64原子％），。第一和第二磁性层包括彼此不同的Mn组成比，第一磁性层的磁化方向可以通过第一非磁性层在第一磁性层和第二磁性层之间流动的电流而改变。

2. 发明授权

US08680632B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08680632B2
公开(公告)日：2014-03-25
申请号：US13310154
申请日：2011-12-02
申请人： Tadaomi Daibou , Junichi Ito , Tadashi Kai , Minoru Amano , Hiroaki Yoda , Terunobu Miyazaki , Shigemi Mizukami , Koji Ando , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Akio Fukushima , Taro Nagahama , Takahide Kubota
发明人： Tadaomi Daibou , Junichi Ito , Tadashi Kai , Minoru Amano , Hiroaki Yoda , Terunobu Miyazaki , Shigemi Mizukami , Koji Ando , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Akio Fukushima , Taro Nagahama , Takahide Kubota
IPC分类号： H01L29/82 , G11C11/00
CPC分类号： H01L43/10 , H01L23/528 , H01L27/222 , H01L27/226 , H01L43/02 , H01L43/08 , H01L2924/0002 , H01L2924/00
摘要： A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45≦x
摘要翻译：根据实施例的磁阻元件包括：基底层; 第一磁性层，其形成在所述基底层上，并且包括在垂直于膜平面的方向上具有容易磁化的轴的第一磁性膜，所述第一磁性膜包括Mn x Ga 100-x（45≤n1E; x <64原子％）; 形成在第一磁性层上的第一非磁性层; 以及形成在所述第一非磁性层上的第二磁性层，并且包括在垂直于膜平面的方向上具有容易磁化的轴的第二磁性膜，所述第二磁性膜包括MnyGa100-y（45＆lt; IL1; y <64原子％），。第一和第二磁性层包括彼此不同的Mn组成比，第一磁性层的磁化方向可以通过第一非磁性层在第一磁性层和第二磁性层之间流动的电流而改变。

3. 发明申请

US20090224342A1 MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：US20090224342A1
公开(公告)日：2009-09-10
申请号：US12248484
申请日：2008-10-09
申请人： Masahiko NAKAYAMA , Kay Yakushiji , Sumio Ikegawa , Shinji Yuasa , Tadashi Kai , Toshihiko Nagase , Minoru Amano , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda
发明人： Masahiko NAKAYAMA , Kay Yakushiji , Sumio Ikegawa , Shinji Yuasa , Tadashi Kai , Toshihiko Nagase , Minoru Amano , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/15 , G11C11/1659 , G11C11/1675 , H01F10/123 , H01F10/325 , H01F10/3254 , H01F10/3286 , H01L43/08
摘要： A magnetoresistive effect element includes a reference layer, a recording layer, and a nonmagnetic layer. The reference layer is made of a magnetic material, has an invariable magnetization which is perpendicular to a film surface. The recording layer is made of a magnetic material, has a variable magnetization which is perpendicular to the film surface. The nonmagnetic layer is arranged between the reference layer and the recording layer. A critical diameter which is determined by magnetic anisotropy, saturation magnetization, and switched connection of the recording layer and has a single-domain state as a unique stable state or a critical diameter which has a single-domain state as a unique stable state and is inverted while keeping the single-domain state in an inverting process is larger than an element diameter of the magnetoresistive effect element.
摘要翻译：磁阻效应元件包括参考层，记录层和非磁性层。参考层由磁性材料制成，具有垂直于膜表面的不变磁化。记录层由磁性材料制成，具有垂直于膜表面的可变磁化强度。非磁性层布置在参考层和记录层之间。临界直径由磁各向异性，饱和磁化强度和记录层的开关连接确定，并且具有作为独特稳定状态的单畴状态或具有单域状态作为唯一稳定状态的临界直径，并且是在反转过程中保持单畴状态的反转大于磁阻效应元件的元件直径。

4. 发明授权

US08378437B2 Magnetoresistive effect element and magnetic random access memory 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：US08378437B2
公开(公告)日：2013-02-19
申请号：US12248484
申请日：2008-10-09
申请人： Masahiko Nakayama , Kay Yakushiji , Sumio Ikegawa , Shinji Yuasa , Tadashi Kai , Toshihiko Nagase , Minoru Amano , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda
发明人： Masahiko Nakayama , Kay Yakushiji , Sumio Ikegawa , Shinji Yuasa , Tadashi Kai , Toshihiko Nagase , Minoru Amano , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/15 , G11C11/1659 , G11C11/1675 , H01F10/123 , H01F10/325 , H01F10/3254 , H01F10/3286 , H01L43/08
摘要： A magnetoresistive effect element includes a reference layer, a recording layer, and a nonmagnetic layer. The reference layer is made of a magnetic material, has an invariable magnetization which is perpendicular to a film surface. The recording layer is made of a magnetic material, has a variable magnetization which is perpendicular to the film surface. The nonmagnetic layer is arranged between the reference layer and the recording layer. A critical diameter which is determined by magnetic anisotropy, saturation magnetization, and switched connection of the recording layer and has a single-domain state as a unique stable state or a critical diameter which has a single-domain state as a unique stable state and is inverted while keeping the single-domain state in an inverting process is larger than an element diameter of the magnetoresistive effect element.
摘要翻译：磁阻效应元件包括参考层，记录层和非磁性层。参考层由磁性材料制成，具有垂直于膜表面的不变磁化。记录层由磁性材料制成，具有垂直于膜表面的可变磁化强度。非磁性层布置在参考层和记录层之间。临界直径由磁各向异性，饱和磁化强度和记录层的开关连接确定，并且具有作为独特稳定状态的单畴状态或具有单域状态作为唯一稳定状态的临界直径，并且是在反转过程中保持单畴状态的反转大于磁阻效应元件的元件直径。

5. 发明申请

US20120241827A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20120241827A1
公开(公告)日：2012-09-27
申请号：US13210678
申请日：2011-08-16
申请人： Tadaomi DAIBOU , Minoru Amano , Daisuke Saida , Junichi Ito , Yuichi Ohsawa , Chikayoshi Kamata , Saori Kashiwada , Hiroaki Yoda
发明人： Tadaomi DAIBOU , Minoru Amano , Daisuke Saida , Junichi Ito , Yuichi Ohsawa , Chikayoshi Kamata , Saori Kashiwada , Hiroaki Yoda
IPC分类号： H01L27/22 , H01L43/10 , H01L43/02
CPC分类号： H01L43/02 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.
摘要翻译：根据实施例的磁阻元件包括：第一至第三铁磁层和第一非磁性层，第一和第二铁磁层各自在垂直于膜平面的方向上具有容易磁化的轴，所述第三铁磁层包括多个铁磁振荡器产生彼此不同振荡频率的旋转磁场。旋转极化电子被注入到第一铁磁层中并通过在第一和第三铁磁层之间流动电流而引起第三铁磁层的多个铁磁振荡器中的进动运动，旋转磁场由进动运动产生，并且是施加到第一铁磁层，并且至少一个旋转磁场有助于第一铁磁层中的磁化切换。

6. 发明授权

US08878317B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08878317B2
公开(公告)日：2014-11-04
申请号：US13210678
申请日：2011-08-16
申请人： Tadaomi Daibou , Minoru Amano , Daisuke Saida , Junichi Ito , Yuichi Ohsawa , Chikayoshi Kamata , Saori Kashiwada , Hiroaki Yoda
发明人： Tadaomi Daibou , Minoru Amano , Daisuke Saida , Junichi Ito , Yuichi Ohsawa , Chikayoshi Kamata , Saori Kashiwada , Hiroaki Yoda
IPC分类号： H01L29/82 , H01L43/10 , H01F10/32 , H01L43/08 , H01L27/22
CPC分类号： H01L43/02 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.
摘要翻译：根据实施例的磁阻元件包括：第一至第三铁磁层和第一非磁性层，第一和第二铁磁层各自在垂直于膜平面的方向上具有容易磁化的轴，所述第三铁磁层包括多个铁磁振荡器产生彼此不同振荡频率的旋转磁场。旋转极化电子被注入到第一铁磁层中并通过在第一和第三铁磁层之间流动电流而引起第三铁磁层的多个铁磁振荡器中的进动运动，旋转磁场由进动运动产生，并且是施加到第一铁磁层，并且至少一个旋转磁场有助于第一铁磁层中的磁化切换。

7. 发明授权

US08508979B2 Magnetic recording element and nonvolatile memory device 失效
标题翻译：磁记录元件和非易失性存储器件
公开(公告)号：US08508979B2
公开(公告)日：2013-08-13
申请号：US13228040
申请日：2011-09-08
申请人： Daisuke Saida , Minoru Amano , Junichi Ito , Yuichi Ohsawa , Saori Kashiwada , Chikayoshi Kamata , Tadaomi Daibou
发明人： Daisuke Saida , Minoru Amano , Junichi Ito , Yuichi Ohsawa , Saori Kashiwada , Chikayoshi Kamata , Tadaomi Daibou
IPC分类号： G11C11/00
CPC分类号： G11B5/66 , G11C11/161 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetic recording element includes a stacked body. The stacked body includes a first and a second stacked unit. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit is stacked with the first stacked unit and includes third and fourth ferromagnetic layers and a second nonmagnetic layer. The fourth ferromagnetic layer is stacked with the third ferromagnetic layer. The second nonmagnetic layer is provided between the third and fourth ferromagnetic layers. An outer edge of the fourth ferromagnetic layer includes a portion outside an outer edge of the first stacked unit in a plane. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a rotating magnetic field to act on the second ferromagnetic layer.
摘要翻译：根据一个实施例，磁记录元件包括堆叠体。堆叠体包括第一和第二堆叠单元。第一堆叠单元包括第一和第二铁磁层和第一非磁性层。第一非磁性层设置在第一和第二铁磁层之间。第二堆叠单元与第一堆叠单元堆叠并且包括第三和第四铁磁层和第二非磁性层。第四铁磁层与第三铁磁层层叠。第二非磁性层设置在第三和第四铁磁层之间。第四铁磁层的外边缘包括平面内第一堆叠单元的外边缘外侧的部分。通过使自旋极化电子和旋转磁场作用于第二铁磁层来确定第二铁磁层的磁化方向。

8. 发明授权

US08576616B2 Magnetic element and nonvolatile memory device 失效
标题翻译：磁性元件和非易失性存储器件
公开(公告)号：US08576616B2
公开(公告)日：2013-11-05
申请号：US13227959
申请日：2011-09-08
申请人： Daisuke Saida , Minoru Amano , Junichi Ito , Yuichi Ohsawa , Saori Kashiwada , Chikayoshi Kamata , Tadaomi Daibou
发明人： Daisuke Saida , Minoru Amano , Junichi Ito , Yuichi Ohsawa , Saori Kashiwada , Chikayoshi Kamata , Tadaomi Daibou
IPC分类号： G11C11/00
CPC分类号： G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetic element includes first and second conductive layers, an intermediate interconnection, and first and second stacked units. The intermediate interconnection is provided between the conductive layers. The first stacked unit is provided between the first conductive layer and the interconnection, and includes first and second ferromagnetic layer and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second stacked unit is provided between the second conductive layer and the interconnection, and includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a magnetic field to act on the second ferromagnetic layer.
摘要翻译：根据一个实施例，磁性元件包括第一和第二导电层，中间互连以及第一和第二堆叠单元。中间互连设置在导电层之间。第一层叠单元设置在第一导电层和互连之间，并且包括第一和第二铁磁层和设置在第一和第二铁磁层之间的第一非磁性层。第二堆叠单元设置在第二导电层和互连之间，并且包括第三和第四铁磁层以及设置在第三和第四铁磁层之间的第二非磁性层。通过使自旋极化电子和磁场作用于第二铁磁层来确定第二铁磁层的磁化方向。

9. 发明申请

US20130249028A1 MAGNETIC MEMORY AND METHOD OF FABRICATING THE SAME 有权
标题翻译：磁记忆及其制造方法
公开(公告)号：US20130249028A1
公开(公告)日：2013-09-26
申请号：US13623306
申请日：2012-09-20
申请人： Chikayoshi KAMATA , Minoru Amano , Tadaomi Daibou , Junichi Ito
发明人： Chikayoshi KAMATA , Minoru Amano , Tadaomi Daibou , Junichi Ito
IPC分类号： H01L43/12 , H01L27/22
CPC分类号： H01L43/10 , H01F10/1933 , H01F10/30 , H01F10/3286 , H01F41/302 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A method of fabricating a magnetic memory according to an embodiment includes: forming a separation layer on a first substrate; sequentially forming a first ferromagnetic layer, a first nonmagnetic layer, and a second ferromagnetic layer on the separation layer, at least one of the first and the second ferromagnetic layers having a single crystal structure; forming a first conductive bonding layer on the second ferromagnetic layer; forming a second conductive bonding layer on a second substrate, on which a transistor and a wiring are formed, the second conductive bonding layer electrically connecting to the transistor; arranging the first and second substrate so that the first conductive bonding layer and the second conductive bonding layer are opposed to each other, and bonding the first and the second conductive bonding layers to each other; and separating the first substrate from the first ferromagnetic layer by using the separation layer.
摘要翻译：根据实施例的制造磁存储器的方法包括：在第一基板上形成分离层; 在分离层上顺序地形成第一铁磁层，第一非磁性层和第二铁磁层，第一和第二铁磁层中的至少一个具有单晶结构; 在所述第二铁磁层上形成第一导电接合层; 在其上形成有晶体管和布线的第二基板上形成第二导电接合层，所述第二导电接合层电连接到所述晶体管; 布置第一和第二基板，使得第一导电接合层和第二导电接合层彼此相对，并且将第一和第二导电接合层彼此接合; 以及通过使用所述分离层将所述第一基板与所述第一铁磁层分离。

10. 发明授权

US08841139B2 Magnetic memory and method of fabricating the same 有权
标题翻译：磁存储器及其制造方法
公开(公告)号：US08841139B2
公开(公告)日：2014-09-23
申请号：US13623306
申请日：2012-09-20
申请人： Chikayoshi Kamata , Minoru Amano , Tadaomi Daibou , Junichi Ito
发明人： Chikayoshi Kamata , Minoru Amano , Tadaomi Daibou , Junichi Ito
IPC分类号： H01L21/00
CPC分类号： H01L43/10 , H01F10/1933 , H01F10/30 , H01F10/3286 , H01F41/302 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A method of fabricating a magnetic memory according to an embodiment includes: forming a separation layer on a first substrate; sequentially forming a first ferromagnetic layer, a first nonmagnetic layer, and a second ferromagnetic layer on the separation layer, at least one of the first and the second ferromagnetic layers having a single crystal structure; forming a first conductive bonding layer on the second ferromagnetic layer; forming a second conductive bonding layer on a second substrate, on which a transistor and a wiring are formed, the second conductive bonding layer electrically connecting to the transistor; arranging the first and second substrate so that the first conductive bonding layer and the second conductive bonding layer are opposed to each other, and bonding the first and the second conductive bonding layers to each other; and separating the first substrate from the first ferromagnetic layer by using the separation layer.
摘要翻译：根据实施例的制造磁存储器的方法包括：在第一基板上形成分离层; 在分离层上顺序地形成第一铁磁层，第一非磁性层和第二铁磁层，第一和第二铁磁层中的至少一个具有单晶结构; 在所述第二铁磁层上形成第一导电接合层; 在其上形成有晶体管和布线的第二基板上形成第二导电接合层，所述第二导电接合层电连接到所述晶体管; 布置第一和第二基板，使得第一导电接合层和第二导电接合层彼此相对，并且将第一和第二导电接合层彼此接合; 以及通过使用所述分离层将所述第一基板与所述第一铁磁层分离。

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