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1. 发明申请

US20110259879A1 Multi-Zone Induction Heating for Improved Temperature Uniformity in MOCVD and HVPE Chambers 审中-公开
标题翻译：多区域感应加热用于改善MOCVD和HVPE室中的温度均匀性
公开(公告)号：US20110259879A1
公开(公告)日：2011-10-27
申请号：US13092800
申请日：2011-04-22
申请人： Hiroji Hanawa , Kyawwin Jason Maung , Karl Brown
发明人： Hiroji Hanawa , Kyawwin Jason Maung , Karl Brown
IPC分类号： H05B6/10 , C23C16/458 , C30B35/00 , C23C16/46
CPC分类号： H05B6/105 , C23C16/4584 , C23C16/46 , C30B25/10
摘要： Embodiments of the invention generally relate to apparatuses and methods for utilizing a plurality of induction heat sources to uniformly heat a plurality of substrates within a processing chamber. By utilizing multiple heating zones that are each separately powered, the temperature distribution across the susceptor, over which the substrates rotate, may be uniform. The heat sources may be disposed outside of the processing chamber. In one embodiment, a processing chamber is provided which includes a susceptor disposed adjacent a first side of a window, a substrate carrier coupled with the susceptor, an inner inductive heating element disposed adjacent a second side of the window opposite the first side, an outer inductive heating element separate from and encompassing the inner inductive heating element and disposed adjacent to the second side of the window, and a parasitic load ring positioned below the outer inductive heating element.
摘要翻译：本发明的实施例一般涉及利用多个感应热源来均匀加热处理室内的多个基板的装置和方法。通过利用各自分别供电的多个加热区，基板旋转的基座上的温度分布可以是均匀的。热源可以设置在处理室的外部。在一个实施例中，提供了处理室，其包括邻近窗口的第一侧设置的基座，与基座耦合的基板载体，与第一侧相对的第二侧附近设置的内部感应加热元件，感应加热元件与内部感应加热元件分离并且包围内部感应加热元件并且邻近窗口的第二侧设置，以及位于外部感应加热元件下方的寄生负载环。

2. 发明申请

US20120258580A1 PLASMA-ASSISTED MOCVD FABRICATION OF P-TYPE GROUP III-NITRIDE MATERIALS 审中-公开
标题翻译： P型III型氮化物材料的等离子体辅助MOCVD制造
公开(公告)号：US20120258580A1
公开(公告)日：2012-10-11
申请号：US13413009
申请日：2012-03-06
申请人： Karl Brown , Kevin Griffin , David Bour , Olga Kryliouk
发明人： Karl Brown , Kevin Griffin , David Bour , Olga Kryliouk
IPC分类号： H01L21/205 , C23C16/56 , C23C16/50
CPC分类号： H01L21/0262 , C23C16/303 , C23C16/452 , C23C16/56 , H01L21/0237 , H01L21/0254 , H01L21/02579 , H01L33/007
摘要： The plasma-assisted metal-organic chemical vapor deposition (MOCVD) fabrication of a p-type group III-nitride material is described. For example, a method of fabricating a p-type group III-nitride material includes generating a nitrogen-based plasma. A nitrogen-containing species from the nitrogen-based plasma is reacted with a group III precursor and a p-type dopant precursor in a metal-organic chemical vapor deposition (MOCVD) chamber. A group III-nitride layer including p-type dopants is then formed above a substrate.
摘要翻译：描述了p型III族氮化物材料的等离子体辅助金属 - 有机化学气相沉积（MOCVD）制造。例如，制造p型III族氮化物材料的方法包括生成氮基等离子体。来自氮基等离子体的含氮物质与金属有机化学气相沉积（MOCVD）室中的III族前体和p型掺杂剂前体反应。然后在衬底上形成包括p型掺杂剂的III族氮化物层。

3. 发明申请

US20100314244A1 Ionized Physical Vapor Deposition for Microstructure Controlled Thin Film Deposition 审中-公开
公开(公告)号：US20100314244A1
公开(公告)日：2010-12-16
申请号：US12560798
申请日：2009-09-16
申请人： Karl Brown , Alan Ritchie , John A. Pipitone , Daniel J. Hoffman , Ying Rui , Donald J.K. Olgado
发明人： Karl Brown , Alan Ritchie , John A. Pipitone , Daniel J. Hoffman , Ying Rui , Donald J.K. Olgado
IPC分类号： C23C14/46
CPC分类号： C23C14/354 , C23C14/3471 , H01J37/32091 , H01J37/32165 , H01J37/3244 , H01J37/32449
摘要： Methods of processing a substrate in a PVD chamber comprising a target, a substrate and a process gas at a pressure sufficient to cause ionization of a substantial portion of species sputtered from the target are described. A capacitively coupled high density plasma is maintained by applying very high frequency power to the target. Sputtered material is ionized in the plasma and accelerated toward the substrate by a high frequency bias power applied to the substrate. The microstructure of the resultant film is controlled by modifying one or more of the pressure and the high frequency bias power.

4. 发明申请

US20080276958A1 SUBSTRATE CLEANING CHAMBER AND CLEANING AND CONDITIONING METHODS 有权
标题翻译：基板清洗室和清洁和调节方法
公开(公告)号：US20080276958A1
公开(公告)日：2008-11-13
申请号：US11745451
申请日：2007-05-08
申请人： Vineet Mehta , Karl Brown , John A. Pipitone , Daniel J. Hoffman , Steven C. Shannon , Keith A. Miller , Vijay D. Parkhe
发明人： Vineet Mehta , Karl Brown , John A. Pipitone , Daniel J. Hoffman , Steven C. Shannon , Keith A. Miller , Vijay D. Parkhe
IPC分类号： C25F3/12 , C25F7/00
CPC分类号： B08B7/0035 , C25F7/00 , H01J37/32009 , H01J37/32541 , H01L21/02046 , H01L21/0206
摘要： A substrate cleaning chamber includes a contoured ceiling electrode having an arcuate surface that faces a substrate support and has a variable cross-sectional thickness to vary the gap size between the arcuate surface and the substrate support to provide a varying plasma density across the substrate support. A dielectric ring for the cleaning chamber comprises a base, a ridge, and a radially inward ledge that covers the peripheral lip of the substrate support. A base shield comprises a circular disc having at least one perimeter wall. Cleaning and conditioning processes for the cleaning chamber are also described.
摘要翻译：衬底清洁室包括具有面向衬底支撑件的弓形表面的轮廓天花板电极，并且具有可变的横截面厚度以改变弧形表面和衬底支撑件之间的间隙尺寸，以在衬底支撑件上提供变化的等离子体密度。用于清洁室的介电环包括覆盖基板支撑件的周缘的基部，脊和径向向内的凸缘。底座包括具有至少一个周边壁的圆盘。还描述了清洁室的清洁和调节过程。

5. 发明申请

US20060172517A1 Method for plasma-enhanced physical vapor deposition of copper with RF source power applied to the target 有权
标题翻译：用于等离子体增强物理气相沉积的方法，其具有施加到目标的RF源功率
公开(公告)号：US20060172517A1
公开(公告)日：2006-08-03
申请号：US11222230
申请日：2005-09-07
申请人： Karl Brown , John Pipitone , Vineet Mehta
发明人： Karl Brown , John Pipitone , Vineet Mehta
IPC分类号： H01L21/20
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor, includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target, introducing a carrier gas into the vacuum chamber, and establishing a deposition rate on the wafer by applying D.C. power to the copper target while establishing a plasma ionization fraction by applying VHF power to the copper target. The method can further include promoting re-sputtering of copper on vertical surfaces on the wafer by coupling HF or LF power to the wafer. The method preferably includes maintaining a target magnetic field at the target and scanning the target magnetic field across the target.
摘要翻译：在等离子体反应器的真空室中的集成电路上进行铜的物理蒸镀的方法包括：在室的顶板附近设置铜靶，将集成电路晶片放置在面向靶的晶片支撑台上，引入载气进入真空室，并通过向铜靶施加直流电力，同时通过对铜靶施加甚高频电源建立等离子体电离分数，在晶片上建立沉积速率。该方法还可以包括通过将HF或LF功率耦合到晶片来促进铜在晶片上的垂直表面上的再溅射。该方法优选地包括维持目标磁场并扫描目标上的目标磁场。

6. 发明申请

US20060169584A1 Physical vapor deposition plasma reactor with RF source power applied to the target 审中-公开
标题翻译：具有RF源功率的物理气相沉积等离子体反应器施加到目标
公开(公告)号：US20060169584A1
公开(公告)日：2006-08-03
申请号：US11222245
申请日：2005-09-07
申请人： Karl Brown , John Pipitone , Vineet Mehta
发明人： Karl Brown , John Pipitone , Vineet Mehta
IPC分类号： C23C14/00
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A physical vapor deposition reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, a vacuum pump coupled to the chamber, a process gas inlet coupled to the chamber and a process gas source coupled to the process gas inlet. A metal sputter target is located at the ceiling and a high voltage D.C. source coupled to the sputter target. An RF plasma source power generator is coupled to the metal sputter target and has a frequency suitable for exciting kinetic electrons. Preferably, the wafer support pedestal comprises an electrostatic chuck and an RF plasma bias power generator is coupled to the wafer support pedestal having a frequency suitable for coupling energy to plasma ions. Preferably, a solid metal RF feed rod having a diameter in excess of about 0.5 inches engages the metal sputter target, the RF feed rod extending axially above the target through the ceiling and being coupled to the RF plasma source power generator.
摘要翻译：物理气相沉积反应器包括真空室，其包括侧壁，天花板和靠近室底部的晶片支撑台座，耦合到该室的真空泵，耦合到该室的工艺气体入口以及耦合到工艺气体入口。金属溅射靶位于天花板和耦合到溅射靶的高电压源极。 RF等离子体源功率发生器耦合到金属溅射靶并且具有适于激发动电子的频率。优选地，晶片支撑基座包括静电卡盘，并且RF等离子体偏置功率发生器耦合到具有适于将能量耦合到等离子体离子的频率的晶片支撑基座。优选地，具有超过约0.5英寸的直径的固体金属RF馈送棒与金属溅射靶接合，RF馈送杆通过天花板轴向延伸到目标上方并且耦合到RF等离子体源发电机。

7. 发明授权

US06214413B1 Method and apparatus for fabricating a wafer spacing mask on a substrate support chuck 失效
标题翻译：在基板支撑卡盘上制造晶片间隔掩模的方法和装置
公开(公告)号：US06214413B1
公开(公告)日：2001-04-10
申请号：US09231323
申请日：1999-01-13
申请人： Karl Brown
发明人： Karl Brown
IPC分类号： B05D132
CPC分类号： C23C14/50 , C23C14/042
摘要： A method and apparatus for fabricating a wafer spacing mask on a substrate support chuck. Such apparatus is a stencil containing a plurality of apertures and at least one high aspect ratio opening that is positioned atop the substrate support chuck while material is deposited onto the stencil and through the apertures and high aspect ratio openings onto the chuck. Upon completion of the deposition process, the stencil is removed from the workpiece support chuck leaving deposits of the material of various widths but the same heights to form the wafer spacing mask.
摘要翻译：一种用于在基板支撑卡盘上制造晶片间隔掩模的方法和装置。这种设备是含有多个孔和至少一个高纵横比开口的模板，该开孔定位在基板支撑卡盘顶部，同时材料沉积在模板上并通过孔和高纵横比开口到卡盘上。在沉积工艺完成后，将模板从工件支撑卡盘上移除，留下各种宽度但相同高度的材料沉积物以形成晶片间隔掩模。

8. 发明授权

US08435379B2 Substrate cleaning chamber and cleaning and conditioning methods 有权
标题翻译：基材清洗室和清洁和调理方法
公开(公告)号：US08435379B2
公开(公告)日：2013-05-07
申请号：US11745451
申请日：2007-05-08
申请人： Vineet Mehta , Karl Brown , John A. Pipitone , Daniel J. Hoffman , Steven C. Shannon , Keith A. Miller , Vijay D. Parkhe
发明人： Vineet Mehta , Karl Brown , John A. Pipitone , Daniel J. Hoffman , Steven C. Shannon , Keith A. Miller , Vijay D. Parkhe
IPC分类号： H01L21/306
CPC分类号： B08B7/0035 , C25F7/00 , H01J37/32009 , H01J37/32541 , H01L21/02046 , H01L21/0206
摘要： A substrate cleaning chamber includes a contoured ceiling electrode having an arcuate surface that faces a substrate support and has a variable cross-sectional thickness to vary the gap size between the arcuate surface and the substrate support to provide a varying plasma density across the substrate support. A dielectric ring for the cleaning chamber comprises a base, a ridge, and a radially inward ledge that covers the peripheral lip of the substrate support. A base shield comprises a circular disc having at least one perimeter wall. Cleaning and conditioning processes for the cleaning chamber are also described.
摘要翻译：衬底清洁室包括具有面向衬底支撑件的弓形表面的轮廓天花板电极，并且具有可变的横截面厚度以改变弧形表面和衬底支撑件之间的间隙尺寸，以在衬底支撑件上提供变化的等离子体密度。用于清洁室的介电环包括覆盖基板支撑件的周缘的基部，脊和径向向内的凸缘。底座包括具有至少一个周边壁的圆盘。还描述了清洁室的清洁和调节过程。

9. 发明授权

US07513971B2 Flat style coil for improved precision etch uniformity 有权
标题翻译：扁平型线圈，可提高精密蚀刻均匀性
公开(公告)号：US07513971B2
公开(公告)日：2009-04-07
申请号：US10387948
申请日：2003-03-12
申请人： Karl Brown , Vineet Mehta , See-Eng Phan
发明人： Karl Brown , Vineet Mehta , See-Eng Phan
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/321
摘要： An RF coil for a plasma etch chamber is provided in which the RF coil is substantially flat over a portion of at least one turn of the coil. In one embodiment, each turn of the coil is substantially flat over a majority of each turn. In one embodiment of the present inventions, each turn of the coil is substantially flat over approximately 300 degrees of the turn. In the final approximate 60 degrees of the turn, the coil is sloped down to the next turn. Each turn thus comprises a substantially flat portion in combination with a sloped portion interconnecting the turn to the next adjacent turn. In one embodiment, the RF coil having turns with substantially flat portions is generally cylindrical. Other shapes are contemplated such as a dome shape. In some applications such as an RF plasma etch reactor, it is believed that providing an RF coil having turns comprising flat portions with sloped portions interconnecting the flat portions can improve uniformity of the etch process.
摘要翻译：提供了一种用于等离子体蚀刻室的RF线圈，其中RF线圈在线圈的至少一圈的一部分上基本上是平坦的。在一个实施例中，线圈的每个匝在每匝的大部分上基本平坦。在本发明的一个实施例中，线圈的每一圈在转弯的大约300度处基本平坦。在最终大约60度的转弯中，线圈向下倾斜到下一回合。因此，每个转弯包括基本平坦的部分，与将转弯相互连接到下一个相邻转弯的倾斜部分组合。在一个实施例中，具有基本平坦部分的匝的RF线圈通常为圆柱形。可以想到其它形状，例如圆顶形状。在诸如RF等离子体蚀刻反应器的一些应用中，据信提供具有包括平坦部分的匝的RF线圈，其具有互连平坦部分的倾斜部分可以提高蚀刻工艺的均匀性。

10. 发明授权

US07480129B2 Detachable electrostatic chuck for supporting a substrate in a process chamber 有权
标题翻译：用于在处理室中支撑基板的可拆卸静电卡盘
公开(公告)号：US07480129B2
公开(公告)日：2009-01-20
申请号：US11221169
申请日：2005-09-07
申请人： Karl Brown , Semyon Sherstinsky , Wei W. Wang , Cheng-Hsiung Tsai , Vineet Mehta , Allen Lau , Steve Sansoni
发明人： Karl Brown , Semyon Sherstinsky , Wei W. Wang , Cheng-Hsiung Tsai , Vineet Mehta , Allen Lau , Steve Sansoni
IPC分类号： H01L21/683
CPC分类号： H01L21/6831 , Y10T279/23
摘要： A detachable electrostatic chuck can be attached to a pedestal in a process chamber. The electrostatic chuck has an electrostatic puck comprising a dielectric covering at least one electrode and a frontside surface to receive a substrate. A backside surface of the chuck has a central protrusion that can be a D-shaped mesa to facilitate alignment with a mating cavity in the pedestal. The protrusion can also have asymmetrically offset apertures, which further assist alignment, and also serve to receive electrode terminal posts and a gas tube. A heat transfer plate having an embedded heat transfer fluid channel is spring loaded on the pedestal to press against the chuck for good heat transfer.
摘要翻译：可拆卸的静电卡盘可以附接到处理室中的基座。静电吸盘具有包括覆盖至少一个电极和前侧表面的电介质的静电压盘，用于接收衬底。卡盘的背面具有可以是D形台面的中心突起，以便于与基座中的配合腔体对准。突起还可以具有不对称偏移的孔，其进一步辅助对准，并且还用于接收电极端子柱和气体管。具有嵌入式传热流体通道的传热板弹簧加载在基座上以压靠卡盘以获得良好的热传递。

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