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1. 发明授权

US5737150A Magnetic disk unit with an impact force applying mechanism 失效
标题翻译：具有冲击力施加机构的磁盘单元
公开(公告)号：US5737150A
公开(公告)日：1998-04-07
申请号：US661543
申请日：1996-06-11
申请人： Hiroaki Ohta , Yusuke Miyamoto , Koji Kodama , Atsushi Ito , Hiroshi Nishida , Tomoyuki Ohno , Kojiro Hayashi
发明人： Hiroaki Ohta , Yusuke Miyamoto , Koji Kodama , Atsushi Ito , Hiroshi Nishida , Tomoyuki Ohno , Kojiro Hayashi
IPC分类号： G11B21/21 , G11B5/54 , G11B25/04 , G11B33/12 , G11B21/22
CPC分类号： G11B5/54
摘要： A magnetic disk unit has a magnetic head-disk stickiness eliminating mechanism suitable for a small-sized, low power consumption type magnetic disk unit of a high recording density. The magnetic disk unit has a housing in which is enclosed a magnetic disk medium made of glass, a spindle and a spindle motor for driving the magnetic medium in rotation, a slider for supporting a magnetic head and an actuator for positioning the magnetic head. An impact force applying mechanism mounted adjacent the housing applies an impact force to the housing for manually imposing a predetermined certain impact force on the housing. By applying an impact force manually to the housing before use of the magnetic disk unit or when the disk unit becomes inoperative due to sticking, it is possible to easily eliminate the sticking phenomenon between the magnetic head and the magnetic disk medium, thus permitting operation of the magnetic disk unit.
摘要翻译：磁盘单元具有适用于高记录密度的小型，低功耗型磁盘单元的磁头盘粘贴消除机构。磁盘单元具有壳体，其中包围由玻璃制成的磁盘介质，主轴和用于驱动磁性介质旋转的主轴电机，用于支撑磁头的滑块和用于定位磁头的致动器。邻近壳体安装的冲击力施加机构对壳体施加冲击力，以手动地对壳体施加预定的某些冲击力。通过在使用磁盘单元之前将冲击力手动施加到壳体，或者当磁盘单元由于粘附而不起作用时，可以容易地消除磁头和磁盘介质之间的粘附现象，从而允许磁盘单元。

2. 发明授权

US09077151B2 Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/-15 degrees in the C-direction 有权
标题翻译：半平面III族氮化物光电子器件在M面平面衬底上，在C方向上具有小于+/- 15度的倾斜度
公开(公告)号：US09077151B2
公开(公告)日：2015-07-07
申请号：US13041120
申请日：2011-03-04
申请人： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , S. James Speck
发明人： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , S. James Speck
IPC分类号： H01S5/00 , H01S5/32 , B82Y20/00 , H01L21/02 , H01S5/343 , H01S5/20 , H01S5/22 , H01S5/30 , H01S5/34
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L31/03044 , H01L31/036 , H01L31/0735 , H01L33/0025 , H01L33/0045 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/2031 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/3404 , H01S2304/04
摘要： An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15
摘要翻译：在杂交GaN上生长的光电子器件，其中杂交包括GaN的半极性GaN晶体平面（从GaN的m面）和GaN的c方向偏离x度，其中-15

3. 发明授权

US08895881B2 Power window switch 有权
标题翻译：电动车窗开关
公开(公告)号：US08895881B2
公开(公告)日：2014-11-25
申请号：US13529272
申请日：2012-06-21
申请人： Takashi Nose , Manabu Sakai , Yasuhide Tanaka , Hidetoshi Yoshikawa , Akira Goto , Shiho Nakano , Takuya Nishioka , Tomohiro Takahashi , Yoshifumi Ohwa , Keiichi Shimizu , Daisuke Kitagawa , Kosuke Hirano , Masahiko Hara , Hiroaki Ohta
发明人： Takashi Nose , Manabu Sakai , Yasuhide Tanaka , Hidetoshi Yoshikawa , Akira Goto , Shiho Nakano , Takuya Nishioka , Tomohiro Takahashi , Yoshifumi Ohwa , Keiichi Shimizu , Daisuke Kitagawa , Kosuke Hirano , Masahiko Hara , Hiroaki Ohta
IPC分类号： H01H1/26 , H01H13/56
CPC分类号： H01H13/56 , H01H2235/028 , H01H2239/014 , H01H2300/01
摘要： A power window switch has a case, a substrate disposed in the case, a window operation knob disposed on the case, a window lock button disposed on a front side of the window operation knob on the case, a window operation switch mechanism disposed in the case and activated in accordance with an operation of the window operation knob, a window lock switch mechanism disposed in the case and activated in accordance with an operation of the window lock button, and a connector having a terminal with a first terminal end protruding from the case and a second terminal end connected to the substrate. The window lock switch mechanism includes two conductive plate springs, and a pressing unit for pressing the plate springs.
摘要翻译：电动窗开关具有壳体，设置在壳体中的基板，设置在壳体上的窗口操作旋钮，设置在壳体上的窗口操作旋钮的前侧上的窗口锁定按钮，设置在壳体中的窗口操作开关机构壳体并且根据窗户操作旋钮的操作被激活，窗口锁定开关机构设置在壳体中并且根据窗户锁定按钮的操作被启动，以及连接器，具有端子，第一端子端部从壳体和连接到基板的第二终端。窗锁开关机构包括两个导电板弹簧和用于按压板簧的按压单元。

4. 发明申请

US20110274999A1 FUEL CELL STACK 审中-公开
标题翻译：燃料电池堆
公开(公告)号：US20110274999A1
公开(公告)日：2011-11-10
申请号：US13144893
申请日：2010-01-14
申请人： Masahiro Mohri , Yasunori Kotani , Masaru Oda , Yasuhiro Watanabe , Akihiro Matsui , Keiko Yamazaki , Chikara Iwasawa , Hideo Okamoto , Masahiro Ise , Hiroaki Ohta
发明人： Masahiro Mohri , Yasunori Kotani , Masaru Oda , Yasuhiro Watanabe , Akihiro Matsui , Keiko Yamazaki , Chikara Iwasawa , Hideo Okamoto , Masahiro Ise , Hiroaki Ohta
IPC分类号： H01M8/24 , H01M8/04
CPC分类号： H01M8/2483 , H01M8/0206 , H01M8/0232 , H01M8/0234 , H01M8/0254 , H01M8/026 , H01M8/0263 , H01M8/0267 , H01M8/04029 , H01M8/1006 , H01M8/1007 , H01M8/1018 , H01M8/241 , H01M8/2457 , H01M2008/1095 , H01M2300/0082
摘要： A fuel cell stack is comprised of a plurality of power generating units which are stacked along the horizontal direction. A corrugated passage groove having a shape corresponding to the shape of the underside surface of a corrugated passage groove of a first fuel gas passage is formed in a surface of a first metal separator. A corrugated passage groove having a shape corresponding to the shape of the underside surface of a corrugated passage groove of a second oxidant gas passage is formed in a surface of a third metal separator. The corrugated passage grooves overlap one another to define a refrigerant passage. An oxidant gas inlet port and a fuel gas inlet port are provided in the upper portion of the power generating unit, and an oxidant gas outlet port and a fuel gas outlet port are provided in the lower portion of the power generating unit. A refrigerant inlet port and a refrigerant outlet port are formed in each of the left and right portions of the power generating unit.
摘要翻译：燃料电池堆由沿着水平方向堆叠的多个发电单元构成。在第一金属分离器的表面上形成具有与第一燃料气体通道的波纹通道槽的下表面的形状相对应的形状的波纹通道槽。在第三金属分离器的表面上形成具有与第二氧化剂气体通道的波纹通道槽的下表面的形状相对应的形状的波纹通道槽。波纹通道槽彼此重叠以限定制冷剂通道。在发电单元的上部设置有氧化剂气体导入口和燃料气体入口，在发电单元的下部设有氧化剂气体出口和燃料气体出口。制冷剂入口和制冷剂出口形成在发电单元的左右两部分中。

5. 发明授权

US07488970B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07488970B2
公开(公告)日：2009-02-10
申请号：US11447567
申请日：2006-06-05
申请人： Hiroaki Ohta , Toshio Nishida , Daisuke Nakagawa
发明人： Hiroaki Ohta , Toshio Nishida , Daisuke Nakagawa
IPC分类号： H01L29/06
CPC分类号： H01L29/155 , B82Y20/00 , H01L29/2003 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/20 , H01S5/2009 , H01S5/3215 , H01S5/3216 , H01S5/34333
摘要： The semiconductor device according to the present invention includes a semiconductor layer containing plural band gap change thin films in which a band gap is continuously monotonously changed in a laminating direction. Therefore, the present invention provides a semiconductor device having high reliability and low electric resistance.
摘要翻译：根据本发明的半导体器件包括含有带隙在层叠方向上连续单调变化的多个带隙变化薄膜的半导体层。因此，本发明提供一种具有高可靠性和低电阻的半导体器件。

6. 发明授权

US09159553B2 Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface 有权
标题翻译：部分或完全松弛的合金上的半极性或非极性氮化物器件在异质界面处具有失配位错
公开(公告)号：US09159553B2
公开(公告)日：2015-10-13
申请号：US12861532
申请日：2010-08-23
申请人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
发明人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
IPC分类号： H01S5/00 , H01L21/02 , B82Y20/00 , H01L33/00 , H01S5/32 , H01S5/343 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/20 , H01S5/22
CPC分类号： H01L21/0254 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/2009 , H01S5/2201 , H01S5/3201 , H01S5/3202 , H01S5/34333 , H01S2301/173
摘要： A dislocation-free high quality template with relaxed lattice constant, fabricated by spatially restricting misfit dislocation(s) around heterointerfaces. This can be used as a template layer for high In composition devices. Specifically, the present invention prepares high quality InGaN templates (In composition is around 5-10%), and can grow much higher In-composition InGaN quantum wells (QWs) (or multi quantum wells (MQWs)) on these templates than would otherwise be possible.
摘要翻译：具有松散晶格常数的无位错高质量模板，通过空间限制异质界面周围的错配位错制造。这可以用作高In组合设备的模板层。具体地说，本发明制备了高质量的InGaN模板（In组成为约5-10％），并且可以在这些模板上生长比其它模板高得多的In-InGaN量子阱（QW）（或多量子阱（MQW））有可能

7. 发明授权

US08761218B2 Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes 有权
标题翻译：氮化镓氮化镓屏障和用于半极性平面III氮化物半导体的发光二极管和激光二极管的分离的限制异质结构（SCH）层
公开(公告)号：US08761218B2
公开(公告)日：2014-06-24
申请号：US13080260
申请日：2011-04-05
申请人： You-Da Lin , Hiroaki Ohta , Shuji Nakamura , Steven P. DenBaars , James S. Speck
发明人： You-Da Lin , Hiroaki Ohta , Shuji Nakamura , Steven P. DenBaars , James S. Speck
IPC分类号： H01S5/34 , H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/3063 , H01S5/3202 , H01S5/3406 , H01S5/342 , H01S2304/04
摘要： A semipolar plane III-nitride semiconductor-based laser diode or light emitting diode, comprising a semipolar Indium containing multiple quantum wells for emitting light, having Aluminum containing quantum well barriers, wherein the Indium containing multiple quantum well and Aluminum containing barriers are grown in a semipolar orientation on a semipolar plane.
摘要翻译：一种半极性III族氮化物半导体激光二极管或发光二极管，其包含含有多个用于发光的量子阱的半极性铟，其具有含铝的量子阱屏障，其中含有多量子阱和含铝屏障的铟在在半极性平面上的半极性取向。

8. 发明申请

US20110170569A1 SEMIPOLAR III-NITRIDE LASER DIODES WITH ETCHED MIRRORS 审中-公开
标题翻译：具有蚀刻镜的SEMIPOLAR III-NITRIDE激光二极管
公开(公告)号：US20110170569A1
公开(公告)日：2011-07-14
申请号：US12908478
申请日：2010-10-20
申请人： Anurag Tyagi , Robert M. Farrell , Chia-Yen Huang , Po Shan Hsu , Daniel A. Haeger , Kathryn M. Kelchner , Hiroaki Ohta , Shuji Nakamura , Steven P. DenBaars , James S. Speck
发明人： Anurag Tyagi , Robert M. Farrell , Chia-Yen Huang , Po Shan Hsu , Daniel A. Haeger , Kathryn M. Kelchner , Hiroaki Ohta , Shuji Nakamura , Steven P. DenBaars , James S. Speck
IPC分类号： H01S5/323 , H01L33/02 , H01L33/60 , H01S5/00 , H01S5/183
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01S5/0014 , H01S5/06216 , H01S5/2009 , H01S5/3202 , H01S5/3211
摘要： A semipolar {20-21} III-nitride based laser diode employing a cavity with one or more etched facet mirrors. The etched facet mirrors provide an ability to arbitrarily control the orientation and dimensions of the cavity or stripe of the laser diode, thereby enabling control of electrical and optical properties of the laser diode.
摘要翻译：采用具有一个或多个蚀刻小面镜的空腔的半极性{20-21} III族氮化物基激光二极管。蚀刻刻面镜提供了任意控制激光二极管的空腔或条纹的取向和尺寸的能力，从而能够控制激光二极管的电学和光学性质。

9. 发明申请

US20110064103A1 SEMIPOLAR NITRIDE-BASED DEVICES ON PARTIALLY OR FULLY RELAXED ALLOYS WITH MISFIT DISLOCATIONS AT THE HETEROINTERFACE 有权
标题翻译：部分或完全放松的合金的二极体氮化物在异质结中具有杂质偏离
公开(公告)号：US20110064103A1
公开(公告)日：2011-03-17
申请号：US12861532
申请日：2010-08-23
申请人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
发明人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
IPC分类号： H01S5/343 , H01L33/04 , C30B23/02 , C30B25/02 , B82Y20/00
CPC分类号： H01L21/0254 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/2009 , H01S5/2201 , H01S5/3201 , H01S5/3202 , H01S5/34333 , H01S2301/173
摘要： A dislocation-free high quality template with relaxed lattice constant, fabricated by spatially restricting misfit dislocation(s) around heterointerfaces. This can be used as a template layer for high In composition devices. Specifically, the present invention prepares high quality InGaN templates (In composition is around 5-10%), and can grow much higher In-composition InGaN quantum wells (QWs) (or multi quantum wells (MQWs)) on these templates than would otherwise be possible.
摘要翻译：具有松散晶格常数的无位错高质量模板，通过空间限制异质界面周围的错配位错制造。这可以用作高In组合设备的模板层。具体地说，本发明制备了高质量的InGaN模板（In组成为约5-10％），并且可以在这些模板上生长比其它模板高得多的In-InGaN量子阱（QW）（或多量子阱（MQW））有可能

10. 发明申请

US20100189155A1 LASER LIGHT EMITTING DEVICE 有权
标题翻译：激光发光装置
公开(公告)号：US20100189155A1
公开(公告)日：2010-07-29
申请号：US12451604
申请日：2008-05-21
申请人： Taketoshi Tanaka , Kuniyoshi Okamoto , Hiroaki Ohta
发明人： Taketoshi Tanaka , Kuniyoshi Okamoto , Hiroaki Ohta
IPC分类号： H01S5/026
CPC分类号： H01S5/02212 , H01S5/3202 , H01S5/32341 , H01S5/4031 , H01S5/4087
摘要： Provided is a laser light emitting device that has light sources of multiple wavelengths including an oscillation wavelength in a green region and the like, and that can be miniaturized. A metal wiring 4 is formed on a supporting substrate 5. A green LD 1 and a red LD 2 are bonded to the metal wiring 4. Each of the green LD 1 and the red LD 2 is a laser diode element formed of a semiconductor having a layered structure. One of a positive electrode and a negative electrode of the element is bonded to the metal wiring 4, and the other electrode is connected to a lead wire 6 or a lead wire 7. The green LD 1 is formed of a GaN-based semiconductor laser diode having a nonpolar plane or a semipolar plane as a main surface for crystal growth. The red LD 2 is formed of an AlInGaP-based semiconductor laser diode.
摘要翻译：提供了具有包括绿色区域等中的振荡波长的多个波长的光源并且能够小型化的激光发光装置。金属布线4形成在支撑基板5上。绿色LD1和红色LD2接合到金属布线4.绿色LD1和红色LD2中的每一个是由半导体形成的激光二极管元件分层结构。元件的正极和负极中的一个被接合到金属布线4，另一个电极连接到引线6或引线7.绿色LD1由GaN基半导体激光器具有非极性平面或半极性平面的二极管作为晶体生长的主表面。红色LD2由AlInGaP基半导体激光二极管形成。

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