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1. 发明授权

US06869736B2 Halftone phase shift photomask and blank for halftone phase shift photomask 失效
标题翻译：半色调相移光掩模和半色调相移光掩模的空白
公开(公告)号：US06869736B2
公开(公告)日：2005-03-22
申请号：US10363604
申请日：2001-09-03
申请人： Hiro-o Nakagawa , Toshiaki Motonaga , Yoshinori Kinase , Satoshi Yusa , Shigeki Sumida , Toshifumi Yokoyama , Chiaki Hatsuta , Junji Fujikawa , Masashi Ohtsuki
发明人： Hiro-o Nakagawa , Toshiaki Motonaga , Yoshinori Kinase , Satoshi Yusa , Shigeki Sumida , Toshifumi Yokoyama , Chiaki Hatsuta , Junji Fujikawa , Masashi Ohtsuki
IPC分类号： G03F1/32 , G03F1/68 , H01L21/027 , G03C5/00
CPC分类号： G03F1/32 , G03F1/58
摘要： Disclosed is a blank for a halftone phase shift photomask comprising a transparent substrate and a halftone phase shift layer formed thereon, the halftone phase shift layer being provided with a layer containing molybdenum silicide as its major component and either one or both of oxygen and nitrogen and being formed of a multilayer film with two or more layers, wherein the multilayer film contains a layer whose major component is either one of chromium and tantalum or a chromium tantalum alloy and the layer whose major component is either one of chromium and tantalum or a chromium tantalum alloy is laminated on the side closer to the transparent substrate than the layer containing molybdenum silicide as its major component and either one or both of oxygen and nitrogen.
摘要翻译：公开了一种用于半色调相移光掩模的空白，其包括透明基板和形成在其上的半色调相移层，所述半色调相移层设置有含有硅化钼作为其主要成分的层和氧和氮中的一个或两个，由具有两层或更多层的多层膜形成，其中多层膜含有主要成分为铬和钽之一或铬钽合金的层，其主要成分为铬和钽之一或铬钽合金层叠在比含有硅化钼作为其主要成分的层和氧和氮中的任一个或两者更靠近透明基板的一侧。

2. 发明授权

US06599667B2 Halftone phase shift photomask and blank for halftone phase shift photomask 失效
公开(公告)号：US06599667B2
公开(公告)日：2003-07-29
申请号：US09843309
申请日：2001-04-26
申请人： Satoshi Yusa , Toshifumi Yokoyama , Shigeki Sumida , Toshiaki Motonaga , Yoshinori Kinase , Hiro-o Nakagawa , Chiaki Hatsuta , Junji Fujikawa , Masashi Ohtsuki
发明人： Satoshi Yusa , Toshifumi Yokoyama , Shigeki Sumida , Toshiaki Motonaga , Yoshinori Kinase , Hiro-o Nakagawa , Chiaki Hatsuta , Junji Fujikawa , Masashi Ohtsuki
IPC分类号： G03F900
CPC分类号： G03F1/32
摘要： A blank for halftone phase shift photomask is disclosed. The blank has a transparent substrate, a halftone phase shift layer and a light shielding film, the halftone phase shift layer and the light shielding film being layered in this order on the transparent substrate, and the l light shielding film is a single layered or multiple layered film which has a layer of tantalum.

3. 发明授权

US06458496B2 Blank for halftone phase shift photomask and halftone phase shift photomask 有权
标题翻译：用于半色调相移光掩模和半色调相移光掩模的空白
公开(公告)号：US06458496B2
公开(公告)日：2002-10-01
申请号：US09736805
申请日：2000-12-14
申请人： Toshiaki Motonaga , Toshifumi Yokoyama , Takafumi Okamura , Yoshinori Kinase , Hiroshi Mohri , Junji Fujikawa , Hiro-o Nakagawa , Shigeki Sumida , Satoshi Yusa , Masashi Ohtsuki
发明人： Toshiaki Motonaga , Toshifumi Yokoyama , Takafumi Okamura , Yoshinori Kinase , Hiroshi Mohri , Junji Fujikawa , Hiro-o Nakagawa , Shigeki Sumida , Satoshi Yusa , Masashi Ohtsuki
IPC分类号： G03S900
CPC分类号： G03F1/32 , B32B17/06
摘要： A blank for a halftone phase shift photomask in the present invention comprises a transparent substrate and a halftone phase shift film provided thereon, and said halftone phase shift film has a multilayer construction in which at least a first layer capable of being etched with a chlorinated gas and a second layer capable of being etched with a fluorinated gas are disposed in this order from the side near said transparent substrate. A film made of tantalum silicides is suitable to use as the second layer of the halftone phase shift film. When such a blank is first etched with a fluorinated gas and then etched with chlorinated gas, because an etching selective ratio to a transparent substrate made of synthetic quartz and the like can be taken sufficiently while maintaining the applicability to the exposure light with a short wavelength that is characteristic of silicide materials in addition to good chemical stability and good processing properties that are characteristic of tantalum materials, patterning in high precision will be made possible. As a result, it is possible to obtain an ideal halftone phase shift photomask excellent in stability after mask processing and in the applicability to the short wavelength.
摘要翻译：本发明中的半色调相移光掩模的空白包括透明基板和设置在其上的半色调相移膜，所述半色调相移膜具有多层结构，其中至少可以用氯化气体蚀刻的第一层并且能够用氟化气体蚀刻的第二层从靠近所述透明基板的一侧依次设置。由硅化钽制成的薄膜适用于半色调相移薄膜的第二层。当首先用氟化气体蚀刻这样的坯料，然后用氯化气体蚀刻时，由于可以充分利用由合成石英等制成的透明基板的蚀刻选择比，同时保持对短波长的曝光光的适用性这是硅化物材料的特征，除了钽材料的特征的良好的化学稳定性和良好的加工性能之外，将能够高精度地进行图案化。结果，可以获得在掩模处理之后和在短波长的适用性方面优异的理想半色调相移光掩模。

4. 发明授权

US06740455B2 Photomask 有权
标题翻译：光掩模
公开(公告)号：US06740455B2
公开(公告)日：2004-05-25
申请号：US10023841
申请日：2001-12-21
申请人： Kenji Noguchi , Toshiaki Motonaga , Hiro-o Nakagawa , Yasutaka Morikawa , Toshifumi Yokoyama , Takashi Tominaga , Yoshinori Kinase , Junji Fujikawa , Yoichi Takahashi
发明人： Kenji Noguchi , Toshiaki Motonaga , Hiro-o Nakagawa , Yasutaka Morikawa , Toshifumi Yokoyama , Takashi Tominaga , Yoshinori Kinase , Junji Fujikawa , Yoichi Takahashi
IPC分类号： G03F900
CPC分类号： G03F1/50
摘要： A photomask is produced which enables the simplification of the steps of lithography. A photomask is provided with shielding patterns made of shielding metallic thin film on a transparent substrate, wherein the photomask further comprises translucent patterns mainly including tantalum of materials selected from tantalum silicide, tantalum oxide, tantalum nitride or mixture thereof.
摘要翻译：制造了能够简化光刻步骤的光掩模。光掩模设置有在透明基板上由屏蔽金属薄膜制成的屏蔽图案，其中光掩模还包括主要包括选自硅化钽，氧化钽，氮化钽或其混合物的材料的钽的半透明图案。

5. 发明授权

US06764792B1 Halftone phase shift photomask and blanks for halftone phase shift photomask for producing it 失效
标题翻译：半色调相移光掩模和用于生产它的半色调相移光掩模的空白
公开(公告)号：US06764792B1
公开(公告)日：2004-07-20
申请号：US09830598
申请日：2001-04-27
申请人： Junji Fujikawa , Yoshinori Kinase , Takafumi Okamura , Hiroshi Mohri , Toshifumi Yokoyama , Haruo Kokubo
发明人： Junji Fujikawa , Yoshinori Kinase , Takafumi Okamura , Hiroshi Mohri , Toshifumi Yokoyama , Haruo Kokubo
IPC分类号： G03F900
CPC分类号： G03F1/32 , G03F1/58
摘要： The invention relates to a halftone phase shift photomask which is controlled with precision in terms of its transmittance at a wavelength applied to inspection, and measuring equipment, so that its quality can easily be assured even when its phase difference at an exposure wavelength is controlled at 180° C. with precision and its transmittance is set at 1 to 20% as desired at that wavelength. The halftone phase shift photomask (107) comprises on a transparent substrate (101) and a halftone phase shift film containing at least tantalum, oxygen, carbon and nitrogen, and has a multilayer structure comprising at least two or more different layers (102) and (103).
摘要翻译：本发明涉及一种半色调相移光掩模，其在对检查的波长的透射率和测量设备方面进行精确控制，使得即使将其在曝光波长处的相位差控制在 180℃，其透过率根据需要设定在1〜20％。半色调相移光掩模（107）包括在透明基板（101）和至少含有钽，氧，碳和氮的半色调相移膜，并且具有包括至少两个或多个不同层（102）和（103）。

6. 发明授权

US08121156B2 Solid-state laser device and image display device 有权
标题翻译：固态激光装置和图像显示装置
公开(公告)号：US08121156B2
公开(公告)日：2012-02-21
申请号：US12682378
申请日：2008-10-03
申请人： Toshifumi Yokoyama , Kiminori Mizuuchi , Tetsuro Mizushima , Tatsuo Itoh
发明人： Toshifumi Yokoyama , Kiminori Mizuuchi , Tetsuro Mizushima , Tatsuo Itoh
IPC分类号： H01S3/10
CPC分类号： H01S3/109 , G02B6/0026 , G02B6/0028 , G02B6/003 , G02B6/0066 , G02B6/0068 , G02B6/0076 , G02F1/133621 , H01S3/0619 , H01S3/08059 , H01S3/08086 , H01S3/09415 , H01S3/101 , H04N9/3158 , H04N9/3161
摘要： A semiconductor laser light source emits a laser beam for pumping. An optical resonator includes a solid laser crystal to be excited by the incident of a laser beam to oscillate a fundamental wave and a pair of fundamental wave reflective coats arranged at the opposite sides of the solid laser crystal. A wavelength conversion element converts the fundamental wave into a plurality of harmonics. The wavelength conversion element is so arranged in the optical resonator that the optical axis of at least one of the plurality of harmonics, generated in the optical resonator is made different from that of the fundamental wave and the at least one harmonic whose optical axis is made different is output substantially in the same direction as the other harmonic. By this construction, it is possible to stabilize a harmonic output and utilize a plurality of harmonics without increasing the number of parts.
摘要翻译：半导体激光光源发射用于泵浦的激光束。光学谐振器包括由激光束的入射激发以振荡基波的固体激光晶体和布置在固体激光晶体的相对侧的一对基波反射涂层。波长转换元件将基波转换成多个谐波。波长转换元件被布置在光学谐振器中，使得在光学谐振器中产生的多个谐波中的至少一个的光轴与基本波和至少一个谐波的光轴不同，该谐波的光轴被制成不同的输出基本上在与其他谐波相同的方向上。通过这种结构，可以在不增加部件数量的情况下稳定谐波输出并利用多个谐波。

7. 发明申请

US20080143976A1 Light Source Device for Display Device, Display Device, and Method for Adjusting Image of Display Device 有权
标题翻译：用于显示装置的光源装置，显示装置和用于调整显示装置的图像的方法
公开(公告)号：US20080143976A1
公开(公告)日：2008-06-19
申请号：US11885208
申请日：2006-02-28
申请人： Toshifumi Yokoyama , Ken'ichi Kasazumi
发明人： Toshifumi Yokoyama , Ken'ichi Kasazumi
IPC分类号： G03B21/14
CPC分类号： G03B21/10 , G03B21/2033 , G03B21/208 , G03B21/28 , H04N5/7408 , H04N9/3141 , H04N9/3191
摘要： A light source device for display device for projecting an image on a screen is provided, the light source device for display device including a light source unit operable to output light; an image outputting unit operable to output an image by giving an image signal to the light; and a control circuit operable to switch the image output from the image outputting unit between a normal image and a mirror reversed image formed by reversing the normal image right and left by controlling the image signal, such that outputting type is switched between a front projection in which the image is projected onto the screen from a front on the same side as the viewing side, and a rear projection in which the image is projected onto the screen from a rear plane on the opposite side to the viewing side.
摘要翻译：提供了一种用于在屏幕上投影图像的显示装置的光源装置，该显示装置的光源装置包括可操作以输出光的光源单元; 图像输出单元，用于通过向所述光提供图像信号来输出图像; 以及控制电路，其可操作以通过控制图像信号来切换从图像输出单元输出的图像在正常图像和通过反转正常图像而形成的镜像反转图像之间，使得输出类型在前投影其中图像从与观看侧相同侧的前部投影到屏幕上，以及后投影，其中图像从与观看侧相反的一侧的后平面投影到屏幕上。

8. 发明申请

US20050276288A1 Device and method for inspecting wavelength-variable semiconductor laser, and method for inspecting coherent source 失效
标题翻译：用于检测波长可变半导体激光器的装置和方法以及检查相干光源的方法
公开(公告)号：US20050276288A1
公开(公告)日：2005-12-15
申请号：US11197624
申请日：2005-08-04
申请人： Yasuo Kitaoka , Toshifumi Yokoyama , Kazuhisa Yamamoto
发明人： Yasuo Kitaoka , Toshifumi Yokoyama , Kazuhisa Yamamoto
IPC分类号： G01J1/42 , H01S3/10 , H01S5/00 , H01S5/06 , H01S5/0625
CPC分类号： G01J1/4257 , H01S5/0014 , H01S5/005 , H01S5/0092 , H01S5/06256
摘要： A method for easily and quickly evaluating the wavelength variability properties of a wavelength-variable semiconductor laser is provided. An inspection device includes a power source for supplying current to a wavelength-variable DBR semiconductor laser having an active region, a phase control region, and a DBR region, a photo-detector for detecting an output intensity of laser beam emitted from the wavelength-variable DBR semiconductor laser, and a transmission type wavelength-selection element that can be inserted into a light path from the wavelength-variable DBR semiconductor laser to the photo-detector. In a state where the transmission type wavelength-selection element is inserted into the light path from the wavelength-variable DBR semiconductor laser to the photo-detector, at least one of a phase current that is supplied to the phase control region and a DBR current that is supplied to the DBR region is changed with respect to a predetermined active current that is supplied to the active region, and the output intensity of the laser beam after the laser beam has passed through the transmission type wavelength-selection element is detected by the photo-detector.
摘要翻译：提供了一种容易且快速地评估波长可变半导体激光器的波长变异性的方法。检查装置包括用于向具有有源区域的波长可变DBR半导体激光器提供电流的电源，相位控制区域和DBR区域，用于检测从波长范围发射的激光束的输出强度的光电检测器，可变DBR半导体激光器和可以插入到从波长可变DBR半导体激光器到光检测器的光路中的透射型波长选择元件。在透射型波长选择元件从波长可变DBR半导体激光器插入到光检测器的光路中的状态下，提供给相位控制区域的相电流和DBR电流中的至少一个提供给DBR区域的电压相对于提供给有源区域的预定有功电流而改变，并且激光束已经通过透射型波长选择元件之后的激光束的输出强度由光电探测器。

9. 发明授权

US06621962B2 Optical waveguide device integrated module and method of manufacturing the same 有权
标题翻译：光波导器件集成模块及其制造方法
公开(公告)号：US06621962B2
公开(公告)日：2003-09-16
申请号：US10321050
申请日：2002-12-16
申请人： Yasuo Kitaoka , Toshifumi Yokoyama , Kazuhisa Yamamoto
发明人： Yasuo Kitaoka , Toshifumi Yokoyama , Kazuhisa Yamamoto
IPC分类号： G02B626
CPC分类号： G02B6/42 , G02B6/4219 , G02B6/4231 , G02F1/37 , H01L24/29 , H01L24/32 , H01L2224/83192 , H01S5/0092 , H01S5/02252 , H01S5/02272 , H01S5/0612 , H01S5/125
摘要： A semiconductor laser and an optical waveguide device with an optical waveguide formed at a surface of its substrate are provided on a submount. The semiconductor laser and the optical waveguide device are mounted with an active layer and a surface at which the optical waveguide is formed facing the submount, respectively. The submount is combined with the semiconductor laser or the optical waveguide device to form one body using an adhesive with a spacer, which maintains a substantially uniform distance therebetween, being interposed therebetween, so that position adjustment in the height direction can be made automatically and mounting can be carried out with high-precision optical coupling. Thus, an optical waveguide device integrated module and a method of manufacturing the same are provided, in which a semiconductor laser and a planar optical waveguide device are mounted with their positions in the height direction controlled with high precision.
摘要翻译：半导体激光器和其基板表面上形成有光波导的光波导器件设置在基座上。半导体激光器和光波导器件分别安装有有源层和形成面向子安装座的光波导的表面。底座与半导体激光器或光波导器件组合，以使用具有间隔件的粘合剂形成一体，其间保持基本上均匀的间隔，从而可以自动地进行位置调节和高度方向的安装可以用高精度光耦合进行。因此，提供了一种光波导器件集成模块及其制造方法，其中半导体激光器和平面光波导器件以其精度高度控制的位置安装。

10. 发明授权

US5972543A Phase shift mask and method of producing the same 失效
标题翻译：相移掩模及其制造方法
公开(公告)号：US5972543A
公开(公告)日：1999-10-26
申请号：US100083
申请日：1998-06-19
申请人： Toshifumi Yokoyama , Koichi Mikami , Chiaki Hatsuda , Hiroshi Mohri
发明人： Toshifumi Yokoyama , Koichi Mikami , Chiaki Hatsuda , Hiroshi Mohri
IPC分类号： H01L21/027 , G03F1/32 , G03F9/00
CPC分类号： G03F1/32
摘要： A phase shift mask, e.g. a halftone phase shift mask, which need not to form an ultra-fine pattern and is capable of suppressing during exposure the occurrence of a sub-peak of light intensity, which has an adverse effect on the image formation, and which has a light-blocking pattern with a reduced transmittance at a region outside a device pattern area which corresponds to a region subjected to multiple exposure during transfer effected by using the mask. The halftone phase shift mask has on a transparent substrate (101) a halftone phase shift film (102) comprising a single layer or a plurality of layers. The composition of the halftone phase shift film (102) is changed in a region (107) outside a device pattern area on the transparent substrate (101) which corresponds to a multiple-exposure region by a method wherein the region (107) is irradiated with an electromagnetic wave, a particle beam, heat rays, etc., or a method wherein after a region in which the composition is not desired to change has been masked, the whole blank is exposed to an active atmosphere, thereby reducing the transmittance for exposure light at the region (107).
摘要翻译：相移掩模，例如半色调相移掩模，其不需要形成超细图案，并且能够在曝光期间抑制对图像形成产生不利影响的光强度的次峰值的出现，在对应于通过使用掩模进行的转印期间经受多次曝光的区域的器件图案区域外的区域处的透射率降低的阻挡图案。半色调相移掩模在透明基板（101）上具有包括单层或多层的半色调相移膜（102）。通过照射区域（107）的方法，半透明相移膜（102）的组成在与多曝光区域对应的透明基板（101）的装置图案区域外的区域（107）中变化具有电磁波，粒子束，热射线等，或者其中在组合物不希望改变的区域已被掩蔽之后，整个坯料暴露于活性气氛，从而降低透射率在区域（107）处的曝光光。

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