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1. 发明授权

US06869736B2 Halftone phase shift photomask and blank for halftone phase shift photomask 失效
标题翻译：半色调相移光掩模和半色调相移光掩模的空白
公开(公告)号：US06869736B2
公开(公告)日：2005-03-22
申请号：US10363604
申请日：2001-09-03
申请人： Hiro-o Nakagawa , Toshiaki Motonaga , Yoshinori Kinase , Satoshi Yusa , Shigeki Sumida , Toshifumi Yokoyama , Chiaki Hatsuta , Junji Fujikawa , Masashi Ohtsuki
发明人： Hiro-o Nakagawa , Toshiaki Motonaga , Yoshinori Kinase , Satoshi Yusa , Shigeki Sumida , Toshifumi Yokoyama , Chiaki Hatsuta , Junji Fujikawa , Masashi Ohtsuki
IPC分类号： G03F1/32 , G03F1/68 , H01L21/027 , G03C5/00
CPC分类号： G03F1/32 , G03F1/58
摘要： Disclosed is a blank for a halftone phase shift photomask comprising a transparent substrate and a halftone phase shift layer formed thereon, the halftone phase shift layer being provided with a layer containing molybdenum silicide as its major component and either one or both of oxygen and nitrogen and being formed of a multilayer film with two or more layers, wherein the multilayer film contains a layer whose major component is either one of chromium and tantalum or a chromium tantalum alloy and the layer whose major component is either one of chromium and tantalum or a chromium tantalum alloy is laminated on the side closer to the transparent substrate than the layer containing molybdenum silicide as its major component and either one or both of oxygen and nitrogen.
摘要翻译：公开了一种用于半色调相移光掩模的空白，其包括透明基板和形成在其上的半色调相移层，所述半色调相移层设置有含有硅化钼作为其主要成分的层和氧和氮中的一个或两个，由具有两层或更多层的多层膜形成，其中多层膜含有主要成分为铬和钽之一或铬钽合金的层，其主要成分为铬和钽之一或铬钽合金层叠在比含有硅化钼作为其主要成分的层和氧和氮中的任一个或两者更靠近透明基板的一侧。

2. 发明授权

US06599667B2 Halftone phase shift photomask and blank for halftone phase shift photomask 失效
公开(公告)号：US06599667B2
公开(公告)日：2003-07-29
申请号：US09843309
申请日：2001-04-26
申请人： Satoshi Yusa , Toshifumi Yokoyama , Shigeki Sumida , Toshiaki Motonaga , Yoshinori Kinase , Hiro-o Nakagawa , Chiaki Hatsuta , Junji Fujikawa , Masashi Ohtsuki
发明人： Satoshi Yusa , Toshifumi Yokoyama , Shigeki Sumida , Toshiaki Motonaga , Yoshinori Kinase , Hiro-o Nakagawa , Chiaki Hatsuta , Junji Fujikawa , Masashi Ohtsuki
IPC分类号： G03F900
CPC分类号： G03F1/32
摘要： A blank for halftone phase shift photomask is disclosed. The blank has a transparent substrate, a halftone phase shift layer and a light shielding film, the halftone phase shift layer and the light shielding film being layered in this order on the transparent substrate, and the l light shielding film is a single layered or multiple layered film which has a layer of tantalum.

3. 发明授权

US06458496B2 Blank for halftone phase shift photomask and halftone phase shift photomask 有权
标题翻译：用于半色调相移光掩模和半色调相移光掩模的空白
公开(公告)号：US06458496B2
公开(公告)日：2002-10-01
申请号：US09736805
申请日：2000-12-14
申请人： Toshiaki Motonaga , Toshifumi Yokoyama , Takafumi Okamura , Yoshinori Kinase , Hiroshi Mohri , Junji Fujikawa , Hiro-o Nakagawa , Shigeki Sumida , Satoshi Yusa , Masashi Ohtsuki
发明人： Toshiaki Motonaga , Toshifumi Yokoyama , Takafumi Okamura , Yoshinori Kinase , Hiroshi Mohri , Junji Fujikawa , Hiro-o Nakagawa , Shigeki Sumida , Satoshi Yusa , Masashi Ohtsuki
IPC分类号： G03S900
CPC分类号： G03F1/32 , B32B17/06
摘要： A blank for a halftone phase shift photomask in the present invention comprises a transparent substrate and a halftone phase shift film provided thereon, and said halftone phase shift film has a multilayer construction in which at least a first layer capable of being etched with a chlorinated gas and a second layer capable of being etched with a fluorinated gas are disposed in this order from the side near said transparent substrate. A film made of tantalum silicides is suitable to use as the second layer of the halftone phase shift film. When such a blank is first etched with a fluorinated gas and then etched with chlorinated gas, because an etching selective ratio to a transparent substrate made of synthetic quartz and the like can be taken sufficiently while maintaining the applicability to the exposure light with a short wavelength that is characteristic of silicide materials in addition to good chemical stability and good processing properties that are characteristic of tantalum materials, patterning in high precision will be made possible. As a result, it is possible to obtain an ideal halftone phase shift photomask excellent in stability after mask processing and in the applicability to the short wavelength.
摘要翻译：本发明中的半色调相移光掩模的空白包括透明基板和设置在其上的半色调相移膜，所述半色调相移膜具有多层结构，其中至少可以用氯化气体蚀刻的第一层并且能够用氟化气体蚀刻的第二层从靠近所述透明基板的一侧依次设置。由硅化钽制成的薄膜适用于半色调相移薄膜的第二层。当首先用氟化气体蚀刻这样的坯料，然后用氯化气体蚀刻时，由于可以充分利用由合成石英等制成的透明基板的蚀刻选择比，同时保持对短波长的曝光光的适用性这是硅化物材料的特征，除了钽材料的特征的良好的化学稳定性和良好的加工性能之外，将能够高精度地进行图案化。结果，可以获得在掩模处理之后和在短波长的适用性方面优异的理想半色调相移光掩模。

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