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1. 发明授权

US06869736B2 Halftone phase shift photomask and blank for halftone phase shift photomask 失效
标题翻译：半色调相移光掩模和半色调相移光掩模的空白
公开(公告)号：US06869736B2
公开(公告)日：2005-03-22
申请号：US10363604
申请日：2001-09-03
申请人： Hiro-o Nakagawa , Toshiaki Motonaga , Yoshinori Kinase , Satoshi Yusa , Shigeki Sumida , Toshifumi Yokoyama , Chiaki Hatsuta , Junji Fujikawa , Masashi Ohtsuki
发明人： Hiro-o Nakagawa , Toshiaki Motonaga , Yoshinori Kinase , Satoshi Yusa , Shigeki Sumida , Toshifumi Yokoyama , Chiaki Hatsuta , Junji Fujikawa , Masashi Ohtsuki
IPC分类号： G03F1/32 , G03F1/68 , H01L21/027 , G03C5/00
CPC分类号： G03F1/32 , G03F1/58
摘要： Disclosed is a blank for a halftone phase shift photomask comprising a transparent substrate and a halftone phase shift layer formed thereon, the halftone phase shift layer being provided with a layer containing molybdenum silicide as its major component and either one or both of oxygen and nitrogen and being formed of a multilayer film with two or more layers, wherein the multilayer film contains a layer whose major component is either one of chromium and tantalum or a chromium tantalum alloy and the layer whose major component is either one of chromium and tantalum or a chromium tantalum alloy is laminated on the side closer to the transparent substrate than the layer containing molybdenum silicide as its major component and either one or both of oxygen and nitrogen.
摘要翻译：公开了一种用于半色调相移光掩模的空白，其包括透明基板和形成在其上的半色调相移层，所述半色调相移层设置有含有硅化钼作为其主要成分的层和氧和氮中的一个或两个，由具有两层或更多层的多层膜形成，其中多层膜含有主要成分为铬和钽之一或铬钽合金的层，其主要成分为铬和钽之一或铬钽合金层叠在比含有硅化钼作为其主要成分的层和氧和氮中的任一个或两者更靠近透明基板的一侧。

2. 发明授权

US06599667B2 Halftone phase shift photomask and blank for halftone phase shift photomask 失效
公开(公告)号：US06599667B2
公开(公告)日：2003-07-29
申请号：US09843309
申请日：2001-04-26
申请人： Satoshi Yusa , Toshifumi Yokoyama , Shigeki Sumida , Toshiaki Motonaga , Yoshinori Kinase , Hiro-o Nakagawa , Chiaki Hatsuta , Junji Fujikawa , Masashi Ohtsuki
发明人： Satoshi Yusa , Toshifumi Yokoyama , Shigeki Sumida , Toshiaki Motonaga , Yoshinori Kinase , Hiro-o Nakagawa , Chiaki Hatsuta , Junji Fujikawa , Masashi Ohtsuki
IPC分类号： G03F900
CPC分类号： G03F1/32
摘要： A blank for halftone phase shift photomask is disclosed. The blank has a transparent substrate, a halftone phase shift layer and a light shielding film, the halftone phase shift layer and the light shielding film being layered in this order on the transparent substrate, and the l light shielding film is a single layered or multiple layered film which has a layer of tantalum.

3. 发明授权

US06458496B2 Blank for halftone phase shift photomask and halftone phase shift photomask 有权
标题翻译：用于半色调相移光掩模和半色调相移光掩模的空白
公开(公告)号：US06458496B2
公开(公告)日：2002-10-01
申请号：US09736805
申请日：2000-12-14
申请人： Toshiaki Motonaga , Toshifumi Yokoyama , Takafumi Okamura , Yoshinori Kinase , Hiroshi Mohri , Junji Fujikawa , Hiro-o Nakagawa , Shigeki Sumida , Satoshi Yusa , Masashi Ohtsuki
发明人： Toshiaki Motonaga , Toshifumi Yokoyama , Takafumi Okamura , Yoshinori Kinase , Hiroshi Mohri , Junji Fujikawa , Hiro-o Nakagawa , Shigeki Sumida , Satoshi Yusa , Masashi Ohtsuki
IPC分类号： G03S900
CPC分类号： G03F1/32 , B32B17/06
摘要： A blank for a halftone phase shift photomask in the present invention comprises a transparent substrate and a halftone phase shift film provided thereon, and said halftone phase shift film has a multilayer construction in which at least a first layer capable of being etched with a chlorinated gas and a second layer capable of being etched with a fluorinated gas are disposed in this order from the side near said transparent substrate. A film made of tantalum silicides is suitable to use as the second layer of the halftone phase shift film. When such a blank is first etched with a fluorinated gas and then etched with chlorinated gas, because an etching selective ratio to a transparent substrate made of synthetic quartz and the like can be taken sufficiently while maintaining the applicability to the exposure light with a short wavelength that is characteristic of silicide materials in addition to good chemical stability and good processing properties that are characteristic of tantalum materials, patterning in high precision will be made possible. As a result, it is possible to obtain an ideal halftone phase shift photomask excellent in stability after mask processing and in the applicability to the short wavelength.
摘要翻译：本发明中的半色调相移光掩模的空白包括透明基板和设置在其上的半色调相移膜，所述半色调相移膜具有多层结构，其中至少可以用氯化气体蚀刻的第一层并且能够用氟化气体蚀刻的第二层从靠近所述透明基板的一侧依次设置。由硅化钽制成的薄膜适用于半色调相移薄膜的第二层。当首先用氟化气体蚀刻这样的坯料，然后用氯化气体蚀刻时，由于可以充分利用由合成石英等制成的透明基板的蚀刻选择比，同时保持对短波长的曝光光的适用性这是硅化物材料的特征，除了钽材料的特征的良好的化学稳定性和良好的加工性能之外，将能够高精度地进行图案化。结果，可以获得在掩模处理之后和在短波长的适用性方面优异的理想半色调相移光掩模。

4. 发明授权

US06740455B2 Photomask 有权
标题翻译：光掩模
公开(公告)号：US06740455B2
公开(公告)日：2004-05-25
申请号：US10023841
申请日：2001-12-21
申请人： Kenji Noguchi , Toshiaki Motonaga , Hiro-o Nakagawa , Yasutaka Morikawa , Toshifumi Yokoyama , Takashi Tominaga , Yoshinori Kinase , Junji Fujikawa , Yoichi Takahashi
发明人： Kenji Noguchi , Toshiaki Motonaga , Hiro-o Nakagawa , Yasutaka Morikawa , Toshifumi Yokoyama , Takashi Tominaga , Yoshinori Kinase , Junji Fujikawa , Yoichi Takahashi
IPC分类号： G03F900
CPC分类号： G03F1/50
摘要： A photomask is produced which enables the simplification of the steps of lithography. A photomask is provided with shielding patterns made of shielding metallic thin film on a transparent substrate, wherein the photomask further comprises translucent patterns mainly including tantalum of materials selected from tantalum silicide, tantalum oxide, tantalum nitride or mixture thereof.
摘要翻译：制造了能够简化光刻步骤的光掩模。光掩模设置有在透明基板上由屏蔽金属薄膜制成的屏蔽图案，其中光掩模还包括主要包括选自硅化钽，氧化钽，氮化钽或其混合物的材料的钽的半透明图案。

5. 发明授权

US06780547B2 Halftone phase shifting photomask and blanks for halftone phase shifting photomask therefor and a method for forming pattern by using the halftone phase shifting photomask 失效
标题翻译：半色调相移光掩模和半色调相移光掩模的坯料以及通过使用半色调相移光掩模形成图案的方法
公开(公告)号：US06780547B2
公开(公告)日：2004-08-24
申请号：US09825578
申请日：2001-04-03
申请人： Toshiaki Motonaga , Norihito Ito , Chiaki Hatsuta , Junji Fujikawa , Naoya Hayashi , Toshio Onodera , Takahiro Matsuo , Toru Ogawa , Keisuke Nakazawa
发明人： Toshiaki Motonaga , Norihito Ito , Chiaki Hatsuta , Junji Fujikawa , Naoya Hayashi , Toshio Onodera , Takahiro Matsuo , Toru Ogawa , Keisuke Nakazawa
IPC分类号： G03F900
CPC分类号： G03F1/32
摘要： In a halftone phase shifting photomask 108, having a pattern of halftone phase shifting film 102 containing at least chromium and fluorine, the halftone phase shifting film is heat-treated at a temperature between 250° C. and 500° C. so that a change of the optical property of the film produced by the application of excimer laser for exposure to the film is decreased.
摘要翻译：在具有至少包含铬和氟的半色调相移膜102的图案的半色调相移光掩模108中，半色调相移膜在250℃和500℃之间的温度下进行热处理，从而改变通过施加用于暴露于膜的准分子激光器制造的膜的光学性能降低。

6. 发明授权

US06764792B1 Halftone phase shift photomask and blanks for halftone phase shift photomask for producing it 失效
标题翻译：半色调相移光掩模和用于生产它的半色调相移光掩模的空白
公开(公告)号：US06764792B1
公开(公告)日：2004-07-20
申请号：US09830598
申请日：2001-04-27
申请人： Junji Fujikawa , Yoshinori Kinase , Takafumi Okamura , Hiroshi Mohri , Toshifumi Yokoyama , Haruo Kokubo
发明人： Junji Fujikawa , Yoshinori Kinase , Takafumi Okamura , Hiroshi Mohri , Toshifumi Yokoyama , Haruo Kokubo
IPC分类号： G03F900
CPC分类号： G03F1/32 , G03F1/58
摘要： The invention relates to a halftone phase shift photomask which is controlled with precision in terms of its transmittance at a wavelength applied to inspection, and measuring equipment, so that its quality can easily be assured even when its phase difference at an exposure wavelength is controlled at 180° C. with precision and its transmittance is set at 1 to 20% as desired at that wavelength. The halftone phase shift photomask (107) comprises on a transparent substrate (101) and a halftone phase shift film containing at least tantalum, oxygen, carbon and nitrogen, and has a multilayer structure comprising at least two or more different layers (102) and (103).
摘要翻译：本发明涉及一种半色调相移光掩模，其在对检查的波长的透射率和测量设备方面进行精确控制，使得即使将其在曝光波长处的相位差控制在 180℃，其透过率根据需要设定在1〜20％。半色调相移光掩模（107）包括在透明基板（101）和至少含有钽，氧，碳和氮的半色调相移膜，并且具有包括至少两个或多个不同层（102）和（103）。

7. 发明申请

US20090220867A1 GRADATED PHOTOMASK AND ITS FABRICATION PROCESS 有权
标题翻译：分级光电及其制造工艺
公开(公告)号：US20090220867A1
公开(公告)日：2009-09-03
申请号：US12066203
申请日：2006-09-19
申请人： Junji Fujikawa , Shu Shimada , Yuuichi Yoshida , Shiho Sasaki , Tsuyoshi Amano , Kimio Ito , Nobuhito Toyama , Hiroshi Mohri
发明人： Junji Fujikawa , Shu Shimada , Yuuichi Yoshida , Shiho Sasaki , Tsuyoshi Amano , Kimio Ito , Nobuhito Toyama , Hiroshi Mohri
IPC分类号： G03F1/00
CPC分类号： G03F1/46 , G03F1/50
摘要： The invention provides a gradated photomask for reducing photolithography steps and its fabrication process, which make use of a generally available photomask blank, prevents the reflectance of a light shield film from growing high, makes alignment easy during the formation of a semitransparent film, and enables the semitransparent film on a light shield pattern with good step coverage. A photomask (100) comprises a mixture of a light shield area including a light shield film (114) having a desired pattern on a transparent substrate wherein a film forming the pattern is substantially opaque to photolithographic light, a semitransparent film (113) that transmits the photolithographic light at a desired transmittance, and the light shield film (114) and the semitransparent film (113) are stacked on the transparent substrate (101) in that order; a semi-transparent area wherein there is only the semitransparent film (113); and a transmissive area there is neither the light shield film (114) nor the semitransparent film (113), and is characterized in that the semitransparent film (113) has an antireflection function with respect to the photolithographic light.
摘要翻译：本发明提供了一种用于减少光刻步骤的渐变光掩模及其制造工艺，其使用通常可获得的光掩模坯料防止遮光膜的反射率增长，使得在形成半透明膜期间容易对准，并且使得能够半透明薄膜在遮光罩上具有良好的台阶覆盖率。光掩模（100）包括在透明基板上包括具有期望图案的遮光膜（114）的遮光区域的混合物，其中形成图案的膜对光刻光基本上不透明;透射膜（113），透射膜所述透光性的光刻光以及遮光膜（114）和半透明膜（113）依次层叠在透明基板（101）上; 半透明区域，其中仅有半透明膜（113）; 透光区域既不存在遮光膜（114）也不存在半透明膜（113），其特征在于，半透明膜（113）相对于光刻光具有防反射功能。

8. 发明授权

US5721075A Blanks for halftone phase shift photomasks, halftone phase shift photomasks, and methods for fabricating them 失效
标题翻译：半色调相移光掩模的空白，半色调相移光掩模及其制造方法
公开(公告)号：US5721075A
公开(公告)日：1998-02-24
申请号：US783829
申请日：1997-01-13
申请人： Keiji Hashimoto , Junji Fujikawa , Hiroshi Mohri , Masahiro Takahashi , Hiroyuki Miyashita , Yukio Iimura
发明人： Keiji Hashimoto , Junji Fujikawa , Hiroshi Mohri , Masahiro Takahashi , Hiroyuki Miyashita , Yukio Iimura
IPC分类号： G03F1/32 , G03F1/68 , H01L21/027 , G03F9/00
CPC分类号： G03F1/32
摘要： The invention relates a halftone phase shift photomask and a blank therefor, which enables the transmittance of a phase shift portion to be varied even after blank or photomask fabrication, can accommodate to a variety of patterns, and can be fabricated on a mass scale. The exposure light transmittance of a halftone phase shift layer is arbitrarily variable within the range of 1% to 50%, inclusive, by exposing the blank or photomask to a high temperature elevated to at least 150.degree. C., to an oxidizing atmosphere, or to a reducing atmosphere at a step that can provided independent of the steps for film-forming or photomask fabrication step. This enables the exposure light transmittance of the halftone phase shift layer to be changed to any desired value after blank or photomask fabrication, and so an optimal halftone phase shift photomask to be obtained depending on the size, area, location, shape, and the like of the transferred pattern.
摘要翻译：本发明涉及一种半色调相移光掩模及其空白处理，即使在空白或光掩模制造之后，相移部分的透射率也能够变化，可以适应各种图案，并且可以大规模制造。半色调相变层的曝光透光率可以在1％至50％的范围内任意变化，包括在内，将空白或光掩模暴露于升高至少150℃的高温至氧化气氛，或在可以独立于成膜或光掩模制造步骤的步骤的步骤中进行还原气氛。这使得半色调相移层的曝光光透射率在空白或光掩模制造之后变为任何期望值，因此根据尺寸，面积，位置，形状等获得最佳半色调相移光掩模的转移模式。

9. 发明授权

US5538816A Halftone phase shift photomask, halftone phase shift photomask blank, and methods of producing the same 失效
标题翻译：半色调相移光掩模，半色调相移光掩模坯料及其制造方法
公开(公告)号：US5538816A
公开(公告)日：1996-07-23
申请号：US225905
申请日：1994-04-11
申请人： Keiji Hashimoto , Junji Fujikawa , Hiroshi Mohri , Masahiro Takahashi , Hiroyuki Miyashita , Yukio Iimura
发明人： Keiji Hashimoto , Junji Fujikawa , Hiroshi Mohri , Masahiro Takahashi , Hiroyuki Miyashita , Yukio Iimura
IPC分类号： G03F1/00 , G03F9/00
CPC分类号： G03F1/32 , Y10T428/24868
摘要： A halftone phase shift photomask designed so that it is possible to shorten the photoengraving process, use a production line for a conventional photomask, prevent lowering of the contract between the transparent and semitransparent regions at a long wavelength in the visible region, which is used for inspection and measurement, and also prevent charge-up during electron beam exposure, and that ordinary physical cleaning process can be used for the halftone phase shift photomask. The halftone phase shift photomask has on a transparent substrate (1) a region which is semitransparent to exposure light and a region which is transparent to the exposure light so that the phase difference between light passing through the transparent region and light passing through the semitransparent region is substantially .pi. radians. A semitransparent film that constitutes the semitransparent region is arranged in the form of a multilayer film including layers (3, 4) of chromium or a chromium compound. For example, the layer (3) is formed of chromium oxide, chromium oxide nitride, chromium oxide carbide, or chromium oxide nitride carbide, and the layer (4) is formed of chromium or chromium nitride. The layer (3) mainly serves as a phase shift layer, while the layer (4) mainly serves as a transmittance control layer that suppresses the rise of transmittance at the long wavelength side. The semitransparent film is formed by physical vapor deposition.
摘要翻译：设计成可以缩短光刻工艺的半色调相移光掩模，使用用于常规光掩模的生产线，防止在可见光区域的长波长处的透明区域和半透明区域之间的收缩降低，其用于检查和测量，并且还防止电子束暴露期间的充电，并且普通的物理清洁过程可用于半色调相移光掩模。半色调相移光掩模在透明基板（1）上具有与曝光光半透明的区域和对曝光光透明的区域，使得通过透明区域的光与通过半透明区域的光之间的相位差基本上是pi弧度。构成半透明区域的半透明膜以包含铬或铬化合物的层（3,4）的多层膜的形式排列。例如，层（3）由氧化铬，氧化铬氮化物，氧化铬碳化物或氧化铬氮化物构成，层（4）由铬或氮化铬形成。层（3）主要用作相移层，而层（4）主要用作抑制长波长侧的透射率上升的透射率控制层。半透明膜通过物理气相沉积形成。

10. 发明授权

US08124301B2 Gradated photomask and its fabrication process 有权
标题翻译：分级光掩模及其制造工艺
公开(公告)号：US08124301B2
公开(公告)日：2012-02-28
申请号：US12066203
申请日：2006-09-19
申请人： Junji Fujikawa , Shu Shimada , Yuuichi Yoshida , Shiho Sasaki , Tsuyoshi Amano , Kimio Ito , Nobuhito Toyama , Hiroshi Mohri
发明人： Junji Fujikawa , Shu Shimada , Yuuichi Yoshida , Shiho Sasaki , Tsuyoshi Amano , Kimio Ito , Nobuhito Toyama , Hiroshi Mohri
IPC分类号： G03F1/00 , G03F9/00
CPC分类号： G03F1/46 , G03F1/50
摘要： The invention provides a gradated photomask for reducing photolithography steps and its fabrication process, which make use of a generally available photomask blank, prevents the reflectance of a light shield film from growing high, makes alignment easy during the formation of a semitransparent film, and enables the semi-transparent film on a light shield pattern with good step coverage. A photomask (100) comprises a mixture of a light shield area including a light shield film (114) having a desired pattern on a transparent substrate wherein a film forming the pattern is substantially opaque to photolithographic light, a semitransparent film (113) that transmits the photolithographic light at a desired transmittance, and the light shield film (114) and the semitransparent film (113) are stacked on the transparent substrate (101) in that order; a semi-transparent area wherein there is only the semitransparent film (113); and a transmissive area there is neither the light shield film (114) nor the semitransparent film (113), and is characterized in that the semitransparent film (113) has an antireflection function with respect to the photolithographic light.
摘要翻译：本发明提供了一种用于减少光刻步骤的渐变光掩模及其制造工艺，其使用通常可获得的光掩模坯料防止遮光膜的反射率增长，使得在形成半透明膜期间容易对准，并且使得能够半透明薄膜在遮光罩上具有良好的台阶覆盖率。光掩模（100）包括在透明基板上包括具有期望图案的遮光膜（114）的遮光区域的混合物，其中形成图案的膜对光刻光基本上不透明;透射膜（113），透射膜所述透光性的光刻光以及遮光膜（114）和半透明膜（113）依次层叠在透明基板（101）上; 半透明区域，其中仅有半透明膜（113）; 透光区域既不存在遮光膜（114）也不存在半透明膜（113），其特征在于，半透明膜（113）相对于光刻光具有防反射功能。

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