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1. 发明申请

US20090220867A1 GRADATED PHOTOMASK AND ITS FABRICATION PROCESS 有权
标题翻译：分级光电及其制造工艺
公开(公告)号：US20090220867A1
公开(公告)日：2009-09-03
申请号：US12066203
申请日：2006-09-19
申请人： Junji Fujikawa , Shu Shimada , Yuuichi Yoshida , Shiho Sasaki , Tsuyoshi Amano , Kimio Ito , Nobuhito Toyama , Hiroshi Mohri
发明人： Junji Fujikawa , Shu Shimada , Yuuichi Yoshida , Shiho Sasaki , Tsuyoshi Amano , Kimio Ito , Nobuhito Toyama , Hiroshi Mohri
IPC分类号： G03F1/00
CPC分类号： G03F1/46 , G03F1/50
摘要： The invention provides a gradated photomask for reducing photolithography steps and its fabrication process, which make use of a generally available photomask blank, prevents the reflectance of a light shield film from growing high, makes alignment easy during the formation of a semitransparent film, and enables the semitransparent film on a light shield pattern with good step coverage. A photomask (100) comprises a mixture of a light shield area including a light shield film (114) having a desired pattern on a transparent substrate wherein a film forming the pattern is substantially opaque to photolithographic light, a semitransparent film (113) that transmits the photolithographic light at a desired transmittance, and the light shield film (114) and the semitransparent film (113) are stacked on the transparent substrate (101) in that order; a semi-transparent area wherein there is only the semitransparent film (113); and a transmissive area there is neither the light shield film (114) nor the semitransparent film (113), and is characterized in that the semitransparent film (113) has an antireflection function with respect to the photolithographic light.
摘要翻译：本发明提供了一种用于减少光刻步骤的渐变光掩模及其制造工艺，其使用通常可获得的光掩模坯料防止遮光膜的反射率增长，使得在形成半透明膜期间容易对准，并且使得能够半透明薄膜在遮光罩上具有良好的台阶覆盖率。光掩模（100）包括在透明基板上包括具有期望图案的遮光膜（114）的遮光区域的混合物，其中形成图案的膜对光刻光基本上不透明;透射膜（113），透射膜所述透光性的光刻光以及遮光膜（114）和半透明膜（113）依次层叠在透明基板（101）上; 半透明区域，其中仅有半透明膜（113）; 透光区域既不存在遮光膜（114）也不存在半透明膜（113），其特征在于，半透明膜（113）相对于光刻光具有防反射功能。

2. 发明授权

US08124301B2 Gradated photomask and its fabrication process 有权
标题翻译：分级光掩模及其制造工艺
公开(公告)号：US08124301B2
公开(公告)日：2012-02-28
申请号：US12066203
申请日：2006-09-19
申请人： Junji Fujikawa , Shu Shimada , Yuuichi Yoshida , Shiho Sasaki , Tsuyoshi Amano , Kimio Ito , Nobuhito Toyama , Hiroshi Mohri
发明人： Junji Fujikawa , Shu Shimada , Yuuichi Yoshida , Shiho Sasaki , Tsuyoshi Amano , Kimio Ito , Nobuhito Toyama , Hiroshi Mohri
IPC分类号： G03F1/00 , G03F9/00
CPC分类号： G03F1/46 , G03F1/50
摘要： The invention provides a gradated photomask for reducing photolithography steps and its fabrication process, which make use of a generally available photomask blank, prevents the reflectance of a light shield film from growing high, makes alignment easy during the formation of a semitransparent film, and enables the semi-transparent film on a light shield pattern with good step coverage. A photomask (100) comprises a mixture of a light shield area including a light shield film (114) having a desired pattern on a transparent substrate wherein a film forming the pattern is substantially opaque to photolithographic light, a semitransparent film (113) that transmits the photolithographic light at a desired transmittance, and the light shield film (114) and the semitransparent film (113) are stacked on the transparent substrate (101) in that order; a semi-transparent area wherein there is only the semitransparent film (113); and a transmissive area there is neither the light shield film (114) nor the semitransparent film (113), and is characterized in that the semitransparent film (113) has an antireflection function with respect to the photolithographic light.
摘要翻译：本发明提供了一种用于减少光刻步骤的渐变光掩模及其制造工艺，其使用通常可获得的光掩模坯料防止遮光膜的反射率增长，使得在形成半透明膜期间容易对准，并且使得能够半透明薄膜在遮光罩上具有良好的台阶覆盖率。光掩模（100）包括在透明基板上包括具有期望图案的遮光膜（114）的遮光区域的混合物，其中形成图案的膜对光刻光基本上不透明;透射膜（113），透射膜所述透光性的光刻光以及遮光膜（114）和半透明膜（113）依次层叠在透明基板（101）上; 半透明区域，其中仅有半透明膜（113）; 透光区域既不存在遮光膜（114）也不存在半透明膜（113），其特征在于，半透明膜（113）相对于光刻光具有防反射功能。

3. 发明授权

US08158311B2 Method for managing light exposure mask and light exposure mask 有权
标题翻译：用于管理曝光掩模和曝光掩模的方法
公开(公告)号：US08158311B2
公开(公告)日：2012-04-17
申请号：US11838974
申请日：2007-08-15
申请人： Shu Shimada , Hideki Yamamoto , Akihiko Naitoh
发明人： Shu Shimada , Hideki Yamamoto , Akihiko Naitoh
IPC分类号： G03C5/00 , G03F1/00 , C23G1/02
CPC分类号： G03F1/82 , G03F7/70916
摘要： An object of the present invention is to provide a method for managing a light exposure mask wherein: a mask inspection or a wafer inspection, in order to manage a contamination of a light exposure mask by a growing foreign matter, is not necessary; the method has general versatility regardless to the history of the mask; the method dose not increase time and cost for mask manufacturing and inspection; and the method is operated so that the mask can always be used in a clean state. Another object of the present invention is to provide a light exposure mask wherein a contamination by a growing foreign matter dose not occur. A method for managing a light exposure mask is characterized in that: calculating a sulfate ion adsorption amount on a surface of the light exposure mask, of after a elapse of a predetermined time, from a sulfate ion concentration actually measured in an environment of using the light exposure mask, a maximum amount of sulfate ions adsorbed on the surface of the light exposure mask, and a threshold value of an amount of sulfate ions present on the surface of the light exposure mask of which the foreign matter occurs on the surface of the light exposure mask; setting an usable period of the light exposure mask, which the foreign matter dose not occur; and using the light exposure mask while rewashing the light exposure mask before the usable period expires.
摘要翻译：本发明的一个目的是提供一种用于管理曝光掩模的方法，其中：为了控制日益增长的异物污染光照掩模，掩模检查或晶片检查是不必要的; 该方法具有通用性，无论面具的历史如何; 该方法不会增加掩模制造和检验的时间和成本; 并且该方法被操作，使得掩模可以总是在清洁状态下使用。本发明的另一个目的是提供一种曝光掩模，其中不会发生生长的异物的污染。用于管理曝光掩模的方法的特征在于：在经过预定时间之后，在使用该曝光掩模的环境中实际测量的硫酸根离子浓度计算曝光掩模的表面上的硫酸根离子吸附量曝光掩模，吸附在曝光掩模的表面上的最大量的硫酸根离子，以及在该曝光掩模的表面上存在异物的表面上存在的硫酸根离子的量的阈值曝光掩模; 设定异物不发生的曝光掩模的使用期间; 并且在可用时间期满之前再次洗涤曝光掩模时使用曝光掩模。

4. 发明申请

US20080102381A1 METHOD FOR MANAGING LIGHT EXPOSURE MASK AND LIGHT EXPOSURE MASK 有权
标题翻译：用于管理光照曝光掩模和光曝光掩模的方法
公开(公告)号：US20080102381A1
公开(公告)日：2008-05-01
申请号：US11838974
申请日：2007-08-15
申请人： Shu Shimada , Hideki Yamamoto , Akihiko Naitoh
发明人： Shu Shimada , Hideki Yamamoto , Akihiko Naitoh
IPC分类号： G03F1/00
CPC分类号： G03F1/82 , G03F7/70916
摘要： An object of the present invention is to provide a method for managing a light exposure mask wherein: a mask inspection or a wafer inspection, in order to manage a contamination of a light exposure mask by a growing foreign matter, is not necessary; the method has general versatility regardless to the history of the mask; the method dose not increase time and cost for mask manufacturing and inspection; and the method is operated so that the mask can always be used in a clean state. Another object of the present invention is to provide a light exposure mask wherein a contamination by a growing foreign matter dose not occur. A method for managing a light exposure mask is characterized in that: calculating a sulfate ion adsorption amount on a surface of the light exposure mask, of after a elapse of a predetermined time, from a sulfate ion concentration actually measured in an environment of using the light exposure mask, a maximum amount of sulfate ions adsorbed on the surface of the light exposure mask, and a threshold value of an amount of sulfate ions present on the surface of the light exposure mask of which the foreign matter occurs on the surface of the light exposure mask; setting an usable period of the light exposure mask, which the foreign matter dose not occur; and using the light exposure mask while rewashing the light exposure mask before the usable period expires.
摘要翻译：本发明的一个目的是提供一种用于管理曝光掩模的方法，其中：为了控制日益增长的异物污染光照掩模，掩模检查或晶片检查是不必要的; 该方法具有通用性，无论面具的历史如何; 该方法不会增加掩模制造和检验的时间和成本; 并且该方法被操作，使得掩模可以总是在清洁状态下使用。本发明的另一个目的是提供一种曝光掩模，其中不会发生生长的异物的污染。用于管理曝光掩模的方法的特征在于：在经过预定时间之后，在使用该曝光掩模的环境中实际测量的硫酸根离子浓度计算曝光掩模的表面上的硫酸根离子吸附量曝光掩模，吸附在曝光掩模的表面上的最大量的硫酸根离子，以及在该曝光掩模的表面上存在异物的表面上存在的硫酸根离子的量的阈值曝光掩模; 设定异物不发生的曝光掩模的使用期间; 并且在可用时间期满之前再次洗涤曝光掩模时使用曝光掩模。

5. 发明授权

US07967917B2 Method of cleaning storage case 有权
标题翻译：储存盒清洗方法
公开(公告)号：US07967917B2
公开(公告)日：2011-06-28
申请号：US11839626
申请日：2007-08-16
申请人： Shu Shimada , Noriyuki Takahashi , Hiroyuki Nakajima , Hiroko Tanaka , Nobuyuki Kanda
发明人： Shu Shimada , Noriyuki Takahashi , Hiroyuki Nakajima , Hiroko Tanaka , Nobuyuki Kanda
IPC分类号： B08B5/02 , B08B9/093
CPC分类号： B08B7/0071 , G03F1/66 , G03F1/82
摘要： The present invention provides a method of cleaning a storage case to be used for storing or transporting mask substrates such as photomasks and photomask blanks, semiconductor substrates such as semiconductor wafers, pellicles, or the like. The present invention: facilitates a regular cleaning operation, can be used also for a storage case of a complicated shape, does not require a large scale equipment or an expensive equipment to facilitate an environmental countermeasure, and provides high cleaning effect. The method of cleaning a storage case polluted by adhesion of a foreign substance of an organic material, an ionic foreign substances or an ionic crystal foreign substance physically absorbed, comprises a step of placing the storage case still in air flow of cleaned air or an inert gas in a temperature range from room temperature to 80° C. for desorbing and removing the foreign substance adhered to the storage case.
摘要翻译：本发明提供了一种清洁用于存放或传送诸如光掩模和光掩模坯料的掩模基板，诸如半导体晶片，薄膜等半导体基板的存储盒的方法。本发明：便于定期的清洁操作，也可以用于复杂形状的储存盒，不需要大型设备或昂贵的设备来促进环境对策，并且提供高清洁效果。清洁被有机材料的异物，物理吸收的离子性异物或离子性异物的附着物污染的储存箱的方法包括将储存箱放置在清洁空气的空气流中或惰性气体的步骤气体在室温至80℃的温度范围内，用于解吸和除去粘附到储存盒的异物。

6. 发明授权

US07718008B2 Method for cleaning photo mask 有权
标题翻译：清洁光罩的方法
公开(公告)号：US07718008B2
公开(公告)日：2010-05-18
申请号：US11839655
申请日：2007-08-16
申请人： Shu Shimada , Noriyuki Takahashi , Hiroko Tanaka , Hiroyuki Ishii , Yusuke Shoji , Masashi Ohtsuki
发明人： Shu Shimada , Noriyuki Takahashi , Hiroko Tanaka , Hiroyuki Ishii , Yusuke Shoji , Masashi Ohtsuki
IPC分类号： B08B7/00 , G01N21/00
CPC分类号： G03F7/70925 , G03F1/64 , G03F1/82
摘要： The present invention provides a method for cleaning a photo mask without the need for removal of the pellicle mounted on the photo mask, without the large scale equipment for washing with a solution, with a small number of steps for cleaning and inspection, and without the increase of the production cost. The method for cleaning a photo mask with a pellicle mounted, in which the pellicle frame has a gas introducing hole and a gas discharging hole, comprises: a step of introducing a gaseous substituting substance from the gas introducing hole in a pellicle inner space surrounded by the photo mask and the pellicle, substituting foreign substances on the photo mask, and discharging the foreign substances from the gas discharging hole; and a step of irradiating an ultraviolet ray to the photo mask, while an air or a nitrogen gas or a rare gas is introduced from the gas introducing hole, for degrading the substituted substituting substance so as to be gaseous, and discharging the same from the gas discharging hole.
摘要翻译：本发明提供了一种清洁光掩模的方法，而不需要除去安装在光掩模上的防护薄膜组件，而不需要用溶液洗涤的大规模设备，具有少量用于清洁和检查的步骤，并且没有增加生产成本。用防护薄膜组件清洁光罩的方法，其中防护薄膜组件框架具有气体导入孔和气体排出孔，包括：将气体取代物质从气体导入孔引入防护薄膜组件内部空间的步骤，光掩模和防护薄膜组件，在光掩模上代替异物，并从排气孔排出异物; 以及从气体导入孔导入空气或氮气或稀有气体而将紫外线照射到光掩模的步骤，使取代的取代物质降解成气态，并将其从气体排放孔。

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