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    • 7. 发明申请
    • Column redundancy for digital multilevel nonvolatile memory
    • 数字多级非易失性存储器的列冗余
    • US20050024956A1
    • 2005-02-03
    • US10628979
    • 2003-07-28
    • Hieu TranSakhawat KhanWilliam SaikiGeorge Korsh
    • Hieu TranSakhawat KhanWilliam SaikiGeorge Korsh
    • G11C7/00G11C11/56G11C29/00G11C29/50
    • G11C29/50G11C11/5621G11C16/04G11C29/027G11C29/50004G11C29/82G11C2029/0409
    • A digital multilevel bit memory array system comprises regular memory arrays and redundant memory arrays. A regular y-driver corresponds to each memory array to read or write contents to a multilevel bit memory cell and compare the read cell content to reference voltage levels to determine the data stored in the corresponding memory cell. Likewise, similar functions are performed by the redundant y-driver circuit for the redundant memory array. During the verification of the contents of the memory cell, if the read voltage is outside a certain margin requirement for a level of the reference voltage, a signal is generated in real time so that data from the bad y-driver is not output and data from the redundant y-driver corresponding to the redundant memory array is read out. The memory array system may also include a fractional multilevel redundancy.
    • 数字多电平位存储器阵列系统包括常规存储器阵列和冗余存储器阵列。 常规y驱动器对应于每个存储器阵列以将内容读取或写入多级位存储器单元,并将读取的单元内容与参考电压电平进行比较,以确定存储在相应存储器单元中的数据。 类似的功能由冗余的y驱动电路执行,用于冗余存储器阵列。 在验证存储单元的内容期间,如果读取电压超出参考电压电平的一定余量要求,则实时生成信号,以便不输出来自不良y驱动器的数据和数据 从对应于冗余存储器阵列的冗余y驱动器读出。 存储器阵列系统还可以包括分数多级冗余。