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1. 发明申请

US20100244087A1 NITRIDE SEMICONDUCTOR, NITRIDE SEMICONDUCTOR CRYSTAL GROWTH METHOD, AND NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
标题翻译：氮化物半导体，氮化物半导体晶体生长方法和氮化物半导体发光元件
公开(公告)号：US20100244087A1
公开(公告)日：2010-09-30
申请号：US12744163
申请日：2008-11-20
申请人： Hideyoshi Horie , Kaori Kurihara
发明人： Hideyoshi Horie , Kaori Kurihara
IPC分类号： H01L33/30 , H01L29/20 , C30B23/02
CPC分类号： H01L33/0075 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/007 , H01L33/16
摘要： During the growth of a nitride semiconductor crystal on a nonpolar face nitride substrate, such as an m-face, the gas that constitutes the main flow in the process of heating up to a relatively high temperature range, before growth of the nitride semiconductor layer, (the atmosphere to which the main nitride face of the substrate is exposed) and the gas that constitutes the main flow until growth of first and second nitride semiconductor layers is completed (the atmosphere to which the main nitride face of the substrate is exposed) are primarily those that will not have an etching effect on the nitride, while no Si source is supplied at the beginning of growth of the nitride semiconductor layer. Therefore, nitrogen atoms are not desorbed from near the nitride surface of the epitaxial substrate, thus suppressing the introduction of defects into the epitaxial film. This also makes epitaxial growth possible with a surface morphology of excellent flatness.
摘要翻译：在氮化物半导体层生长之前，在非极性面状氮化物衬底（例如m面）上生长氮化物半导体晶体的过程中，在加热到较高温度范围的过程中构成主流的气体，（暴露基板的主氮化物面的气氛）和构成主流的气体直到第一和第二氮化物半导体层的生长完成（衬底的主氮化物面露出的气氛）为止主要是那些不会对氮化物具有蚀刻效果的那些，而在氮化物半导体层的生长开始时不提供Si源。因此，氮原子不会从外延衬底的氮化物表面附近脱附，从而抑制了向外延膜的缺陷的引入。这也使得外延生长可能具有优异的平坦度的表面形态。

2. 发明授权

US08652948B2 Nitride semiconductor, nitride semiconductor crystal growth method, and nitride semiconductor light emitting element 有权
标题翻译：氮化物半导体，氮化物半导体晶体生长方法和氮化物半导体发光元件
公开(公告)号：US08652948B2
公开(公告)日：2014-02-18
申请号：US12744163
申请日：2008-11-20
申请人： Hideyoshi Horie , Kaori Kurihara
发明人： Hideyoshi Horie , Kaori Kurihara
IPC分类号： H01L21/20
CPC分类号： H01L33/0075 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/007 , H01L33/16
摘要： During the growth of a nitride semiconductor crystal on a nonpolar face nitride substrate, such as an m-face, the gas that constitutes the main flow in the process of heating up to a relatively high temperature range, before growth of the nitride semiconductor layer, (the atmosphere to which the main nitride face of the substrate is exposed) and the gas that constitutes the main flow until growth of first and second nitride semiconductor layers is completed (the atmosphere to which the main nitride face of the substrate is exposed) are primarily those that will not have an etching effect on the nitride, while no Si source is supplied at the beginning of growth of the nitride semiconductor layer. Therefore, nitrogen atoms are not desorbed from near the nitride surface of the epitaxial substrate, thus suppressing the introduction of defects into the epitaxial film. This also makes epitaxial growth possible with a surface morphology of excellent flatness.
摘要翻译：在氮化物半导体层生长之前，在非极性面状氮化物衬底（例如m面）上生长氮化物半导体晶体的过程中，在加热到较高温度范围的过程中构成主流的气体，（暴露基板的主氮化物面的气氛）和构成主流的气体直到第一和第二氮化物半导体层的生长完成（衬底的主氮化物面露出的气氛）为止主要是那些不会对氮化物具有蚀刻效果的那些，而在氮化物半导体层的生长开始时不提供Si源。因此，氮原子不会从外延衬底的氮化物表面附近脱附，从而抑制了向外延膜的缺陷的引入。这也使得外延生长可能具有优异的平坦度的表面形态。

3. 发明申请

US20110253974A1 NITRIDE SEMICONDUCTOR 有权
标题翻译：氮化物半导体
公开(公告)号：US20110253974A1
公开(公告)日：2011-10-20
申请号：US13112564
申请日：2011-05-20
申请人： Hideyoshi HORIE , Kaori Kurihara
发明人： Hideyoshi HORIE , Kaori Kurihara
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , H01L21/0237 , H01L21/0254 , H01L21/02573 , H01L21/02609 , H01L21/0262 , H01L33/0025 , H01L33/02 , H01L33/16 , H01L33/18 , H01L33/32 , H01L33/325
摘要： To provide a high-quality nitride semiconductor ensuring high emission efficiency of a light-emitting element fabricated. In the present invention, when obtaining a nitride semiconductor by sequentially stacking a one conductivity type nitride semiconductor part, a quantum well active layer structure part, and a another conductivity type nitride semiconductor part opposite the one conductivity type, the crystal is grown on a base having a nonpolar principal nitride surface, the one conductivity type nitride semiconductor part is formed by sequentially stacking a first nitride semiconductor layer and a second nitride semiconductor layer, and the second nitride semiconductor layer has a thickness of 400 nm to 20 mm and has a nonpolar outermost surface. By virtue of selecting the above-described base for crystal growth, an electron and a hole, which are contributing to light emission, can be prevented from spatial separation based on the QCSE effect and efficient radiation is realized. Also, by setting the thickness of the second nitride semiconductor layer to an appropriate range, the nitride semiconductor surface can avoid having extremely severe unevenness.
摘要翻译：提供确保所制造的发光元件的高发射效率的高质量氮化物半导体。在本发明中，当通过依次层叠一个导电型氮化物半导体部件，量子阱活性层结构部分和与一种导电类型相反的另一导电型氮化物半导体部件来获得氮化物半导体时，晶体生长在基底具有非极性主氮化物表面的情况下，通过依次层叠第一氮化物半导体层和第二氮化物半导体层而形成一个导电型氮化物半导体部，第二氮化物半导体层的厚度为400nm〜20mm，具有非极性最外面。通过选择上述用于晶体生长的基底，可以防止基于QCSE效应的有助于发光的电子和空穴进行空间分离，并且实现有效的辐射。此外，通过将第二氮化物半导体层的厚度设定在适当的范围，氮化物半导体表面可以避免具有非常严重的不均匀性。

4. 发明授权

US09048100B2 Nitride semiconductor and nitride semiconductor crystal growth method 有权
标题翻译：氮化物半导体和氮化物半导体晶体生长方法
公开(公告)号：US09048100B2
公开(公告)日：2015-06-02
申请号：US12744076
申请日：2008-11-20
申请人： Hideyoshi Horie , Kaori Kurihara
发明人： Hideyoshi Horie , Kaori Kurihara
IPC分类号： H01L21/20 , H01L21/02 , C30B25/02 , C30B29/40 , H01L33/00
CPC分类号： H01L21/02634 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/0075
摘要： A base at least one principal plane of which is a nitride is prepared for use in epitaxial growth. The base is placed on a susceptor in an epitaxial growth reactor and heated to a predetermined temperature (step A). The heating is started with inactive, nitrogen gas being supplied into the reactor. Then, active, NH3 gas is supplied. Then, a growth step (step B) of a first nitride semiconductor layer is started without an intervening step of thermally cleaning the principal nitride plane of the base. In step B, the first nitride semiconductor layer is epitaxially grown on a principal nitride plane of a base without supply of an Si source material. Then, a relatively thick, second nitride semiconductor layer is epitaxially grown on the first nitride semiconductor layer by supplying an n-type dopant source material (step C).
摘要翻译：制备其至少一个主平面为氮化物的基底用于外延生长。将基底放置在外延生长反应器中的基座上并加热至预定温度（步骤A）。加热以无效开始，氮气被供给到反应器中。然后，提供活性的NH 3气体。然后，开始第一氮化物半导体层的生长步骤（步骤B），而不需要热清洗基体的主要氮化物平面的中间步骤。在步骤B中，第一氮化物半导体层在不提供Si源材料的基底的氮化物主面上外延生长。然后，通过供给n型掺杂剂源材料（步骤C），在第一氮化物半导体层上外延生长相对厚的第二氮化物半导体层。

5. 发明授权

US08624220B2 Nitride semiconductor 有权
标题翻译：氮化物半导体
公开(公告)号：US08624220B2
公开(公告)日：2014-01-07
申请号：US13112564
申请日：2011-05-20
申请人： Hideyoshi Horie , Kaori Kurihara
发明人： Hideyoshi Horie , Kaori Kurihara
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01L33/06 , H01L21/0237 , H01L21/0254 , H01L21/02573 , H01L21/02609 , H01L21/0262 , H01L33/0025 , H01L33/02 , H01L33/16 , H01L33/18 , H01L33/32 , H01L33/325
摘要： To provide a high-quality nitride semiconductor ensuring high emission efficiency of a light-emitting element fabricated. In the present invention, when obtaining a nitride semiconductor by sequentially stacking a one conductivity type nitride semiconductor part, a quantum well active layer structure part, and a another conductivity type nitride semiconductor part opposite the one conductivity type, the crystal is grown on a base having a nonpolar principal nitride surface, the one conductivity type nitride semiconductor part is formed by sequentially stacking a first nitride semiconductor layer and a second nitride semiconductor layer, and the second nitride semiconductor layer has a thickness of 400 nm to 20 μm and has a nonpolar outermost surface. By virtue of selecting the above-described base for crystal growth, an electron and a hole, which are contributing to light emission, can be prevented from spatial separation based on the QCSE effect and efficient radiation is realized. Also, by setting the thickness of the second nitride semiconductor layer to an appropriate range, the nitride semiconductor surface can avoid having extremely severe unevenness.
摘要翻译：提供确保所制造的发光元件的高发射效率的高质量氮化物半导体。在本发明中，当通过依次层叠一个导电型氮化物半导体部件，量子阱活性层结构部分和与一种导电类型相反的另一导电型氮化物半导体部件来获得氮化物半导体时，晶体生长在基底具有非极性主氮化物表面的情况下，通过依次层叠第一氮化物半导体层和第二氮化物半导体层而形成一个导电型氮化物半导体部，并且第二氮化物半导体层的厚度为400nm〜20μm，具有非极性最外面。通过选择上述用于晶体生长的基底，可以防止基于QCSE效应的有助于发光的电子和空穴进行空间分离，并且实现有效的辐射。此外，通过将第二氮化物半导体层的厚度设定在适当的范围，氮化物半导体表面可以避免具有非常严重的不均匀性。

6. 发明申请

US20160043273A1 NITRIDE SEMICONDUCTOR 有权
标题翻译：氮化物半导体
公开(公告)号：US20160043273A1
公开(公告)日：2016-02-11
申请号：US14921570
申请日：2015-10-23
申请人： Hideyoshi HORIE , Kaori Kurihara
发明人： Hideyoshi HORIE , Kaori Kurihara
IPC分类号： H01L33/06 , H01L33/18 , H01L33/00 , H01L33/32
CPC分类号： H01L33/06 , H01L21/0237 , H01L21/0254 , H01L21/02573 , H01L21/02609 , H01L21/0262 , H01L33/0025 , H01L33/02 , H01L33/16 , H01L33/18 , H01L33/32 , H01L33/325
摘要： To provide a high-quality nitride semiconductor ensuring high emission efficiency of a light-emitting element fabricated. In the present invention, when obtaining a nitride semiconductor by sequentially stacking a one conductivity type nitride semiconductor part, a quantum well active layer structure part, and a another conductivity type nitride semiconductor part opposite the one conductivity type, the crystal is grown on a base having a nonpolar principal nitride surface, the one conductivity type nitride semiconductor part is formed by sequentially stacking a first nitride semiconductor layer and a second nitride semiconductor layer, and the second nitride semiconductor layer has a thickness of 400 nm to 20 μm and has a nonpolar outermost surface. By virtue of selecting the above-described base for crystal growth, an electron and a hole, which are contributing to light emission, can be prevented from spatial separation based on the QCSE effect and efficient radiation is realized. Also, by setting the thickness of the second nitride semiconductor layer to an appropriate range, the nitride semiconductor surface can avoid having extremely severe unevenness.
摘要翻译：提供确保所制造的发光元件的高发射效率的高质量氮化物半导体。在本发明中，当通过依次层叠一个导电型氮化物半导体部件，量子阱活性层结构部分和与一种导电类型相反的另一导电型氮化物半导体部件来获得氮化物半导体时，晶体生长在基底具有非极性主氮化物表面的情况下，通过依次层叠第一氮化物半导体层和第二氮化物半导体层而形成一个导电型氮化物半导体部，第二氮化物半导体层的厚度为400nm〜20μm，具有非极性最外面。通过选择上述用于晶体生长的基底，可以防止基于QCSE效应的有助于发光的电子和空穴进行空间分离，并且实现有效的辐射。此外，通过将第二氮化物半导体层的厚度设定在适当的范围，氮化物半导体表面可以避免具有非常严重的不均匀性。

7. 发明申请

US20100252835A1 NITRIDE SEMICONDUCTOR AND NITRIDE SEMICONDUCTOR CRYSTAL GROWTH METHOD 有权
标题翻译：氮化物半导体和氮化物半导体晶体生长方法
公开(公告)号：US20100252835A1
公开(公告)日：2010-10-07
申请号：US12744076
申请日：2008-11-20
申请人： Hideyoshi Horie , Kaori Kurihara
发明人： Hideyoshi Horie , Kaori Kurihara
IPC分类号： H01L29/20 , C30B23/06
CPC分类号： H01L21/02634 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/0075
摘要： A base at least one principal plane of which is a nitride is prepared for use in epitaxial growth. The base is placed on a susceptor in an epitaxial growth reactor and heated to a predetermined temperature (step A). The heating is started with inactive, nitrogen gas being supplied into the reactor. Then, active, NH3 gas is supplied. Then, a growth step (step B) of a first nitride semiconductor layer is started without an intervening step of thermally cleaning the principal nitride plane of the base. In step B, the first nitride semiconductor layer is epitaxially grown on a principal nitride plane of a base without supply of an Si source material. Then, a relatively thick, second nitride semiconductor layer is epitaxially grown on the first nitride semiconductor layer by supplying an n-type dopant source material (step C).
摘要翻译：制备其至少一个主平面为氮化物的基底用于外延生长。将基底放置在外延生长反应器中的基座上并加热至预定温度（步骤A）。加热以无效开始，氮气被供给到反应器中。然后，提供活性的NH 3气体。然后，开始第一氮化物半导体层的生长步骤（步骤B），而不需要热清洗基底的主氮化物平面的中间步骤。在步骤B中，第一氮化物半导体层在不提供Si源材料的基底的氮化物主面上外延生长。然后，通过供给n型掺杂剂源材料（步骤C），在第一氮化物半导体层上外延生长相对厚的第二氮化物半导体层。

8. 发明授权

US5500868A Vertical-to-surface transmission electro-photonic device with ion implanted current control regions 失效
标题翻译：具有离子注入电流控制区域的垂直到表面透射电子光子器件
公开(公告)号：US5500868A
公开(公告)日：1996-03-19
申请号：US190242
申请日：1994-02-01
申请人： Kaori Kurihara
发明人： Kaori Kurihara
IPC分类号： H01S5/00 , H01S5/183 , H01S5/20 , H01S3/18
CPC分类号： H01S5/18308 , H01S5/18305 , H01S5/18341 , H01S5/18344 , H01S5/18352 , H01S5/2063 , H01S5/2081 , H01S5/2086
摘要： The invention provides a vertical-to-surface transmission electro-photonic semiconductor device with a mesa structure of light reflective multiple layers in which the device includes a high resistive region for a carrier confinement. The high resistive region is formed by an ion-implantation of proton in a downward oblique direction during a rotation of a semiconductor substrate with use of a photo-resist mask whose horizontal width is larger than that of the mesa structure. The high resistive region defines a light emitting area of an active layer, an inverse circular truncated cone like definition of a top cladding region and a circular truncated cone like definition of a bottom cladding region. The oblique angle ion-implantation permits the top cladding region to be free from any exposure of the ion-implantation thereby an electrical resistance of the device is reduced.
摘要翻译：本发明提供一种具有光反射多层的台面结构的垂直对表面透射电子光子半导体器件，其中器件包括用于载流子限制的高电阻区域。通过使用水平宽度大于台面结构的光致抗蚀剂掩模在半导体衬底的旋转期间，通过在向下倾斜的方向上离子注入质子来形成高电阻区域。高电阻区域限定有源层的发光区域，如顶部包层区域的倒圆锥形锥体，以及底部包层区域的圆形截锥体。倾斜角度离子注入允许顶部覆层区域没有离子注入的任何暴露，从而减小了器件的电阻。

9. 发明授权

US5208820A Optical device with low-resistive multi-level reflecting structure 失效
标题翻译：具有低电阻多层反射结构的光器件
公开(公告)号：US5208820A
公开(公告)日：1993-05-04
申请号：US817620
申请日：1992-01-07
申请人： Kaori Kurihara , Mitsunori Sugimoto
发明人： Kaori Kurihara , Mitsunori Sugimoto
IPC分类号： H01L33/00 , H01S5/183 , H01S5/223 , H01S5/30 , H01S5/32
CPC分类号： H01S5/18361 , H01L33/0062 , H01S5/18305 , H01S5/305 , H01S5/3202 , H01S5/3211
摘要： An optical device has a multi-layer reflecting structure provided in association with an active layer for allowing light to oscillate, and the multi-layer reflecting structure is implemented by a plurality of units each having a high refractive film, a low refractive film and a layer for improving conductivity of the multi-layer reflecting structure, wherein the layer is implemented by a heavily doped impurity region with an impurity profile tracing plots of a delta function or by a quasi-graded super-lattice film microscopically graded in composition between the high and low refractive films.
摘要翻译：光学器件具有与有源层相关联地设置的用于允许光振荡的多层反射结构，并且多层反射结构由多个单元实现，每个单元具有高折射膜，低折射膜和层，用于改善多层反射结构的导电性，其中该层由具有杂质分布曲线追踪三角函数图的重掺杂杂质区域或通过显微分级在组成之间的准梯度超晶格膜在高和低折射膜。

10. 发明申请

US20050230672A1 III-V compound semiconductor crystals 审中-公开
标题翻译： III-V族化合物半导体晶体
公开(公告)号：US20050230672A1
公开(公告)日：2005-10-20
申请号：US11084169
申请日：2005-03-21
申请人： Kaori Kurihara , Kenji Shimoyama
发明人： Kaori Kurihara , Kenji Shimoyama
IPC分类号： C30B25/02 , H01L21/205 , H01L29/06 , H01L21/00
CPC分类号： C30B29/40 , C30B25/02 , H01L21/02392 , H01L21/02546 , H01L21/02579 , H01L21/0262 , H01L21/02631
摘要： III-V Compound semiconductor crystals characterized by containing Al and In as main constituent elements of group III, and also containing a constituent element of group V, and characterized in that the carbon concentration in the compound semiconductor crystals is 1×1016 cm−3 or higher, and the oxygen concentration therein is 1×1018 cm−3 or lower and is not higher than the carbon concentration; and a method for producing the III-V compound semiconductor crystals. By using the III-V compound semiconductor crystals, a semiconductor device showing satisfactory electric conductivity characteristics, and a semiconductor laser showing satisfactory high speed modulation characteristics can be provided.
摘要翻译： III-V化合物半导体晶体，其特征在于，含有Al和In作为III族的主要组成元素，并且还含有V族的构成元素，其特征在于，化合物半导体晶体中的碳浓度为1×10 16， SUP> 3×3以上，氧浓度为1×10 8 -3 -3以下，不高于碳浓度 ; 和III-V族化合物半导体晶体的制造方法。通过使用III-V族化合物半导体晶体，可以提供显示出令人满意的导电特性的半导体器件和表现出令人满意的高速调制特性的半导体激光器。

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