专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08652948B2 Nitride semiconductor, nitride semiconductor crystal growth method, and nitride semiconductor light emitting element 有权
标题翻译：氮化物半导体，氮化物半导体晶体生长方法和氮化物半导体发光元件
公开(公告)号：US08652948B2
公开(公告)日：2014-02-18
申请号：US12744163
申请日：2008-11-20
申请人： Hideyoshi Horie , Kaori Kurihara
发明人： Hideyoshi Horie , Kaori Kurihara
IPC分类号： H01L21/20
CPC分类号： H01L33/0075 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/007 , H01L33/16
摘要： During the growth of a nitride semiconductor crystal on a nonpolar face nitride substrate, such as an m-face, the gas that constitutes the main flow in the process of heating up to a relatively high temperature range, before growth of the nitride semiconductor layer, (the atmosphere to which the main nitride face of the substrate is exposed) and the gas that constitutes the main flow until growth of first and second nitride semiconductor layers is completed (the atmosphere to which the main nitride face of the substrate is exposed) are primarily those that will not have an etching effect on the nitride, while no Si source is supplied at the beginning of growth of the nitride semiconductor layer. Therefore, nitrogen atoms are not desorbed from near the nitride surface of the epitaxial substrate, thus suppressing the introduction of defects into the epitaxial film. This also makes epitaxial growth possible with a surface morphology of excellent flatness.
摘要翻译：在氮化物半导体层生长之前，在非极性面状氮化物衬底（例如m面）上生长氮化物半导体晶体的过程中，在加热到较高温度范围的过程中构成主流的气体，（暴露基板的主氮化物面的气氛）和构成主流的气体直到第一和第二氮化物半导体层的生长完成（衬底的主氮化物面露出的气氛）为止主要是那些不会对氮化物具有蚀刻效果的那些，而在氮化物半导体层的生长开始时不提供Si源。因此，氮原子不会从外延衬底的氮化物表面附近脱附，从而抑制了向外延膜的缺陷的引入。这也使得外延生长可能具有优异的平坦度的表面形态。

2. 发明申请

US20110253974A1 NITRIDE SEMICONDUCTOR 有权
标题翻译：氮化物半导体
公开(公告)号：US20110253974A1
公开(公告)日：2011-10-20
申请号：US13112564
申请日：2011-05-20
申请人： Hideyoshi HORIE , Kaori Kurihara
发明人： Hideyoshi HORIE , Kaori Kurihara
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , H01L21/0237 , H01L21/0254 , H01L21/02573 , H01L21/02609 , H01L21/0262 , H01L33/0025 , H01L33/02 , H01L33/16 , H01L33/18 , H01L33/32 , H01L33/325
摘要： To provide a high-quality nitride semiconductor ensuring high emission efficiency of a light-emitting element fabricated. In the present invention, when obtaining a nitride semiconductor by sequentially stacking a one conductivity type nitride semiconductor part, a quantum well active layer structure part, and a another conductivity type nitride semiconductor part opposite the one conductivity type, the crystal is grown on a base having a nonpolar principal nitride surface, the one conductivity type nitride semiconductor part is formed by sequentially stacking a first nitride semiconductor layer and a second nitride semiconductor layer, and the second nitride semiconductor layer has a thickness of 400 nm to 20 mm and has a nonpolar outermost surface. By virtue of selecting the above-described base for crystal growth, an electron and a hole, which are contributing to light emission, can be prevented from spatial separation based on the QCSE effect and efficient radiation is realized. Also, by setting the thickness of the second nitride semiconductor layer to an appropriate range, the nitride semiconductor surface can avoid having extremely severe unevenness.
摘要翻译：提供确保所制造的发光元件的高发射效率的高质量氮化物半导体。在本发明中，当通过依次层叠一个导电型氮化物半导体部件，量子阱活性层结构部分和与一种导电类型相反的另一导电型氮化物半导体部件来获得氮化物半导体时，晶体生长在基底具有非极性主氮化物表面的情况下，通过依次层叠第一氮化物半导体层和第二氮化物半导体层而形成一个导电型氮化物半导体部，第二氮化物半导体层的厚度为400nm〜20mm，具有非极性最外面。通过选择上述用于晶体生长的基底，可以防止基于QCSE效应的有助于发光的电子和空穴进行空间分离，并且实现有效的辐射。此外，通过将第二氮化物半导体层的厚度设定在适当的范围，氮化物半导体表面可以避免具有非常严重的不均匀性。

3. 发明授权

US07977682B2 Light emitting device 失效
标题翻译：发光装置
公开(公告)号：US07977682B2
公开(公告)日：2011-07-12
申请号：US12278798
申请日：2007-01-26
申请人： Hideyoshi Horie
发明人： Hideyoshi Horie
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20
摘要： Provided is a compound light emitting device which facilitates easy connection of power supply lines, and has a high emission intensity in-plane uniformity. The light emitting device includes a first-conduction-type cladding layer, active layer structure, and second-conduction-type cladding layer each containing a III-V compound semiconductor. The first-conduction-type cladding layer and second-conduction-type cladding layer sandwich the active layer structure. The light emitting device includes a first-conduction-type-side electrode (7) for injecting carriers into the first-conduction-type cladding layer, and a second-conduction-type-side electrode (6) for injecting carriers into the second-conduction-type cladding layer. The first-conduction-type-side electrode (7) has an opening (7p). The second-conduction-type-side electrode (6) has a main-electrode-portion (6-0) partially surrounded by the first-conduction-type-side electrode (7), and extracting portions (6-1, 6-2) for extracting the main-electrode-portion (6-0) outside the first-conduction-type-side electrode (7) though the opening (7p). The main-electrode-portion (6-0) is a part of a constant-width figure. The interval between the outer edge of the main-electrode-portion (6-0) and the inner edge of the first-conduction-type-side electrode (7) is almost constant.
摘要翻译：提供了一种便于连接电源线并具有高发射强度的面内均匀性的复合发光装置。发光器件包括每个含有III-V族化合物半导体的第一导电型包覆层，有源层结构和第二导电型包覆层。第一导电型包层和第二导电型包层夹着有源层结构。发光器件包括用于将载流子注入到第一导电型包层中的第一导电型侧电极（7）和用于将载流子注入第二导电型包层的第二导电型侧电极（6）导电型包覆层。第一导电型侧电极（7）具有开口部（7p）。第二导电型侧电极（6）具有由第一导电型侧电极（7）部分地包围的主电极部（6-0），提取部（6-1,6〜 2），用于通过开口（7p）提取第一导电型侧电极（7）外部的主电极部分（6-0）。主电极部分（6-0）是恒定宽度图的一部分。主电极部分（6-0）的外边缘与第一导电型侧电极（7）的内边缘之间的间隔几乎恒定。

4. 发明申请

US20100304570A1 ETCHING METHOD AND METHOD FOR MANUFACTURING OPTICAL/ELECTRONIC DEVICE USING THE SAME 审中-公开
标题翻译：用于制造使用该光学/电子器件的光学/电子器件的蚀刻方法和方法
公开(公告)号：US20100304570A1
公开(公告)日：2010-12-02
申请号：US12740808
申请日：2008-10-31
申请人： Hideyoshi Horie , Takashi Fukada
发明人： Hideyoshi Horie , Takashi Fukada
IPC分类号： H01L21/3065 , H01L21/306
CPC分类号： H01L21/3081 , H01L21/30621 , H01L21/32134 , H01L33/0062 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a semiconductor etching method whereby a semiconductor layer made of, for example, a Group III-V nitride semiconductor resistant to etching can be etched by a relatively easier process. This etching method comprises forming a metal-fluoride layer 3 at least as a part of an etching mask on the surface of a base structure (1,2); treating the metal-fluoride layer with a liquid; and etching the base structure using the metal-fluoride layer as a mask.
摘要翻译：公开了一种半导体蚀刻方法，由此可以通过相对更容易的工艺来蚀刻由例如耐蚀刻的III-V族氮化物半导体制成的半导体层。该蚀刻方法包括在基底结构（1,2）的表面上至少形成蚀刻掩模的一部分的金属 - 氟化物层3; 用液体处理金属氟化物层; 并使用金属氟化物层作为掩模蚀刻基底结构。

5. 发明授权

US06791181B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US06791181B2
公开(公告)日：2004-09-14
申请号：US09995802
申请日：2001-11-29
申请人： Hideyoshi Horie , Nobuhiro Arai , Naoyuki Komuro
发明人： Hideyoshi Horie , Nobuhiro Arai , Naoyuki Komuro
IPC分类号： H01L2334
CPC分类号： H01L33/642 , H01L24/45 , H01L25/167 , H01L2224/45015 , H01L2224/45144 , H01L2224/49111 , H01L2924/01322 , H01L2924/12042 , H01L2924/12043 , H01S5/02264 , H01S5/02272 , H01S5/02276 , H01S5/024 , H01S5/02415 , H01S5/0425 , H01L2924/20753 , H01L2924/00014 , H01L2924/00
摘要： The present invention discloses a semiconductor light emitting device comprising at least one semiconductor light emitting element of edge-emission type, a first heat sink and a second heat sink, wherein at least a part of an electrode for the first-conduction-type semiconductor of the semiconductor light emitting element is in contact with the first heat sink; at least a part of an electrode for the second-conduction-type semiconductor of the semiconductor light emitting element is in contact with the second heat sink; and the first heat sink and the second heat sink are in contact with each other in a junction overlooking one of the two side planes which do not compose the facets of the cavity in the semiconductor light emitting element. The semiconductor light emitting device of the present invention is characterized by having excellent heat spreading, allowing easy and reproducible assembling even if the components or the element composing the semiconductor light emitting device have dimensional errors, and allowing simple optical coupling with an optical fiber or the like.
摘要翻译：本发明公开了一种半导体发光器件，其包括至少一种边缘发射型半导体发光元件，第一散热器和第二散热器，其中至少一部分用于第一导电型半导体的电极半导体发光元件与第一散热器接触; 用于半导体发光元件的第二导电型半导体的电极的至少一部分与第二散热器接触; 并且第一散热器和第二散热器在俯视不构成半导体发光元件中的空腔的两个侧平面中的一个的接合处彼此接触。本发明的半导体发光器件的特征在于具有优异的散热性，即使构成半导体发光元件的元件或元件具有尺寸误差，并且允许与光纤的简单的光耦合或者喜欢。

6. 发明申请

US20090315045A1 INTEGRATED SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：集成半导体发光器件及其制造方法
公开(公告)号：US20090315045A1
公开(公告)日：2009-12-24
申请号：US12299253
申请日：2007-04-30
申请人： Hideyoshi Horie
发明人： Hideyoshi Horie
IPC分类号： H01L33/00
CPC分类号： H01L27/153
摘要： An integrated compound semiconductor light-emitting-device capable of emitting light as a large-area plane light source, exhibiting excellent in-plane uniformity in an emission intensity is provided. The light-emitting-device comprising a plurality of light-emitting-units formed over a substrate, wherein the light-emitting-unit has a compound semiconductor thin-film crystal layer 24, 25, 26 a first and a second-conductivity-type-side electrode 27, 28; a main light-extraction direction is the side of the substrate, and the first and the second-conductivity-type-side electrode are formed on the opposite side to the light-extraction direction; the light-emitting-units are electrically separated each other by a light-emitting-unit separation-trench which is formed by removing the thin-film crystal layer from the surface to an inside portion of the buffer layer.
摘要翻译：提供了能够发光作为大面积平面光源的综合化合物半导体发光装置，其表现出优异的发射强度的面内均匀性。该发光装置包括在基板上形成的多个发光单元，其中，发光单元具有化合物半导体薄膜晶体层24,25,26，第一和第二导电型侧电极27,28; 主要的光提取方向是基板的一侧，并且第一和第二导电型侧电极形成在与光提取方向相反的一侧上; 发光单元由通过从缓冲层的表面到内部部分去除薄膜晶体层而形成的发光单元分离沟槽彼此电分离。

7. 发明申请

US20090026488A1 NITRIDE SEMICONDUCTOR MATERIAL AND PRODUCTION PROCESS OF NITRIDE SEMICONDUCTOR CRYSTAL 审中-公开
标题翻译：氮化物半导体晶体的氮化物半导体材料和生产工艺
公开(公告)号：US20090026488A1
公开(公告)日：2009-01-29
申请号：US11816553
申请日：2006-02-08
申请人： Kazumasa Kiyomi , Hideyoshi Horie , Toshio Ishiwatari , Isao Fujimura
发明人： Kazumasa Kiyomi , Hideyoshi Horie , Toshio Ishiwatari , Isao Fujimura
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： C23C16/34 , C30B25/18 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02581 , H01L21/0262 , H01L33/007
摘要： A nitride semiconductor material comprising a semiconductor or dielectric substrate having thereon a first nitride semiconductor layer group, wherein the surface of the first nitride semiconductor layer group has an RMS of 5 nm or less, a variation of X-ray half-width within ±30%, a light reflectance of the surface of 15% or more, and a variation thereof of ±10% or less, and the thickness of said first nitride semiconductor layer group is 25 μm or more. This nitride semiconductor material is excellent in uniformity and stability, assured of a low production cost, and useful as a substrate for a nitride semiconductor-type device.
摘要翻译：一种氮化物半导体材料，包括其上具有第一氮化物半导体层组的半导体或电介质衬底，其中所述第一氮化物半导体层组的表面具有5nm或更小的RMS，X射线半值的变化在±30 ％，表面的光反射率为15％以上，其变化为±10％以下，第一氮化物半导体层组的厚度为25μm以上。该氮化物半导体材料的均匀性和稳定性优异，生产成本低，可用作氮化物半导体型器件的基板。

8. 发明授权

US06744074B2 Compound semiconductor light emitting device and method of fabricating the same 失效
标题翻译：化合物半导体发光器件及其制造方法
公开(公告)号：US06744074B2
公开(公告)日：2004-06-01
申请号：US09968802
申请日：2001-10-03
申请人： Hideyoshi Horie , Hirotaka Ohta , Toshinari Fujimori
发明人： Hideyoshi Horie , Hirotaka Ohta , Toshinari Fujimori
IPC分类号： H01L3300
CPC分类号： H01L33/44 , B82Y20/00 , H01L33/0045 , H01S5/0021 , H01S5/028 , H01S5/0281 , H01S5/0282 , H01S5/16 , H01S5/162 , H01S5/164 , H01S5/3054 , H01S5/3086 , H01S5/34313 , H01S5/34353
摘要： Compound semiconductor light emitting devices capable of suppressing the surface state density on the facets of semiconductor light emitting devices such as semiconductor lasers for a long time and stable operating even when the passivation layer diffuses can be easily obtained. Compound semiconductor light emitting devices with an emission wavelength of &lgr; (nm) wherein a first conduction type of clad layer, an active layer and a second conduction type of clad layer are grown on a substrate and two facets are opposite to each other so as to form a cavity, characterized in that said active layer is transparent to the emission wavelength in the vicinities of the facets and that the surfaces of the first conduction type of clad layer, active layer and second conduction type of clad layer forming said facets are each coated with a passivation layer.
摘要翻译：即使钝化层扩散，也能够长时间地抑制半导体激光器等半导体发光元件的面的表面状态密度，即使钝化层扩散也能够稳定地工作的化合物半导体发光元件。发光波长为λ（nm）的化合物半导体发光器件，其中在衬底上生长第一导电类型的包层，有源层和第二导电类型的包层，并且两个面彼此相对，从而形成空腔，其特征在于，所述有源层对于小面附近的发射波长是透明的，并且形成所述小面的第一导电类型的包覆层，有源层和第二导电类型的覆盖层的表面各自被涂覆具有钝化层。

9. 发明授权

US06677618B1 Compound semiconductor light emitting device 失效
标题翻译：复合半导体发光器件
公开(公告)号：US06677618B1
公开(公告)日：2004-01-13
申请号：US09453279
申请日：1999-12-03
申请人： Hideyoshi Horie , Hirotaka Ohta , Toshinari Fujimori
发明人： Hideyoshi Horie , Hirotaka Ohta , Toshinari Fujimori
IPC分类号： H01L3300
CPC分类号： H01L33/44 , H01L33/30 , H01S5/0282
摘要： Disclosed compound semiconductor light emitting devices have a substrate, a compound semiconductor layer, formed on the substrate, containing a first conductive type clad layer, an active layer, and a second conductive type clad layer, and a resonator structure formed of two opposing facets of the compound semiconductor layer, wherein surfaces of the first conductive type clad layer, the active layer, and the second conductive type clad layer forming the facet of the compound semiconductor are covered with a passivation layer, wherein at least one element constituting the facet of the compound semiconductor layer is not coupled to oxygen, and wherein a portion of the passivation layer adjacent to the facet of the compound semiconductor layer contains oxygen as a structural element. The compound semiconductor light emitting devices according to the invention can stably suppress, for a long time, the surface state densities on the facets occurring on extrinsic causes, and are high performance devices with establishing both of a high output and a long lifetime.
摘要翻译：公开的化合物半导体发光器件具有形成在基板上的基板，化合物半导体层，其包含第一导电型覆盖层，有源层和第二导电型覆盖层，以及由两个相对的面化合物半导体层，其中形成化合物半导体的面的第一导电型覆盖层，有源层和第二导电型覆盖层的表面被钝化层覆盖，其中至少一个元件构成化合物半导体层不与氧结合，并且其中与化合物半导体层的小面相邻的钝化层的一部分含有氧作为结构元素。根据本发明的化合物半导体发光器件可以长期稳定地抑制在外在原因上产生的面上的表面状态密度，并且是具有高输出和长寿命两者的高性能器件。

10. 发明授权

US06323052B1 Compound semiconductor light emitting device and method of fabricating the same 失效
标题翻译：化合物半导体发光器件及其制造方法
公开(公告)号：US06323052B1
公开(公告)日：2001-11-27
申请号：US09095884
申请日：1998-06-11
申请人： Hideyoshi Horie , Hirotaka Ohta , Toshinari Fujimori
发明人： Hideyoshi Horie , Hirotaka Ohta , Toshinari Fujimori
IPC分类号： H01L2100
CPC分类号： H01L33/44 , B82Y20/00 , H01L33/0045 , H01S5/0021 , H01S5/028 , H01S5/0281 , H01S5/0282 , H01S5/16 , H01S5/162 , H01S5/164 , H01S5/3054 , H01S5/3086 , H01S5/34313 , H01S5/34353
摘要： Compound semiconductor light emitting devices capable of suppressing the surface state density on the facets of semiconductor light emitting devices such as semiconductor lasers for a long time and stable operating even when the passivation layer diffuses can be easily obtained. Compound semiconductor light emitting devices with an emission wavelength of &lgr; (nm) wherein a first conduction type of clad layer, an active layer and a second conduction type of clad layer are grown on a substrate and two facets are opposite to each other so as to form a cavity, characterized in that said active layer is transparent to the emission wavelength in the vicinities of the facets and that the surfaces of the first conduction type of clad layer, active layer and second conduction type of clad layer forming said facets are each coated with a passivation layer.
摘要翻译：即使钝化层扩散，也能够长时间地抑制半导体激光器等半导体发光元件的面的表面状态密度，即使钝化层扩散也能够稳定地工作的化合物半导体发光元件。发光波长为兰姆（nm）的化合物半导体发光器件，其中在衬底上生长第一导电类型的包层，有源层和第二导电类型的包层，并且两个面彼此相对，从而形成空腔，其特征在于，所述有源层对于小面附近的发射波长是透明的，并且形成所述小面的第一导电类型的包覆层，有源层和第二导电类型的覆盖层的表面各自被涂覆具有钝化层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式