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1. 发明授权

US4429397A Buried heterostructure laser diode 失效
标题翻译：埋地异质结激光二极管
公开(公告)号：US4429397A
公开(公告)日：1984-01-31
申请号：US277508
申请日：1981-06-26
申请人： Mitsunori Sugimoto , Hidenori Nomura
发明人： Mitsunori Sugimoto , Hidenori Nomura
IPC分类号： H01S5/227 , H01S3/19
CPC分类号： H01S5/227
摘要： According to the present invention, an active semiconductor layer is provided on a mesa top of a semiconductor substrate having a strip-shaped mesa structure. A first clad layer is provided on the surface of the active layer and on the sides of the mesa to burry the top active region. Thereafter a pair of current blocking layers are provided on the first clad layer except for the top surface portion of the mesa stripe and a second clad layer is provided on the current blocking layers and the exposed first clad layer.
摘要翻译：根据本发明，在具有带状台面结构的半导体基板的台面上设置有源半导体层。在活性层的表面和台面的侧面上设置第一包覆层以使顶部活性区域埋下。此后，在第一覆盖层上设置一对电流阻挡层，除了台面条的顶表面部分之外，并且在电流阻挡层和暴露的第一覆盖层上设置第二覆盖层。

2. 发明授权

US5084748A Semiconductor optical memory having a low switching voltage 失效
标题翻译：具有低开关电压的半导体光学存储器
公开(公告)号：US5084748A
公开(公告)日：1992-01-28
申请号：US676476
申请日：1991-03-27
申请人： Kenichi Kasahara , Ichiro Ogura , Yoshiharu Tashiro , Mitsunori Sugimoto
发明人： Kenichi Kasahara , Ichiro Ogura , Yoshiharu Tashiro , Mitsunori Sugimoto
IPC分类号： G11C11/42 , H01L27/06 , H01L27/10 , H01L27/144
CPC分类号： H01L27/1443 , H01L27/0605
摘要： A semiconductor optical memory includes a gate layer composed of a p- first semiconductor layer, a p- or n- second semiconductor layer, and an n- third semiconductor layer provided between a cathode layer and an anode layer. Where the second layer is of n- type, an impurity concentration of the n- second semiconductor layer is lower than an impurity concentration of the n- third semiconductor layer, and a bandgap eneray of the n- third semiconductor layer is lower than bandgap energies of the cathode and anode layers. Where the second layer is of p- type, an impurity concentration of the p- second semiconductor layer is lower than an impurity concentration of the p- first semiconductor layer, and a bandgap energy of the p- first semiconductor layer is lower than bandgap energies of the cathode and anode layers. As a result, a response speed becomes as fast as several 100 Mb/s.
摘要翻译：半导体光学存储器包括由p-第一半导体层，p-或n-第二半导体层构成的栅极层以及设置在阴极层和阳极层之间的第三 - 第三半导体层。在第二层为n型的情况下，第n半导体层的杂质浓度低于第n-n半导体层的杂质浓度，并且n - 第3半导体层的带隙能量低于带隙能量的阴极和阳极层。在第二层为p型的情况下，p型第二半导体层的杂质浓度低于p型第一半导体层的杂质浓度，p型第一半导体层的带隙能量低于带隙能量的阴极和阳极层。结果，响应速度变成几百兆比特/秒。

3. 发明授权

US5028969A Semiconductor device for a space modulation matrix and method for driving a space modulation matrix 失效
标题翻译：用于空间调制矩阵的半导体器件和用于驱动空间调制矩阵的方法
公开(公告)号：US5028969A
公开(公告)日：1991-07-02
申请号：US406472
申请日：1989-09-13
申请人： Kenichi Kasahara , Yoshiharu Tashiro , Mitsunori Sugimoto , Keiichi Kubota , Shigeru Kawai , Ichiro Ogura
发明人： Kenichi Kasahara , Yoshiharu Tashiro , Mitsunori Sugimoto , Keiichi Kubota , Shigeru Kawai , Ichiro Ogura
IPC分类号： G02F1/015 , G02F1/017 , G02F1/31 , G06N3/063 , G06N3/067 , G11C7/00
CPC分类号： B82Y20/00 , G02F1/017 , G02F1/31 , G06N3/063 , G06N3/0675 , G11C7/005 , G02F1/015 , G02F2203/12
摘要： A space modulation matrix is composed of semiconductor transmittivity modulation elements arranged in a matrix pattern. A transmittivity of the transmittivity modulation elements is changed by supplying a light or applying a voltage greater than a switching voltage of the transmittivity modulation elements to a selected number of the transmittivity modulation elements, so that a space modulation is provided on the space modulation matrix, and is renewed by any number of times.
摘要翻译：空间调制矩阵由以矩阵图案排列的半导体透射率调制元件组成。通过向选定数量的透射率调制元件供给光或施加大于透射率调制元件的开关电压的电压来改变透射率调制元件的透射率，从而在空间调制矩阵上提供空间调制，并重新任意多次。

4. 发明授权

US5208820A Optical device with low-resistive multi-level reflecting structure 失效
标题翻译：具有低电阻多层反射结构的光器件
公开(公告)号：US5208820A
公开(公告)日：1993-05-04
申请号：US817620
申请日：1992-01-07
申请人： Kaori Kurihara , Mitsunori Sugimoto
发明人： Kaori Kurihara , Mitsunori Sugimoto
IPC分类号： H01L33/00 , H01S5/183 , H01S5/223 , H01S5/30 , H01S5/32
CPC分类号： H01S5/18361 , H01L33/0062 , H01S5/18305 , H01S5/305 , H01S5/3202 , H01S5/3211
摘要： An optical device has a multi-layer reflecting structure provided in association with an active layer for allowing light to oscillate, and the multi-layer reflecting structure is implemented by a plurality of units each having a high refractive film, a low refractive film and a layer for improving conductivity of the multi-layer reflecting structure, wherein the layer is implemented by a heavily doped impurity region with an impurity profile tracing plots of a delta function or by a quasi-graded super-lattice film microscopically graded in composition between the high and low refractive films.
摘要翻译：光学器件具有与有源层相关联地设置的用于允许光振荡的多层反射结构，并且多层反射结构由多个单元实现，每个单元具有高折射膜，低折射膜和层，用于改善多层反射结构的导电性，其中该层由具有杂质分布曲线追踪三角函数图的重掺杂杂质区域或通过显微分级在组成之间的准梯度超晶格膜在高和低折射膜。

5. 发明授权

US4823352A Semiconductor laser with a variable oscillation wavelength 失效
标题翻译：具有可变振荡波长的半导体激光器
公开(公告)号：US4823352A
公开(公告)日：1989-04-18
申请号：US15252
申请日：1987-02-13
申请人： Mitsunori Sugimoto
发明人： Mitsunori Sugimoto
IPC分类号： H01S5/00 , H01S5/042 , H01S5/0625 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/06255 , H01S5/34313 , H01S5/3418 , H01S5/3432
摘要： An improved semiconductor laser comprises an active region of quantum well, at least two cladding layers positioned at both sides of said active region, and two electrodes provided separately at one side of at least one cladding layer of said at least two cladding layers so that a laser oscillation is produced in a wide wavelength range and high response rate for the reason why the wavelength of a laser oscillation can be changed in wavelengths in the vicinity of transition energy E.sub.ke-HH between n=k electron quantum and n=k heavy hole quantum level (k=1, 2, 3 - - - ) in accordance with the control of current to be injected from one electrode of said two electrodes or voltage to be applied to said one electrode.
摘要翻译：改进的半导体激光器包括量子阱的有源区，位于所述有源区两侧的至少两个覆层，以及分别设置在所述至少两个覆层的至少一个覆层的一侧的两个电极，激光振荡在宽波长范围和高响应速度下产生，因为激光振荡的波长可以在n = k电子量子和n = k重孔量子之间的跃迁能量Eke-HH附近的波长中改变根据从所述两个电极的一个电极注入的电流的控制或要施加到所述一个电极的电压来控制电平（k = 1,2,3， - - ）。

6. 发明授权

US4833511A Phototransistor device 失效
标题翻译：光电晶体管装置
公开(公告)号：US4833511A
公开(公告)日：1989-05-23
申请号：US15464
申请日：1987-02-17
申请人： Mitsunori Sugimoto
发明人： Mitsunori Sugimoto
IPC分类号： H01L31/10 , G02F1/017 , G02F3/02 , H01L31/0352 , H01L31/11 , H01L31/12 , H01L31/14
CPC分类号： B82Y20/00 , G02F1/017 , H01L31/035236 , H01L31/1105 , H01L31/125
摘要： An improved phototransistor device comprises a collector region and a base region respectively provided on the opposite sides of a multiple quantum well, and an emitter region provided on one side of the base region. A reverse-biased voltage is applied across the multiple quantum well while incident light is input to be absorbed in the multiple quantum well thereby producing photocurrent therein. In the improved phototransistor device, a higher photocurrent level is obtained in accordance with the amplification thereof even if the incident light is very small in its power.
摘要翻译：改进的光电晶体管装置包括分别设置在多量子阱的相对侧上的集电极区域和基极区域以及设置在基极区域的一侧上的发射极区域。反向偏置电压施加在多量子阱上，而入射光被输入以被吸收在多量子阱中，从而在其中产生光电流。在改进的光电晶体管装置中，即使入射光的功率非常小，也可以根据其放大获得更高的光电流水平。

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