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1. 发明授权

US08652948B2 Nitride semiconductor, nitride semiconductor crystal growth method, and nitride semiconductor light emitting element 有权
标题翻译：氮化物半导体，氮化物半导体晶体生长方法和氮化物半导体发光元件
公开(公告)号：US08652948B2
公开(公告)日：2014-02-18
申请号：US12744163
申请日：2008-11-20
申请人： Hideyoshi Horie , Kaori Kurihara
发明人： Hideyoshi Horie , Kaori Kurihara
IPC分类号： H01L21/20
CPC分类号： H01L33/0075 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/007 , H01L33/16
摘要： During the growth of a nitride semiconductor crystal on a nonpolar face nitride substrate, such as an m-face, the gas that constitutes the main flow in the process of heating up to a relatively high temperature range, before growth of the nitride semiconductor layer, (the atmosphere to which the main nitride face of the substrate is exposed) and the gas that constitutes the main flow until growth of first and second nitride semiconductor layers is completed (the atmosphere to which the main nitride face of the substrate is exposed) are primarily those that will not have an etching effect on the nitride, while no Si source is supplied at the beginning of growth of the nitride semiconductor layer. Therefore, nitrogen atoms are not desorbed from near the nitride surface of the epitaxial substrate, thus suppressing the introduction of defects into the epitaxial film. This also makes epitaxial growth possible with a surface morphology of excellent flatness.
摘要翻译：在氮化物半导体层生长之前，在非极性面状氮化物衬底（例如m面）上生长氮化物半导体晶体的过程中，在加热到较高温度范围的过程中构成主流的气体，（暴露基板的主氮化物面的气氛）和构成主流的气体直到第一和第二氮化物半导体层的生长完成（衬底的主氮化物面露出的气氛）为止主要是那些不会对氮化物具有蚀刻效果的那些，而在氮化物半导体层的生长开始时不提供Si源。因此，氮原子不会从外延衬底的氮化物表面附近脱附，从而抑制了向外延膜的缺陷的引入。这也使得外延生长可能具有优异的平坦度的表面形态。

2. 发明申请

US20100252835A1 NITRIDE SEMICONDUCTOR AND NITRIDE SEMICONDUCTOR CRYSTAL GROWTH METHOD 有权
标题翻译：氮化物半导体和氮化物半导体晶体生长方法
公开(公告)号：US20100252835A1
公开(公告)日：2010-10-07
申请号：US12744076
申请日：2008-11-20
申请人： Hideyoshi Horie , Kaori Kurihara
发明人： Hideyoshi Horie , Kaori Kurihara
IPC分类号： H01L29/20 , C30B23/06
CPC分类号： H01L21/02634 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/0075
摘要： A base at least one principal plane of which is a nitride is prepared for use in epitaxial growth. The base is placed on a susceptor in an epitaxial growth reactor and heated to a predetermined temperature (step A). The heating is started with inactive, nitrogen gas being supplied into the reactor. Then, active, NH3 gas is supplied. Then, a growth step (step B) of a first nitride semiconductor layer is started without an intervening step of thermally cleaning the principal nitride plane of the base. In step B, the first nitride semiconductor layer is epitaxially grown on a principal nitride plane of a base without supply of an Si source material. Then, a relatively thick, second nitride semiconductor layer is epitaxially grown on the first nitride semiconductor layer by supplying an n-type dopant source material (step C).
摘要翻译：制备其至少一个主平面为氮化物的基底用于外延生长。将基底放置在外延生长反应器中的基座上并加热至预定温度（步骤A）。加热以无效开始，氮气被供给到反应器中。然后，提供活性的NH 3气体。然后，开始第一氮化物半导体层的生长步骤（步骤B），而不需要热清洗基底的主氮化物平面的中间步骤。在步骤B中，第一氮化物半导体层在不提供Si源材料的基底的氮化物主面上外延生长。然后，通过供给n型掺杂剂源材料（步骤C），在第一氮化物半导体层上外延生长相对厚的第二氮化物半导体层。

3. 发明授权

US09048100B2 Nitride semiconductor and nitride semiconductor crystal growth method 有权
标题翻译：氮化物半导体和氮化物半导体晶体生长方法
公开(公告)号：US09048100B2
公开(公告)日：2015-06-02
申请号：US12744076
申请日：2008-11-20
申请人： Hideyoshi Horie , Kaori Kurihara
发明人： Hideyoshi Horie , Kaori Kurihara
IPC分类号： H01L21/20 , H01L21/02 , C30B25/02 , C30B29/40 , H01L33/00
CPC分类号： H01L21/02634 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/0075
摘要： A base at least one principal plane of which is a nitride is prepared for use in epitaxial growth. The base is placed on a susceptor in an epitaxial growth reactor and heated to a predetermined temperature (step A). The heating is started with inactive, nitrogen gas being supplied into the reactor. Then, active, NH3 gas is supplied. Then, a growth step (step B) of a first nitride semiconductor layer is started without an intervening step of thermally cleaning the principal nitride plane of the base. In step B, the first nitride semiconductor layer is epitaxially grown on a principal nitride plane of a base without supply of an Si source material. Then, a relatively thick, second nitride semiconductor layer is epitaxially grown on the first nitride semiconductor layer by supplying an n-type dopant source material (step C).
摘要翻译：制备其至少一个主平面为氮化物的基底用于外延生长。将基底放置在外延生长反应器中的基座上并加热至预定温度（步骤A）。加热以无效开始，氮气被供给到反应器中。然后，提供活性的NH 3气体。然后，开始第一氮化物半导体层的生长步骤（步骤B），而不需要热清洗基体的主要氮化物平面的中间步骤。在步骤B中，第一氮化物半导体层在不提供Si源材料的基底的氮化物主面上外延生长。然后，通过供给n型掺杂剂源材料（步骤C），在第一氮化物半导体层上外延生长相对厚的第二氮化物半导体层。

4. 发明授权

US08624220B2 Nitride semiconductor 有权
标题翻译：氮化物半导体
公开(公告)号：US08624220B2
公开(公告)日：2014-01-07
申请号：US13112564
申请日：2011-05-20
申请人： Hideyoshi Horie , Kaori Kurihara
发明人： Hideyoshi Horie , Kaori Kurihara
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01L33/06 , H01L21/0237 , H01L21/0254 , H01L21/02573 , H01L21/02609 , H01L21/0262 , H01L33/0025 , H01L33/02 , H01L33/16 , H01L33/18 , H01L33/32 , H01L33/325
摘要： To provide a high-quality nitride semiconductor ensuring high emission efficiency of a light-emitting element fabricated. In the present invention, when obtaining a nitride semiconductor by sequentially stacking a one conductivity type nitride semiconductor part, a quantum well active layer structure part, and a another conductivity type nitride semiconductor part opposite the one conductivity type, the crystal is grown on a base having a nonpolar principal nitride surface, the one conductivity type nitride semiconductor part is formed by sequentially stacking a first nitride semiconductor layer and a second nitride semiconductor layer, and the second nitride semiconductor layer has a thickness of 400 nm to 20 μm and has a nonpolar outermost surface. By virtue of selecting the above-described base for crystal growth, an electron and a hole, which are contributing to light emission, can be prevented from spatial separation based on the QCSE effect and efficient radiation is realized. Also, by setting the thickness of the second nitride semiconductor layer to an appropriate range, the nitride semiconductor surface can avoid having extremely severe unevenness.
摘要翻译：提供确保所制造的发光元件的高发射效率的高质量氮化物半导体。在本发明中，当通过依次层叠一个导电型氮化物半导体部件，量子阱活性层结构部分和与一种导电类型相反的另一导电型氮化物半导体部件来获得氮化物半导体时，晶体生长在基底具有非极性主氮化物表面的情况下，通过依次层叠第一氮化物半导体层和第二氮化物半导体层而形成一个导电型氮化物半导体部，并且第二氮化物半导体层的厚度为400nm〜20μm，具有非极性最外面。通过选择上述用于晶体生长的基底，可以防止基于QCSE效应的有助于发光的电子和空穴进行空间分离，并且实现有效的辐射。此外，通过将第二氮化物半导体层的厚度设定在适当的范围，氮化物半导体表面可以避免具有非常严重的不均匀性。

5. 发明申请

US20100244087A1 NITRIDE SEMICONDUCTOR, NITRIDE SEMICONDUCTOR CRYSTAL GROWTH METHOD, AND NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
标题翻译：氮化物半导体，氮化物半导体晶体生长方法和氮化物半导体发光元件
公开(公告)号：US20100244087A1
公开(公告)日：2010-09-30
申请号：US12744163
申请日：2008-11-20
申请人： Hideyoshi Horie , Kaori Kurihara
发明人： Hideyoshi Horie , Kaori Kurihara
IPC分类号： H01L33/30 , H01L29/20 , C30B23/02
CPC分类号： H01L33/0075 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/007 , H01L33/16
摘要： During the growth of a nitride semiconductor crystal on a nonpolar face nitride substrate, such as an m-face, the gas that constitutes the main flow in the process of heating up to a relatively high temperature range, before growth of the nitride semiconductor layer, (the atmosphere to which the main nitride face of the substrate is exposed) and the gas that constitutes the main flow until growth of first and second nitride semiconductor layers is completed (the atmosphere to which the main nitride face of the substrate is exposed) are primarily those that will not have an etching effect on the nitride, while no Si source is supplied at the beginning of growth of the nitride semiconductor layer. Therefore, nitrogen atoms are not desorbed from near the nitride surface of the epitaxial substrate, thus suppressing the introduction of defects into the epitaxial film. This also makes epitaxial growth possible with a surface morphology of excellent flatness.
摘要翻译：在氮化物半导体层生长之前，在非极性面状氮化物衬底（例如m面）上生长氮化物半导体晶体的过程中，在加热到较高温度范围的过程中构成主流的气体，（暴露基板的主氮化物面的气氛）和构成主流的气体直到第一和第二氮化物半导体层的生长完成（衬底的主氮化物面露出的气氛）为止主要是那些不会对氮化物具有蚀刻效果的那些，而在氮化物半导体层的生长开始时不提供Si源。因此，氮原子不会从外延衬底的氮化物表面附近脱附，从而抑制了向外延膜的缺陷的引入。这也使得外延生长可能具有优异的平坦度的表面形态。

6. 发明授权

US07977682B2 Light emitting device 失效
标题翻译：发光装置
公开(公告)号：US07977682B2
公开(公告)日：2011-07-12
申请号：US12278798
申请日：2007-01-26
申请人： Hideyoshi Horie
发明人： Hideyoshi Horie
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20
摘要： Provided is a compound light emitting device which facilitates easy connection of power supply lines, and has a high emission intensity in-plane uniformity. The light emitting device includes a first-conduction-type cladding layer, active layer structure, and second-conduction-type cladding layer each containing a III-V compound semiconductor. The first-conduction-type cladding layer and second-conduction-type cladding layer sandwich the active layer structure. The light emitting device includes a first-conduction-type-side electrode (7) for injecting carriers into the first-conduction-type cladding layer, and a second-conduction-type-side electrode (6) for injecting carriers into the second-conduction-type cladding layer. The first-conduction-type-side electrode (7) has an opening (7p). The second-conduction-type-side electrode (6) has a main-electrode-portion (6-0) partially surrounded by the first-conduction-type-side electrode (7), and extracting portions (6-1, 6-2) for extracting the main-electrode-portion (6-0) outside the first-conduction-type-side electrode (7) though the opening (7p). The main-electrode-portion (6-0) is a part of a constant-width figure. The interval between the outer edge of the main-electrode-portion (6-0) and the inner edge of the first-conduction-type-side electrode (7) is almost constant.
摘要翻译：提供了一种便于连接电源线并具有高发射强度的面内均匀性的复合发光装置。发光器件包括每个含有III-V族化合物半导体的第一导电型包覆层，有源层结构和第二导电型包覆层。第一导电型包层和第二导电型包层夹着有源层结构。发光器件包括用于将载流子注入到第一导电型包层中的第一导电型侧电极（7）和用于将载流子注入第二导电型包层的第二导电型侧电极（6）导电型包覆层。第一导电型侧电极（7）具有开口部（7p）。第二导电型侧电极（6）具有由第一导电型侧电极（7）部分地包围的主电极部（6-0），提取部（6-1,6〜 2），用于通过开口（7p）提取第一导电型侧电极（7）外部的主电极部分（6-0）。主电极部分（6-0）是恒定宽度图的一部分。主电极部分（6-0）的外边缘与第一导电型侧电极（7）的内边缘之间的间隔几乎恒定。

7. 发明申请

US20100304570A1 ETCHING METHOD AND METHOD FOR MANUFACTURING OPTICAL/ELECTRONIC DEVICE USING THE SAME 审中-公开
标题翻译：用于制造使用该光学/电子器件的光学/电子器件的蚀刻方法和方法
公开(公告)号：US20100304570A1
公开(公告)日：2010-12-02
申请号：US12740808
申请日：2008-10-31
申请人： Hideyoshi Horie , Takashi Fukada
发明人： Hideyoshi Horie , Takashi Fukada
IPC分类号： H01L21/3065 , H01L21/306
CPC分类号： H01L21/3081 , H01L21/30621 , H01L21/32134 , H01L33/0062 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a semiconductor etching method whereby a semiconductor layer made of, for example, a Group III-V nitride semiconductor resistant to etching can be etched by a relatively easier process. This etching method comprises forming a metal-fluoride layer 3 at least as a part of an etching mask on the surface of a base structure (1,2); treating the metal-fluoride layer with a liquid; and etching the base structure using the metal-fluoride layer as a mask.
摘要翻译：公开了一种半导体蚀刻方法，由此可以通过相对更容易的工艺来蚀刻由例如耐蚀刻的III-V族氮化物半导体制成的半导体层。该蚀刻方法包括在基底结构（1,2）的表面上至少形成蚀刻掩模的一部分的金属 - 氟化物层3; 用液体处理金属氟化物层; 并使用金属氟化物层作为掩模蚀刻基底结构。

8. 发明授权

US06791181B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US06791181B2
公开(公告)日：2004-09-14
申请号：US09995802
申请日：2001-11-29
申请人： Hideyoshi Horie , Nobuhiro Arai , Naoyuki Komuro
发明人： Hideyoshi Horie , Nobuhiro Arai , Naoyuki Komuro
IPC分类号： H01L2334
CPC分类号： H01L33/642 , H01L24/45 , H01L25/167 , H01L2224/45015 , H01L2224/45144 , H01L2224/49111 , H01L2924/01322 , H01L2924/12042 , H01L2924/12043 , H01S5/02264 , H01S5/02272 , H01S5/02276 , H01S5/024 , H01S5/02415 , H01S5/0425 , H01L2924/20753 , H01L2924/00014 , H01L2924/00
摘要： The present invention discloses a semiconductor light emitting device comprising at least one semiconductor light emitting element of edge-emission type, a first heat sink and a second heat sink, wherein at least a part of an electrode for the first-conduction-type semiconductor of the semiconductor light emitting element is in contact with the first heat sink; at least a part of an electrode for the second-conduction-type semiconductor of the semiconductor light emitting element is in contact with the second heat sink; and the first heat sink and the second heat sink are in contact with each other in a junction overlooking one of the two side planes which do not compose the facets of the cavity in the semiconductor light emitting element. The semiconductor light emitting device of the present invention is characterized by having excellent heat spreading, allowing easy and reproducible assembling even if the components or the element composing the semiconductor light emitting device have dimensional errors, and allowing simple optical coupling with an optical fiber or the like.
摘要翻译：本发明公开了一种半导体发光器件，其包括至少一种边缘发射型半导体发光元件，第一散热器和第二散热器，其中至少一部分用于第一导电型半导体的电极半导体发光元件与第一散热器接触; 用于半导体发光元件的第二导电型半导体的电极的至少一部分与第二散热器接触; 并且第一散热器和第二散热器在俯视不构成半导体发光元件中的空腔的两个侧平面中的一个的接合处彼此接触。本发明的半导体发光器件的特征在于具有优异的散热性，即使构成半导体发光元件的元件或元件具有尺寸误差，并且允许与光纤的简单的光耦合或者喜欢。

9. 发明授权

US08581274B2 Integrated semiconductor light-emitting device and its manufacturing method 失效
标题翻译：集成半导体发光器件及其制造方法
公开(公告)号：US08581274B2
公开(公告)日：2013-11-12
申请号：US12299250
申请日：2007-04-30
申请人： Hideyoshi Horie
发明人： Hideyoshi Horie
IPC分类号： H01L29/205
CPC分类号： H01L27/153 , H01L2224/05567 , H01L2224/05573 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05666 , H01L2224/14 , H01L2924/00014
摘要： An integrated compound semiconductor light-emitting-device capable of emitting light as a large-area plane light source. The light-emitting-device includes plural light-emitting-units formed over a substrate, the light-emitting-units having a compound semiconductor thin-film crystal layer, first and second-conductivity-type-side electrodes, a main light-extraction direction is the side of the substrate, and the first and the second-conductivity-type-side electrodes are formed on the opposite side to the light-extraction direction. The light-emitting-units are electrically separated from each other by a light-emitting-unit separation-trench. An optical coupling layer is formed between the substrate and the first-conductivity-type semiconductor layer. The optical coupling layer is common to the plurality of light-emitting-units, and capable of optical coupling of the plurality of light-emitting-units and distributing a light to the entire light-emitting-device.
摘要翻译：能够将光作为大面积平面光源发光的集成化合物半导体发光装置。发光装置包括在基板上形成的多个发光单元，具有化合物半导体薄膜晶体层的发光单元，第一和第二导电型侧电极，主光提取方向是基板的一侧，并且第一和第二导电型侧电极形成在与光取出方向相反的一侧。发光单元通过发光单元分离沟槽彼此电分离。在基板和第一导电型半导体层之间形成光耦合层。光耦合层对于多个发光单元是共同的，并且能够耦合多个发光单元并将光分配到整个发光装置。

10. 发明申请

US20100320488A1 INTEGRATED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND ITS MANUFACTURING METHOD 失效
标题翻译：集成半导体发光器件及其制造方法
公开(公告)号：US20100320488A1
公开(公告)日：2010-12-23
申请号：US12299250
申请日：2007-04-30
申请人： Hideyoshi Horie
发明人： Hideyoshi Horie
IPC分类号： H01L33/02 , H01L33/10 , H01L33/58 , H01L33/48
CPC分类号： H01L27/153 , H01L2224/05567 , H01L2224/05573 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05666 , H01L2224/14 , H01L2924/00014
摘要： An integrated compound semiconductor light-emitting-device capable of emitting light as a large-area plane light source. The light-emitting-device includes plural light-emitting-units formed over a substrate, the light-emitting-units having a compound semiconductor thin-film crystal layer, first and second-conductivity-type-side electrodes, a main light-extraction direction is the side of the substrate, and the first and the second-conductivity-type-side electrodes are formed on the opposite side to the light-extraction direction. The light-emitting-units are electrically separated from each other by a light-emitting-unit separation-trench. An optical coupling layer is formed between the substrate and the first-conductivity-type semiconductor layer. The optical coupling layer is common to the plurality of light-emitting-units, and capable of optical coupling of the plurality of light-emitting-units and distributing a light to the entire light-emitting-device.
摘要翻译：能够将光作为大面积平面光源发光的集成化合物半导体发光装置。发光装置包括在基板上形成的多个发光单元，具有化合物半导体薄膜晶体层的发光单元，第一和第二导电型侧电极，主光提取方向是基板的一侧，并且第一和第二导电型侧电极形成在与光取出方向相反的一侧。发光单元通过发光单元分离沟槽彼此电分离。在基板和第一导电型半导体层之间形成光耦合层。光耦合层对于多个发光单元是共同的，并且能够耦合多个发光单元并将光分配到整个发光装置。

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