专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08785114B2 Method for manufacturing micro-structure 有权
标题翻译：微结构制造方法
公开(公告)号：US08785114B2
公开(公告)日：2014-07-22
申请号：US13157460
申请日：2011-06-10
申请人： Hideto Kato , Hiroshi Kanbara , Tomoyoshi Furihata , Yoshinori Hirano
发明人： Hideto Kato , Hiroshi Kanbara , Tomoyoshi Furihata , Yoshinori Hirano
IPC分类号： G03F7/30 , G03F7/40 , G03F7/038 , G03F7/023 , G03F7/20
CPC分类号： C09D163/04 , B81C1/00619 , B81C2201/0108 , G03F7/0226 , G03F7/0236 , G03F7/30 , G03F7/40 , G03F7/70466
摘要： A micro-structure is manufactured by patterning a sacrificial film, forming an inorganic material film on the pattern, providing the inorganic material film with an aperture, and etching away the sacrificial film pattern through the aperture to define a space having the contour of the pattern. The patterning stage includes the steps of (A) forming a sacrificial film using a composition comprising a cresol novolac resin and a crosslinker, (B) exposing patternwise the film to first high-energy radiation, (C) developing, and (D) exposing the sacrificial film pattern to second high-energy radiation and heat treating for thereby forming crosslinks within the cresol novolac resin.
摘要翻译：通过图案化牺牲膜来制造微结构，在图案上形成无机材料膜，为无机材料膜提供孔，并通过孔蚀刻掉牺牲膜图案，以限定具有图案轮廓的空间。图案化阶段包括以下步骤：（A）使用包含甲酚酚醛清漆树脂和交联剂的组合物形成牺牲膜，（B）将膜图案化为第一高能辐射，（C）显影，和（D）曝光牺牲膜图案到第二高能量辐射和热处理，从而在甲酚酚醛清漆树脂内形成交联。

2. 发明申请

US20110305990A1 METHOD FOR MANUFACTURING MICRO-STRUCTURE 有权
标题翻译：制造微结构的方法
公开(公告)号：US20110305990A1
公开(公告)日：2011-12-15
申请号：US13157460
申请日：2011-06-10
申请人： Hideto KATO , Hiroshi Kanbara , Tomoyoshi Furihata , Yoshinori Hirano
发明人： Hideto KATO , Hiroshi Kanbara , Tomoyoshi Furihata , Yoshinori Hirano
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： C09D163/04 , B81C1/00619 , B81C2201/0108 , G03F7/0226 , G03F7/0236 , G03F7/30 , G03F7/40 , G03F7/70466
摘要： A micro-structure is manufactured by patterning a sacrificial film, forming an inorganic material film on the pattern, providing the inorganic material film with an aperture, and etching away the sacrificial film pattern through the aperture to define a space having the contour of the pattern. The patterning stage includes the steps of (A) forming a sacrificial film using a composition comprising a cresol novolac resin and a crosslinker, (B) exposing patternwise the film to first high-energy radiation, (C) developing, and (D) exposing the sacrificial film pattern to second high-energy radiation and heat treating for thereby forming crosslinks within the cresol novolac resin.
摘要翻译：通过图案化牺牲膜来制造微结构，在图案上形成无机材料膜，为无机材料膜提供孔，并通过孔蚀刻掉牺牲膜图案，以限定具有图案轮廓的空间。图案化阶段包括以下步骤：（A）使用包含甲酚酚醛清漆树脂和交联剂的组合物形成牺牲膜，（B）将膜图案化为第一高能辐射，（C）显影，和（D）曝光牺牲膜图案到第二高能量辐射和热处理，从而在甲酚酚醛清漆树脂内形成交联。

3. 发明授权

US06437058B2 Polymers and positive resist compositions 有权
标题翻译：聚合物和正性抗蚀剂组合物
公开(公告)号：US06437058B2
公开(公告)日：2002-08-20
申请号：US09777903
申请日：2001-02-07
申请人： Tomoyoshi Furihata , Hideto Kato , Yoshinori Hirano
发明人： Tomoyoshi Furihata , Hideto Kato , Yoshinori Hirano
IPC分类号： C08G830
CPC分类号： C08G8/30 , C08G8/28 , C08L61/06 , C08L61/14
摘要： A polymer in the form of a novolac resin is provided wherein the novolac resin has a weight average molecular weight of 1,000-30,000, some of the hydrogen atoms of hydroxyl groups are replaced by 1,2-naphthoquinonediazidosulfonyl ester groups, and some of the hydrogen atoms of the remaining hydroxyl groups are replaced by substituted acetal groups and/or crosslinked within a molecule or between molecules with crosslinking groups having C—O—C linkages. The polymer is formulated into a positive resist composition having improved uniformity, sensitivity, resolution and pattern profile as well as improved heat resistance, film retention, substrate adhesion and storage stability.
摘要翻译：提供酚醛清漆树脂形式的聚合物，其中酚醛清漆树脂的重均分子量为1,000-3,000，羟基的一些氢原子被1,2-萘醌二叠氮磺酰酯基代替，一些氢剩余羟基的原子被取代的缩醛基团取代和/或在分子内或具有具有COC键的交联基团的分子之间交联。将聚合物配制成具有改进的均匀性，灵敏度，分辨率和图案轮廓以及改善的耐热性，膜保留性，底物粘合性和储存稳定性的正性抗蚀剂组合物。

4. 发明授权

US08048611B2 Polyorganosiloxane, resin composition, and patterning process 失效
标题翻译：聚有机硅氧烷，树脂组合物和图案化工艺
公开(公告)号：US08048611B2
公开(公告)日：2011-11-01
申请号：US12429282
申请日：2009-04-24
申请人： Hideto Kato , Tomoyoshi Furihata , Masahiro Furuya , Yoshinori Hirano
发明人： Hideto Kato , Tomoyoshi Furihata , Masahiro Furuya , Yoshinori Hirano
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： C08G77/38 , C08G77/14 , C08G77/50 , C08L83/10 , C08L83/14 , G03F7/0392 , G03F7/0757 , G03F7/40 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L27/1248 , Y10S430/114 , C08L2666/28
摘要： A polyorganosiloxane compound is modified such that some silicon-bonded hydroxyl groups are substituted with acid labile groups and/or intermolecular or intramolecular crosslinks form with a crosslinking group having a C—O—C linkage. Cured films of a composition comprising the polyorganosiloxane are useful as interlayer dielectric films on TFT substrates.
摘要翻译：改性聚有机硅氧烷化合物，使得一些硅键合的羟基被酸不稳定基团取代，和/或分子间或分子内的交联与具有C-O-C键的交联基团形成。包含聚有机硅氧烷的组合物的固化膜可用作TFT基板上的层间绝缘膜。

5. 发明授权

US06911292B2 Positive resist composition and patterning process 失效
标题翻译：正抗蚀剂组成和图案化工艺
公开(公告)号：US06911292B2
公开(公告)日：2005-06-28
申请号：US10737788
申请日：2003-12-18
申请人： Tomoyoshi Furihata , Hideto Kato
发明人： Tomoyoshi Furihata , Hideto Kato
IPC分类号： G03F7/022 , C08F222/02 , C08G8/28 , G03F7/023 , G03F7/033 , G03F7/40 , H01L21/027 , H05K3/18 , H05K3/24 , G03F7/30
CPC分类号： G03F7/0233 , G03F7/023 , G03F7/40 , H05K3/184 , H05K3/243
摘要： A positive resist composition contains a novolak resin in which 3-27 mol % of the hydroxyl group hydrogens are substituted with 1,2-naphthoquinonediazidosulfonyl ester groups, a methyl vinyl ether-monoalkyl maleate copolymer and optionally, an alkali-soluble cellulose whose glucose ring substituent groups are substituted with organic groups at a specific rate. The composition is useful as a thick film photoresist which is subject to a plating step and offers many advantages including high sensitivity, perpendicular geometry, high resolution, and crack resistance during and after the plating step.
摘要翻译：正型抗蚀剂组合物含有酚醛清漆树脂，其中3〜27摩尔％的羟基氢被1,2-萘醌二叠氮磺酰酯基取代，甲基乙烯基醚 - 单烷基马来酸酯共聚物和任选的碱溶性纤维素，其葡萄糖环取代基以特定速率被有机基团取代。该组合物可用作经受电镀步骤的厚膜光致抗蚀剂，并且在电镀步骤期间和之后提供许多优点，包括高灵敏度，垂直几何形状，高分辨率和抗裂纹性。

6. 发明授权

US06790581B2 Hybrid compound, resist, and patterning process 失效
标题翻译：混合化合物，抗蚀剂和图案化工艺
公开(公告)号：US06790581B2
公开(公告)日：2004-09-14
申请号：US10268761
申请日：2002-10-11
申请人： Hideto Kato , Tomoyoshi Furihata
发明人： Hideto Kato , Tomoyoshi Furihata
IPC分类号： G03F7023
CPC分类号： G03F7/0757 , G03F7/023
摘要： A phenolic resin/silicone resin hybrid compound is obtained by effecting hydrolytic condensation of an organooxysilane in the co-presence of a phenolic resin. The hybrid compound is used as the base polymer in a resist for endowing a resist film with excellent adhesion to a metal substrate.
摘要翻译：通过在酚醛树脂的共存下进行有机氧基硅烷的水解缩合得到酚醛树脂/有机硅树脂杂化化合物。在用于赋予抗蚀剂膜的抗蚀剂中，混合化合物用作与金属基材具有优异粘附性的基础聚合物。

7. 发明授权

US06590010B2 Organosiloxane polymer, photo-curable resin composition, patterning process, and substrate protective coating 有权
公开(公告)号：US06590010B2
公开(公告)日：2003-07-08
申请号：US09949848
申请日：2001-09-12
申请人： Hideto Kato , Takafumi Ueda , Tomoyoshi Furihata
发明人： Hideto Kato , Takafumi Ueda , Tomoyoshi Furihata
IPC分类号： C08G7700
CPC分类号： H01L21/02126 , C08G77/42 , C08G77/52 , C08L83/10 , G03F7/0757 , H01L21/02216 , H01L21/02282 , H01L21/02345 , H01L21/02348 , H01L21/3122 , Y10T428/31663
摘要： By blending novel organosiloxane polymers of the invention with a crosslinking agent and a photoacid generator, photo-curable resin compositions are formulated which can be exposed to radiation in a broad wavelength range and readily form a thin film without oxygen attack. From the compositions, fine patterns having improved dry etching resistance can be formed. Cured coatings of the compositions having improved substrate adhesion, heat resistance, and electrical insulation are suitable as a protective film for electric and electronic parts.

8. 发明授权

US06383944B1 Micropatterning method 失效
标题翻译：微图法
公开(公告)号：US06383944B1
公开(公告)日：2002-05-07
申请号：US09417088
申请日：1999-10-13
申请人： Tomoyoshi Furihata , Hideto Kato , Satoshi Okazaki
发明人： Tomoyoshi Furihata , Hideto Kato , Satoshi Okazaki
IPC分类号： H01L21302
CPC分类号： H01L21/3086
摘要： By forming a lift-off resist pattern on a surface of a first layer, forming a second layer over the first layer surface including the resist pattern, removing the resist pattern to partially expose the first layer surface, and etching the exposed area of the first layer, a micropattern having a high resolution of 0.3 &mgr;m or less and improved dimensional control is obtained.
摘要翻译：通过在第一层的表面上形成剥离抗蚀剂图案，在包括抗蚀剂图案的第一层表面上形成第二层，去除抗蚀剂图案以部分地暴露第一层表面，并蚀刻第一层的暴露区域层，具有0.3μm以下的高分辨率的微型图案，并获得改进的尺寸控制。

9. 发明授权

US07175960B2 Positive resist composition and patterning process 有权
标题翻译：正抗蚀剂组成和图案化工艺
公开(公告)号：US07175960B2
公开(公告)日：2007-02-13
申请号：US10936621
申请日：2004-09-09
申请人： Tomoyoshi Furihata , Hideto Kato
发明人： Tomoyoshi Furihata , Hideto Kato
IPC分类号： G03F7/023 , G03F7/30
CPC分类号： G03F7/0236 , G03F7/022
摘要： A positive resist composition comprising a mixture of an alkali-soluble novolak resin prepared using m-cresol, p-cresol and 2,5-xylenol as starting reactants and a phenolic compound, wherein the hydrogen atoms of all hydroxyl groups are substituted in a proportion of 0.03–0.05 mol per hydrogen atom with 1,2-naphthoquinonediazidosulfonyl ester groups, has uniformity, high sensitivity and high resolution, and is improved in heat resistance, film retention, substrate adhesion, and storage stability.
摘要翻译：一种正性抗蚀剂组合物，其包含使用间甲酚，对甲酚和2,5-二甲苯酚作为起始反应物制备的碱溶性酚醛清漆树脂和酚类化合物的混合物，其中所有羟基的氢原子以一定比例被取代每个氢原子为0.03-0.05mol与1,2-萘醌二叠氮磺酰酯基团，具有均匀性，高灵敏度和高分辨率，并且耐热性，保留膜，基材粘合性和储存稳定性都得到改善。

10. 发明授权

US06773858B2 Positive photoresist composition 有权
公开(公告)号：US06773858B2
公开(公告)日：2004-08-10
申请号：US10635032
申请日：2003-08-06
申请人： Hideto Kato , Kyoko Soga , Tomoyoshi Furihata
发明人： Hideto Kato , Kyoko Soga , Tomoyoshi Furihata
IPC分类号： G03F7023
CPC分类号： G03F7/0233 , G03F7/023
摘要： A photoresist composition comprising a novolac resin in which 3-27 mol % of the hydroxyl group hydrogens are substituted with 1,2-naphthoquinonediazidosulfonyl groups and an alkali-soluble cellulose whose glucose ring substituent groups are substituted with organic groups at a specific rate is used in microprocessing as a positive photoresist and offers many advantages including uniformity, high sensitivity, high resolution, good pattern shape, heat resistance, film retention, substrate adhesion, shelf stability, and high throughput.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式