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1. 发明授权

US4242504A 3"-Acylated macrolide antibiotics 失效
标题翻译： 3“ - 酰化大环内酯抗生素
公开(公告)号：US4242504A
公开(公告)日：1980-12-30
申请号：US37859
申请日：1979-05-10
申请人： Hideo Sakakibara , Osamu Okegawa , Toshiyuki Watanabe , Tatsuro Fujiwara , Susumu Watanabe , Satoshi Omura , Tetsuo Matsuda
发明人： Hideo Sakakibara , Osamu Okegawa , Toshiyuki Watanabe , Tatsuro Fujiwara , Susumu Watanabe , Satoshi Omura , Tetsuo Matsuda
IPC分类号： C07H17/08
CPC分类号： C07H17/08
摘要： 3"-acylated macrolide antibiotics of the formula ##STR1## wherein R.sub.1 is hydrogen or C.sub.2-3 alkanoyl, R.sub.2 is hydrogen or C.sub.2-4 alkanoyl, at least one of R.sub.1 and R.sub.2 being hydrogen, and one of R' and R" being R.sub.3 and the other R.sub.4, R.sub.3 being C.sub.2-6 alkanoyl and R.sub.4 being C.sub.2-5 alkanoyl, or a pharmaceutically acceptable salt thereof.
摘要翻译： 3“ - 酰化大环内酯类抗生素，其中R1是氢或C2-3烷酰基，R2是氢或C2-4烷酰基，R1和R2中的至少一个是氢，R' 和R“为R3且另一个R4，R3为C2-6烷酰基，R4为C2-5烷酰基，或其药学上可接受的盐。

2. 发明授权

US4268665A Derivatives of antibiotic tylosin 失效
标题翻译：抗生素泰乐菌素衍生物
公开(公告)号：US4268665A
公开(公告)日：1981-05-19
申请号：US075661
申请日：1979-09-14
申请人： Hideo Sakakibara , Tatsuro Fujiwara , Osamu Okegawa , Toshiyuki Watanabe , Susumu Watanabe , Tetsuo Matsuda
发明人： Hideo Sakakibara , Tatsuro Fujiwara , Osamu Okegawa , Toshiyuki Watanabe , Susumu Watanabe , Tetsuo Matsuda
IPC分类号： C07H17/08 , A61K31/71
CPC分类号： C07H17/08
摘要： Derivatives of antibiotic tylosin of the formula ##STR1## wherein R.sub.1 is hydrogen or lower alkanoyl, A.sub.1 and A.sub.2 are groups of which one is R.sub.2 and the other is R.sub.3, and R.sub.2 and R.sub.3 are C.sub.2-6 alkanoyl, or a physiologically acceptable salt thereof, have enhanced antibacterial activity against macrolide antibiotic-resistant strains.
摘要翻译：其中R 1为氢或低级烷酰基，A1和A2为其中一个为R 2，另一个为R 3的基团，R 2和R 3为C 2-6烷酰基的基团的抗生素泰乐菌素衍生物，或其生理上可接受的盐对大环内酯类抗生素抗性菌株具有增强的抗菌活性。

3. 发明授权

US4345069A Deformyltylosin derivatives 失效
标题翻译：甲状腺素衍生物
公开(公告)号：US4345069A
公开(公告)日：1982-08-17
申请号：US184375
申请日：1980-09-05
申请人： Hideo Sakakibara , Tatsuro Fujiwara , Osamu Okegawa , Eiichi Honda , Susumu Watanabe , Tetsuo Matsuda
发明人： Hideo Sakakibara , Tatsuro Fujiwara , Osamu Okegawa , Eiichi Honda , Susumu Watanabe , Tetsuo Matsuda
IPC分类号： C07H17/08
CPC分类号： C07H17/08
摘要： Deformyltylosin derivatives of the formula ##STR1## wherein A is ##STR2## --CH.dbd.CH-- or --CH.sub.2 --CH.sub.2 --, R.sub.1 is hydrogen, lower alkanoyl or aryl-lower alkanoyl, X.sub.1 and X.sub.2 are hydrogen or are connected to form a valence bond, Y.sub.1 and Y.sub.2 are hydrogen or are connected to form a valence bond, Q.sub.1 is hydrogen or methyl, Q.sub.2 is hydrogen or ##STR3## R.sub.2 is hydrogen or lower alkanoyl, R is hydrogen or ##STR4## R.sub.3 is hydrogen or C.sub.2-5 alkanoyl, and R.sub.4 is hydrogen or C.sub.2-6 alkanoyl, and when R.sub.3 is not hydrogen, then R.sub.4 is not hydrogen, or a pharmaceutically acceptable salt thereof, have strong antibacterial activities as compared to the known antibiotic tylosin, and also have enhanced antibacterial activities against all macrolide antibiotic-resistant strains such as A, B and C group strains, and have higher blood levels as compared with tylosin.
摘要翻译：其中A为-CH = CH-或-CH 2 -CH 2 - ，R 1为氢，低级烷酰基或芳基 - 低级烷酰基，X 1和X 2为氢或连接形成价数的式键，Y1和Y2是氢或连接形成价键，Q1是氢或甲基，Q2是氢或R2是氢或低级烷酰基，R是氢或者R3是氢或C2-5 烷酰基，R4为氢或C2-6烷酰基，当R3不为氢时，R4为氢，或其药学上可接受的盐与已知抗生素泰乐菌素相比具有较强的抗菌活性，并且还具有增强的抗菌活性对抗所有大环内酯抗生素抗性菌株如A，B和C组菌株，并且与泰乐菌素相比具有较高的血液水平。

4. 发明授权

US3988309A EEL calcitonin 失效
标题翻译： EEL降钙素
公开(公告)号：US3988309A
公开(公告)日：1976-10-26
申请号：US536889
申请日：1974-12-17
申请人： Tetsuo Matsuda , Susumu Watanabe , Shunpei Sakakibara , Eisuke Munekata , Tadanori Morikawa , Masaru Otani , Toshiharu Noda , Hirose Yamauchi , Tosio Meguro , Shuichi Kitazawa
发明人： Tetsuo Matsuda , Susumu Watanabe , Shunpei Sakakibara , Eisuke Munekata , Tadanori Morikawa , Masaru Otani , Toshiharu Noda , Hirose Yamauchi , Tosio Meguro , Shuichi Kitazawa
IPC分类号： A61K38/00 , C07K14/585 , C07C103/52 , C07G7/00
CPC分类号： C07K14/585 , A61K38/00 , Y10S514/808 , Y10S530/857
摘要： A polypeptide having calcitonin activity of the formula ##EQU1## and the salts thereof with pharmaceutically acceptable acids.
摘要翻译：具有式H-Cys-Ser-Asn-Leu-Ser-Thr-Cys-Val -Leu-Gly-Lys-Leu-Ser-Gln-Glu-Leu-His-Lys-Leu-Gln- Thr-Tyr-Pro-Arg-Thr-Asp-Val-Gly-Ala-Gly-Thr-Pro-NH 2及其盐与药学上可接受的酸。

5. 发明申请

US20120112308A1 SEMICONDUCTOR DEVICE, SEMICONDUCTOR GROUP MEMBER AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：半导体器件，半导体器件组件和半导体器件制造方法
公开(公告)号：US20120112308A1
公开(公告)日：2012-05-10
申请号：US13238617
申请日：2011-09-21
申请人： Tetsuo Matsuda , Tomomi Imamura
发明人： Tetsuo Matsuda , Tomomi Imamura
IPC分类号： H01L25/00 , H01L21/66 , H01L21/78
CPC分类号： H01L29/7813 , H01L22/14 , H01L23/3107 , H01L24/05 , H01L24/06 , H01L24/48 , H01L24/49 , H01L25/072 , H01L29/41741 , H01L29/42372 , H01L29/42376 , H01L29/7811 , H01L2224/04034 , H01L2224/04042 , H01L2224/05552 , H01L2224/05554 , H01L2224/0603 , H01L2224/06051 , H01L2224/0615 , H01L2224/371 , H01L2224/40245 , H01L2224/40499 , H01L2224/41113 , H01L2224/4117 , H01L2224/48247 , H01L2224/49113 , H01L2224/4917 , H01L2224/94 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/014 , H01L2924/10253 , H01L2924/12032 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2224/03 , H01L2924/00 , H01L2924/00012 , H01L2224/45099
摘要： According to one embodiment, a semiconductor device includes a device portion, a first electrode portion, a second electrode portion and a protruding portion. The device portion is provided on a substrate. The first electrode portion is provided on the device portion and is electrically contacted with the device portion. The second electrode portion is provided on the device portion separated from the first electrode portion, and electrically contacted with the device portion. The protruding portion is provided on the device portion and protrudes outward from a peripheral portion of the first electrode portion and the second electrode portion.
摘要翻译：根据一个实施例，半导体器件包括器件部分，第一电极部分，第二电极部分和突出部分。器件部分设置在衬底上。第一电极部分设置在器件部分上并与器件部分电接触。第二电极部分设置在与第一电极部分分离的器件部分上，并与器件部分电接触。突出部分设置在装置部分上并从第一电极部分和第二电极部分的周边部分向外突出。

6. 发明授权

US07575664B2 Plating method 失效
标题翻译：电镀方法
公开(公告)号：US07575664B2
公开(公告)日：2009-08-18
申请号：US11135328
申请日：2005-05-24
申请人： Tetsuo Matsuda , Hisashi Kaneko , Katsuya Okumura
发明人： Tetsuo Matsuda , Hisashi Kaneko , Katsuya Okumura
IPC分类号： C25D21/12
CPC分类号： C25D5/16 , C25D5/02 , C25D5/06 , C25D7/123 , C25D17/001 , C25D17/12 , H01L21/2885 , H01L21/76877 , H05K3/423
摘要： A cathode potential is applied to a conductive layer formed on a substrate having a depression pattern. A plating solution in electrical contact with an anode is supplied to the conductive layer to form a plating film on the conductive layer. At this time, the plating solution is supplied by causing an impregnated member containing the plating solution to face the conductive layer. Since the plating solution stays in the depression, a larger amount of plating solution is supplied than on the upper surface of the substrate, and the plating rate of the plating film in the depression increases. Consequently, the plating film can be preferentially formed in the depression such as a groove or hole.
摘要翻译：对形成在具有凹陷图案的基板上的导电层施加阴极电位。将与阳极电接触的电镀溶液供给到导电层，以在导电层上形成镀膜。此时，通过使包含电镀液的浸渍部件面对导电层而供给电镀液。由于电镀溶液滞留在凹陷中，所以与基板的上表面相比，供给电镀液的量较多，因此抑制了镀膜的镀覆速度。因此，可以在诸如凹槽或孔的凹陷中优先地形成镀膜。

7. 发明申请

US20080251385A1 PLATING APPARATUS 审中-公开
标题翻译：电镀设备
公开(公告)号：US20080251385A1
公开(公告)日：2008-10-16
申请号：US12116562
申请日：2008-05-07
申请人： Junji Kunisawa , Mitsuko Odagaki , Natsuki Makino , Koji Mishima , Kenji Nakamura , Hiroaki Inoue , Norio Kimura , Tetsuo Matsuda , Hisashi Kaneko , Nobuo Hayasaka , Katsuya Okumura , Manabu Tsujimura , Toshiyuki Morita
发明人： Junji Kunisawa , Mitsuko Odagaki , Natsuki Makino , Koji Mishima , Kenji Nakamura , Hiroaki Inoue , Norio Kimura , Tetsuo Matsuda , Hisashi Kaneko , Nobuo Hayasaka , Katsuya Okumura , Manabu Tsujimura , Toshiyuki Morita
IPC分类号： C25D21/12
CPC分类号： H01L21/6719 , C25D7/123 , C25D17/001 , C25D17/12 , C25D17/14 , H01L21/2885 , H01L21/67046 , H01L21/67051 , H01L21/6708 , H01L21/6715 , H01L21/6723 , H01L21/76877 , H01L21/76879 , H01L2924/0002 , H05K3/423 , H01L2924/00
摘要： A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portion 36 horizontally holding and rotating a substrate with its surface to be plated facing upward. A seal material 90 contacts a peripheral edge portion of the surface, sealing the portion in a watertight manner. A cathode electrode 88 passes an electric current upon contact with the substrate. A cathode portion 38 rotates integrally with the substrate holding portion 36. An electrode arm portion 30 is above the cathode portion 38 and movable horizontally and vertically and has an anode 98 face-down. Plating liquid is poured into a space between the surface to be plated and the anode 98 brought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.
摘要翻译：用于衬底的电镀方法和装置将诸如铜的金属填充到形成在半导体衬底中的精细互连图案中。该装置具有基板保持部分36，其水平地保持并旋转基板，其表面被面向上。密封材料90接触表面的周缘部分，以水密的方式密封该部分。阴极电极88在与基板接触时通过电流。阴极部38与基板保持部36一体旋转。电极臂部分30在阴极部分38的上方并且可水平和垂直地移动，并且阳极98面向下。将电镀液注入被镀表面与接近待镀表面的阳极98之间的空间中。因此，电镀处理和附带的处理可以通过单个单元进行。

8. 发明授权

US06998342B2 Electronic device manufacturing method 失效
公开(公告)号：US06998342B2
公开(公告)日：2006-02-14
申请号：US10835319
申请日：2004-04-30
申请人： Tetsuo Matsuda , Hiroshi Toyoda , Hisashi Kaneko
发明人： Tetsuo Matsuda , Hiroshi Toyoda , Hisashi Kaneko
IPC分类号： H01L21/44
CPC分类号： H01L21/76874 , C23C18/165 , C23C18/1651 , C23C18/1653 , C23C18/405 , C23C18/54 , C23C28/00 , C25D7/123 , H01L21/2855 , H01L21/288 , H01L21/76867 , H01L21/76868 , H01L21/76873 , H01L21/76877 , H01L2924/0002 , H01L2924/00
摘要： An electronic device manufacturing method comprises forming an insulating film above a substrate, forming a to-be-filled region which includes at least one of an interconnection groove and a hole in the insulating film, forming a first conductive film containing a catalyst metal which accelerates electroless plating, so as to line an internal surface of the to-be-filled region, forming a second conductive film on the first conductive film by the electroless plating, so as to line the internal surface of the to-be-filled region via the first conductive film, and forming a third conductive film on the second conductive film by electroplating, so as to fill the to-be-filled region via the first conductive film and the second conductive film.

9. 发明授权

US06632335B2 Plating apparatus 有权
标题翻译：电镀装置
公开(公告)号：US06632335B2
公开(公告)日：2003-10-14
申请号：US09742110
申请日：2000-12-22
申请人： Junji Kunisawa , Mitsuko Odagaki , Natsuki Makino , Koji Mishima , Kenji Nakamura , Hiroaki Inoue , Norio Kimura , Tetsuo Matsuda , Hisashi Kaneko , Nobuo Hayasaka , Katsuya Okumura , Manabu Tsujimura , Toshiyuki Morita
发明人： Junji Kunisawa , Mitsuko Odagaki , Natsuki Makino , Koji Mishima , Kenji Nakamura , Hiroaki Inoue , Norio Kimura , Tetsuo Matsuda , Hisashi Kaneko , Nobuo Hayasaka , Katsuya Okumura , Manabu Tsujimura , Toshiyuki Morita
IPC分类号： C25D2112
CPC分类号： H01L21/6719 , C25D7/123 , C25D17/001 , C25D17/12 , C25D17/14 , H01L21/2885 , H01L21/67046 , H01L21/67051 , H01L21/6708 , H01L21/6715 , H01L21/6723 , H01L21/76877 , H01L21/76879 , H01L2924/0002 , H05K3/423 , H01L2924/00
摘要： A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portion 36 horizontally holding and rotating a substrate with its surface to be plated facing upward. A seal material 90 contacts a peripheral edge portion of the surface, sealing the portion in a watertight manner. A cathode electrode 88 passes an electric current upon contact with the substrate. A cathode portion 38 rotates integrally with the substrate holding portion 36. An electrode arm portion 30 is above the cathode portion 38 and movable horizontally and vertically and has an anode 98 face-down. Plating liquid is poured into a space between the surface to be plated and the anode 98 brought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.
摘要翻译：用于衬底的电镀方法和装置将诸如铜的金属填充到形成在半导体衬底中的精细互连图案中。该装置具有将待镀表面向上水平保持并旋转的衬底的衬底保持部分 36 。密封材料 90 接触表面的外围边缘部分，以水密的方式密封该部分。当与基板接触时，阴极电极 88 通过电流。阴极部分 38 与衬底保持部分 36 整体旋转。电极臂部分 30 在阴极部分 38 之上，水平和垂直移动并具有阳极 PDAT> 98 面朝下。将电镀液倒入要被镀表面和靠近待镀表面的阳极 98 之间的空间中。因此，电镀处理和附带的处理可以通过单个单元执行

10. 发明授权

US06579785B2 Method of making multi-level wiring in a semiconductor device 有权
标题翻译：在半导体器件中制造多层布线的方法
公开(公告)号：US06579785B2
公开(公告)日：2003-06-17
申请号：US09767724
申请日：2001-01-24
申请人： Hiroshi Toyoda , Tetsuo Matsuda , Hisashi Kaneko , Hideaki Hirabayashi
发明人： Hiroshi Toyoda , Tetsuo Matsuda , Hisashi Kaneko , Hideaki Hirabayashi
IPC分类号： H01L2144
CPC分类号： H01L21/76849 , H01L21/76819 , H01L21/7684 , H01L21/76843 , H01L21/76855 , H01L21/76873 , H01L21/76877 , H01L23/53238 , H01L23/53242 , H01L23/53252 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device, which comprises the steps of forming an intermediate layer on an insulating layer, forming a groove in the intermediate layer and the insulating layer, forming a first barrier layer on the intermediate layer, depositing a wiring layer on the first barrier layer to thereby fill the groove with the wiring layer, performing a flattening treatment of the wiring layer, removing a surface portion of the wiring to thereby permit the surface of the wiring to be recessed lower than a surface of the insulating layer, thus forming a recessed portion, forming a second barrier layer on the intermediate layer and on an inner wall of the recessed portion, performing a flattening treatment of the second barrier layer, thereby, and selectively removing the intermediate layer, exposing the insulating layer.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：在绝缘层上形成中间层，在中间层中形成沟槽和绝缘层，在中间层上形成第一阻挡层，在其上沉积布线层第一阻挡层，从而使布线层填充沟槽，对布线层进行平坦化处理，去除布线的表面部分，从而允许布线的表面比绝缘层的表面凹陷，因此形成凹部，在所述中间层和所述凹部的内壁上形成第二阻挡层，对所述第二阻挡层进行平坦化处理，从而选择性地除去所述中间层，使所述绝缘层露出。

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