专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06579785B2 Method of making multi-level wiring in a semiconductor device 有权
标题翻译：在半导体器件中制造多层布线的方法
公开(公告)号：US06579785B2
公开(公告)日：2003-06-17
申请号：US09767724
申请日：2001-01-24
申请人： Hiroshi Toyoda , Tetsuo Matsuda , Hisashi Kaneko , Hideaki Hirabayashi
发明人： Hiroshi Toyoda , Tetsuo Matsuda , Hisashi Kaneko , Hideaki Hirabayashi
IPC分类号： H01L2144
CPC分类号： H01L21/76849 , H01L21/76819 , H01L21/7684 , H01L21/76843 , H01L21/76855 , H01L21/76873 , H01L21/76877 , H01L23/53238 , H01L23/53242 , H01L23/53252 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device, which comprises the steps of forming an intermediate layer on an insulating layer, forming a groove in the intermediate layer and the insulating layer, forming a first barrier layer on the intermediate layer, depositing a wiring layer on the first barrier layer to thereby fill the groove with the wiring layer, performing a flattening treatment of the wiring layer, removing a surface portion of the wiring to thereby permit the surface of the wiring to be recessed lower than a surface of the insulating layer, thus forming a recessed portion, forming a second barrier layer on the intermediate layer and on an inner wall of the recessed portion, performing a flattening treatment of the second barrier layer, thereby, and selectively removing the intermediate layer, exposing the insulating layer.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：在绝缘层上形成中间层，在中间层中形成沟槽和绝缘层，在中间层上形成第一阻挡层，在其上沉积布线层第一阻挡层，从而使布线层填充沟槽，对布线层进行平坦化处理，去除布线的表面部分，从而允许布线的表面比绝缘层的表面凹陷，因此形成凹部，在所述中间层和所述凹部的内壁上形成第二阻挡层，对所述第二阻挡层进行平坦化处理，从而选择性地除去所述中间层，使所述绝缘层露出。

2. 发明授权

US5770095A Polishing agent and polishing method using the same 失效
标题翻译：抛光剂和抛光方法使用相同
公开(公告)号：US5770095A
公开(公告)日：1998-06-23
申请号：US500753
申请日：1995-07-11
申请人： Yasutaka Sasaki , Nobuo Hayasaka , Hisashi Kaneko , Hideaki Hirabayashi , Masatoshi Higuchi
发明人： Yasutaka Sasaki , Nobuo Hayasaka , Hisashi Kaneko , Hideaki Hirabayashi , Masatoshi Higuchi
IPC分类号： C09K13/06 , C23F1/18 , C23F3/00 , H01L21/304 , H01L21/3205 , H01L21/321 , H01L21/768 , H01L21/00 , B44C1/22 , C23F1/00
CPC分类号： C23F3/00 , H01L21/3212 , H01L21/7684
摘要： The present invention provides a polishing method including the steps of forming a film made of material containing a metal as a main component over a substrate having depressed portions on a surface thereof so as to fill the depressed portions with the film, and polishing the film by a chemical mechanical polishing method using a polishing agent containing a chemical agent responsible for forming a protection film on a surface of the film by reacting with the material containing a metal as a main component, thereby forming a conductive film in the depressed portions. The present invention also provides a polishing agent, which is used in forming a film made of material containing a metal as a main component in depressed portions of a substrate having depressed portions on a surface thereof by using a chemical mechanical polishing method, including a chemical agent responsible for forming a protection film on the surface of a substrate to be polished by reacting with the material containing a metal as a main component.
摘要翻译：本发明提供了一种抛光方法，包括以下步骤：在其表面上具有凹陷部分的基底上形成由含有金属作为主要成分的材料制成的膜，以便用该膜填充凹陷部分，并且通过使用包含负责通过与包含金属作为主要成分的材料在膜的表面上形成保护膜的化学试剂的抛光剂的化学机械抛光方法，从而在凹陷部分中形成导电膜。本发明还提供了一种抛光剂，其用于通过使用化学机械抛光方法在其表面上形成具有凹陷部的基板的凹部中的以金属为主要成分的材料制成的膜，所述化学机械抛光方法包括化学负责通过与含有金属作为主要成分的材料反应而在要抛光的基材的表面上形成保护膜的试剂。

3. 发明申请

US20130008868A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工方法和基板加工装置
公开(公告)号：US20130008868A1
公开(公告)日：2013-01-10
申请号：US13541167
申请日：2012-07-03
申请人： Yoshihiro UOZUMI , Shinsuke Kimura , Yoshihiro Ogawa , Hiroyasu Iimori , Tatsuhiko Koide , Hideaki Hirabayashi , Yuji Nagashima
发明人： Yoshihiro UOZUMI , Shinsuke Kimura , Yoshihiro Ogawa , Hiroyasu Iimori , Tatsuhiko Koide , Hideaki Hirabayashi , Yuji Nagashima
IPC分类号： B08B3/00 , B05C11/00 , B08B7/00 , B44C1/22
CPC分类号： H01L21/67075 , G03F7/162 , G03F7/405 , H01L21/67017 , H01L21/67028 , H01L21/67051 , H01L21/67098 , H01L21/6715 , H01L21/67739 , H01L21/68
摘要： According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.
摘要翻译：根据一个实施例，公开了一种基板处理方法。该方法可以包括用第一液体处理底物。衬底具有形成在衬底的主表面上的结构体。该方法可以包括通过使第二液体与由第一液体润湿的基底接触而形成支撑结构体的支撑构件，并且通过执行至少一个将第二液体的至少一部分变为固体，第二液体反应，减少包含在第二液体中的溶剂的量，并使溶解在第二液体中的物质的至少一部分被分离。该方法可以包括通过将支撑构件的至少一部分从固相改变为气相而不通过液相来移除支撑构件。

4. 发明申请

US20120242002A1 TEMPLATE, SURFACE PROCESSING METHOD OF TEMPLATE, SURFACE PROCESSING APPARATUS OF TEMPLATE, AND PATTERN FORMATION METHOD 审中-公开
标题翻译：模板，模板表面处理方法，模板表面处理装置和图案形成方法
公开(公告)号：US20120242002A1
公开(公告)日：2012-09-27
申请号：US13412019
申请日：2012-03-05
申请人： Masako KOBAYASHI , Hideaki Hirabayashi , Yoshihisa Kawamura , Momoka Higa
发明人： Masako KOBAYASHI , Hideaki Hirabayashi , Yoshihisa Kawamura , Momoka Higa
IPC分类号： B29C59/02
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A template includes a transfer surface having an unevenness pattern. The template is configured to form a configuration in a surface of a resin to reflect the unevenness pattern. The resin is formed by filling a photocurable resin liquid into a recess of the unevenness pattern in a state prior to using light to cure the photocurable resin liquid and by using the light to cure the photocurable resin liquid. The template includes a base member and a surface layer. The base member includes a major surface having an unevenness. The surface layer covers the unevenness of the base member, and is used to form the unevenness pattern to reflect a configuration of the unevenness. A contact angle between the surface layer and the photocurable resin liquid in the state prior to using the light to cure the photocurable resin liquid is not more than 30 degrees.
摘要翻译：模板包括具有凹凸图案的转印面。模板被配置为在树脂的表面中形成反射不平坦图案的构造。在使用光固化光固化性树脂液体之前的状态下，通过使光固化光固化树脂液体的状态，将光固化树脂液体填充到凹凸图案的凹部中而形成树脂。模板包括基底构件和表面层。基部构件包括具有凹凸的主表面。表面层覆盖基体的凹凸，用于形成凹凸图案，以反映凹凸的形状。在使用光固化光固化性树脂液体之前的状态下，表面层与光固化性树脂液体之间的接触角不大于30度。

5. 发明申请

US20120067847A1 APPARATUS AND METHOD OF PROCESSING SUBSTRATE 审中-公开
标题翻译：装置和处理基板的方法
公开(公告)号：US20120067847A1
公开(公告)日：2012-03-22
申请号：US13223555
申请日：2011-09-01
申请人： Naoaki Sakurai , Hideaki Hirabayashi
发明人： Naoaki Sakurai , Hideaki Hirabayashi
IPC分类号： C23F1/00 , C23F1/08
CPC分类号： H01L21/67248 , H01L21/31111 , H01L21/6708 , H01L21/67109
摘要： According to one embodiment, an apparatus of processing a substrate includes a treatment chamber, a holder, a feed device, and a temperature control device. The holder is provided in the treatment chamber and is configured to rotatably hold the substrate. The feed device includes a nozzle configured to eject an etching solution to a surface of the substrate held by the holder. The temperature control device includes first and second devices, and a controller. The first device is configured to heat and/or cool an atmosphere inside the treatment chamber. The second device is configured to heat and/or cool the etching solution. The controller is configured to control operation of the first and second devices such that a temperature of the atmosphere is higher than that of the etching solution in the nozzle and that difference between the temperature of the atmosphere and that of the etching solution is maintained constant.
摘要翻译：根据一个实施例，处理基板的装置包括处理室，保持器，进给装置和温度控制装置。保持器设置在处理室中并且构造成可旋转地保持基板。进料装置包括喷嘴，该喷嘴构造成将蚀刻溶液喷射到由保持器保持的基板的表面上。温度控制装置包括第一和第二装置以及控制器。第一装置被配置为加热和/或冷却处理室内的气氛。第二装置被配置为加热和/或冷却蚀刻溶液。控制器被配置为控制第一和第二装置的操作，使得气氛的温度高于喷嘴中的蚀刻溶液的温度，并且气氛的温度与蚀刻溶液的温度之间的差保持恒定。

6. 发明申请

US20110143549A1 ETCHING METHOD, METHOD FOR MANUFACTURING MICROSTRUCTURE, AND ETCHING APPARATUS 审中-公开
标题翻译：蚀刻方法，制造微结构的方法和蚀刻装置
公开(公告)号：US20110143549A1
公开(公告)日：2011-06-16
申请号：US12963187
申请日：2010-12-08
申请人： Makiko TANGE , Naoya Hayamizu , Nobuyoshi Sato , Yuri Yonekura , Hideaki Hirabayashi , Yoshiaki Kurokawa , Nobuo Kobayashi , Masaaki Kato , Hiroki Domon
发明人： Makiko TANGE , Naoya Hayamizu , Nobuyoshi Sato , Yuri Yonekura , Hideaki Hirabayashi , Yoshiaki Kurokawa , Nobuo Kobayashi , Masaaki Kato , Hiroki Domon
IPC分类号： H01L21/302 , B44C1/22 , C23F1/00 , H01L21/02
CPC分类号： C25B1/22 , C25B9/08 , G03F1/80 , G03F7/423 , H01L21/02057 , H01L21/31133 , H01L21/6708
摘要： In one embodiment, an etching method is disclosed. The method can include producing an oxidizing substance by electrolyzing a sulfuric acid solution, and producing an etching solution having a prescribed oxidizing species concentration by controlling a produced amount of the produced oxidizing substance. The method can include supplying the produced etching solution to a surface of a workpiece.
摘要翻译：在一个实施例中，公开了蚀刻方法。该方法可以包括通过电解硫酸溶液来生产氧化物质，并通过控制生成的氧化物质的产生量来制备具有规定的氧化物质浓度的蚀刻溶液。该方法可以包括将所产生的蚀刻溶液供应到工件的表面。

7. 发明授权

US09475213B2 Method for reproducing template and reproducing apparatus 有权
标题翻译：用于再现模板和再现装置的方法
公开(公告)号：US09475213B2
公开(公告)日：2016-10-25
申请号：US13606199
申请日：2012-09-07
申请人： Masako Kobayashi , Hideaki Hirabayashi
发明人： Masako Kobayashi , Hideaki Hirabayashi
IPC分类号： C03C15/00 , B29C33/38 , B29C33/58
CPC分类号： B29C33/3842 , B29C33/58
摘要： An aspect of the present disclosure, there is provided a method for reproducing a template. The template includes a transfer surface and a release layer. The transfer surface has a concavoconvex pattern. The release layer includes an inorganic functional group and an organic functional group, both being bonded to the transfer surface. The method for reproducing the template includes the following two steps: removing the organic functional group by oxidizing and decomposing the organic functional group included in the release layer; and removing the inorganic functional group; and forming the release layer by coupling a silane coupling agent with the transfer surface.
摘要翻译：本公开的一个方面，提供了一种用于再现模板的方法。模板包括转印表面和释放层。转印表面具有凹凸图案。剥离层包括无机官能团和有机官能团，两者都结合到转移表面。再现模板的方法包括以下两个步骤：通过氧化和分解包含在剥离层中的有机官能团来除去有机官能团; 并除去无机官能团; 以及通过将硅烷偶联剂与转移表面偶联形成脱模层。

8. 发明申请

US20130147089A1 TRANSPARENT CONDUCTIVE MATERIAL, DISPERSION LIQUID, TRANSPARENT CONDUCTIVE FILM, AND METHODS FOR MANUFACTURING SAME 审中-公开
标题翻译：透明导电材料，分散液，透明导电膜及其制造方法
公开(公告)号：US20130147089A1
公开(公告)日：2013-06-13
申请号：US13710608
申请日：2012-12-11
申请人： Hirotoshi MURAYAMA , Hideaki Hirabayashi , Masashi Yamage , Tsuyoshi Noma , Masao Kon
发明人： Hirotoshi MURAYAMA , Hideaki Hirabayashi , Masashi Yamage , Tsuyoshi Noma , Masao Kon
IPC分类号： H01B1/12
CPC分类号： H01B1/12 , B82Y30/00 , H01B1/04 , Y10S977/734 , Y10S977/896
摘要： According to one embodiment, a transparent conductive material is used for a transparent conductive film. The transparent conductive material includes nanographene having a polar group at a surface of the nanographene.
摘要翻译：根据一个实施例，透明导电材料用于透明导电膜。透明导电材料包括在纳米线性荧光体的表面具有极性基团的纳米线烯。

9. 发明授权

US07291188B2 Polishing cloth and method of manufacturing semiconductor device 有权
标题翻译：抛光布和半导体器件的制造方法
公开(公告)号：US07291188B2
公开(公告)日：2007-11-06
申请号：US10994229
申请日：2004-11-23
申请人： Hideaki Hirabayashi , Naoaki Sakurai , Akiko Saito , Koji Sato , Tomiho Yamada
发明人： Hideaki Hirabayashi , Naoaki Sakurai , Akiko Saito , Koji Sato , Tomiho Yamada
IPC分类号： C09K3/14 , B24D11/00
CPC分类号： B24B37/24
摘要： A polishing cloth used in the chemical mechanical polishing treatment comprises a molded body of (meth)acrylic copolymer having an acid value of 10 to 100 mg KOH/g and a hydroxyl group value of 50 to 150 mg KOH/g.
摘要翻译：用于化学机械抛光处理的抛光布包括酸值为10至100mg KOH / g，羟基值为50至150mg KOH / g的（甲基）丙烯酸共聚物的成型体。

10. 发明申请

US20060276113A1 Polishing cloth, polishing apparatus and method of manufacturing semiconductor devices 审中-公开
公开(公告)号：US20060276113A1
公开(公告)日：2006-12-07
申请号：US11505464
申请日：2006-08-17
申请人： Hideaki Hirabayashi , Akiko Saito , Naoaki Sakurai , Yoshihiro Oshibe , Masahiro Ishidoya
发明人： Hideaki Hirabayashi , Akiko Saito , Naoaki Sakurai , Yoshihiro Oshibe , Masahiro Ishidoya
IPC分类号： B24B29/00
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/24 , B24B49/16 , B24D3/28 , B24D3/344 , B24D11/001
摘要： There is disclosed a polishing cloth having an abrasive layer containing a polymer material which is a hydrolyzable with an aqueous medium and being capable of exhibiting a stable polishing performance for a relatively long period of time without necessitating a dressing treatment.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式