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    • 1. 发明授权
    • Electron emitting device and method of manufacturing the same
    • 电子发射元件及其制造方法
    • US06445114B1
    • 2002-09-03
    • US09402899
    • 1999-12-10
    • Hideo KurokawaTetsuya ShiratoriToshifumi SatoMasahiro DeguchiMakoto Kitabatake
    • Hideo KurokawaTetsuya ShiratoriToshifumi SatoMasahiro DeguchiMakoto Kitabatake
    • H01J130
    • H01J1/316H01J2329/00
    • The first basic structure of the electron emission element of the present invention, includes at least two electrodes disposed in a horizontal direction at a predetermined interval, and a plurality of electron emission portions made of a particle or an aggregate of the particles dispersively disposed between the electrodes. On the other hand, the second basic structure of the electron emission element of the present invention includes at least two electrodes disposed at a predetermined interval, a conductive layer disposed between the electrodes so as to be electrically connected thereto, and a plurality of electron emission portions made of a particle or an aggregate of the particles dispersively disposed on the surface of the conductive layer between the electrodes. According to these structures, an electron emission element with high stability can be obtained, in which emissions can be emitted efficiently and uniformly even in the absence of a bias voltage (electric field) from outside in an output (emission) direction of the electrons, by utilizing a transverse electric field generated between the electrodes disposed in a horizontal direction at a predetermined interval or an in-plane electric current flowing through the conductive layer disposed between the electrodes.
    • 本发明的电子发射元件的第一基本结构包括至少两个以预定间隔设置在水平方向上的电极,以及多个电子发射部分,其由分散地设置在 电极。 另一方面,本发明的电子发射元件的第二基本结构包括以预定间隔设置的至少两个电极,设置在电极之间以与其电连接的导电层和多个电子发射 分散地设置在电极之间的导电层的表面上的由颗粒或聚集体构成的部分。 根据这些结构,可以获得具有高稳定性的电子发射元件,其中即使在电子的输出(发射)方向上没有来自外部的偏置电压(电场)的情况下也可以有效且均匀地发射, 通过利用在预定间隔沿水​​平方向布置的电极之间产生的横向电场或流过设置在电极之间的导电层的面内电流。
    • 2. 发明授权
    • Electron emission element and method for producing the same
    • 电子发射元件及其制造方法
    • US06827624B2
    • 2004-12-07
    • US10196032
    • 2002-07-15
    • Hideo KurokawaTetsuya ShiratoriToshifumi SatoMasahiro DeguchiMakoto Kitabatake
    • Hideo KurokawaTetsuya ShiratoriToshifumi SatoMasahiro DeguchiMakoto Kitabatake
    • H01J900
    • H01J1/316H01J2329/00
    • The first basic structure of the electron emission element of the present invention includes at least two electrodes disposed in a horizontal direction at a predetermined interval, and a plurality of electron emission portions made of a particle or an aggregate of the particles dispersively disposed between the electrodes. On the other hand, the second basic structure of the electron emission element of the present invention includes at least two electrodes disposed at a predetermined interval, a conductive layer disposed between the electrodes so as to be electrically connected thereto, and a plurality of electron emission portions made of a particle or an aggregate of the particles dispersively disposed on the surface of the conductive layer between the electrodes. According to these structures, an electron emission element with high stability can be obtained, in which emissions can be emitted efficiently and uniformly even in the absence of a bias voltage (electric field) from outside in an output (emission) direction of the electrons, by utilizing a transverse electric field generated between the electrodes disposed in a horizontal direction at a predetermined interval or an in-plane electric current flowing through the conductive layer disposed between the electrodes.
    • 本发明的电子发射元件的第一基本结构包括以预定间隔沿水​​平方向布置的至少两个电极和由分散地设置在电极之间的颗粒或聚集体的多个电子发射部分 。 另一方面,本发明的电子发射元件的第二基本结构包括以预定间隔设置的至少两个电极,设置在电极之间以与其电连接的导电层和多个电子发射 分散地设置在电极之间的导电层的表面上的由颗粒或聚集体构成的部分。 根据这些结构,可以获得具有高稳定性的电子发射元件,其中即使在电子的输出(发射)方向上没有来自外部的偏置电压(电场)的情况下也可以有效且均匀地发射, 通过利用在预定间隔沿水​​平方向布置的电极之间产生的横向电场或流过设置在电极之间的导电层的面内电流。
    • 8. 发明授权
    • Electron-emitting device
    • 电子发射器件
    • US06350999B1
    • 2002-02-26
    • US09449525
    • 1999-11-29
    • Takeshi UenoyamaTakao TohdaMasahiro DeguchiMakoto KitabatakeKentaro Setsune
    • Takeshi UenoyamaTakao TohdaMasahiro DeguchiMakoto KitabatakeKentaro Setsune
    • H01L310328
    • H01J1/308
    • In an electron-emitting device, an electron supplying layer for supplying electrons is composed of an n-GaN layer. An electron transferring layer for moving electrons toward the surface is composed of non-doped (intrinsic) AlxGa1−xN (0≦x≦1) having a graded composition for the Al concentration x. A surface layer is composed of non-doped AlN having a negative electron affinity (NEA). The electron transferring layer composed of AlxGa1−xN has a band gap which is enlarged nearly continuously from the electron supplying layer to the surface layer and a negative electron affinity or a positive electron affinity close to zero. If such a voltage V as to render the surface electrode side positive is applied, the band of AlxGa1−xN is bent, whereby a current derived mainly from a diffused current flows from the electron supplying layer to the surface layer through the electron transferring layer. Thereby excellent electron emitting characteristic is obtained.
    • 在电子发射器件中,用于提供电子的电子供应层由n-GaN层组成。 用于向表面移动电子的电子转移层由具有Al浓度x的梯度组成的非掺杂(本征)Al x Ga 1-x N(0 <= x <= 1)组成。 表面层由具有负电子亲和力(NEA)的非掺杂AlN组成。 由Al x Ga 1-x N组成的电子转移层具有从电子供给层到表面层几乎连续扩大的带隙,接近零的负电子亲和力或正电子亲和力。 如果施加使表面电极侧为正的电压V,则Al x Ga 1-x N的带被弯曲,主要由扩散电流导出的电流从电子供给层通过电子转移层流向表面层。 由此获得优异的电子发射特性。