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1. 发明授权

US5902713A Chemical-sensitization photoresist composition 失效
公开(公告)号：US5902713A
公开(公告)日：1999-05-11
申请号：US762920
申请日：1996-12-10
申请人： Hideo Hada , Hiroyuki Yamazaki , Yoshiki Sugeta , Hiroshi Komano , Kiyoshi Ishikawa
发明人： Hideo Hada , Hiroyuki Yamazaki , Yoshiki Sugeta , Hiroshi Komano , Kiyoshi Ishikawa
IPC分类号： C09K3/00 , G03F7/004 , G03F7/033 , G03F7/038 , G03F7/039 , H01L21/027 , G03C5/00
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/039 , Y10S430/12 , Y10S430/122
摘要： Disclosed are novel high-sensitivity positive- and negative-working chemical-sensitization photoresist compositions capable of giving a highly heat-resistant patterned resist layer of high resolution having excellently orthogonal cross sectional profile without being influenced by standing waves. The composition contains, as an acid generating agent by irradiation with actinic rays, a specific cyano-substituted oximesulfonate compound such as .alpha.-(methylsulfonyloxyimino)-4-methoxybenzyl cyanide. The advantages obtained by the use of this specific acid-generating agent is remarkable when the film-forming resinous ingredient has such a molecular weight distribution that the ratio of the weight-average molecular weight to the number-average molecular weight does not exceed 3.5.

2. 发明授权

US5928837A Negative-working chemical-sensitization photoresist composition comprising oxime sulfonate compounds 失效
标题翻译：包含肟磺酸盐化合物的负性化学增感光致抗蚀剂组合物
公开(公告)号：US5928837A
公开(公告)日：1999-07-27
申请号：US987023
申请日：1997-12-09
申请人： Mitsuru Sato , Kiyoshi Ishikawa , Yoshiki Sugeta , Hiroyuki Yamazaki , Toshikazu Tachikawa , Hiroshi Komano
发明人： Mitsuru Sato , Kiyoshi Ishikawa , Yoshiki Sugeta , Hiroyuki Yamazaki , Toshikazu Tachikawa , Hiroshi Komano
IPC分类号： G03F7/004 , G03F7/038 , H01L21/027 , G03C1/492
CPC分类号： G03F7/038 , G03F7/0045 , Y10S430/12 , Y10S430/122
摘要： Proposed is a novel negative-working chemical-sensitization photoresist composition used in the photolithographic patterning work for the manufacture of semiconductor devices and the like and capable of giving a patterned resist layer with high sensitivity and pattern resolution as well as excellent heat resistance and excellently orthogonal cross sectional profile of the patterned resist layer. The composition comprises, as a uniform solution:(A) 100 parts by weight of an alkali-soluble resin which is a polyhydroxystyrene-based resin having a weight-average molecular weight of at least 2000;(B) from 3 to 70 parts by weight of an acid-crosslinkable compound which is an amino resin having hydroxyalkyl and/or alkoxyalkyl groups;(C) from 0.5 to 30 parts by weight of a radiation-sensitive acid-generating compound selected from several types of specific oximesulfonate compounds; and(D) from 0.5 to 10 parts by weight of a phenolic compound, such as benzophenone compounds, having at least four hydroxyl groups in a molecule and a molecular weight smaller than 2000.
摘要翻译：提出了用于制造半导体器件等的光刻图案化工作中的新颖的负极化学增感光致抗蚀剂组合物，并且能够提供具有高灵敏度和图案分辨率的图案化抗蚀剂层以及优异的耐热性和良好的正交图案化抗蚀剂层的横截面轮廓。该组合物包含作为均匀溶液：（A）100重量份作为重均分子量为至少2000的聚羟基苯乙烯类树脂的碱溶性树脂; （B）3〜70重量份作为具有羟烷基和/或烷氧基烷基的氨基树脂的酸交联性化合物; （C）0.5〜30重量份选自几种特定肟磺酸酯化合物的辐射敏感产酸化合物; 和（D）0.5〜10重量份在分子中具有至少四个羟基并且分子量小于2000的酚类化合物，例如二苯甲酮化合物。

3. 发明授权

US5955241A Chemical-amplification-type negative resist composition and method for forming negative resist pattern 失效
标题翻译：化学放大型负型抗蚀剂组合物及其形成负型抗蚀剂图案的方法
公开(公告)号：US5955241A
公开(公告)日：1999-09-21
申请号：US956792
申请日：1997-10-23
申请人： Mitsuru Sato , Kiyoshi Ishikawa , Hiroyuki Yamazaki , Yoshiki Sugeta , Toshimasa Nakayama
发明人： Mitsuru Sato , Kiyoshi Ishikawa , Hiroyuki Yamazaki , Yoshiki Sugeta , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/038 , G03C1/492
CPC分类号： G03F7/038 , G03F7/0045 , Y10S430/12 , Y10S430/122
摘要： The present invention provides a chemical-amplification-type negative resist composition and a method for forming a negative resist pattern using the same. The chemical-amplification-type negative resist composition comprises (A) an alkali-soluble resin, (B) an acid-generating agent, and (C) a compound capable of causing crosslinking reaction in the presence of an acid, wherein the ingredient (A) is a mixture comprising (i) a copolymer which comprises constitutional repeating units of a hydroxystyrene type, has a weight average molecular weight of 2,000 to 4,000, and has a ratio of the weight average molecular weight to the number average molecular weight falling within 1.0 to 2.0; and (ii) a hydroxystyrene homopolymer, and wherein the dissolution rate of the ingredient (A) at 23.degree. C. in a 2.38% by weight tetramethylammonium hydroxide aqueous solution falls within 80 to 300 nm/s.
摘要翻译：本发明提供化学放大型负光刻胶组合物和使用其形成负光刻胶图案的方法。化学增幅型负性抗蚀剂组合物包含（A）碱溶性树脂，（B）酸产生剂和（C）在酸存在下能够引起交联反应的化合物，其中成分（ A）是包含（i）包含羟基苯乙烯型结构重复单元的共聚物，其重均分子量为2,000至4,000的共聚物，并且其重均分子量与数均分子量的比率 1.0〜2.0; 和（ii）羟基苯乙烯均聚物，并且其中成分（A）在23℃在2.38重量％四甲基氢氧化铵水溶液中的溶解速率为80-300nm / s。

4. 发明授权

US08043798B2 Method of forming fine patterns 有权
标题翻译：形成精细图案的方法
公开(公告)号：US08043798B2
公开(公告)日：2011-10-25
申请号：US10644738
申请日：2003-08-21
申请人： Tsuyoshi Nakamura , Tasuku Matsumiya , Kiyoshi Ishikawa , Yoshiki Sugeta , Toshikazu Tachikawa
发明人： Tsuyoshi Nakamura , Tasuku Matsumiya , Kiyoshi Ishikawa , Yoshiki Sugeta , Toshikazu Tachikawa
IPC分类号： G03C5/00
CPC分类号： G03F7/40 , C23F1/02 , H01L21/0273 , Y10S430/143
摘要： It is disclosed a method of forming fine patterns comprising: covering a substrate having photoresist patterns thereon made of a photoresist composition which is sensitive to high energy light rays with wavelength of 200 nm or shorter or electron beam radiation, with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely. The present invention provides a method of forming fine patterns whereby fine patterns having pattern width or diameter of 100 nm or shorter and being excellent in uniformity (in-plane uniformity), etc. can be formed by ultrafine processing using high energy light rays with wavelength of 200 nm or shorter or electron beams.
摘要翻译：公开了一种形成精细图案的方法，包括：在其上涂覆由光致抗蚀剂组合物制成的光刻胶图案的基板，其对波长为200nm或更短的高能量光线或电子束辐射敏感，形成精细图案，进行热处理以引起覆盖剂的热收缩，使得由于所得热收缩作用而使相邻光致抗蚀剂图案之间的间隔减小，并且基本上完全除去覆盖剂。本发明提供一种形成精细图案的方法，由此可以通过使用具有波长的高能量光线的超细处理来形成图案宽度或直径为100nm以下并且均匀性（面内均匀性）等优异的精细图案为200nm以下或电子束。

5. 发明授权

US6042988A Chemical-amplification-type negative resist composition 有权
标题翻译：化学放大型负光刻胶组合物
公开(公告)号：US6042988A
公开(公告)日：2000-03-28
申请号：US161778
申请日：1998-09-29
申请人： Mitsuro Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko , Yoshiki Sugeta
发明人： Mitsuro Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko , Yoshiki Sugeta
IPC分类号： G03F7/004 , G03F7/038 , G03C1/492
CPC分类号： G03F7/038 , G03F7/0045 , Y10S430/12 , Y10S430/122
摘要： The present invention provides a chemical-amplification-type negative resist composition containing an alkali-soluble resin, a compound capable of generating an acid by irradiation and a crosslinking agent, and the resist composition of the present invention is characterized in that it further contains an organic carboxylic acid compound as an acidic compound and an organic amine compound as an alkaline compound. According to the content of such acidic and alkaline compounds, the negative resist composition achieves a negative resist pattern exhibiting improved definition and an excellent profile with a reduced dependency on the type of substrate as well as a minimized change in the sensitivety and film thickness with the passage of time and a satisfactory PEG margin, and therefore, the negative resist composition of the present invention can be used in the field of manufacturing electronic parts such as semiconductor devices and liquid-crystal display devices, where finer and more precise processing is increasingly required.
摘要翻译：本发明提供一种含有碱溶性树脂，能够通过照射产生酸的化合物和交联剂的化学扩增型负性抗蚀剂组合物，其特征在于，其还含有作为酸性化合物的有机羧酸化合物和作为碱性化合物的有机胺化合物。根据这种酸性和碱性化合物的含量，负性抗蚀剂组合物实现了抗蚀剂图案显示出改善的清晰度和优异的轮廓，对基材的类型的依赖性降低，并且使敏感度和膜厚度的最小化变化与时间的流逝和令人满意的PEG余量，因此，本发明的负性抗蚀剂组合物可以用于半导体器件和液晶显示器件等电子部件的制造领域，其中越来越需要更精细和更精确的加工。

6. 发明申请

US20090029284A1 PATTERN COATING MATERIAL AND PATTERN FORMING METHOD 有权
标题翻译：图案涂料和图案形成方法
公开(公告)号：US20090029284A1
公开(公告)日：2009-01-29
申请号：US11993444
申请日：2006-06-16
申请人： Shogo Matsumaru , Toshiyuki Ogata , Kiyoshi Ishikawa , Hideo Hada , Shigenori Fujikawa , Toyoki Kunitake
发明人： Shogo Matsumaru , Toshiyuki Ogata , Kiyoshi Ishikawa , Hideo Hada , Shigenori Fujikawa , Toyoki Kunitake
IPC分类号： G03F7/075 , G03F7/20
CPC分类号： H01L21/0273 , G03F7/405
摘要： There are provided a coating material which improves an etching resistance of a pattern in an etching process using a pattern formed on a substrate as a mask.The material is a pattern coating material for an etching process using a pattern formed on a substrate as a mask, including a metal compound (W) which can produce a hydroxyl group on hydrolysis.
摘要翻译：提供一种涂覆材料，其使用在基板上形成的图案作为掩模，在蚀刻工艺中提高图案的耐蚀刻性。该材料是使用在基板上形成的图案作为掩模的蚀刻工艺的图案涂覆材料，其包括在水解时可产生羟基的金属化合物（W）。

7. 发明授权

US07932013B2 Pattern coating material and pattern forming method 有权
标题翻译：图案涂层材料和图案形成方法
公开(公告)号：US07932013B2
公开(公告)日：2011-04-26
申请号：US11993444
申请日：2006-06-16
申请人： Shogo Matsumaru , Toshiyuki Ogata , Kiyoshi Ishikawa , Hideo Hada , Shigenori Fujikawa , Toyoki Kunitake
发明人： Shogo Matsumaru , Toshiyuki Ogata , Kiyoshi Ishikawa , Hideo Hada , Shigenori Fujikawa , Toyoki Kunitake
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： H01L21/0273 , G03F7/405
摘要： There are provided a coating material which improves an etching resistance of a pattern in an etching process using a pattern formed on a substrate as a mask.The material is a pattern coating material for an etching process using a pattern formed on a substrate as a mask, including a metal compound (W) which can produce a hydroxyl group on hydrolysis.
摘要翻译：提供一种涂覆材料，其使用在基板上形成的图案作为掩模，在蚀刻工艺中提高图案的耐蚀刻性。该材料是使用在基板上形成的图案作为掩模的蚀刻工艺的图案涂覆材料，其包括在水解时可产生羟基的金属化合物（W）。

8. 发明授权

US08323745B2 Application liquid and method for formation of a silica-based coating film using the application liquid 有权
标题翻译：应用液体和使用该涂布液形成二氧化硅基涂膜的方法
公开(公告)号：US08323745B2
公开(公告)日：2012-12-04
申请号：US12748146
申请日：2010-03-26
申请人： Tokonori Yamadaya , Kiyoshi Ishikawa , Atsushi Sawano
发明人： Tokonori Yamadaya , Kiyoshi Ishikawa , Atsushi Sawano
IPC分类号： B05D3/02
CPC分类号： C03C17/25 , C09D183/04 , C08K5/205
摘要： An application liquid capable of forming a dense silica-based coating film even when embedded into a fine groove, and a method for formation of a silica-based coating film using the application liquid are provided. An application liquid is used including (A) a siloxane polymer, and (B) a base generator represented by the following general formula (I): wherein, R1 and R2 are a hydrocarbon group having 1 to 5 carbon atoms and which may be the same or different; or one of R1 and R2 is a hydrogen atom and the other is a hydrocarbon group having 1 to 5 carbon atoms; when R1 and R2 are both a hydrocarbon group, these may bind to one another to form a ring structure; R3 is a linking group; and R4 is a condensed ring.
摘要翻译：提供即使嵌入微细沟槽也能够形成致密二氧化硅系涂膜的涂布液，以及使用该涂布液形成二氧化硅系涂膜的方法。使用包含（A）硅氧烷聚合物和（B）由以下通式（I）表示的碱发生剂的应用液：其中，R 1和R 2是具有1至5个碳原子的烃基，并且可以是相同或不同; R 1和R 2中的一个为氢原子，另一个为碳原子数为1〜5的烃基; 当R1和R2都是烃基时，它们可以彼此结合形成环结构; R3是连接基团; R4是稠环。

9. 发明授权

US07969343B2 Successive approximation analog-digital converter circuit using capacitance array 有权
标题翻译：使用电容阵列的逐次近似模数转换电路
公开(公告)号：US07969343B2
公开(公告)日：2011-06-28
申请号：US12685438
申请日：2010-01-11
申请人： Kiyoshi Ishikawa
发明人： Kiyoshi Ishikawa
IPC分类号： H03M1/12
CPC分类号： H03M1/0604 , H03M1/468 , H03M1/804
摘要： An analog-to-digital converter circuit includes: a capacitor array including a plurality of first capacitors, each having a first terminal connecting to a common node and having a capacitance represented by the nth power of 2 (2n) on the basis of the smallest of the capacitances of the first capacitors=1; a second capacitor for contributing to attenuation of the voltage on the common node; a switch array, each switch of the switch array supplying and disconnecting one of a first reference voltage, a second reference voltage, and the voltage of an input signal to and from a second terminal of an associated one of the first capacitors; a second switch supplying and disconnecting a third reference voltage to and from the common node; a comparator comparing a voltage on the common node with the third reference voltage; and a control circuit controlling the first switches and the second switch.
摘要翻译：一种模拟 - 数字转换器电路包括：电容器阵列，包括多个第一电容器，每个第一电容器具有连接到公共节点的第一端子，并且具有基于最小的第二电容器的第一电容器的电容= 1; 用于有助于衰减公共节点上的电压的第二电容器; 开关阵列的每个开关，将第一参考电压，第二参考电压和与第一电容器中相关联的一个的第二端子的输入信号的电压中的一个提供和断开; 向所述公共节点提供和断开第三参考电压的第二开关; 比较公共节点上的电压与第三参考电压的比较器; 以及控制所述第一开关和所述第二开关的控制电路。

10. 发明申请

US20100301853A1 POLARIZING NUCLEI IN SOLIDS VIA SPIN TRANSFER FROM AN OPTICALLY-PUMPED ALKALI VAPOR 有权
标题翻译：通过从光学抽吸的碱性蒸气中转移的固体中的极化核
公开(公告)号：US20100301853A1
公开(公告)日：2010-12-02
申请号：US12439846
申请日：2007-09-05
申请人： William Happer , Kiyoshi Ishikawa , Brian Patton , Yuan-Yu Jau
发明人： William Happer , Kiyoshi Ishikawa , Brian Patton , Yuan-Yu Jau
IPC分类号： G01R33/44
CPC分类号： G01R33/282 , G01N24/081 , G01R33/4641 , G01R33/5601
摘要： The present invention relates to a method and system for polarizing a solid compound of interest via spin transfer from an optically-pumped alkali vapor. In one embodiment, the method provides a cell which contains a solid compound as well as pure alkali metal and some amount of buffer gas. The cell is heated to vaporize some of the pure alkali. Resonant laser light is passed through the cell to polarize the atomic vapor, a process known as “optical pumping.” Optical pumping can transfer order from photons to atoms, causing a buildup of vapor atoms in one angular momentum state. This vapor polarization is then transferred through the surface of the solid compound in order to polarize the nuclei in the bulk of the compound. This can produce nuclear polarizations in the sample many times larger than the limit set by thermal equilibrium. The method can be used in nuclear magnetic resonance (NMR) or magnetic resonance imaging (MRI).
摘要翻译：本发明涉及一种通过旋光转移从光泵浦的碱蒸气偏振感兴趣的固体化合物的方法和系统。在一个实施方案中，该方法提供了含有固体化合物以及纯碱金属和一定量缓冲气体的电池。将电解槽加热以蒸发一些纯碱。谐振激光通过电池以使原子蒸气偏振，一种称为“光泵浦”的过程。光泵浦可以将光子从原子转移到原子，从而在一个角动量状态下形成蒸气原子。然后将该蒸气极化转移通过固体化合物的表面，以使化合物的主体中的核极化。这可以在样品中产生比通过热平衡设定的极限多许多倍的核极化。该方法可用于核磁共振（NMR）或磁共振成像（MRI）。

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