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1. 发明申请

US20050042544A1 Positive-working chemical-amplification photoresist composition 审中-公开
标题翻译：正性化学增幅光刻胶组合物
公开(公告)号：US20050042544A1
公开(公告)日：2005-02-24
申请号：US10952798
申请日：2004-09-30
申请人： Katsumi Oomori , Hiroto Yukawa , Ryusuke Uchida , Kazufumi Sato
发明人： Katsumi Oomori , Hiroto Yukawa , Ryusuke Uchida , Kazufumi Sato
IPC分类号： G03F7/004 , G03F7/039 , C11D1/00
CPC分类号： G03F7/0045 , G03F7/0392 , Y10S430/106 , Y10S430/111 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an iodonium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.
摘要翻译：公开了一种能够在半导体器件的制造过程中给出非常精细图案化的抗蚀剂层的新颖的正性化学扩增光致抗蚀剂组合物。光致抗蚀剂组合物包括：（A）100重量份由50-85摩尔％（a）含羟基的苯乙烯单元，15-35摩尔％的（b）苯乙烯单元组成的共聚树脂和 2〜20摩尔％的（c）丙烯酸酯或甲基丙烯酸酯单元，其各自具有可在酸存在下消除的溶解性降低基团; 和（B）1〜20重量份的辐射敏感性酸产生剂，其是含有具有3至10个碳原子的氟烷基磺酸根离子作为阴离子的碘鎓盐，例如双（4-叔丁基苯基）碘鎓九氟丁烷磺酸盐。

2. 发明授权

US06777158B2 Method for the preparation of a semiconductor device 有权
标题翻译：制备半导体器件的方法
公开(公告)号：US06777158B2
公开(公告)日：2004-08-17
申请号：US09939842
申请日：2001-08-28
申请人： Satoshi Maemori , Kazufumi Sato , Kazuyuki Nitta , Katsumi Oomori , Kazuo Tani , Yohei Kinoshita , Tomotaka Yamada
发明人： Satoshi Maemori , Kazufumi Sato , Kazuyuki Nitta , Katsumi Oomori , Kazuo Tani , Yohei Kinoshita , Tomotaka Yamada
IPC分类号： G03F7004
CPC分类号： G03F7/0392
摘要： The invention discloses an improvement in the photo-lithographic patterning process of a photoresist layer in the manufacture of semiconductor devices in which occurrence of defects in the patterned resist layer can be greatly suppressed resulting in increased reliability of the semiconductor devices and productivity thereof. The improvement can be accomplished by using a chemical-amplification positive-working photoresist composition which exhibits a rate of film thickness reduction in the range from 0.09 to 1.0 nm/second when the photoresist layer before light-exposure is kept in a 2.38% aqueous solution of tetramethylammonium hydroxide at 23° C. to dissolve away the resist layer.
摘要翻译：本发明公开了在半导体器件的制造中光致抗蚀剂层的光刻图案化工艺的改进，其中可以大大抑制图案化抗蚀剂层中的缺陷的发生，从而提高半导体器件的可靠性及其生产率。可以通过使用化学扩增正性光致抗蚀剂组合物来实现改进，当将曝光前的光致抗蚀剂层保持在2.38％的水溶液中时，其表现出在0.09至1.0nm /秒的范围内的膜厚度降低速率的氢氧化四甲铵在23℃下溶解掉抗蚀剂层。

3. 发明授权

US06773863B2 Positive-working chemical-amplification photoresist composition 有权
标题翻译：正性化学增幅光刻胶组合物
公开(公告)号：US06773863B2
公开(公告)日：2004-08-10
申请号：US10369748
申请日：2003-02-21
申请人： Katsumi Oomori , Hiroto Yukawa , Ryusuke Uchida , Kazufumi Sato
发明人： Katsumi Oomori , Hiroto Yukawa , Ryusuke Uchida , Kazufumi Sato
IPC分类号： G03C173
CPC分类号： G03F7/0392 , G03F7/0045 , Y10S430/106 , Y10S430/11 , Y10S430/111 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.
摘要翻译：公开了一种能够在半导体器件的制造过程中给出非常精细图案化的抗蚀剂层的新颖的正性化学扩增光致抗蚀剂组合物。光致抗蚀剂组合物包括：（A）100重量份由50-85摩尔％（a）含羟基的苯乙烯单元，15-35摩尔％的（b）苯乙烯单元组成的共聚树脂和 2〜20摩尔％的（c）丙烯酸酯或甲基丙烯酸酯单元，其各自具有可在酸存在下消除的溶解性降低基团; 和（B）1〜20重量份的辐射敏感性酸产生剂，其是含有具有3至10个碳原子的氟代烷基磺酸根离子作为阴离子的鎓盐，例如双（4-叔丁基苯基）碘鎓九氟丁烷磺酸盐。

4. 发明授权

US06630282B2 Crosslinked positive-working photoresist composition 有权
公开(公告)号：US06630282B2
公开(公告)日：2003-10-07
申请号：US09928399
申请日：2001-08-14
申请人： Katsumi Oomori , Yohei Kinoshita , Tomotaka Yamada , Toshikazu Takayama
发明人： Katsumi Oomori , Yohei Kinoshita , Tomotaka Yamada , Toshikazu Takayama
IPC分类号： G03F7038
CPC分类号： G03F7/039 , G03F7/0045
摘要： The invention discloses a chemical-amplification positive-working photoresist composition of the crosslinked type used for photolithographic patterning works in the manufacture of electronic devices. While the composition comprises a film-forming resinous ingredient capable of being imparted with increased alkali-solubility in the presence of an acid and a radiation-sensitive acid-generating compound, optionally, with further admixture of an aliphatic amine compound and an acid compound, the inventive photoresist composition is characterized by the unique resinous ingredient which consists of four types of monomeric units including hydroxystyrene units, styrene units, monomeric units having acid-dissociable solubility-reducing groups and crosslinking units. The acid-dissociable solubility-reducing group is not conventional tert-butoxycarbonyloxy group but characteristically a 1-alkylcyclohexyl group or a polycyclic saturated aliphatic hydrocarbon group.

5. 发明授权

US06387587B1 Positive-working chemical-amplification photoresist composition 有权
公开(公告)号：US06387587B1
公开(公告)日：2002-05-14
申请号：US09291116
申请日：1999-04-14
申请人： Katsumi Oomori , Hiroto Yukawa , Ryusuke Uchida , Kazufumi Sato
发明人： Katsumi Oomori , Hiroto Yukawa , Ryusuke Uchida , Kazufumi Sato
IPC分类号： G03C173
CPC分类号： G03F7/0392 , G03F7/0045 , Y10S430/106 , Y10S430/11 , Y10S430/111 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.

6. 发明授权

US6042988A Chemical-amplification-type negative resist composition 有权
标题翻译：化学放大型负光刻胶组合物
公开(公告)号：US6042988A
公开(公告)日：2000-03-28
申请号：US161778
申请日：1998-09-29
申请人： Mitsuro Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko , Yoshiki Sugeta
发明人： Mitsuro Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko , Yoshiki Sugeta
IPC分类号： G03F7/004 , G03F7/038 , G03C1/492
CPC分类号： G03F7/038 , G03F7/0045 , Y10S430/12 , Y10S430/122
摘要： The present invention provides a chemical-amplification-type negative resist composition containing an alkali-soluble resin, a compound capable of generating an acid by irradiation and a crosslinking agent, and the resist composition of the present invention is characterized in that it further contains an organic carboxylic acid compound as an acidic compound and an organic amine compound as an alkaline compound. According to the content of such acidic and alkaline compounds, the negative resist composition achieves a negative resist pattern exhibiting improved definition and an excellent profile with a reduced dependency on the type of substrate as well as a minimized change in the sensitivety and film thickness with the passage of time and a satisfactory PEG margin, and therefore, the negative resist composition of the present invention can be used in the field of manufacturing electronic parts such as semiconductor devices and liquid-crystal display devices, where finer and more precise processing is increasingly required.
摘要翻译：本发明提供一种含有碱溶性树脂，能够通过照射产生酸的化合物和交联剂的化学扩增型负性抗蚀剂组合物，其特征在于，其还含有作为酸性化合物的有机羧酸化合物和作为碱性化合物的有机胺化合物。根据这种酸性和碱性化合物的含量，负性抗蚀剂组合物实现了抗蚀剂图案显示出改善的清晰度和优异的轮廓，对基材的类型的依赖性降低，并且使敏感度和膜厚度的最小化变化与时间的流逝和令人满意的PEG余量，因此，本发明的负性抗蚀剂组合物可以用于半导体器件和液晶显示器件等电子部件的制造领域，其中越来越需要更精细和更精确的加工。

7. 发明授权

US06815144B2 Positive-working chemical-amplification photoresist composition 有权
标题翻译：正性化学增幅光刻胶组合物
公开(公告)号：US06815144B2
公开(公告)日：2004-11-09
申请号：US10059236
申请日：2002-01-31
申请人： Katsumi Oomori , Hiroto Yukawa , Ryusuke Uchida , Kazufumi Sato
发明人： Katsumi Oomori , Hiroto Yukawa , Ryusuke Uchida , Kazufumi Sato
IPC分类号： G03C173
CPC分类号： G03F7/0045 , G03F7/0392 , Y10S430/106 , Y10S430/111 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an iodonium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.
摘要翻译：公开了一种能够在半导体器件的制造过程中给出非常精细图案化的抗蚀剂层的新颖的正性化学扩增光致抗蚀剂组合物。光致抗蚀剂组合物包括：（A）100重量份由50-85摩尔％（a）含羟基的苯乙烯单元，15-35摩尔％的（b）苯乙烯单元组成的共聚树脂和 2〜20摩尔％的（c）丙烯酸酯或甲基丙烯酸酯单元，其各自具有可在酸存在下消除的溶解性降低基团; 和（B）1〜20重量份的辐射敏感性酸产生剂，其是含有具有3至10个碳原子的氟烷基磺酸根离子作为阴离子的碘鎓盐，例如双（4-叔丁基苯基）碘鎓九氟丁烷磺酸盐。

8. 发明授权

US06255041B1 Method for formation of patterned resist layer 有权
标题翻译：图案化抗蚀剂层的形成方法
公开(公告)号：US06255041B1
公开(公告)日：2001-07-03
申请号：US09291114
申请日：1999-04-14
申请人： Katsumi Oomori , Hiroto Yukawa , Ryusuke Uchida , Kazufumi Sato
发明人： Katsumi Oomori , Hiroto Yukawa , Ryusuke Uchida , Kazufumi Sato
IPC分类号： G03F726
CPC分类号： G03F7/38 , G03F7/0045 , G03F7/039
摘要： Disclosed is a method for forming an extremely finely patterned resist layer on a substrate surface by using a positive-working chemical-amplification photoresist composition in the manufacturing process of semiconductor devices. The method for the formation of a patterned resist layer comprises the steps of: (1) forming, on a substrate, a layer of a photoresist composition comprising: (A) a copolymeric resin consisting of (a) from 50 to 85% by moles of hydroxyl group-containing styrene units, (b) from 15 to 35% by moles of styrene units and (c) from 2 to 20% by moles of acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 1 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate; (2) subjecting the photoresist layer to a first heat treatment at a temperature in the range from 120° C. to 140° C.; (3) subjecting the photoresist layer to pattern-wise exposure to light; (4) subjecting the photoresist layer to a second heat treatment at a temperature in the range from 110° C. to 130° C. but lower than the temperature of the first heat treatment; and (5) subjecting the photoresist layer to a development treatment.
摘要翻译：公开了通过在半导体器件的制造过程中使用正性化学扩增光致抗蚀剂组合物在基板表面上形成极细图案化的抗蚀剂层的方法。用于形成图案化抗蚀剂层的方法包括以下步骤：（1）在基材上形成光致抗蚀剂组合物层，该层包含：（A）由（a）50-85摩尔％的含羟基的苯乙烯单元，（b）15〜35摩尔％的苯乙烯单元，和（c）2〜20摩尔％的具有能够除去的溶解性降低基团的丙烯酸酯或甲基丙烯酸酯单元酸的存在; 和（B）辐射敏感的酸产生剂，其是含有具有1-10个碳原子的氟烷基磺酸根离子作为阴离子的鎓盐，例如双（4-叔丁基苯基）碘鎓九氟丁烷磺酸盐; （2）在120℃至140℃的温度下对光致抗蚀剂层进行第一次热处理; （3）对光致抗蚀剂层进行图案曝光; （4）使光致抗蚀剂层在110℃至130℃的温度下进行第二次热处理，但低于第一次热处理的温度; 和（5）对光致抗蚀剂层进行显影处理。

9. 发明授权

US5976760A Chemical-sensitization resist composition 失效
标题翻译：化学增感抗蚀剂组合物
公开(公告)号：US5976760A
公开(公告)日：1999-11-02
申请号：US898105
申请日：1997-07-22
申请人： Katsumi Oomori , Hideo Hada , Fumitake Kaneko , Mitsuru Sato , Kazufumi Sato , Toshimasa Nakayama
发明人： Katsumi Oomori , Hideo Hada , Fumitake Kaneko , Mitsuru Sato , Kazufumi Sato , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027 , G03C1/492
CPC分类号： G03F7/0045 , Y10S430/12 , Y10S430/122
摘要： Proposed is a novel chemical-sensitization resist composition capable of giving a positively or negatively patterned resist layer of excellent pattern resolution and cross sectional profile of the patterned resist layer with high sensitivity. Characteristically, the resist composition is formulated, as combined with a resinous ingredient which is subject to changes in the solubility behavior in an alkaline developer solution by interaction with an acid, with a specific oximesulfonate compound as the radiation-sensitive acid-generating agent represented by the general formulaR.sup.1 --C(CN).dbd.N--O--SO.sub.2 --R.sup.2,in which R.sup.1 is an inert organic group and R.sup.2 is an unsubstituted or substituted polycyclic monovalent hydrocarbon group selected from the group consisting of polycyclic aromatic hydrocarbon groups such as naphthyl and polycyclic non-aromatic hydrocarbon groups such as a terpene or camphor residue.
摘要翻译：提出了一种能够以高灵敏度赋予图案化抗蚀剂层优异图案分辨率和截面轮廓的正或负图案化抗蚀剂层的新型化学增感抗蚀剂组合物。特别地，将抗蚀剂组合物配制成与通过与酸相互作用而在碱性显影剂溶液中溶解度行为发生变化的树脂成分与特定的肟磺酸酯化合物作为辐射敏感性产酸剂，通式为R1-C（CN）= NO-SO2-R2，其中R1为惰性有机基团，R2为未取代或取代的多环一价烃基，选自多环芳烃基如萘基和多环非芳族烃基如萜烯或樟脑残基。

10. 发明授权

US5939510A Undercoating composition for photolithographic resist 失效
标题翻译：光刻抗蚀剂底涂组合物
公开(公告)号：US5939510A
公开(公告)日：1999-08-17
申请号：US845358
申请日：1997-04-24
申请人： Mitsuru Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko
发明人： Mitsuru Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko
IPC分类号： G03F7/11 , C09K3/00 , G03F7/09 , H01L21/027 , C08G8/02 , C08G12/00
CPC分类号： G03F7/091
摘要： Proposed is a novel undercoating composition to form an undercoating layer interposed between the surface of a substrate and a photoresist layer with an object to decrease the adverse influences by the reflection of light on the substrate surface in the pattern-wise exposure of the photoresist layer to ultraviolet light without the undesirable phenomena of intermixing between layers and notching along with a large selectivity ratio in the etching rates between the patterned resist layer and the undercoating layer in a dry-etching treatment. The undercoating composition comprises (A) an ultraviolet absorber which is a benzophenone compound or an aromatic azomethine compound each having at least one unsubstituted or alkyl-substituted amino group on the aryl groups and (B) a crosslinking agent which is preferably a melamine compound having at least two methylol groups or alkoxymethyl groups bonded to the nitrogen atoms in a molecule in a weight proportion (A):(B) in the range from 1:1 to 1:10.
摘要翻译：提出了一种新颖的底涂层组合物，用于形成底涂层和介于光致抗蚀剂层之间的底涂层，目的在于降低光致抗蚀剂层的图案曝光中光的反射对基板表面的不利影响在干蚀刻处理中，在图案化的抗蚀剂层和底涂层之间的蚀刻速率方面，没有不希望的层之间的混合现象和开槽以及大的选择比。底涂层组合物包含（A）紫外线吸收剂，其为在芳基上具有至少一个未取代或烷基取代的氨基的二苯甲酮化合物或芳族偶氮甲碱化合物，（B）优选三聚氰胺化合物的交联剂，其具有至少两个羟甲基或分子中的氮原子以重量比（A）：（B））键合在1：1至1:10范围内的烷氧基甲基。

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