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    • 1. 发明申请
    • ENGINE CONTROL APPARATUS
    • 发动机控制装置
    • US20100250099A1
    • 2010-09-30
    • US12644781
    • 2009-12-22
    • Hideaki ASAKAWATakayuki Yano
    • Hideaki ASAKAWATakayuki Yano
    • F02D41/30
    • F02D41/08F02D41/22F02D41/2493F02D41/263F02D41/36Y02T10/44
    • There is provided an engine control apparatus that makes it possible that, even in the case where an abnormality occurs in a microcomputer and the operations of the injectors in a series of cylinders are interrupted, there is obtained continuous driving without interruption of the engine, when the microcomputer is restored to normal condition. The microcomputer stores in a backup RAM the injection cylinder and the injection fuel amount at a time when a main fuel injection control means sequentially outputs a drive signal to each of the injectors of the cylinders. After the microcomputer 11 is reset due to detection of an abnormality therein and then is restarted, the post-resetting injection cylinder determining means 31 in the microcomputer determines cylinders into which fuel could not be injected during reset period, based on an fuel injection cylinder that has been stored in a backup RAM 11a at a time immediately prior to the resetting, and fuel is immediately and asynchronously injected into the determined cylinders at an injection fuel amount that has been stored in the backup RAM 11a at a time immediately prior to the resetting.
    • 提供了一种发动机控制装置,即使在微型计算机发生异常并且一系列气缸中的喷射器的操作被中断的情况下也可以获得连续驾驶而不会中断发动机,当 微机恢复正常状态。 微型计算机在主燃料喷射控制装置顺序地向气缸的每个喷射器输出驱动信号时,将备注RAM存储在备注RAM中,并且喷射燃料量。 在微计算机11由于其中的异常检测而复位然后重新启动之后,微型计算机中的复位后注射缸确定装置31基于燃料喷射缸确定在复位期间不能喷射燃料的气缸, 已经在紧接复位之前的时间存储在备用RAM 11a中,并且在紧接复位之前的时间点以已经存储在备用RAM 11a中的喷射燃料量立即异步地将燃料和异步地喷射到所确定的气缸中 。
    • 2. 发明授权
    • Engine control apparatus
    • 发动机控制装置
    • US08412444B2
    • 2013-04-02
    • US12644781
    • 2009-12-22
    • Hideaki AsakawaTakayuki Yano
    • Hideaki AsakawaTakayuki Yano
    • G06F19/00G06F7/00G06F17/00
    • F02D41/08F02D41/22F02D41/2493F02D41/263F02D41/36Y02T10/44
    • There is provided an engine control apparatus that makes it possible that, even in the case where an abnormality occurs in a microcomputer and the operations of the injectors in a series of cylinders are interrupted, there is obtained continuous driving without interruption of the engine, when the microcomputer is restored to normal condition. The microcomputer stores in a backup RAM the injection cylinder and the injection fuel amount at a time when a main fuel injection control means sequentially outputs a drive signal to each of the injectors of the cylinders. After the microcomputer 11 is reset due to detection of an abnormality therein and then is restarted, the post-resetting injection cylinder determining means 31 in the microcomputer determines cylinders into which fuel could not be injected during reset period, based on an fuel injection cylinder that has been stored in a backup RAM 11a at a time immediately prior to the resetting, and fuel is immediately and asynchronously injected into the determined cylinders at an injection fuel amount that has been stored in the backup RAM 11a at a time immediately prior to the resetting.
    • 提供了一种发动机控制装置,即使在微型计算机发生异常并且一系列气缸中的喷射器的操作被中断的情况下也可以获得连续驾驶而不会中断发动机,当 微机恢复正常状态。 微型计算机在主燃料喷射控制装置顺序地向气缸的每个喷射器输出驱动信号时,将备注RAM存储在备注RAM中,并且喷射燃料量。 在微计算机11由于其中的异常检测而复位然后重新启动之后,微型计算机中的复位后注射缸确定装置31基于燃料喷射缸确定在复位期间不能喷射燃料的气缸, 已经在紧接复位之前的时间存储在备用RAM 11a中,并且在紧接复位之前的时间点以已经存储在备用RAM 11a中的喷射燃料量立即异步地将燃料和异步地喷射到所确定的气缸中 。
    • 5. 发明授权
    • Alkaline storage battery and process for the production thereof
    • 碱性蓄电池及其生产方法
    • US06682848B1
    • 2004-01-27
    • US09669572
    • 2000-09-26
    • Takayuki YanoMasao TakeeAkifumi Yamawaki
    • Takayuki YanoMasao TakeeAkifumi Yamawaki
    • H01M1024
    • H01M4/742H01M4/70H01M4/745H01M4/808
    • A porous metal material 10 was filled with an active material slurry, dried, and then rolled to a predetermined thickness. This rolling causes pores 11 formed by a network skeleton to be stretched in the rolling direction (direction represented by the arrow in FIG. 1(a)) to form pores 12 having a shape similar to ellipsoid or deformed ellipsoid having a long axis. Subsequently, the porous metal material was cut in such an arrangement that the longitudinal direction of the pores 12 having a shape similar to ellipsoid or deformed ellipsoid coincides with the crosswise direction of the electrode plate, and then subjected to roller treatment through a series of rollers in the longitudinal direction of the electrode plate. This roller treatment causes numerous cracks 14 to be formed at a very small pitch in the direction parallel to the rolling direction as shown diagrammatically in FIG. 1(c).
    • 多孔金属材料10填充有活性材料浆料,干燥,然后轧制至预定厚度。 该轧制使得由网状骨架形成的孔11在轧制方向(图1(a)中的箭头所示的方向)上拉伸,以形成具有与具有长轴的椭圆体或变形椭圆体相似的形状的孔12。 随后,将多孔金属材料切割成具有类似于椭圆形或变形椭圆体的形状的孔12的纵向方向与电极板的横向重合,然后通过一系列辊进行辊式处理 在电极板的纵向上。 这种辊子处理使得在与轧制方向平行的方向上以非常小的间距形成许多裂缝14,如图1所示。 1(c)。
    • 6. 发明授权
    • Process for producing buried insulator layer in semiconductor substrate
    • 在半导体衬底中制造掩埋绝缘体层的工艺
    • US5534446A
    • 1996-07-09
    • US534169
    • 1995-09-26
    • Masaharu TachimoriTakayuki YanoYasuo TsumoriTatsuo NakajimaIsao Hamaguchi
    • Masaharu TachimoriTakayuki YanoYasuo TsumoriTatsuo NakajimaIsao Hamaguchi
    • H01L21/02H01L21/265H01L21/762H01L27/12
    • H01L21/76243H01L21/26533Y10S438/909
    • A process for producing a semiconductor substrate, including the phases of implanting oxygen ions into a semiconductor silicon substrate through one surface thereof to form a high oxygen concentration layer in the semiconductor silicon substrate, and then heat-treating the semiconductor substrate to cause a chemical reaction to occur between the implanted oxygen ions and the silicon, thereby forming an insulating silicon oxide film in the semiconductor silicon substrate, wherein the heat treatment phase includes at least a heat treatment step using an atmosphere having an oxygen partial pressure of 5.times.10.sup.3 Pa or more.The process is advantageously used to produce a high quality SOI semiconductor substrate in which the number of the defects providing a path for current leakage is reduced, the buried oxide layer has an improved dielectric breakdown strength, the interface between the buried oxide film and the adjoining silicon layers has a small roughness, and the buried oxide film can be produced with a wider range of thickness.
    • 一种制造半导体衬底的方法,包括通过其一个表面将氧离子注入到半导体硅衬底中以在半导体硅衬底中形成高氧浓度层的相,然后对半导体衬底进行热处理以引起化学反应 发生在注入的氧离子和硅之间,从而在半导体硅衬底中形成绝缘氧化硅膜,其中热处理阶段至少包括使用氧分压为5×10 3 Pa以上的气氛的热处理工序。 该方法有利地用于制造高质量的SOI半导体衬底,其中提供漏电路径的缺陷数量减少,掩埋氧化物层具有改善的介电击穿强度,掩埋氧化膜与邻接层之间的界面 硅层具有较小的粗糙度,并且能够以较宽的厚度范围制造掩埋氧化膜。