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1. 发明授权

US5403620A Catalysis in organometallic CVD of thin metal films 失效
标题翻译：薄金属薄膜有机金属CVD催化
公开(公告)号：US5403620A
公开(公告)日：1995-04-04
申请号：US959384
申请日：1992-10-13
申请人： Herbert D. Kaesz , Robert F. Hicks
发明人： Herbert D. Kaesz , Robert F. Hicks
IPC分类号： C23C16/18 , C23C16/44 , C23C16/00
CPC分类号： C23C16/18 , C23C16/44
摘要： A process for CVD including plasma enhanced and laser induced CVD using one or more precursor film forming metal compounds as the major film forming metal precursor, for example organotungsten, which is admixed with minor amounts of a precursor catalytic metal compound, for example, an organoplatinum compound, as a precursor to a catalytic metal in the presence of hydrogen gas to provide improved purity of deposited metal films having residual amounts of the catalytic metal incorporated therein.
摘要翻译：使用一种或多种前体成膜金属化合物作为主要成膜金属前体（例如有机钨）的等离子体增强和激光诱导CVD的方法，其与少量的前体催化金属化合物（例如有机铂）混合化合物，作为在氢气存在下的催化金属的前体，以提供沉积的金属膜的纯度，其具有残留量的催化金属。

2. 发明授权

US5130172A Low temperature organometallic deposition of metals 失效
标题翻译：低温有机金属沉积金属
公开(公告)号：US5130172A
公开(公告)日：1992-07-14
申请号：US428245
申请日：1989-10-26
申请人： Robert F. Hicks , Herbert D. Kaesz , Dagiang Xu
发明人： Robert F. Hicks , Herbert D. Kaesz , Dagiang Xu
IPC分类号： C07F1/08 , C07F15/00 , C07F15/04 , C07F15/06 , C23C16/18
CPC分类号： C07F15/0006 , C07F1/08 , C07F15/0033 , C07F15/0073 , C07F15/0086 , C07F15/04 , C07F15/06 , C23C16/18
摘要： A process for coating metal on a substrate. The process uses organometallic compounds such as (trimethyl)(cyclopentadienyl) platinum in the presence of a reducing fluid such as hydrogen gas to produce high purity films capable of selective deposition on substrates containing, for example, tungsten and silicon. The films are deposited using chemical vapor deposition (CVD) or gas phase laser deposition. The invention also comprises devices made from the process of the invention.
摘要翻译：一种在基材上涂覆金属的方法。该方法在还原流体如氢气存在下使用有机金属化合物如（三甲基）（环戊二烯基）铂，以产生能够选择性沉积在含有例如钨和硅的衬底上的高纯度膜。使用化学气相沉积（CVD）或气相激光沉积沉积膜。本发明还包括由本发明的方法制成的装置。

3. 发明授权

US08764701B1 Wound treatment apparatus and method 有权
标题翻译：伤口治疗装置及方法
公开(公告)号：US08764701B1
公开(公告)日：2014-07-01
申请号：US13621719
申请日：2012-09-17
申请人： Robert F. Hicks
发明人： Robert F. Hicks
IPC分类号： A61M37/00 , H01J7/24
CPC分类号： A61B18/042 , A61B34/30 , A61B2018/00023 , A61B2018/00452 , A61B2018/00642 , A61B2018/00744 , A61B2018/00898 , A61B2562/0257 , A61L2/0011 , A61L2/14
摘要： Apparatuses and methods for treating wounds are disclosed. An apparatus for treating wounds is disclosed comprising an instrument for generating a low temperature, atmospheric pressure plasma, a means of flowing gas comprising mixing an inert gas and a reactive gas through the instrument, and a means of contacting the wound with the reactive gases flowing out of the instrument. A method for treating wounds using reactive gases is disclosed. The use of atmospheric pressure plasmas for treating wounds is also disclosed.
摘要翻译：公开了用于治疗伤口的装置和方法。公开了一种用于治疗伤口的装置，包括用于产生低温大气压等离子体的仪器，包括通过仪器混合惰性气体和反应性气体的流动气体的装置，以及使伤口与流动的反应气体接触的手段离开仪器。公开了一种使用反应性气体处理伤口的方法。还公开了使用大气压等离子体治疗伤口。

4. 发明授权

US08632651B1 Plasma surface treatment of composites for bonding 有权
标题翻译：用于粘合的复合材料的等离子体表面处理
公开(公告)号：US08632651B1
公开(公告)日：2014-01-21
申请号：US11770494
申请日：2007-06-28
申请人： Robert F. Hicks , Steve Babayan
发明人： Robert F. Hicks , Steve Babayan
IPC分类号： B29C65/00
CPC分类号： B29C66/721 , B29C65/483 , B29C66/02 , B29C66/028 , B29C66/54 , B29C66/71 , B29C66/7212 , B29C66/72141 , B29C66/742 , B29C66/7461 , B29C66/863 , B29L2031/3076 , B29L2031/3085 , C09J5/02 , C09J2463/00 , B29K2063/00 , B29K2079/08 , B29K2081/06 , B29K2079/085 , B29K2071/00 , B29K2307/04 , B29K2309/08 , B29K2067/00 , B29K2061/04
摘要： A method for bonding composites together that is fast and effective, and can be applied to any structure regardless of its size and shape, and its related product are disclosed. The method comprises first subjecting at least a part of a composite work piece to a low-temperature, atmospheric pressure plasma, wherein the reactive gas from the plasma is projected out of the device and onto the surface of the composite work piece, then applying an adhesive to the surface of the treated composite work piece, and joining the composite work piece together with a second work piece. The adhesive may be cured such that it forms a strong, permanent bond. The atmospheric plasma delivery device may be translated over the composite surface by hand or with a robot. The plasma device may be self-contained and portable, and can be moved to a location that is convenient for treating the composites.
摘要翻译：一种将复合材料粘合在一起的方法，其快速有效，并且可以应用于任何结构，而不管其尺寸和形状如何，并且其相关产品被公开。该方法包括首先将复合工件的至少一部分经受低温大气压等离子体，其中来自等离子体的反应气体从装置中突出并移到复合工件的表面上，然后施加粘合到经处理的复合工件的表面上，并将复合工件与第二工件接合。粘合剂可以被固化，使得其形成坚固的永久性结合。大气等离子体输送装置可以用手或机器人在复合表面上平移。等离子体装置可以是独立的和便携式的，并且可以移动到便于处理复合材料的位置。

5. 发明授权

US08267884B1 Wound treatment apparatus and method 有权
标题翻译：伤口治疗装置及方法
公开(公告)号：US08267884B1
公开(公告)日：2012-09-18
申请号：US11539784
申请日：2006-10-09
申请人： Robert F. Hicks
发明人： Robert F. Hicks
IPC分类号： A61M37/00
CPC分类号： A61B18/042 , A61B34/30 , A61B2018/00023 , A61B2018/00452 , A61B2018/00642 , A61B2018/00744 , A61B2018/00898 , A61B2562/0257 , A61L2/0011 , A61L2/14
摘要： Apparatuses and methods for treating wounds are disclosed. An apparatus for treating wounds is disclosed comprising an instrument for generating a low temperature, atmospheric pressure plasma, a means of flowing gas through the instrument, and a means of contacting the wound with the reactive gases flowing out of the instrument. A method for treating wounds using reactive gases is disclosed. The use of atmospheric pressure plasmas for treating wounds is also disclosed.
摘要翻译：公开了用于治疗伤口的装置和方法。公开了一种用于治疗伤口的装置，其包括用于产生低温大气压等离子体的装置，使气体流过仪器的装置，以及使伤口与流出仪器的反应性气体接触的装置。公开了一种使用反应性气体处理伤口的方法。还公开了使用大气压等离子体治疗伤口。

6. 发明授权

US07329608B2 Method of processing a substrate 有权
标题翻译：处理基板的方法
公开(公告)号：US07329608B2
公开(公告)日：2008-02-12
申请号：US10982120
申请日：2004-11-05
申请人： Steven E. Babayan , Robert F. Hicks
发明人： Steven E. Babayan , Robert F. Hicks
IPC分类号： H01L21/3065
CPC分类号： H01L23/26 , H01L23/08 , H01L23/10 , H01L51/524 , H01L51/5246 , H01L51/5253 , H01L51/5259 , H01L2251/566 , H01L2924/0002 , H01L2924/01079 , H01L2924/09701 , H01L2924/12044 , H01L2924/16152 , H01L2924/16195 , H01L2924/3011 , H01L2924/00
摘要： The invention is embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and a substrate or work piece is placed in the gas flow downstream of the electrodes, such that said substrate or work piece is substantially uniformly contacted across a large surface area with the reactive gases emanating therefrom. The invention is also embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and one of the grounded electrodes contains a means of mixing in other chemical precursors to combine with the plasma stream, and a substrate or work piece placed in the gas flow downstream of the electrodes, such that said substrate or work piece is contacted by the reactive gases emanating therefrom. In one embodiment, the plasma flow device removes organic materials from a substrate or work piece, and is a stripping or cleaning device. In another embodiment, the plasma flow device kills biological microorganisms on a substrate or work piece, and is a sterilization device. In another embodiment, the plasma flow device activates the surface of a substrate or work piece, and is a surface activation device. In another embodiment, the plasma flow device etches materials from a substrate or work piece, and is a plasma etcher. In another embodiment, the plasma flow device deposits thin films onto a substrate or work piece, and is a plasma-enhanced chemical vapor deposition device or reactor.
摘要翻译：本发明体现在具有壳体的等离子体流动装置或反应器中，该壳体包含具有开口的导电电极，以允许气体流过其中或其周围，其中一个或多个电极由RF源供电，并且一个或多个被接地，并且将基板或工件放置在电极下游的气流中，使得所述基板或工件在大的表面积上与从其发出的反应性气体基本均匀地接触。本发明还体现在等离子体流动装置或反应器中，该等离子体流动装置或反应器具有壳体，该壳体包含具有开口以允许气体流过其中或周围的导电电极，其中一个或多个电极由RF源供电，并且一个或多个接地，并且一个接地电极包含在其它化学前体中混合以与等离子体流结合的装置，以及放置在电极下游的气流中的衬底或工件，使得所述衬底或工件与从其发出的反应性气体。在一个实施例中，等离子体流动装置从衬底或工件移除有机材料，并且是剥离或清洁装置。在另一个实施方案中，等离子体流动装置杀死基底或工件上的生物微生物，并且是灭菌装置。在另一个实施例中，等离子体流动装置激活基板或工件的表面，并且是表面激活装置。在另一个实施例中，等离子体流动装置从衬底或工件上蚀刻材料，并且是等离子体蚀刻器。在另一个实施例中，等离子体流动装置将薄膜沉积到基底或工件上，并且是等离子体增强化学气相沉积装置或反应器。

7. 发明授权

US06262523B1 Large area atmospheric-pressure plasma jet 有权
标题翻译：大面积大气压等离子体射流
公开(公告)号：US06262523B1
公开(公告)日：2001-07-17
申请号：US09295942
申请日：1999-04-21
申请人： Gary S. Selwyn , Ivars Henins , Steve E. Babayan , Robert F. Hicks
发明人： Gary S. Selwyn , Ivars Henins , Steve E. Babayan , Robert F. Hicks
IPC分类号： H01J724
CPC分类号： H01J37/32009 , H01J37/32082 , H05H1/46 , H05H2001/466 , H05H2245/121
摘要： Large area atmospheric-pressure plasma jet. A plasma discharge that can be operated at atmospheric pressure and near room temperature using 13.56 MHz rf power is described. Unlike plasma torches, the discharge produces a gas-phase effluent no hotter than 250° C. at an applied power of about 300 W, and shows distinct non-thermal characteristics. In the simplest design, two planar, parallel electrodes are employed to generate a plasma in the volume therebetween. A “jet” of long-lived metastable and reactive species that are capable of rapidly cleaning or etching metals and other materials is generated which extends up to 8 in. beyond the open end of the electrodes. Films and coatings may also be removed by these species. Arcing is prevented in the apparatus by using gas mixtures containing He, which limits ionization, by using high flow velocities, and by properly spacing the rf-powered electrode. Because of the atmospheric pressure operation, there is a negligible density of ions surviving for a sufficiently long distance beyond the active plasma discharge to bombard a workpiece, unlike the situation for low-pressure plasma sources and conventional plasma processing methods.
摘要翻译：大面积大气压等离子体射流。描述了可以在大气压和接近室温下使用13.56MHz rf功率工作的等离子体放电。与等离子体炬不同，放电产生的气相流出物不高于250℃，施加的功率为约300W，并且显示出明显的非热特性。在最简单的设计中，使用两个平面的平行电极来产生它们之间的体积中的等离子体。产生能够快速清洗或蚀刻金属和其他材料的长寿命亚稳态和反应性物质的“射流”，其延伸超过电极开口端的8英寸。这些物质也可以除去膜和涂层。通过使用含有He的气体混合物，通过使用高流速限制电离，并通过适当地间隔rf供电的电极，在装置中防止了电弧。由于大气压力操作，与低压等离子体源和常规等离子体处理方法的情况不同，存在离子的密度可忽略不计，超过有效等离子体放电足够长的距离以轰击工件。

8. 发明授权

US06194036B1 Deposition of coatings using an atmospheric pressure plasma jet 有权
标题翻译：使用大气压等离子体射流沉积涂层
公开(公告)号：US06194036B1
公开(公告)日：2001-02-27
申请号：US09176046
申请日：1998-10-20
申请人： Steve E. Babayan , Gary S. Selwyn , Robert F. Hicks
发明人： Steve E. Babayan , Gary S. Selwyn , Robert F. Hicks
IPC分类号： C23C16513
CPC分类号： C23C16/513 , H05H1/42 , H05H2001/245 , H05H2001/4697
摘要： Deposition of coatings using an atmospheric pressure plasma jet. The use of a nonthermal source which is capable of operation at 760 torr is demonstrated. As an example of the application of the present invention, a helium/oxygen gas mixture is introduced into the annular region between two coaxial electrodes driven by a 13.56 MHz radio frequency (rf) source at between 40 and 500 W to produce a stable plasma jet. Silicon dioxide films are deposited by introducing tetraethoxysilane (TEOS) into the effluent stream. A deposition rate of 3020±250 Å/min. is achieved with an rf power of 400 W, 0.2 torr of TEOS, 11.1 torr of oxygen, 748.7 torr of helium, and a total gas flow rate of 41 L/min. The deposition rate depends on the oxygen partial pressure, the TEOS partial pressure, and the rf power to the 0.28, 0.47, and 1.41 powers, respectively. However, increasing the temperature decreases the deposition rate. The observed dielectric constants of the films decrease from 5.0±0.2 to 3.81±0.03 as the deposition temperature increases from 115 to 350° C. Infrared spectra of the deposited films at 350° C. show no carbon or hydroxyl ion contamination, indicating excellent material purity.
摘要翻译：使用大气压等离子体射流沉积涂层。证明了使用能够在760托下操作的非热源。作为本发明的应用的一个实例，氦/氧气体混合物被引入在由13.56MHz射频（RF）源驱动的在40和500W之间的两个同轴电极之间的环形区域中，以产生稳定的等离子体射流。通过将四乙氧基硅烷（TEOS）引入流出物流中沉积二氧化硅膜。沉积速率为3020±250 / min。通过功率为400W，TEOS为0.2乇，氧气为11.1乇，氦气为748.7乇，总气体流量为41L / min。沉积速率取决于氧气分压，TEOS分压，和功率分别为0.28,0.47和1.41的功率。然而，增加温度降低了沉积速率。观察到的介电常数随着沉积温度从115℃升高到350℃，从5.0±0.2降低到3.81±0.03。沉积膜在350℃下的红外光谱显示没有碳或羟基离子污染，表明优异的材料纯度。

9. 发明授权

US4780449A Catalyst for the conversion of methane 失效
标题翻译：用于甲烷转化的催化剂
公开(公告)号：US4780449A
公开(公告)日：1988-10-25
申请号：US943873
申请日：1986-12-19
申请人： Robert F. Hicks
发明人： Robert F. Hicks
IPC分类号： C07C2/84 , B01J23/02 , B01J23/10
CPC分类号： C07C2/84 , C07C2521/10 , C07C2523/02 , C07C2523/10 , Y02P20/52
摘要： A process and catalyst for the synthesis of hydrogen, ethylene, ethane, and higher hydrocarbons from methane in the presence of oxygen is disclosed. The catalyst comprises metal oxides selected from a Group IIA metal, a Group IIIA metal, a lanthanide series metal excluding Ce, or mixtures thereof and optionally a promoter metal oxide selected from a Group IA metal, a Group IIA metal, a Group IIIA metal, a lanthanide series metal, a Group IVB metal, a Group VB metal, a Group IB metal, or mixtures thereof.
摘要翻译：公开了一种在氧存在下从甲烷合成氢，乙烯，乙烷和高级烃的方法和催化剂。催化剂包括选自IIA族金属，IIIA族金属，除Ce之外的镧系金属或其混合物的金属氧化物，以及任选的选自IA族金属，IIA族金属，IIIA族金属的助催化剂金属氧化物，镧系金属，IVB族金属，VB族金属，IB族金属，或其混合物。

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