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    • 1. 发明授权
    • Large area atmospheric-pressure plasma jet
    • 大面积大气压等离子体射流
    • US06262523B1
    • 2001-07-17
    • US09295942
    • 1999-04-21
    • Gary S. SelwynIvars HeninsSteve E. BabayanRobert F. Hicks
    • Gary S. SelwynIvars HeninsSteve E. BabayanRobert F. Hicks
    • H01J724
    • H01J37/32009H01J37/32082H05H1/46H05H2001/466H05H2245/121
    • Large area atmospheric-pressure plasma jet. A plasma discharge that can be operated at atmospheric pressure and near room temperature using 13.56 MHz rf power is described. Unlike plasma torches, the discharge produces a gas-phase effluent no hotter than 250° C. at an applied power of about 300 W, and shows distinct non-thermal characteristics. In the simplest design, two planar, parallel electrodes are employed to generate a plasma in the volume therebetween. A “jet” of long-lived metastable and reactive species that are capable of rapidly cleaning or etching metals and other materials is generated which extends up to 8 in. beyond the open end of the electrodes. Films and coatings may also be removed by these species. Arcing is prevented in the apparatus by using gas mixtures containing He, which limits ionization, by using high flow velocities, and by properly spacing the rf-powered electrode. Because of the atmospheric pressure operation, there is a negligible density of ions surviving for a sufficiently long distance beyond the active plasma discharge to bombard a workpiece, unlike the situation for low-pressure plasma sources and conventional plasma processing methods.
    • 大面积大气压等离子体射流。 描述了可以在大气压和接近室温下使用13.56MHz rf功率工作的等离子体放电。 与等离子体炬不同,放电产生的气相流出物不高于250℃,施加的功率为约300W,并且显示出明显的非热特性。 在最简单的设计中,使用两个平面的平行电极来产生它们之间的体积中的等离子体。 产生能够快速清洗或蚀刻金属和其他材料的长寿命亚稳态和反应性物质的“射流”,其延伸超过电极开口端的8英寸。 这些物质也可以除去膜和涂层。 通过使用含有He的气体混合物,通过使用高流速限制电离,并通过适当地间隔rf供电的电极,在装置中防止了电弧。 由于大气压力操作,与低压等离子体源和常规等离子体处理方法的情况不同,存在离子的密度可忽略不计,超过有效等离子体放电足够长的距离以轰击工件。
    • 2. 发明授权
    • Deposition of coatings using an atmospheric pressure plasma jet
    • 使用大气压等离子体射流沉积涂层
    • US06194036B1
    • 2001-02-27
    • US09176046
    • 1998-10-20
    • Steve E. BabayanGary S. SelwynRobert F. Hicks
    • Steve E. BabayanGary S. SelwynRobert F. Hicks
    • C23C16513
    • C23C16/513H05H1/42H05H2001/245H05H2001/4697
    • Deposition of coatings using an atmospheric pressure plasma jet. The use of a nonthermal source which is capable of operation at 760 torr is demonstrated. As an example of the application of the present invention, a helium/oxygen gas mixture is introduced into the annular region between two coaxial electrodes driven by a 13.56 MHz radio frequency (rf) source at between 40 and 500 W to produce a stable plasma jet. Silicon dioxide films are deposited by introducing tetraethoxysilane (TEOS) into the effluent stream. A deposition rate of 3020±250 Å/min. is achieved with an rf power of 400 W, 0.2 torr of TEOS, 11.1 torr of oxygen, 748.7 torr of helium, and a total gas flow rate of 41 L/min. The deposition rate depends on the oxygen partial pressure, the TEOS partial pressure, and the rf power to the 0.28, 0.47, and 1.41 powers, respectively. However, increasing the temperature decreases the deposition rate. The observed dielectric constants of the films decrease from 5.0±0.2 to 3.81±0.03 as the deposition temperature increases from 115 to 350° C. Infrared spectra of the deposited films at 350° C. show no carbon or hydroxyl ion contamination, indicating excellent material purity.
    • 使用大气压等离子体射流沉积涂层。 证明了使用能够在760托下操作的非热源。 作为本发明的应用的一个实例,氦/氧气体混合物被引入在由13.56MHz射频(RF)源驱动的在40和500W之间的两个同轴电极之间的环形区域中,以产生稳定的等离子体射流 。 通过将四乙氧基硅烷(TEOS)引入流出物流中沉积二氧化硅膜。 沉积速率为3020±250 / min。 通过功率为400W,TEOS为0.2乇,氧气为11.1乇,氦气为748.7乇,总气体流量为41L / min。 沉积速率取决于氧气分压,TEOS分压,和功率分别为0.28,0.47和1.41的功率。 然而,增加温度降低了沉积速率。 观察到的介电常数随着沉积温度从115℃升高到350℃,从5.0±0.2降低到3.81±0.03。沉积膜在350℃下的红外光谱显示没有碳或羟基离子污染,表明优异的材料 纯度。