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1. 发明申请

US20060073658A1 Method for making a ferroelectric memory cell in a ferroelectric memory device, and a ferroelectric memory device 审中-公开
标题翻译：在铁电存储器件中制造铁电存储单元的方法和铁电存储器件
公开(公告)号：US20060073658A1
公开(公告)日：2006-04-06
申请号：US11294392
申请日：2005-12-06
申请人： Henrik Ljungcrantz , Niclas Edvardsson , Johan Carlsson , Goran Gustafsson
发明人： Henrik Ljungcrantz , Niclas Edvardsson , Johan Carlsson , Goran Gustafsson
IPC分类号： H01L21/8242 , H01L21/20 , H01L21/00
CPC分类号： H01L21/32051 , H01L27/11502
摘要： In a method for making ferroelectric memory cells in a ferroelectric memory device a first electrode comprising at least one metal layer and optionally at least one metal oxide layer is formed on a silicon substrate which has an optional insulating layer of silicon dioxide. A ferroelectric layer consisting of a thin film of ferroelectric polymer is formed on the top of the first electrode layer and at least a second electrode comprising at least one metal layer and at least one metal oxide layer is formed on the ferroelectric layer. The second electrode is deposited by thermal evaporation of a high-purity evaporation source from an effusion cell onto the ferroelectric layer in a vacuum chamber filled with a gas or a gas mixture. A ferroelectric memory device wherein the memory cell has been made with the above method, comprises at least a first and a second set of respectively parallel electrodes, wherein the electrodes in a set are provided orthogonally to the electrodes of a nearest following set and with memory cells formed in a ferroelectric layer provided between successive electrode sets, such that memory cells are defined in the crossings between the electrodes which contact the ferroelectric layer on each side thereof.
摘要翻译：在铁电存储器件中制造铁电存储单元的方法中，在具有任选的二氧化硅绝缘层的硅衬底上形成包括至少一个金属层和任选的至少一个金属氧化物层的第一电极。在第一电极层的顶部形成由铁电聚合物薄膜构成的铁电层，并且在铁电层上形成至少包含至少一个金属层和至少一个金属氧化物层的第二电极。通过在填充有气体或气体混合物的真空室中将高纯度蒸发源从渗出室热蒸发到铁电层上来沉积第二电极。具有上述方法制造存储单元的铁电存储器件包括至少第一组和第二组分别平行的电极，其中一组中的电极与最接近的组的电极和记忆体正交地设置形成在连续的电极组之间的铁电体层中形成的单元，使得存储单元被限定在与其每一侧接触铁电体层的电极之间的交叉中。

2. 发明申请

US20060146589A1 Method for operating a passive matrix-addressable ferroelectric or electret memory device 失效
标题翻译：用于操作无源矩阵寻址铁电或驻极体存储器件的方法
公开(公告)号：US20060146589A1
公开(公告)日：2006-07-06
申请号：US11027977
申请日：2005-01-04
申请人： Christer Karlsson , Goran Gustafsson , Mats Johansson , Per Sandstrom , Per-Erik Nordal , Hans Gudesen , Johan Carlsson
发明人： Christer Karlsson , Goran Gustafsson , Mats Johansson , Per Sandstrom , Per-Erik Nordal , Hans Gudesen , Johan Carlsson
IPC分类号： G11C11/22
CPC分类号： G11C29/50 , G11C11/22
摘要： In a method for operating a passive matrix-addressable ferroelectric or electret memory device, a voltage pulse protocol based on a 1/3 voltage selection rule is used in order to keep disturb voltages at minimum, the voltage pulse protocol comprising cycles for read and write/erase bases on time sequence of voltage pulses with defined parameters. The method comprises a refresh procedure wherein cells for refresh are selected and refresh requests processed by a memory device controller, the refresh requests are monitored and processed in regard of ongoing or scheduled memory operations, and refresh voltage pulses with defined parameters are applied to the memory cells selected for refresh, while simultaneously ensuring that non-selected memory cells are subjected to zero voltage or voltages which do not affect the polarization state of these cells.
摘要翻译：在用于操作无源矩阵寻址铁电或驻极体存储器件的方法中，使用基于1/3电压选择规则的电压脉冲协议以便将干扰电压保持在最小值，所述电压脉冲协议包括用于读取和写入的周期根据具有定义参数的电压脉冲的时间顺序进行擦除。该方法包括刷新过程，其中选择用于刷新的单元和由存储器件控制器处理的刷新请求，关于正在进行或调度的存储器操作来监视和处理刷新请求，并且将具有所定义参数的刷新电压脉冲施加到存储器选择用于刷新的单元，同时确保未选择的存储单元经受不影响这些单元的极化状态的零电压或电压。

3. 发明申请

US20050058010A1 Addressing of memory matrix 有权
标题翻译：存储矩阵的寻址
公开(公告)号：US20050058010A1
公开(公告)日：2005-03-17
申请号：US10934573
申请日：2004-09-07
申请人： Michael Thompson , Per-Erik Nordal , Hans Gudesen , Johan Carlsson , Goran Gustafsson
发明人： Michael Thompson , Per-Erik Nordal , Hans Gudesen , Johan Carlsson , Goran Gustafsson
IPC分类号： G02F1/133 , G09G3/20 , G09G3/36 , G11C7/06 , G11C7/10 , G11C8/18 , G11C11/22 , G11C8/02
CPC分类号： G11C11/22 , G09G3/20 , G09G3/3629 , G09G2300/06 , G09G2310/0251 , G09G2320/0209 , G11C7/06 , G11C7/1006 , G11C8/18
摘要： A method of driving a passive matrix display or memory array of cells comprising an electrically polarizable material exhibiting hysteresis, in particular a ferroelectric material, wherein the polarization state of individual cells can be switched by application of electric potentials or voltages to word and bit lines in the matrix or array.
摘要翻译：驱动单元的无源矩阵显示器或存储器阵列的方法，该阵列包括具有磁滞的电可极化材料，特别是铁电材料，其中可以通过将电位或电压施加到字和位线来切换各个单元的极化状态，矩阵或阵列。

4. 发明申请

US20080198644A1 Data Storage Device 有权
标题翻译：数据存储设备
公开(公告)号：US20080198644A1
公开(公告)日：2008-08-21
申请号：US11917571
申请日：2006-06-08
申请人： Per Broms , Christer Karlsson , Geirr I. Leistad , Per Hamberg , Staffan Bjorklid , Johan Carlsson , Goran Gustafsson , Hans Gude Gudesen
发明人： Per Broms , Christer Karlsson , Geirr I. Leistad , Per Hamberg , Staffan Bjorklid , Johan Carlsson , Goran Gustafsson , Hans Gude Gudesen
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G06K7/0021 , B82Y10/00 , G11B9/02 , G11B9/1454 , G11C11/22 , G11C11/5664 , G11C13/0009 , G11C13/0014 , G11C13/0016
摘要： In a non-volatile electric memory system a memory unit (4) and a read/write unit (11) are provided as physically separate units. The memory unit (10) is based on a memory material (4) that can be set to at least two distinct physical states by applying an electric field across the memory material. Electrode means and/or contact means are either provided in the memory unit or in the read/write unit and contact means are at least always provided in the read/write unit. Electrodes and contacts are provided in a geometrical arrangement, which defines geometrically one or more memory cells in the memory layer. Contact means in the read/write unit are provided connectable to driving, sensing and control means located in the read/write unit or in an external device connected with the latter. Establishing a physical contact between the memory unit and the read/write unit closes an electrical circuit over the addressed memory cell such that read, write or erase operations can be effected. The memory material of the memory unit can be a ferroelectric or electret material that can be polarized into two discernible polarization states, or it can be a material with a resistive impedance characteristic such that a memory cell of the material can be set to a specific stable resistance value by the application of an electric field.
摘要翻译：在非易失性电存储器系统中，存储器单元（4）和读/写单元（11）被提供为物理上分离的单元。存储器单元（10）基于可通过在存储器材料上施加电场而被设置为至少两种不同物理状态的存储器材料（4）。电极装置和/或接触装置被提供在存储器单元或读/写单元中，并且接触装置至少总是设置在读/写单元中。电极和触点以几何布置提供，其几何地限定存储器层中的一个或多个存储器单元。读/写单元中的接触装置可连接到位于读/写单元中的驱动，感测和控制装置或与其连接的外部设备。在存储器单元和读/写单元之间建立物理接触关闭寻址的存储单元上的电路，从而可以实现读，写或擦除操作。存储单元的存储材料可以是铁电或驻极体材料，其可以被极化成两个可识别的极化状态，或者它可以是具有电阻阻抗特性的材料，使得材料的存储单元可以被设置为特定的稳定通过施加电场的电阻值。

5. 发明授权

US06979643B2 Interlayer connections for layered electronic devices 失效
标题翻译：分层电子设备的层间连接
公开(公告)号：US06979643B2
公开(公告)日：2005-12-27
申请号：US10720680
申请日：2003-11-25
申请人： Goran Gustafsson , Peter Dyreklev , Johan Carlsson
发明人： Goran Gustafsson , Peter Dyreklev , Johan Carlsson
IPC分类号： H01L21/768 , H01L21/44 , H01L29/40
CPC分类号： H01L21/76838 , H01L21/76804 , H01L21/76816
摘要： In a method for forming interlayer connections, metal conducting paths in an overlaying layer and vias forming the deposit in one and the same operation. In an interlayer connection formed in this manner the vias are provided integral with connecting conducting paths in the overlaying layer.
摘要翻译：在形成层间连接的方法中，覆盖层中的金属传导路径和在同一操作中形成沉积物的通孔。在以这种方式形成的层间连接中，通孔与覆盖层中的连接导电路径一体地设置。

6. 发明申请

US20060091435A1 Organic electronic circuit and method for making the same 失效
标题翻译：有机电子电路及其制作方法
公开(公告)号：US20060091435A1
公开(公告)日：2006-05-04
申请号：US11185860
申请日：2005-07-21
申请人： Rickard Liljedahl , Goran Gustafsson
发明人： Rickard Liljedahl , Goran Gustafsson
IPC分类号： H01L29/94
CPC分类号： G11C11/22 , B82Y10/00
摘要： In an organic electronic circuit (C), particularly a memory circuit with an organic ferroelectric or electret material (2) the active material comprises fluorine atoms and consists of various organic materials. The active material is located between first and second electrode sets constituting respectively bottom and top electrodes (1a;1b) of the device. A cell with a capacitor-like structure is defined in the active material (2) and can be accessed for an addressing operation via the electrodes. At least one top electrode (1b) comprises a layer of gold in contact with active material. A second layer (12) on the top electrode (1b) comprises conducting material different from gold or can alternatively also be made of gold. A via connection (13) extends between the second electrode layer (12) and a bottom electrode (1a) or another electrode (1b) in the bottom electrode layer. In case the second electrode layer (12) is made of gold the via metal of the via connection can also be gold and integral with the second electrode layer (12). In a method for establishing a top via electrode connection in the device (M), a first top electrode layer of gold is deposited and a via hole etched therethrough and down to the bottom electrode layer, and via metal is deposited to form a via connection (13) and then a second top electrode layer (12) is deposited above the first electrode layer of gold and contacting the via connection.
摘要翻译：在有机电子电路（C）中，特别是具有有机铁电或驻极体材料的存储电路（2），活性材料包含氟原子并由各种有机材料组成。活性材料位于构成装置的底部和顶部电极（1a，1b）的第一和第二电极组之间。具有电容器状结构的电池被限定在活性材料（2）中，并且可以通过电极进行寻址操作。至少一个顶部电极（1b）包括与活性材料接触的金属层。顶部电极（1b）上的第二层（12）包括与金不同的导电材料，或者也可以由金制成。通孔连接（13）在底部电极层中的第二电极层（12）和底部电极（1a）或另一个电极（1b）之间延伸。在第二电极层（12）由金制成的情况下，通孔连接的通孔金属也可以是金并且与第二电极层（12）成一体。在用于在器件（M）中建立顶部通孔电极连接的方法中，沉积金的第一顶部电极层，并且蚀刻通孔并向下蚀刻到底部电极层，并且通过金属沉积以形成通孔连接（13），然后在金的第一电极层上方沉积第二顶电极层（12），并接触通孔连接。

7. 发明申请

US20050249975A1 Organic electronic device and methods for manufacturing a device of this kind 失效
标题翻译：有机电子装置及其制造方法
公开(公告)号：US20050249975A1
公开(公告)日：2005-11-10
申请号：US11088194
申请日：2005-03-24
申请人： Mats Sandberg , Per-Erik Nordal , Grzegorz Greczynski , Mats Johansson , Per Carlsen , Hans Gudesen , Goran Gustafsson , Linda Andersson
发明人： Mats Sandberg , Per-Erik Nordal , Grzegorz Greczynski , Mats Johansson , Per Carlsen , Hans Gudesen , Goran Gustafsson , Linda Andersson
IPC分类号： B32B19/00 , G11C11/22 , G11C13/02 , H01L20060101 , H01L33/00 , H01L51/10 , H01L51/30
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/0016 , G11C2213/55 , H01L51/0025 , H01L51/0026 , H01L51/0034 , H01L51/0043 , H01L51/005
摘要： An organic electronic device consists of one or more electro-active organic or polymer materials sandwiched between electrodes. Critical in such devices is the interface between the electrode and the polymer, where degradation or chemical reaction products may develop that are deleterious to the proper functioning of the device. This is solved by introducing a functional interlayer composed of one or more materials consisting of a molecular backbone bearing phosphonate or phosphate functions, either directly attached or through side chains, said functional layer being disposed between at least one of the respective electrodes and said one or more electro-active materials in the device.
摘要翻译：有机电子器件由夹在电极之间的一种或多种电活性有机或聚合物材料组成。在这种装置中的关键是电极和聚合物之间的界面，其中可能产生对装置的正常功能有害的降解或化学反应产物。这通过引入由一种或多种由含有膦酸酯或磷酸酯官能团的分子骨架组成的材料构成的功能性夹层来解决，直接连接或通过侧链，所述功能层设置在至少一个相应的电极之间，更多的电活性材料在设备中。

8. 发明授权

US07291859B2 Organic electronic circuit and method for making the same 失效
标题翻译：有机电子电路及其制作方法
公开(公告)号：US07291859B2
公开(公告)日：2007-11-06
申请号：US11185860
申请日：2005-07-21
申请人： Rickard Liljedahl , Goran Gustafsson
发明人： Rickard Liljedahl , Goran Gustafsson
IPC分类号： H01L35/24
CPC分类号： G11C11/22 , B82Y10/00
摘要： In an organic electronic circuit, particularly memory circuit with an organic ferroelectric or electret material the active material comprises fluorine atoms and consists of various organic materials. The active material is located between first and second electrode sets constituting respectively bottom and top electrodes of the device. A cell with a capacitor like structure is defined in the active material and can be accessed for an addressing operation via the electrodes. At least one top electrode comprises a layer of gold in contact with active material. A second layer on the top electrode comprises conducting material different from gold or can alternatively also be made of gold. A via connection extends between the second electrode layer and a bottom electrode or another electrode in the bottom electrode layer. In case the second electrode layer is made of gold the via metal of the via connection can also be gold and integral with the second electrode layer. In a method for establishing a top via electrode connection in the device, a first top electrode layer of gold is deposited and a via hole etched therethrough and down to the bottom electrode layer, and via metal is deposited to form a via connection and then a second top electrode layer is deposited above the first electrode layer of gold and contacting the via connection.
摘要翻译：在有机电子电路中，特别是具有有机铁电或驻极体材料的存储电路，活性材料包含氟原子并由各种有机材料组成。活性物质位于构成装置的底部和顶部电极的第一和第二电极组之间。具有电容器结构的电池被定义在活性材料中，并且可以通过电极进行寻址操作。至少一个顶部电极包括与活性材料接触的金属层。顶部电极上的第二层包括与金不同的导电材料，或者也可以由金制成。通孔连接在第二电极层和下电极层中的底电极或另一电极之间延伸。在第二电极层由金制成的情况下，通孔连接的通孔金属也可以是金并且与第二电极层成一体。在用于在器件中建立顶部通孔电极连接的方法中，沉积金的第一顶部电极层，并且蚀刻通孔并向下蚀刻到底部电极层，并且通过金属沉积以形成通孔连接，然后将第二顶部电极层沉积在金的第一电极层上方并接触通孔连接。

9. 发明申请

US20070138463A1 Transistor 失效
标题翻译：晶体管
公开(公告)号：US20070138463A1
公开(公告)日：2007-06-21
申请号：US11594995
申请日：2006-11-09
申请人： Lars Herlogsson , Goran Gustafsson , Olle-Jonny Hagel , Mats Sandberg , Magnus Berggren , Xavier Crispin , Nathaniel Robinson
发明人： Lars Herlogsson , Goran Gustafsson , Olle-Jonny Hagel , Mats Sandberg , Magnus Berggren , Xavier Crispin , Nathaniel Robinson
IPC分类号： H01L29/08 , H01L31/00
CPC分类号： H01L51/0516 , H01L51/002 , H01L51/0541
摘要： A fast organic field effect transistor (100), which operates at low voltages, is achieved by the introduction of an oligomeric or polymeric electrolyte (131) between the gate electrode (141) and the organic semiconductor layer (121), which electrolyte (131) has a dissociation constant of at least 10−8. Said organic semiconductor layer (121) is in contact with the source electrode (111) and the drain electrode (112) of the transistor. In operation a potential (152) applied to said gate electrode (141) controls the current A between said source electrode (111) and said drain electrode (112).
摘要翻译：通过在栅电极（141）和有机半导体层（121）之间引入低聚或高分子电解质（131）来实现在低电压下工作的快速有机场效应晶体管（100），该电解质）具有至少10-8的解离常数。所述有机半导体层（121）与晶体管的源电极（111）和漏电极（112）接触。在操作中，施加到所述栅极（141）的电位（152）控制所述源电极（111）和所述漏电极（112）之间的电流A.

10. 发明授权

US5930438A Method for manufacturing an optoelectrical component and an optoelectrical component manufactured according to the method 失效
标题翻译：根据该方法制造的光电元件和光电元件的制造方法
公开(公告)号：US5930438A
公开(公告)日：1999-07-27
申请号：US931304
申请日：1997-09-16
申请人： Goran Palmskog , Olle Jonny Hagel , Goran Gustafsson , Paul Eriksen
发明人： Goran Palmskog , Olle Jonny Hagel , Goran Gustafsson , Paul Eriksen
IPC分类号： G02B6/13 , G02B6/06 , G02B6/12 , G02B6/122 , G02B6/30 , G02B6/10
CPC分类号： G02B6/30 , G02B6/1221
摘要： The optoelectrical components which up to now have been used in the fibre-optical region have had waveguides of quartz and glass with hermetic encapsulating, which components have had too high manufacturing costs for profitable use. Through making polymeric single mode (SM) waveguides from plastic, for example, benzocyclobutene polymer (BCB) a simple reliable and inexpensive concept for making waveguides can be obtained. Two of the commercially available grades of BCB/DOW Chemicals have furthermore a refractive index difference which permits manufacturing of buried waveguides with SM characteristics. These two types of BCB material have shown themselves to be especially usable for manufacturing of so-called buried SM waveguides: a heat curable grade (1,4) used for under- and over-cladding for waveguides and a photo-definable derivative (3) used as the waveguide material. Encapsulating of a waveguide chip can in this way be made with plastics, at the same time as the connector interface can be formed in the end surfaces of the components.
摘要翻译：目前已经在光纤区域中使用的光电组件已经具有石英和玻璃的波导，具有气密封装，这些部件具有太高的制造成本以获得有利的使用。通过从塑料制造聚合单模（SM）波导，例如苯并环丁烯聚合物（BCB），可以获得制造波导的简单可靠且廉价的概念。两种商业级BCB / DOW Chemicals还具有折射率差异，其允许制造具有SM特性的掩埋波导。这两种类型的BCB材料已经显示出自己特别可用于制造所谓的掩埋SM波导：用于波导的低于和过度包覆的可热固化等级（1,4）和可光学定义的衍生物（3 ）用作波导材料。以这种方式，可以用塑料制造波导芯片的封装，同时可以在部件的端面中形成连接器接口。

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