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1. 发明申请

US20080198644A1 Data Storage Device 有权
标题翻译：数据存储设备
公开(公告)号：US20080198644A1
公开(公告)日：2008-08-21
申请号：US11917571
申请日：2006-06-08
申请人： Per Broms , Christer Karlsson , Geirr I. Leistad , Per Hamberg , Staffan Bjorklid , Johan Carlsson , Goran Gustafsson , Hans Gude Gudesen
发明人： Per Broms , Christer Karlsson , Geirr I. Leistad , Per Hamberg , Staffan Bjorklid , Johan Carlsson , Goran Gustafsson , Hans Gude Gudesen
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G06K7/0021 , B82Y10/00 , G11B9/02 , G11B9/1454 , G11C11/22 , G11C11/5664 , G11C13/0009 , G11C13/0014 , G11C13/0016
摘要： In a non-volatile electric memory system a memory unit (4) and a read/write unit (11) are provided as physically separate units. The memory unit (10) is based on a memory material (4) that can be set to at least two distinct physical states by applying an electric field across the memory material. Electrode means and/or contact means are either provided in the memory unit or in the read/write unit and contact means are at least always provided in the read/write unit. Electrodes and contacts are provided in a geometrical arrangement, which defines geometrically one or more memory cells in the memory layer. Contact means in the read/write unit are provided connectable to driving, sensing and control means located in the read/write unit or in an external device connected with the latter. Establishing a physical contact between the memory unit and the read/write unit closes an electrical circuit over the addressed memory cell such that read, write or erase operations can be effected. The memory material of the memory unit can be a ferroelectric or electret material that can be polarized into two discernible polarization states, or it can be a material with a resistive impedance characteristic such that a memory cell of the material can be set to a specific stable resistance value by the application of an electric field.
摘要翻译：在非易失性电存储器系统中，存储器单元（4）和读/写单元（11）被提供为物理上分离的单元。存储器单元（10）基于可通过在存储器材料上施加电场而被设置为至少两种不同物理状态的存储器材料（4）。电极装置和/或接触装置被提供在存储器单元或读/写单元中，并且接触装置至少总是设置在读/写单元中。电极和触点以几何布置提供，其几何地限定存储器层中的一个或多个存储器单元。读/写单元中的接触装置可连接到位于读/写单元中的驱动，感测和控制装置或与其连接的外部设备。在存储器单元和读/写单元之间建立物理接触关闭寻址的存储单元上的电路，从而可以实现读，写或擦除操作。存储单元的存储材料可以是铁电或驻极体材料，其可以被极化成两个可识别的极化状态，或者它可以是具有电阻阻抗特性的材料，使得材料的存储单元可以被设置为特定的稳定通过施加电场的电阻值。

2. 发明授权

US08184467B2 Card-like memory unit with separate read/write unit 有权
标题翻译：带有单独读/写单元的卡状存储单元
公开(公告)号：US08184467B2
公开(公告)日：2012-05-22
申请号：US11917571
申请日：2006-06-08
申请人： Per Bröms , Christer Karlsson , Geirr I. Leistad , Per Hamberg , Staffan Björklid , Johan Carlsson , Göran Gustafsson , Hans Gude Gudesen
发明人： Per Bröms , Christer Karlsson , Geirr I. Leistad , Per Hamberg , Staffan Björklid , Johan Carlsson , Göran Gustafsson , Hans Gude Gudesen
IPC分类号： G11C11/22
CPC分类号： G06K7/0021 , B82Y10/00 , G11B9/02 , G11B9/1454 , G11C11/22 , G11C11/5664 , G11C13/0009 , G11C13/0014 , G11C13/0016
摘要： In a non-volatile electric memory system a memory unit and a read/write unit are provided as physically separate units. The memory unit is based on a memory material that can be set to at least two distinct physical states by applying an electric field across the memory material. Electrodes and/or contacts are either provided in the memory unit or in the read/write unit and contacts are at least always provided in the read/write unit. Electrodes and contacts are provided in a geometrical arrangement, which defines geometrically one or more memory cells in the memory layer. Establishing a physical contact between the memory unit and the read/write unit closes an electrical circuit over the addressed memory cell such that read, write or erase operations can be effected. The memory material of the memory unit can be polarized into two discernible polarization states.
摘要翻译：在非易失性电存储器系统中，存储单元和读/写单元被提供为物理上分离的单元。存储器单元基于可以通过在存储器材料上施加电场而被设置为至少两种不同物理状态的存储器材料。电极和/或触点被提供在存储器单元中或读/写单元中，并且触点至少总是设置在读/写单元中。电极和触点以几何布置提供，其几何地限定存储器层中的一个或多个存储器单元。在存储器单元和读/写单元之间建立物理接触关闭寻址的存储单元上的电路，从而可以实现读，写或擦除操作。存储器单元的存储材料可以被偏振成两个可识别的偏振状态。

3. 发明授权

US06787825B1 Data storage and processing apparatus, and method for fabricating the same 有权
标题翻译：数据存储和处理装置及其制造方法
公开(公告)号：US06787825B1
公开(公告)日：2004-09-07
申请号：US09463906
申请日：2001-01-02
申请人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad , Johan Carlsson , Göran Gustafsson , Michael O Thompson
发明人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad , Johan Carlsson , Göran Gustafsson , Michael O Thompson
IPC分类号： H01L2980
CPC分类号： H01L21/02686 , G11C5/02 , G11C17/06 , H01L21/02532 , H01L21/02689 , H01L21/2026 , H01L21/768 , H01L21/76888 , H01L21/76894 , H01L21/8221 , H01L27/0688 , H01L27/1021 , H01L27/105 , H01L27/1052 , H01L27/108 , H01L27/11 , H01L27/11502 , H01L51/0001 , H01L51/0024 , H01L2924/0002 , H01L2924/00
摘要： A data storage/processing apparatus includes ROM and/or WORM and/or REWRITEABLE memory modules and/or processing modules provided as a single main layer or multiple main layers on top of a substrate. Transistors and/or diodes operate the apparatus. In one set of embodiments, at least some of the transistors and/or diodes are provided on or in the substrate. In another set of embodiments, at least some of the layers on the top of the substrate include low-temperature compatible organic materials and/or low temperature compatible processes inorganic films, and the transistors and/or diodes need not be disposed on or in the substrate. In a related fabricating method, the memory and/or processing modules are provided on the substrate by depositing the layers in successive steps under thermal conditions that avoid subjecting an already-deposited, processed underlying layers to static or dynamic temperatures exceeding given stability limits, particularly with regard to organic materials.
摘要翻译：数据存储/处理装置包括在基板顶部上作为单个主层或多个主层提供的ROM和/或WORM和/或REWRITEABLE存储器模块和/或处理模块。晶体管和/或二极管操作该装置。在一组实施例中，晶体管和/或二极管中的至少一些设置在衬底上或衬底中。在另一组实施例中，衬底顶部上的至少一些层包括低温兼容的有机材料和/或低温兼容的无机膜，并且晶体管和/或二极管不需要被置于或基质。在相关制造方法中，存储器和/或处理模块通过在热条件下的连续步骤中沉积层而提供在衬底上，避免了已经沉积的经处理的下层在超过给定稳定极限的静态或动态温度下，特别是关于有机材料。

4. 发明授权

US07764529B2 Data storage device 失效
标题翻译：数据存储设备
公开(公告)号：US07764529B2
公开(公告)日：2010-07-27
申请号：US11917579
申请日：2006-06-08
申请人： Geirr I. Leistad , Per Broms , Christer Karlsson
发明人： Geirr I. Leistad , Per Broms , Christer Karlsson
IPC分类号： G11C5/02
CPC分类号： G06K7/0021 , B82Y10/00 , G11B9/02 , G11B9/1454 , G11C11/22 , G11C11/5664 , G11C13/0009 , G11C13/0014 , G11C13/0016
摘要： In a non-volatile electric memory system a card-like memory unit (10) and a read/write unit (11) are provided as physically separate units. The memory unit (10) is based on a memory material (4) that can be set to at least two distinct physical states by applying an electric field across the memory material. The read/write unit (10) comprises contact means (9) provided in a determined geometrical pattern enabling a definition of memory cells in memory unit (10) in an initial write operation, the memory cells being located in a geometrical pattern corresponding to that of the contact means (9). Establishing a physical contact between the memory unit (10) and the read/write unit (11) closes an electrical circuit over an addressed memory cell such that read, write or erase operations can be effected. The memory material (4) of the memory unit (10) can be a ferroelectric or electret material that can be polarized into two discernible polarization states, or it can be a material with a resistive impedance characteristic such that a memory cell of the material can be set to a specific stable resistance value by the application of an electric field.
摘要翻译：在非易失性电存储器系统中，作为物理上分离的单元设置有卡状存储器单元（10）和读/写单元（11）。存储器单元（10）基于可通过在存储器材料上施加电场而被设置为至少两种不同物理状态的存储器材料（4）。读/写单元（10）包括以确定的几何图案提供的接触装置（9），使得能够在初始写入操作中对存储器单元（10）中的存储器单元进行定义，存储器单元位于与其对应的几何图案的接触装置（9）。在存储器单元（10）和读/写单元（11）之间建立物理接触通过寻址的存储单元封闭电路，从而可以实现读，写或擦除操作。存储单元（10）的存储材料（4）可以是铁电或驻极体材料，其可以被极化成两个可识别的极化状态，或者它可以是具有阻抗特性的材料，使得材料的存储单元可以通过施加电场来设定为特定的稳定电阻值。

5. 发明申请

US20080198640A1 Data Storage Device 失效
标题翻译：数据存储设备
公开(公告)号：US20080198640A1
公开(公告)日：2008-08-21
申请号：US11917579
申请日：2006-06-08
申请人： Geirr I. Leistad , Per Broms , Christer Karlsson
发明人： Geirr I. Leistad , Per Broms , Christer Karlsson
IPC分类号： G11C5/02 , G11C7/00 , G11C11/00 , G11C11/22
CPC分类号： G06K7/0021 , B82Y10/00 , G11B9/02 , G11B9/1454 , G11C11/22 , G11C11/5664 , G11C13/0009 , G11C13/0014 , G11C13/0016
摘要： In a non-volatile electric memory system a card-like memory unit (10) and a read/write unit (11) are provided as physically separate units. The memory unit (10) is based on a memory material (4) that can be set to at least two distinct physical states by applying an electric field across the memory material. The read/write unit (10) comprises contact means (9) provided in a determined geometrical pattern enabling a definition of memory cells in memory unit (10) in an initial write operation, the memory cells being located in a geometrical pattern corresponding to that of the contact means (9). Establishing a physical contact between the memory unit (10) and the read/write unit (11) closes an electrical circuit over an addressed memory cell such that read, write or erase operations can be effected. The memory material (4) of the memory unit (10) can be a ferroelectric or electret material that can be polarized into two discernible polarization states, or it can be a material with a resistive impedance characteristic such that a memory cell of the material can be set to a specific stable resistance value by the application of an electric field.
摘要翻译：在非易失性电存储器系统中，作为物理上分离的单元设置有卡状存储器单元（10）和读/写单元（11）。存储器单元（10）基于可通过在存储器材料上施加电场而被设置为至少两种不同物理状态的存储器材料（4）。读/写单元（10）包括以确定的几何图案提供的接触装置（9），使得能够在初始写入操作中对存储器单元（10）中的存储器单元进行定义，存储器单元位于与其对应的几何图案的接触装置（9）。在存储器单元（10）和读/写单元（11）之间建立物理接触通过寻址的存储单元封闭电路，从而可以实现读，写或擦除操作。存储单元（10）的存储材料（4）可以是铁电或驻极体材料，其可以被极化成两个可识别的极化状态，或者它可以是具有阻抗特性的材料，使得材料的存储单元可以通过施加电场来设定为特定的稳定电阻值。

6. 发明授权

US06765617B1 Optoelectronic camera and method for image formatting in the same 失效
标题翻译：光电相机和图像格式化方法相同
公开(公告)号：US06765617B1
公开(公告)日：2004-07-20
申请号：US09341311
申请日：1999-07-08
申请人： Reidar E. Tangen , Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
发明人： Reidar E. Tangen , Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
IPC分类号： H04N5225
CPC分类号： H04N9/045 , H01L27/14627 , H04N5/3415 , H04N2209/046
摘要： An optoelectronic camera comprises an objective system formed by a number of optical active structures (L), particularly refractive structures in the form of microlenses or lenslets provided in an array. A detector device (D) is assigned to the lens array and comprises detectors (Dn) formed by sensor elements (E) which define pixels in the optical image. Each detector (Dn) defines a sample of the optical image and optimally all samples are used to generate a digital image. The optoelectronic camera may be realized as a color image camera, particularly for recording images in an RGB system. In a method for digital electronic formatting of an image recorded with the optoelectronic camera, zoom and pan functions are implemented in the camera.
摘要翻译：光电照相机包括由许多光学有源结构（L）形成的物镜系统，特别是以阵列形式提供的微透镜或小透镜形式的折射结构。检测器装置（D）被分配给透镜阵列，并且包括由限定光学图像中的像素的传感器元件（E）形成的检测器（Dn）。每个检测器（Dn）定义光学图像的样本，并且最佳地使用所有样本来产生数字图像。光电相机可以被实现为彩色图像相机，特别是用于在RGB系统中记录图像。在用光电相机记录的图像的数字电子格式化方法中，在相机中实现变焦和平移功能。

7. 发明授权

US06380597B1 Read-only memory and read-only memory device 失效
标题翻译：只读存储器和只读存储器件
公开(公告)号：US06380597B1
公开(公告)日：2002-04-30
申请号：US09297521
申请日：1999-09-13
申请人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
发明人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
IPC分类号： G11C1706
CPC分类号： G11C13/0014 , B82Y10/00 , G11C11/5664 , G11C11/5692 , G11C13/0016 , H01L27/112
摘要： A read-only memory is made electrically addressable over a passive conductor matrix, wherein the volume between intersection of two conductors (2; 4) in the matrix defines a memory cell (5). Data are stored as impedance values in the memory cells. The memory cells (5) comprise either an isolating material (6) which provides high impedance or one or more inorganic or organic semiconductors (9), preferably with an anisotropic conducting property. The semiconductor material (9) forms a diode junction at the interface to a metallic conductor (2; 4) in the matrix. By suitable arrangement of respectively the isolating material (6) and semiconductor material (9) in the memory cells these may be given a determined impedance value which may be read electrically and corresponds to logical values in a binary or multi-valued code. One or more read-only memories (ROM) may be provided on a semiconductor substrate (1) which also comprises driver and control circuits (13), to accomplish a read-only memory device. The device may be realized either planar or also volumetrically by stacking several read-only memories (ROM) in horizontal layers (15) and connecting them with the substrate (1) via addressing buses.
摘要翻译：只读存储器在无源导体矩阵上可电寻址，其中矩阵中两个导体（2; 4）的相交之间的体积限定了存储单元（5）。数据作为阻抗值存储在存储单元中。存储单元（5）包括提供高阻抗的隔离材料（6）或一个或多个无机或有机半导体（9），优选具有各向异性导电性能。半导体材料（9）在与基体中的金属导体（2; 4）的界面处形成二极管结。通过分别将存储单元中的隔离材料（6）和半导体材料（9）适当地布置，这些可以被给予确定的阻抗值，其可以被电读取并对应于二值或多值代码中的逻辑值。可以在也包括驱动器和控制电路（13）的半导体衬底（1）上提供一个或多个只读存储器（ROM），以实现只读存储器件。该装置可以通过在水平层（15）中堆叠几个只读存储器（ROM）并且经由寻址总线将其与衬底（1）连接来实现平面或体积式地实现。

8. 发明授权

US06776806B2 METHOD FOR GENERATING ELECTRICALLY CONDUCTING AND/OR SEMICONDUCTING STRUCTURES IN TWO OR THREE DIMENSIONS, A METHOD FOR ERASING THE SAME STRUCTURES AND AN ELECTRIC FIELD GENERATOR/MODULATOR FOR USE WITH THE METHOD FOR GENERATING 失效
标题翻译：用于在两个或三个尺寸上产生电导体和/或半导体结构的方法，用于消除相同结构的方法和用于生成方法的电场发生器/调制器
公开(公告)号：US06776806B2
公开(公告)日：2004-08-17
申请号：US09978043
申请日：2001-10-17
申请人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
发明人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
IPC分类号： H01L21306
CPC分类号： H01L51/0001 , H01L21/768 , H01L21/76888 , H01L21/76894 , H01L21/8221 , H01L51/0024 , H01L2924/0002 , Y10T29/41 , H01L2924/00
摘要： A method for generating electrically conducting and/or semiconducting structures in three dimensions in a matrix that includes two or more materials in spatially separated material structures is disclosed. An electric field is applied to the separate material structure and the field is modulated spatially according to a protocol. The protocol represents a predetermined pattern of electrically conducting and/or semiconducting structures that are generated in the material structure in response to the field. The matrix composed by the material structures includes structures of this kind in three dimensions.
摘要翻译：公开了一种用于在包括空间分离的材料结构中的两种或更多种材料的基体中产生三维导电和/或半导体结构的方法。电场被施加到单独的材料结构，并且根据协议对场进行空间调制。该协议表示响应于场而在材料结构中产生的导电和/或半导体结构的预定图案。由材料结构构成的矩阵在三维中包括这种结构。

9. 发明授权

US06724511B2 Matrix-addressable optoelectronic apparatus and electrode means in the same 失效
标题翻译：矩阵寻址光电子器件和电极装置相同
公开(公告)号：US06724511B2
公开(公告)日：2004-04-20
申请号：US10292661
申请日：2002-11-13
申请人： Hans Gude Gudesen , Geirr I. Leistad , Per-Erik Nordal
发明人： Hans Gude Gudesen , Geirr I. Leistad , Per-Erik Nordal
IPC分类号： G02F100
CPC分类号： G11C11/42 , G02F1/134336 , H01L27/156 , H01L27/307 , H01L27/3281 , H01L2251/5392
摘要： In a matrix-addressable optoelectronic apparatus which includes a functional medium in the form of an optoelectronically active material provided in a global layer in sandwich between a first and second electrode with parallel strip-like electrodes wherein the electrodes of the second electrode are oriented at an angle to the electrodes of the first electrode, functional elements are formed in the active material where respective electrodes overlap and correspond to optically active pixels in a display device or pixels in an optical detector, depending upon the active material used. In each of the first and second electrode, the electrodes are provided in a dense parallel configuration and mutually insulated by a thin film with a thickness that is only a fraction of the width of the electrodes.
摘要翻译：在一种矩阵寻址光电子装置中，该光电子装置包括在具有平行条状电极的第一和第二电极之间夹层的全局层中设置为光电活性材料形式的功能介质，其中第二电极的电极定向为取决于所使用的活性材料，在活性材料中形成功能元件，其中各个电极重叠并对应于显示装置中的光学有源像素或光学检测器中的像素。在第一和第二电极中的每一个中，电极以致密的平行构造设置，并且通过薄膜相互绝缘，厚度仅为电极宽度的一部分。

10. 发明授权

US06403396B1 Method for generation of electrically conducting or semiconducting structures in three dimensions and methods for erasure of the same structures 失效
标题翻译：用于在三维中产生导电或半导体结构的方法以及用于擦除结构的方法
公开(公告)号：US06403396B1
公开(公告)日：2002-06-11
申请号：US09381995
申请日：1999-09-28
申请人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
发明人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
IPC分类号： H01L5140
CPC分类号： H01L51/0001 , H01L21/768 , H01L21/76888 , H01L21/76894 , H01L21/8221 , H01L51/0024 , H01L2924/0002 , Y10T29/41 , H01L2924/00
摘要： Electrically conducting and/or semiconducting structures are generated in three dimensions in a composite matrix including two or more materials provided in spatially separate and homogenous material structures. Materials undergo specific physical and/or chemical changes causing transition from electrically non-conducing to electrically conducting and semiconducting state. The material structures are radiated with a given intensity or frequency characteristic adapted to the specific response of the material. Spatially modulating the radiation according to a protocol representing a pattern of electrically conducing and semiconducting structures in the relevant material structures generates the two dimensional electrically conducting and semiconducting structures in the material structure. The composite matrix is provided with electrically conducting and semiconducting structures in three dimensions. Spectral ranges of the radiation include gamma, x-ray, ultraviolet, visible light, inferred, and microwave. Particle radiation used for irradiation includes elementary particles including protons, neutrons, electrons, ions, molecules, and material aggregates.
摘要翻译：导电和/或半导体结构在三维生成复合基质中，包括在空间上分离和均匀的材料结构中提供的两种或多种材料。材料经历特定的物理和/或化学变化，导致从电导通到导电和半导体状态的转变。材料结构以适合材料的特定响应的给定强度或频率特性辐射。根据表示相关材料结构中导电和半导体结构的图案的协议对辐射进行空间调制，在材料结构中产生二维导电和半导体结构。复合矩阵在三维空间中提供导电和半导体结构。辐射的光谱范围包括γ，X射线，紫外线，可见光，推测和微波。用于照射的粒子辐射包括包括质子，中子，电子，离子，分子和材料聚集体的基本粒子。

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