专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07563639B2 Phase-changeable memory device and method of manufacturing the same 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US07563639B2
公开(公告)日：2009-07-21
申请号：US11733131
申请日：2007-04-09
申请人： Hee-Ju Shin , Jong-Chan Shin , Soon-Oh Park , Hyeong-Geun An , Han-Bong Ko
发明人： Hee-Ju Shin , Jong-Chan Shin , Soon-Oh Park , Hyeong-Geun An , Han-Bong Ko
IPC分类号： H01L21/06
CPC分类号： H01L45/06 , H01L27/2463 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/1683
摘要： In a semiconductor memory device and a method of manufacturing the same, an insulating layer is formed on a substrate having a logic region on which a first pad is provided and a cell region on which a second pad and a lower electrode are subsequently provided. The insulating layer is etched to be a first insulating layer pattern having a first opening exposing the first pad. A first plug is formed in the first opening. The first insulating layer pattern where the first plug is formed is etched to be a second insulating layer pattern having a second opening exposing the lower electrode. A second plug including a phase-changeable material is formed in the second opening. A conductive wire and an upper electrode are formed on the first plug and the second plug, respectively.
摘要翻译：在半导体存储器件及其制造方法中，在具有设置有第一焊盘的逻辑区域的衬底上形成绝缘层，并且随后设置有第二焊盘和下电极的单元区域。绝缘层被蚀刻成具有第一开口的第一绝缘层图案，该第一开口露出第一焊盘。第一插头形成在第一开口中。将形成有第一插塞的第一绝缘层图案蚀刻成具有暴露下电极的第二开口的第二绝缘层图案。包括相变材料的第二插头形成在第二开口中。导线和上电极分别形成在第一插头和第二插头上。

2. 发明授权

US07638788B2 Phase change memory device and method of forming the same 有权
标题翻译：相变存储器件及其形成方法
公开(公告)号：US07638788B2
公开(公告)日：2009-12-29
申请号：US11974774
申请日：2007-10-16
申请人： Dong-Ho Ahn , Hideki Horii , Jong-Chan Shin , Jun-Soo Bae , Hyeong-Geun An
发明人： Dong-Ho Ahn , Hideki Horii , Jong-Chan Shin , Jun-Soo Bae , Hyeong-Geun An
IPC分类号： H01L29/04
CPC分类号： H01L45/143 , H01L27/2409 , H01L27/2472 , H01L45/06 , H01L45/1226 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1675 , Y10S438/90
摘要： Provided are a phase change memory device and a method of forming the same. According to the phase change memory, a first plug electrode and a second plug electrode are spaced apart from each other in a mold insulating layer. A phase change pattern is disposed on the mold insulating layer. The phase change pattern contacts a top of the first plug electrode and a first potion of a top of the second plug electrode. An interconnection is electrically connected to a second portion of the top of the second plug electrode.
摘要翻译：提供了一种相变存储器件及其形成方法。根据相变存储器，第一插头电极和第二插头电极在模具绝缘层中彼此间隔开。相变图案设置在模具绝缘层上。相变图案接触第一插头电极的顶部和第二插头电极的顶部的第一部分。互连电连接到第二插头电极的顶部的第二部分。

3. 发明授权

US07767568B2 Phase change memory device and method of fabricating the same 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US07767568B2
公开(公告)日：2010-08-03
申请号：US11905244
申请日：2007-09-28
申请人： Hyeong-Geun An , Hideki Horii , Jong-Chan Shin , Dong-Ho Ahn , Jun-Soo Bae , Jeong-Hee Park
发明人： Hyeong-Geun An , Hideki Horii , Jong-Chan Shin , Dong-Ho Ahn , Jun-Soo Bae , Jeong-Hee Park
IPC分类号： H01L21/3205
CPC分类号： H01L27/2463 , H01L27/2409 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1683
摘要： A phase change memory device and method of manufacturing the same is provided. A first electrode having a first surface is provided on a substrate. A second electrode having a second surface at a different level from the first surface is on the substrate. The second electrode may be spaced apart from the first electrode. A third electrode may be formed corresponding to the first electrode. A fourth electrode may be formed corresponding to the second electrode. A first phase change pattern may be interposed between the first surface and the third electrode. A second phase change pattern may be interposed between the second surface and the fourth electrode. Upper surfaces of the first and second phase change patterns may be on the same plane.
摘要翻译：提供了一种相变存储器件及其制造方法。具有第一表面的第一电极设置在基板上。具有与第一表面不同的第二表面的第二电极在基板上。第二电极可以与第一电极间隔开。可以对应于第一电极形成第三电极。可以对应于第二电极形成第四电极。可以在第一表面和第三电极之间插入第一相变图案。可以在第二表面和第四电极之间插入第二相变图案。第一和第二相变图案的上表面可以在同一平面上。

4. 发明申请

US20080093590A1 Phase change memory device and method of forming the same 有权
标题翻译：相变存储器件及其形成方法
公开(公告)号：US20080093590A1
公开(公告)日：2008-04-24
申请号：US11974774
申请日：2007-10-16
申请人： Dong-Ho Ahn , Hideki Horii , Jong-Chan Shin , Jun-Soo Bae , Hyeong-Geun An
发明人： Dong-Ho Ahn , Hideki Horii , Jong-Chan Shin , Jun-Soo Bae , Hyeong-Geun An
IPC分类号： H01L45/00 , H01L21/06
CPC分类号： H01L45/143 , H01L27/2409 , H01L27/2472 , H01L45/06 , H01L45/1226 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1675 , Y10S438/90
摘要： Provided are a phase change memory device and a method of forming the same. According to the phase change memory, a first plug electrode and a second plug electrode are spaced apart from each other in a mold insulating layer. A phase change pattern is disposed on the mold insulating layer. The phase change pattern contacts a top of the first plug electrode and a first potion of a top of the second plug electrode. An interconnection is electrically connected to a second portion of the top of the second plug electrode.
摘要翻译：提供了一种相变存储器件及其形成方法。根据相变存储器，第一插头电极和第二插头电极在模具绝缘层中彼此间隔开。相变图案设置在模具绝缘层上。相变图案接触第一插头电极的顶部和第二插头电极的顶部的第一部分。互连电连接到第二插头电极的顶部的第二部分。

5. 发明申请

US20120122286A1 METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120122286A1
公开(公告)日：2012-05-17
申请号：US13290285
申请日：2011-11-07
申请人： Sang-Jin Kim , Jong-Chan Shin , Yong-Kug Bae , Do-Hyoung Kim , Dong-Woon Park
发明人： Sang-Jin Kim , Jong-Chan Shin , Yong-Kug Bae , Do-Hyoung Kim , Dong-Woon Park
IPC分类号： H01L21/336 , H01L21/768
CPC分类号： H01L21/76895 , H01L21/28518 , H01L21/31144 , H01L21/76897 , H01L21/823418 , H01L21/823475 , H01L21/823481 , H01L29/66545 , H01L29/66628 , H01L29/66636 , H01L29/7848
摘要： In a method of manufacturing a semiconductor device, a first etching mask and a second etching mask are formed sequentially on a metal gate structure on a substrate and a first insulating interlayer covering a sidewall of the metal gate structure respectively. An opening is formed to expose a top surface of the substrate by removing a portion of the first insulating interlayer not overlapped with the first etching mask or the second etching mask. A metal silicide pattern is formed on the exposed top surface of the substrate. A plug on the metal silicide pattern is formed to fill a remaining portion of the opening. Further, a planarization layer may be used as the second etching mask.
摘要翻译：在制造半导体器件的方法中，依次在基板上的金属栅极结构和覆盖金属栅极结构的侧壁的第一绝缘夹层上形成第一蚀刻掩模和第二蚀刻掩模。通过除去与第一蚀刻掩模或第二蚀刻掩模不重叠的第一绝缘夹层的一部分，形成开口以暴露基板的顶表面。在衬底的暴露的顶表面上形成金属硅化物图案。形成金属硅化物图案上的塞子以填充开口的剩余部分。此外，可以使用平坦化层作为第二蚀刻掩模。

6. 发明授权

US08563383B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08563383B2
公开(公告)日：2013-10-22
申请号：US13252621
申请日：2011-10-04
申请人： Sang-Jin Kim , Jong-Chan Shin , Yong-Kug Bae , Myeong-Cheol Kim , Do-Hyoung Kim
发明人： Sang-Jin Kim , Jong-Chan Shin , Yong-Kug Bae , Myeong-Cheol Kim , Do-Hyoung Kim
IPC分类号： H01L21/336
CPC分类号： H01L21/823425 , H01L21/823437 , H01L29/66545 , H01L29/66628 , H01L29/7834
摘要： A method of manufacturing a semiconductor device includes forming a plurality of gate structures including a metal on a substrate having an isolation layer, forming first insulating interlayer patterns covering sidewalls of the gate structures, forming first capping layer patterns and a second capping layer pattern on the gate structures and the first insulating interlayer patterns, the first capping layer patterns covering upper faces of the gate structures, and the second capping layer pattern overlapping the isolation layer, partially removing the first insulating interlayer patterns using the first and the second capping layer patterns as etching masks to form first openings that expose portions of the substrate, forming metal silicide patterns on the portions of the substrate exposed in the forming of the first openings, and forming conductive structures on the metal silicide patterns.
摘要翻译：制造半导体器件的方法包括在具有隔离层的衬底上形成包括金属的多个栅极结构，形成覆盖栅极结构的侧壁的第一绝缘层间图案，形成第一覆盖层图案和第二覆盖层图案栅极结构和第一绝缘层间图案，第一覆盖层图案覆盖栅极结构的上表面，第二覆盖层图案与隔离层重叠，使用第一和第二覆盖层图案部分地去除第一绝缘层间图案，如蚀刻掩模以形成暴露基板部分的第一开口，在形成第一开口的裸露部分上形成金属硅化物图案，并在金属硅化物图案上形成导电结构。

7. 发明授权

US08691693B2 Methods of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08691693B2
公开(公告)日：2014-04-08
申请号：US13290285
申请日：2011-11-07
申请人： Sang-Jin Kim , Jong-Chan Shin , Yong-Kug Bae , Do-Hyoung Kim , Dong-Woon Park
发明人： Sang-Jin Kim , Jong-Chan Shin , Yong-Kug Bae , Do-Hyoung Kim , Dong-Woon Park
IPC分类号： H01L21/44 , H01L29/40
CPC分类号： H01L21/76895 , H01L21/28518 , H01L21/31144 , H01L21/76897 , H01L21/823418 , H01L21/823475 , H01L21/823481 , H01L29/66545 , H01L29/66628 , H01L29/66636 , H01L29/7848
摘要： In a method of manufacturing a semiconductor device, a first etching mask and a second etching mask are formed sequentially on a metal gate structure on a substrate and a first insulating interlayer covering a sidewall of the metal gate structure respectively. An opening is formed to expose a top surface of the substrate by removing a portion of the first insulating interlayer not overlapped with the first etching mask or the second etching mask. A metal silicide pattern is formed on the exposed top surface of the substrate. A plug on the metal silicide pattern is formed to fill a remaining portion of the opening. Further, a planarization layer may be used as the second etching mask.
摘要翻译：在制造半导体器件的方法中，依次在基板上的金属栅极结构和覆盖金属栅极结构的侧壁的第一绝缘夹层上形成第一蚀刻掩模和第二蚀刻掩模。通过除去与第一蚀刻掩模或第二蚀刻掩模不重叠的第一绝缘夹层的一部分，形成开口以暴露基板的顶表面。在衬底的暴露的顶表面上形成金属硅化物图案。形成金属硅化物图案上的塞子以填充开口的剩余部分。此外，可以使用平坦化层作为第二蚀刻掩模。

8. 发明授权

US08238147B2 Multi-level phase change memory device, program method thereof, and method and system including the same 有权
标题翻译：多级相变存储器件及其编程方法，以及包括其的方法和系统
公开(公告)号：US08238147B2
公开(公告)日：2012-08-07
申请号：US12283409
申请日：2008-09-11
申请人： Jun-Soo Bae , Hideki Horii , Jong-Chan Shin
发明人： Jun-Soo Bae , Hideki Horii , Jong-Chan Shin
IPC分类号： G11C11/00
CPC分类号： G11C13/0061 , G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C16/32 , G11C2013/009 , G11C2013/0092 , Y10S977/754
摘要： In a program method for a multi-level phase change memory device, multi-level data to be programmed in a selected memory cell is received, and a program signal is applied to the selected memory cell according to the received multi-level data. Herein, a rising time of the program signal is set to be longer than a falling time of the program signal.
摘要翻译：在多电平相变存储器件的程序方法中，接收在所选择的存储器单元中要编程的多电平数据，并且根据所接收的多电平数据将程序信号施加到所选存储单元。这里，程序信号的上升时间被设定为长于编程信号的下降时间。

9. 发明授权

US06316358B1 Method for fabricating an integrated circuit device 有权
标题翻译：集成电路器件的制造方法
公开(公告)号：US06316358B1
公开(公告)日：2001-11-13
申请号：US09346271
申请日：1999-07-01
申请人： Jong-Chan Shin
发明人： Jong-Chan Shin
IPC分类号： H01L2144
CPC分类号： H01L21/76838 , H01L21/32139
摘要： A method for forming a uniform conductive pattern on an integrated circuit substrate having a step by a single photography process. An exposure mask has a different pattern in accordance with the topology of the integrated circuit substrate. The exposure mask has a increased inter-pattern space at a lower portion of the step and has a reduced inter-pattern space at a upper portion of the step. During the exposure process, a sufficient amount of light is applied to a photoresist layer at the lower portion of the step and an optical amount of light is applied to the photoresist layer at the upper portion of the step. As a result, scum phenomenon at the lower portion of the step can be prevented. Further, overetching of the conductive pattern at the upper portion of the step can be prevented.
摘要翻译：在具有通过单次摄影处理的步骤的集成电路基板上形成均匀导电图案的方法。曝光掩模根据集成电路基板的拓扑结构具有不同的图案。曝光掩模在台阶的下部具有增加的图案间空间，并且在台阶的上部具有减小的图案间空间。在曝光过程中，在步骤的下部向光致抗蚀剂层施加足够量的光，并且在步骤的上部将光量施加到光致抗蚀剂层。结果，可以防止在台阶下部的浮渣现象。此外，可以防止在台阶的上部处的导电图案的过蚀刻。

10. 发明申请

US20120122284A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120122284A1
公开(公告)日：2012-05-17
申请号：US13252621
申请日：2011-10-04
申请人： Sang-Jin KIM , Jong-Chan Shin , Yong-Kug Bae , Myeong-Cheol Kim , Do-Hyoung Kim
发明人： Sang-Jin KIM , Jong-Chan Shin , Yong-Kug Bae , Myeong-Cheol Kim , Do-Hyoung Kim
IPC分类号： H01L21/336
CPC分类号： H01L21/823425 , H01L21/823437 , H01L29/66545 , H01L29/66628 , H01L29/7834
摘要： A method of manufacturing a semiconductor device includes forming a plurality of gate structures including a metal on a substrate having an isolation layer, forming first insulating interlayer patterns covering sidewalls of the gate structures, forming first capping layer patterns and a second capping layer pattern on the gate structures and the first insulating interlayer patterns, the first capping layer patterns covering upper faces of the gate structures, and the second capping layer pattern overlapping the isolation layer, partially removing the first insulating interlayer patterns using the first and the second capping layer patterns as etching masks to form first openings that expose portions of the substrate, forming metal silicide patterns on the portions of the substrate exposed in the forming of the first openings, and forming conductive structures on the metal silicide patterns.
摘要翻译：制造半导体器件的方法包括在具有隔离层的衬底上形成包括金属的多个栅极结构，形成覆盖栅极结构的侧壁的第一绝缘层间图案，形成第一覆盖层图案和第二覆盖层图案栅极结构和第一绝缘层间图案，第一覆盖层图案覆盖栅极结构的上表面，第二覆盖层图案与隔离层重叠，使用第一和第二覆盖层图案部分地去除第一绝缘层间图案，如蚀刻掩模以形成暴露基板部分的第一开口，在形成第一开口的裸露部分上形成金属硅化物图案，并在金属硅化物图案上形成导电结构。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式